75N60 Search Results

75N60 Price and Stock

Filter by Manufacturer


Micro Commercial Components MCTK075N60FH-TP N-CHANNEL MOSFET,TOLL-8L-KS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	MCTK075N60FH-TP	Cut Tape	4,000		1	1 $6.36 10 $4.198 100 $2.9989 1000 $2.475 10000 $2.475	Buy Now
	MCTK075N60FH-TP	Reel	4,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.475	Buy Now
	MCTK075N60FH-TP	Digi-Reel	4,000		1	1 $6.36 10 $4.198 100 $2.9989 1000 $2.475 10000 $2.475	Buy Now
Vishay Siliconix SIHK075N60E-T1-GE3 E SERIES POWER MOSFET POWERPAK 1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60E-T1-GE3	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $3.29383	Buy Now
	SIHK075N60E-T1-GE3	Cut Tape	25		1	1 $7.84 10 $5.321 100 $5.321 1000 $5.321 10000 $5.321	Buy Now
Vishay Siliconix SIHK075N60EF-T1GE3 E SERIES POWER MOSFET WITH FAST
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SIHK075N60EF-T1GE3	Digi-Reel	1,926		1	1 $8.73 10 $5.96 100 $8.73 1000 $3.845 10000 $3.845	Buy Now
	SIHK075N60EF-T1GE3	Cut Tape	1,926		1	1 $8.73 10 $5.96 100 $8.73 1000 $3.845 10000 $3.845	Buy Now
Infineon Technologies AG IKW75N60TFKSA1 IGBT TRENCH FS 600V 80A TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IKW75N60TFKSA1	Tube	928		1	1 $9.19 10 $9.19 100 $5.4 1000 $4.11912 10000 $4.11912	Buy Now
Mouser Electronics	IKW75N60TFKSA1		468			1 $8.51 10 $8.47 100 $4.52 1000 $4.11 10000 $4.11	Buy Now
Newark	IKW75N60TFKSA1	Bulk			1	1 $8 10 $7.39 100 $4.41 1000 $4.27 10000 $4.27	Buy Now
Rochester Electronics	IKW75N60TFKSA1		6,590		1	1 $4.12 10 $4.12 100 $3.87 1000 $3.5 10000 $3.5	Buy Now
TME	IKW75N60TFKSA1		18		1	1 $7.83 10 $6.21 100 $5.8 1000 $5.8 10000 $5.8	Buy Now

Chip One Stop	IKW75N60TFKSA1	Tube	499			1 $7.93 10 $7 100 $4.3 1000 $4.12 10000 $4.12	Buy Now
	IKW75N60TFKSA1	Tube	14			1 $7.45 10 $6.62 100 $6.62 1000 $6.62 10000 $6.62	Buy Now
EBV Elektronik	IKW75N60TFKSA1			20 Weeks	240	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IKW75N60TFKSA1		58,330			1 - 10 - 100 $3.203 1000 $3.203 10000 $3.203	Buy Now
IXYS Corporation IXKN75N60C MOSFET N-CH 600V 75A SOT-227B
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKN75N60C	Tube	703		1	1 $68.18 10 $52.498 100 $68.18 1000 $68.18 10000 $68.18	Buy Now
Mouser Electronics	IXKN75N60C		140			1 $64.84 10 $62.1 100 $57.8 1000 $57.8 10000 $57.8	Buy Now
TME	IXKN75N60C		10		1	1 $68.73 10 $58.38 100 $58.38 1000 $58.38 10000 $58.38	Buy Now

