Untitled
Abstract: No abstract text available
Text: SKKT 42, SKKT 42B, SKKH 42 SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features
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thyristor
Abstract: No abstract text available
Text: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features
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semikron skkt 41
Abstract: No abstract text available
Text: SKKT 41, SKKH 41 THYRISTOR BRIDGE,SCR,BRIDGE SEMIPACK 1 Thyristor / Diode Modules SKKT 41 /0.1 /001 /%01 2+01. 3 4# * , / #66 466 =66 7"66 7#66 7466 / 566 !66 866 7$66 7566 7!66 .;+ 57<6! .;+ 57<68 .;+ 57<7$ .;+ 57<75
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semikron skkt 42
Abstract: semipack skkt skkh SKKT 42 SKKT
Text: SKKT 42, SKKT 42B, SKKH 42 SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features
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semikron thyristor
Abstract: No abstract text available
Text: SKKT 42, SKKT 42B, SKKH 42 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68
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Untitled
Abstract: No abstract text available
Text: SKKT 42, SKKT 42B, SKKH 42 THYRISTOR SEMIPACK 1 Thyristor / Diode Modules /0.1 /001 /%01 / ;66 7"66 7#66 7466 / 866 7$66 7566 7!66 .<<+ 5$=68 .<<+ 5$=7$ .<<+ 5$=75 .<<+ 5$=7! 7;66 7866 .<<+ 5$=78 SKKT 42B SKKH 42 Features
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uln2803 to drive 7 segment display
Abstract: working of 5 pen pc technology 4 digit 7 segment LED display AM26L532 AM26L53 ULN2803 MC14499 4-DIGIT 7-SEGMENT LED DISPLAY MC75107 MC14547B
Text: Microprocessor Bus Interface Motorola offers a spectrum of line drivers and receivers which provide Interlaces to many Industry standard specifications. Many of the devices add key operational features, such as hysteresis, short circuit protection, clamp diode protection, or special control functions,
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MC8T97/
MC6887
MC8T98/
MC6888
Ly620
P/648
48-Segment
44-Segment
33-Segment,
uln2803 to drive 7 segment display
working of 5 pen pc technology
4 digit 7 segment LED display
AM26L532
AM26L53
ULN2803
MC14499
4-DIGIT 7-SEGMENT LED DISPLAY
MC75107
MC14547B
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LT025MD
Abstract: sharp laser diode lt025md ecg 778 ST3040 LT025M sharp laser diode 780 nm
Text: Laser Diodes LT025MD LT025MD • High Power Laser Diode 780nm-40nnW Features ■ Outline Dimensions (U nit : m m ) (1) H igh po w er (M axim um optical po w er o u tp u t: 40mW) (2) W a v e le n g th : 780nm (3) T ra n sv e rse m o d e ■ Applications (1) O ptical disc eq u ip m en t
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LT025MD
780nm
780nm-40nnW)
LT025PD/LT025MD
LT025MD
sharp laser diode lt025md
ecg 778
ST3040
LT025M
sharp laser diode 780 nm
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LT024MD
Abstract: lt024* sharp LT024PD
Text: Laser Diodes LT024MD LT024MD • High Power Laser Diode 780nm-30mW Features ■ (1 ) H ig h p o w e r (M a x im u m o p tica l p o w e r o u t p u t : 3 0 m W ) (2 ) W a v e le n g th : 7 8 0 n m (3 ) T ra n sv e rse m od e ■ Applications (1 ) O p tica l d is c e q u ip m e n t
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LT024MD
780nm-30mW)
LT024PD/LT024MD
LT024MD
lt024* sharp
LT024PD
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MC34142
Abstract: UCN5816 7170 MOSFET Interface Circuit - Relay and Lamp - Driver 8 output decoder relay driver
