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    74S301 Price and Stock

    Vishay Dale RWR74S3010FSB12

    RES 301 OHM 5W 1% WW AXIAL
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    Vishay Dale RWR74S3011FSS73

    RES 3.01K OHM 5W 1% WW AXIAL
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    DigiKey RWR74S3011FSS73 Reel 500
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    Vishay Dale RWR74S3010FSBSL

    RES 301 OHM 5W 1% WW AXIAL
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    Vishay Dale RWR74S3010FRS73

    RES 301 OHM 5W 1% WW AXIAL
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    DigiKey RWR74S3010FRS73 Reel 500
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    Vishay Dale RWR74S3011FSBSL

    RES 3.01K OHM 5W 1% WW AXIAL
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    DigiKey RWR74S3011FSBSL Bulk 100
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    Find more 74S301 price and stock on Findchips.com

    74S301 Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    74S301 Signetics Bipolar Memory IC Data Book 1982 Scan PDF
    74S301 Signetics Integrated Circuits Catalogue 1978/79 Scan PDF
    74S301A Signetics Integrated Circuits Catalogue 1978/79 Scan PDF

    74S301 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    S201

    Abstract: S301 D2007 SN74S201 SN74S301 7b26 A5GND 7b26b S30-1
    Text: S N 7 4S 2 01 , S N 74S301 25 6 BIT HIGH PERFORMANCE RANDOM ACCESS MEMORIES D 2 0 0 7 , SEPTEM BER 1 9 7 7 — FEBRUARY 1 9 8 4 S T A T IC R A N D O M -A C C ES S M EM O RIES Static Fully Decoded R A M 's Organized as 2 5 6 W ords o f One Bit Each • TO P V IE W I


    OCR Scan     		SN74S201, SN74S301 D2007, SN74S201. SN74S301 256-bit S201 S301 D2007 SN74S201 7b26 A5GND 7b26b S30-1 PDF

    74S301

    Abstract: N74S301F N74S301 N74S301N N74S301R S54S301 S54S301F S54S301G
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 54/74S301 O.C. 256-BIT TTL RAM (2 5 6 x 1 ) DESCRIPTION The 54/74S301 Is a R e a d /W rite m em ory array w h ich fe a tu re s an open c o lle c to r o u t­ p ut fo r o p tim iz a tio n o f w ord e x p a n s io n in bused o rg a n iz a tio n s . M em ory e x p a n s io n


    OCR Scan     		256-BIT 256x1) 54/74S301 54/74S301 54/74S30 74S301 N74S301F N74S301 N74S301N N74S301R S54S301 S54S301F S54S301G PDF

    74S200

    Abstract: 74S301 N74S200N N74S201N N74S301
    Text: S ig n e tic s Memories - Bipolar Ram C O N N E C T IO N D IA G R A M N74S200/201, 74S301 - 256 Bit TTL Ram G E N E R A L D E SC R IPTIO N The 54/74S 200/201 and 54/74S301 are re a d /w rite m em ory arrays w h ich featu re e ith e r open c o lle c to r o r tri-sta te o u t­


    OCR Scan     		N74S200/201, N74S301 54/74S200/201 54/74S301 -250mA S54S200/201/301 -100mA N74S200/201/301 74S200 74S301 N74S200N N74S201N PDF

    74S301

    Abstract: WSA3
    Text: Philips Components-Signetics Document No. 853-0126 74S301 ECN No. 86487 256-bit TTL bipolar RAM Date of Issue November 11, 1986 Status Product Specification Memory Products PIN CONFIGURATION DESCRIPTION FEATURES The 74S301 is a Read/Write memory array which features an Open-Collector


    OCR Scan     		74S301 256-bit 74S301 WSA3 PDF

    74S206

    Abstract: 74s201
    Text: 54/74S ELECTRICAL CHARACTERISTICS See Notes - Page 50 INPUT VOLTAGE V|L (V) PARAMETER TEST CONDITIONS LOW LEVEL VÇC~MIN MIN TYP MAX OUTPUT VOLTAGE V|C(V) V|H (V) HIGH LEVEL CLAMP VOLTAGE V çç= M IN VCC = “ IN l|=-18 mA MIN TYP MAX MIN TYP VOH (V) HIGH LEVEL


    OCR Scan     		54/74S 54/74S00 54/74S02 54/74S03 54/74S04 54/74S05 54/74S260 54/74S280 54/74S301 74S206 74s201 PDF

    74S301

    Abstract: TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 82LS181 N82LS181 S82LS181 N82S141 TBP28P86
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 9 2 -BIT BIPOLAR P R O M 1 0 2 4 X 8 DESCRIPTION The 82LS181 is field programmable, which mea ns that custom patterns are immediately available by following the fusing procedure given in this data manual. The 82LS18I is


