TB370
Abstract: AN7254 AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA
Text: HUF76121SK8 Data Sheet December 2001 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
TB370
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
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65e9 transistor
Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12
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1-888-INTERSIL
MS-012AA
MO-153AA
RF1K49090
RF1K49093
RF1K49092
ITF87056DQT
ITF87072DK8T
ITF87008DQT
RF1K49223
65e9 transistor
transistor 75307D
Transistor 65e8
SD MOSFET DRIVE DATASHEET 4468 8 PIN
G40N60
RHR15120 equivalent
10n120bnd
76107d
transistor 76121D
emerson three phase dc motor driver service note
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet January 2003 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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HUF76121SK8
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models - SPICE and SABER Thermal Impedance Models
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HUF76121SK8
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AN7254
Abstract: AN9321 AN9322 HUF76121SK8 HUF76121SK8T MS-012AA TB370
Text: HUF76121SK8 Data Sheet April 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Features • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the
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Original
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PDF
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HUF76121SK8
AN7254
AN9321
AN9322
HUF76121SK8
HUF76121SK8T
MS-012AA
TB370
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 Semiconductor April 1999 Data Sheet File Number Features 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level G a te Drive This N -C h a n n e l pow er M O S F E T is • 8A , 3 0 V m anufactured using the innovative
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HUF76121SK8
MS-012AA
330mm
EIA-481
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Untitled
Abstract: No abstract text available
Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER
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HUF76121SK8
100ms.
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Untitled
Abstract: No abstract text available
Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in
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HUF76121SK8
TA76121
MS-012AA
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