Text: MOTOROLA MC34142 SEMICONDUCTOR! TECHNICAL DATA Advance Information High Performance Decoder/ Sink Driver The MC34142 is a high performance 4 to 16 multiplexed driver. This integrated circuit features a 4 to 16 decoder, 16 open drain N-channel MOS output devices with clamp diodes. The outputs are controlled by 4 address
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MC34142
MC34142
UCN5816
7170 MOSFET
Interface Circuit - Relay and Lamp - Driver
8 output decoder relay driver
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42N15
Abstract: 079A 42N20
Text: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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D00D3b4
IXTH42N20,
IXTM42N20,
IXTH42N15
IXTM42N15
IXTH42N20
IXTM42N20
O-204
O-247
50-200V,
42N15
079A
42N20
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21N60
Abstract: a 1712 mosfet s300h 21N55 247 AA
Text: I X Y S C0RP IDE ° 1 MbflbSatj 00D0342 □ IX Y S I IXTH21N60, 55 IXTM21N60, 55 Parameter Sym. IXTH21N55 IXTM21N55 IXTH21N60 IXTM21N60 Unit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (Rqs = 1.0Mfl) (1) Vdgr 550 600 Vdc Gate-Source Voltage Continuous
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00D0342
IXTH21N60,
IXTM21N60,
IXTH21N55
IXTM21N55
IXTH21N60
IXTM21N60
O-204
O-247
21N60
a 1712 mosfet
s300h
21N55
247 AA
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TL 1074 CT
Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Text: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r
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IXTH20N55
IXTH20N60
IXTM20N55
IXTM20N60
00D0344
IXTH20N60,
IXTM20N60,
50-600V,
O-247
TL 1074 CT
megamos 46 08 09 6
a 1712 mosfet
25N50
f g megamos
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IXTH24N45
Abstract: No abstract text available
Text: I X Y S IDE CORP 0D003S5 » I □ IX Y S IXTH24N50, 45 IXTM24N50, 45 Sym. IXTH24N45 IXTM24N45 IXTH24N50 IXTM24N50 Unit Drain-Source Voltage 1 Vd s s 450 500 Vdc Drain-Gate Voltage (Rq s = 1.0MÎÎ) (1) Vdg r 450 500 Vdc Gate-Source Voltage Continuous Gate-Source Voltage Transient
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0D003S5
IXTH24N45
IXTM24N45
IXTH24N50
IXTM24N50
O-204
O-247
IXTH24N50,
IXTM24N50,
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35N25
Abstract: ixtm35n30 35N30 800v mosfet megamos 46 08 09 6 IXTH35N25
Text: I X Y S CORP ID E D I 4t.fl b25L. ÜDDOBbO QDOGBtiO b 4t.flt.S5t b | DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTH35N30
IXTM35N25
IXTM35N30
35N25
35N30
800v mosfet
megamos 46 08 09 6
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19P20
Abstract: IXTH19P20 Mosfet K 135 To3 ixtm19p20
Text: IDE D I X Y s CORP □ I Mbôt,E5b IX Y S OODOSba 7 | P-CHANNEL MOSFETS IXTH19P20, 15 IXTM19P20, 15 MAXIMUM RATINGS Parameter Sym. IXTH19P20 IXTM19P20 IXTH19P15 IXTM19P15 Drain-Source Voltage 1 Vdss 200 150 Vdc Drawv-Gate Voltage (Rqs = 1-OMft) (1) Vdgr
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IXTH19P20,
19P20,
IXTH19P20
IXTH19P15
IXTM19P20
IXTM19P15
50-200V,
O-247
O-204
-65to
19P20
Mosfet K 135 To3
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ixtm11p20
Abstract: IXTP11P20 11P20 ixtp11p15 mosfet 11P20
Text: IDE D I m^öbSSti 0 0 0 0 5 7 1 7 | I X Y S CORP _ r - 3 7 - A S □ IX Y S P-CHANNEL MOSFETS MAXIMUM RATINGS IXTP11P15 IXTM11P15 Parameter Sym. IXTP11P20 1XTM11P20 Drain-Source Voltage 1 VDss 200 150 VDGR 200 150 Drain-Gate Voltage (R q s = 1-OMfl) (1)