    OCR Scan     		8192-BIT 1024x8) 82LS181 82LS181 82LS18I N82LS181, n82hs185 n82s25 n82s16 74S301 TBP28S42 SIGNETICS prom 1024x8 PROM n82s123 N82LS181 S82LS181 N82S141 TBP28P86 PDF

    74s* programming

    Abstract: N82S16 prom 256x4 bit MCM10149 MCM7620 MCM7621 MCM7641C MCM7643C MCM7681C N82HS137
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR M EM ORY CROSS REFERENCE BIPOLAR M EM O RY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIGNETICS T.l. SIGNETICS *10149 N82S130 N82S131


    OCR Scan     		MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 74s* programming N82S16 prom 256x4 bit MCM10149 MCM7681C N82HS137 PDF

    74s188 programming

    Abstract: 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions
    Text: The E ngineering Staff of TEXAS INSTRUMENTS INCORPORATED Semiconductor Memory Data Book y for \ T exas In Design Engineers s t r u m e n t s >le of Contents • Alphanumeric Index • GENERAL INFORMATION Selection Guides • Glossary INTERCHANGEABILITY GUIDE


    OCR Scan     		38510/MACH MIL-M-38510 74s188 programming 74S471 N82S06 74S470 dip18 package str 52100 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 74S472 PROM PROGRAMMING 8080a 74S287 programming instructions PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8 PDF

    6301-1 prom

    Abstract: 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137
    Text: BIPOLAR MEMORY DIVISION MAY 1982 8192-BIT BIPOLAR PROM 1024 x 8 82HS181 /82HS181A (T.S.) DESCRIPTION FEATURES The 82HS181 is fie ld p rog ra m m a b le , w h ich m eans th a t cu s to m p a tte rn s are im ­ m e d ia te ly a va ila b le by fo llo w in g th e fu s in g


    OCR Scan     		8192-BIT 1024x8) 82HS181/82HS181A 82HS181 N82HS185 N82S25 N82S16 TBP18SA030J, 6301-1 prom 3622 prom mmi 3601 PROM 3601 intel 3601 PROM PROM intel 3601 9344C N82S141 74S189 N82S137 PDF

    N82S191

    Abstract: 6301-1 prom 82S191 SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 16,384-BIT BIPOLAR PROM 2048 X 8 DESCRIPTION The 82S191 Is field programmable, which means that custom patterns are Immediate­ ly available by following the fusing proce­ dure given in this data manual. The 82S191 is supplied with all outputs at a logical low.


    OCR Scan     		384-BIT 2048x8) 82S191 82S191 N82S191 N82HS185 N82S25 N82S16 6301-1 prom SIGNETICS prom 6331-1 PROM intel 3601 SIGNETICS prom n82s141 74S200 HM76161-5 93427C PDF

    N82S141

    Abstract: 82HS191 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130
    Text: MAY 1982 BIPOLAR M EM O RY DIVISION 16,384-BIT BIPOLAR PROM 2 0 4 8 x 8 _ 82HS191 (T.S.) DESCRIPTION PIN CONFIGURATIONS T h e 82H S 191 is fie ld p r o g r a m m a b le , w h ic h m e a n s th a t c u s to m p a tte rn s a re im m e d ia te ­


    OCR Scan     		384-BIT 2048x8) 82HS191 82HS191 The82HS191 N82HS191, N82HS185 N82S25 N82S16 N82S141 MCM10149 N82S137 74S301 N82LS181 CE23 MCM7620 N82HS191 N82S130 PDF

    74S201

    Abstract: 82S117 8205 cam memory circuit 2102-2 RAM 82s25 rom signetics 2670 82S214 2102 SRAM signetics 2501
    Text: signotics 8204 8205 82S 214 82S215 20 4 8 -B IT BIPOLAR ROM 256x8 ROM ) 4 0 9 6 -B IT B IPOLAR ROM (512x8 ROM ) D IG ITA L 8000 S ER IES T T L / M E M O R Y DESCRIPTION PIN CONFIGURATION The 8 2 0 4 /8 2 S 2 1 4 and 8 2 0 5 /8 2 S 2 1 5 are S ch ottk y -c la m p e d


    OCR Scan     		2048-BIT 256x8 4096-BIT 512x8 8204/82S214 8205/82S215 25L01 21L02 74S201 82S117 8205 cam memory circuit 2102-2 RAM 82s25 rom signetics 2670 82S214 2102 SRAM signetics 2501 PDF