Find more 75N60 price and stock on Findchips.com

75N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SOT-227 heatsink Abstract: 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions Text: IXKN 75N60C CoolMOS Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A Ω 36 mΩ D G Preliminary data S S miniBLOC, SOT-227 B E72873 MOSFET Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90	Original	75N60C OT-227 E72873 SOT-227 heatsink 75n60 SOT-227 Package 335AB E72873 "SOT-227 B" dimensions	PDF
75N60C Abstract: No abstract text available Text: IXKN 75N60C COOLMOS * Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on 600 V 75 A 36 mΩ Ω D G S S miniBLOC, SOT-227 B MOSFET S Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS ID25 ID90 TC = 25°C TC = 90°C	Original	75N60C OT-227 75N60C	PDF
Untitled Abstract: No abstract text available Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET D miniBLOC, SOT-227 B S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	75N60C OT-227 20100609c	PDF
75n60 Abstract: 1/igbt 75n60 Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60 VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Symbol Conditions VDSS TJ = 25°C to 150°C Maximum Ratings VGS 600 V ±20 V miniBLOC, SOT-227 B	Original	75N60 OT-227 E72873 75n60 1/igbt 75n60	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 Symbol Test Conditions VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	75N60BD1	PDF
Untitled Abstract: No abstract text available Text: ADVANCE TECHNICAL DATA IXGL 75N60BU1 VCES IC25 VCE sat tfi HiPerFASTTM IGBT with Diode ISOPLUS-264TM (Electrically Isolated) Mounting Tab Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V	Original	ISOPLUS-264TM 75N60BU1 728B1	PDF
20n60c Abstract: 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c Text: Product Change Notice PCN No.: 05-03 Customer: All IXYS product type: CoolMOS products in 600V: IXKC 20N60C, IXKC 40N60C IXKR 40N60C IXKF 40N60SCD1 IXKN 40N60C, IXKN 75N60C Description of change: CoolMOS die type C2 will be replaced by C3 Reason for change:	Original	20N60C, 40N60C 40N60SCD1 40N60C, 75N60C 14F12 20n60c 40n60c 40n60 40N60SCD1 75n60 CoolMOS IXYS DATE CODE Ixkn D-68623 IXKC 20n60c	PDF
75n60 Abstract: 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c Text: CoolMOS Power MOSFET Contents VDSS max V ID25 TC = 25 °C A RDS on 600 40 70 40 70 75 35 ISOPLUS247TM miniBLOC Page mΩ Ω IXKN 40N60C C5-2 IXKR 40N60 IXKN 75N60 C5-4 C5-6 CoolMOS is a trademark ofInfineon Technologies AG. 2000 IXYS All rights reserved	Original	ISOPLUS247TM 40N60C 40N60 75N60 OT-227 E72873 75n60 40n60 40n60 transistor IXKR 40N60C E72873 ISOPLUS247 lID25 Ixkn ixkr 40n60c	PDF
"SOT-227 B" dimensions Abstract: 75N60 sot-227 Text: Advanced Technical Information CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S	Original	75N60C OT-227 E72873 "SOT-227 B" dimensions 75N60 sot-227	PDF
75n60 Abstract: M4x8 UPS SIEMENS C160 ID100 Text: IXKN 75N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 75 A RDS on) max = 36 mΩΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	75N60C OT-227 20100609c 75n60 M4x8 UPS SIEMENS C160 ID100	PDF
IXKN75N60C Abstract: 75n60 E72873 Text: CoolMOS Power MOSFET IXKN 75N60C VDSS ID25 RDS on 600 V 75 A Ω 35 mΩ N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Preliminary miniBLOC, SOT-227 B E72873 MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings S VGS ID25 ID90 dv/dt	Original	75N60C OT-227 E72873 IXKN75N60C IXKN75N60C 75n60 E72873	PDF
75n60 Abstract: No abstract text available Text: ADVANCE TECHNICAL INFORMATION HiPerFASTTM IGBT with Diode Symbol Test Conditions IXGB 75N60BD1 VCES IC25 VCE sat tfi Maximum Ratings PLUS 264 VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient	Original	75N60BD1 75n60	PDF
75N60C Abstract: 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink Text: IXKN 75N60C CoolMOS 1 Power MOSFET N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET VDSS ID25 RDS on) 600 V 75 A 36 mΩ Ω miniBLOC, SOT-227 B D S G G S S S D G = Gate D = Drain S = Source Either source terminal at miniBLOC can be used as main or kelvin source	Original	75N60C OT-227 20080523a 75N60C 75n60 IXKN75N60C UPS SIEMENS C160 SOT-227 heatsink	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original		PDF

75n60 Abstract: No abstract text available Text: 75N60FL2WG IGBT This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.	Original	NGTB75N60FL2WG NGTB75N60FL2W/D 75n60	PDF
TC1724 Abstract: tle 8760 GDI injector driver TDA 7368 tda 7718 TC1793 50010-1TAA1 dc-dc converter 50kW 100kW tc1782 TC1784 Text: Driving the Future of Automotive Electronics Automotive System Solutions [ www.infineon.com/automotive ] 2 Contents Challenges and Trends 04 Safety-Aware System Solutions 06 Body System Solutions 18 Powertrain System Solutions 32 H EV System Solutions	Original		PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF
PEF 24628 Abstract: PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819 Text: 2006/2007 Published by Infineon Technologies AG Ordering No. B192-H6780-G10-X-7600 Printed in Germany PS 080648. nb Infineon Product Catalog for Distribution 2006/2007 Product Catalog for Distribution www.infineon.com/distribution Edition July 2006 Published by	Original	B192-H6780-G10-X-7600 SP000012954 SP000013610 SP000017969 SP000014627 SP000018085 SP000018086 PEF 24628 PSB 21493 siemens PMB 6610 47n60c3 psb 21553 Pmb7725 PEF 22628 PMB6610 psb 50505 PMB 6819	PDF
BCM 4336 Abstract: 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265 Text: 01.07.2005 11:10 Uhr Seite 2 Shor t Form Catalog for Distribution 2005/06 w w w. i n f i n e o n . c o m / d i s t r i b u t i o n Published by Infineon Technologies AG Ordering No. B192-H6780-G9-X-7600 Printed in Germany LM 060550. Shor t Form Catalog Distribution 2005/06	Original	B192-H6780-G9-X-7600 D-81669 VDSL5100i-E VDSL6100i-E BCM 4336 2A0565 C2335 2A280Z C1740 bipolar transistor transistor A1267 a1273 transistor c2335 r 2B0565 2b265	PDF
100N055 Abstract: 20n60c 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D Text: Power MOSFETs N-Channel Depletion-Mode Type Package style DSS max. Tc = 25-C A Vos = 0V n pF 500 0.20 1000 0.10 30 110 1 20 1 20 ► New ► IXTP 02N50D ► IXTP 01N100D pF Outline drawings on page 91-100 w Fig. 3 TO-220AB Weight = 4 g 25 25 G = G a te. D = Drain	OCR Scan	02N50D 01N100D O-220AB O-247 20N60C 40N60C 75N60C 45N80C 100N055 200N055 60n10 45n80 160N075 100n05 75N60 02N5 01N100D	PDF

Privacy Settings

75N60 Search Results

75N60 Price and Stock

Micro Commercial Components MCTK075N60FH-TP

Vishay Siliconix SIHK075N60E-T1-GE3

Vishay Siliconix SIHK075N60EF-T1GE3

Infineon Technologies AG IKW75N60TFKSA1

IXYS Corporation IXKN75N60C

75N60 Datasheets Context Search

SOT-227 heatsink

75N60C

Untitled

75n60

Untitled

Untitled

20n60c

75n60

"SOT-227 B" dimensions

75n60

IXKN75N60C

75n60

75N60C

igbt welding machine scheme

75n60

TC1724

7N60B equivalent

PEF 24628

BCM 4336

100N055