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37-AS
IXTP11P20,
IXTM11P20,
IXTP11P20
IXTP11P15
1XTM11P20
IXTM11P15
50-200V,
O-220
O-204
ixtm11p20
11P20
ixtp11p15
mosfet 11P20
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IXTH26N50
Abstract: IXTH26N45 ixtm26n50 TL 1074 CT
Text: I X Y S IDE CORP 1 ° Mbflb52b 000D350 3 I -' □ IX Y S MegaNIOS FETs IXTH26N50, 45 IXTM26N50, 45 MAXIMUM RATINGS Parameter Sym. IXTH26N45 IXTM26N45 IXTH26N50 IXTM26N50 Unit Drain-Source Voltage 1 Vdss 450 500 Vdc V dgr 450
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IXTH26N45
IXTH26N50
IXTM26N45
IXTM26N50
Mbflb22b
IXTH26N50,
00ESN0TINCLUOE
TL 1074 CT
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a 1712 mosfet
Abstract: ixth67n10 ID 48 Megamos K 1120 megamos 46 08 09 6
Text: IDE D I X Y S CORP DIXYS MegaMOS FETs IXTH67N10, 08 IXTM67N10, 08 MAXIMUM RATINGS Sym. IXTH67N08 IXTM67N08 IXTH67N10 IXTM67N10 Unit Drain-Source Voltage 1 V d SS 80 100 Vdc Drain-Gate Voltage (RGs = 1.0MQ) (1) VDGR 80 100 Vdc Parameter Gate-Source Voltage Continuous
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IXTH67N08
IXTH67N10
IXTM67N08
IXTM67N10
IXTH67N10,
a 1712 mosfet
ID 48 Megamos
K 1120
megamos 46 08 09 6
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BSC 031 N 06 NS 3
Abstract: 21N50 ixth21n50 IXTM21N50
Text: I X □ I X Y S CORP IDE D | 4t.flL,22b 000Q3S4 T 7 - 3 Y S ? | - /S ' MegaMOS FETs IXTH21N50, 45 IXTM21N50, 45 R A T IN G S Parameter Drain-Source Voltage 1 1-OMfl) (1) Gate-Source Voltage Continuous IXTH21N50 IXTM21N50 Unit Voss 450 500 Vdc Vdgr 450
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IXTH21N45
IXTH21N50
IXTM21N45
IXTM21N50
IXTH21N50,
BSC 031 N 06 NS 3
21N50
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ID 48 Megamos
Abstract: 35N25 IXTM35N25 ixtm35n30
Text: I X Y S CORP IDE D I 4t . fl b25 L. ÜDDOBbO QDOGBtiO b | 4t.flt.S5t DIXYS MegaMOS'“ FETs IXTH35N30, 25 IXTM35N30, 25 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vdss Vdgr Drain-Gate Voltage (Rq s = 1-OMft) (1) Gate-Source Voltage Continuous
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IXTH35N25
IXTM35N25
IXTH35N30
IXTM35N30
O-204
O-247
IXTH350
ID 48 Megamos
35N25
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AX 1668 F 24 pin
Abstract: AX 1668 F IXTH17P25 ixtm17p25
Text: I Î O E D 1 4bflhS2b GOODatiO 5 | X Y S CORP P-CHANNEL MOSFETS □ IX Y S IXTH17P25 IXTM17P25 ' MAXIMUM RATINGS Parameter Sym. IXTH17P25 IXTM17P25 * Unit Drain-Source Voltage 1 VDss 250 Vdc Drain-Gate Voltage (Rqs = 1.0MÎ1) (1) Vdgr 250 Vdc Vqs ± 20 Vcjc
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IXTH17P25
IXTM17P25
IXTM17P25
O-247
O-204
AX 1668 F 24 pin
AX 1668 F
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75n08
Abstract: megamos 46 08 09 6 TL 1074 CT Mosfet K 135 To3 p 75n08 k 1120 P-Channel MOSFET 800v f g megamos
Text: I X Y S IDE CORP D I 4böbS?b D OOG a b b T □IXYS I 't f - l Ç MegaMOS FETs IXTH75N10, 08 IXTM75N10, 08 MAXIMUM RATINGS Sym. IXTH75N08 IXTM75N08 IXTH75N10 IXTM75N10 Unit Drain-Source Voltage 1 Vd s s 80 100 Vdc Drain-Gate Voltage (Rq s = 1-OMfl) (1)
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IXTH75N08
IXTH75N10
IXTM75N08
IXTM75N10
IXTH75N10,
IXTM75N10,
0-100V,
O-247
75n08
megamos 46 08 09 6
TL 1074 CT
Mosfet K 135 To3
p 75n08
k 1120
P-Channel MOSFET 800v
f g megamos
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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