    SN74S301

    Abstract: SN74S201 D2007 S201 S301 A5GND TS201 S30-1
    Text: SN74S201, 74S301 256 BIT HIGH PERFORMANCE RANDOM ACCESS MEMORIES D 2 0 0 7 , SEPTEM BER 1 9 7 7 — FEBRU AR Y 1 9 8 4 STATIC RANDOM-ACCESS MEMORIES • Static Fully Decoded RAM's Organized as 256 Words of One Bit Each • Schottky Clamped for High Performance


    OCR Scan     		SN74S201, SN74S301 D2007, 1977-FEBRUARY sn74s301 256-bit SN74S201 D2007 S201 S301 A5GND TS201 S30-1 PDF

    SIGNETICS

    Abstract: N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41
    Text: MAY 1982 BIPOLAR MEMORY DIVISION BIPOLAR MEMORY CROSS REFERENCE BIPOLAR MEMORY CROSS REFERENCE Continued MOTOROLA MCM10149 MCM7620 MCM7621 MCM7643C MCM7641C MCM7681C MCM82708C MCM7685C 4064 4256 10422 10470 SIG NETICS T.l. SIG NETICS *10149 N82S130 N82S131


    OCR Scan     		MCM10149 MCM7620 N82S130 MCM7621 N82S131 MCM7643C N82S137 N82HS137 MCM7641C N82S141 SIGNETICS N82S137 signetics bipolar memory cross reference N82S191 n82s25 TBP28P86 74S289 N82S141 N82S129 TBP24S41 PDF

    N82S185

    Abstract: N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601
    Text: BIPOLAR M E M O R Y M AY 1962 8192-BIT BIPOLAR PROM 2 0 4 8 x 4 82S185(T.S.) DESCRIPTIO N FEATURES T h e 82S 185 is fie ld p ro g ra m m a b le , w h ic h


    OCR Scan     		8192-BIT 2048x4) 82S185 82S185 N82S185, N82HS185 N82S25 N82S16 N82S185 N82S141 93427c 74S200 N82S147 6331-1 6301-1 prom 74S301 DM74S287 PROM intel 3601 PDF

    N82S141

    Abstract: 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C
    Text: MAY 1982 BIPOLAR MEMORY DIVISION 8 1 92-BIT BIPOLAR PROM 2 0 4 8 x 4 _ 82HS485/82HS185A (T.S.) DESCRIPTION FEATURES The 82HS185 is fie ld program m able, vihich means th a t cu sto m patte rn s are im m ed iate ­ ly available by fo llo w in g th e fu sin g p roce ­


    OCR Scan     		8192-BIT 2048x4) 82HS185/82HS185A 82HS185 N82HS185 N82S25 N82S16 TBP18SA030J, N82S141 93427c 6331-1 N82S137 mmi 6301-1 74S200 N82S129 74S206 MMI 6341-1 AM27S29C PDF

    2650B

    Abstract: wf vqc 10d alu 9308 d Signetics 2650 SN52723 2650 cpu 82S103 pipbug Signetics NE561 cd 75232
    Text: flcnCTICf ßii>ouiR/mos fflICROPROCEÍSOR DATfl mnnuni SIGNETICS reserves the right to make changes in the products contained in this book in order to improve design or performance and to supply the best possible products. Signetics also assumes no responsibility for the


    OCR Scan     		PDF

    74LS189 equivalent

    Abstract: 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00
    Text: Advanced Micro Devices Condensed Catalog 1981 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products without notice in order to improve design or performance characteristics. The company assumes no responsibility for the use of any circuits described herein.


    OCR Scan     		AMD-599 LM101 SN54LS01 132nd 74LS189 equivalent 74LS200 AmZ8036 Z8104 74LS300 AM9511 Am2505 27s13 54S244 27LS00 PDF

    triac tag 8518

    Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
    Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference


    OCR Scan     		PDF

    TCA965 equivalent

    Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
    Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated


    OCR Scan     		DG211. DG300 DG308 DG211 TCA965 equivalent ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401 PDF

    ttl nand gate

    Abstract: B237 CD 5888 N74S04 transistor b143 e.s N74S00 ITT301 74s200 N74S00N N74S02N
    Text: Signetics Integrated Circuits Schottky TTL Schottky TTL 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


    OCR Scan     		N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A ttl nand gate B237 CD 5888 N74S04 transistor b143 e.s N74S00 ITT301 74s200 PDF

    diode LT 42 PR 3002

    Abstract: 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141
    Text: Signetics Integrated Circuits Schottky T T L Schottky T T L 74S Series Introduction S c h o ttk y T T L uses a d io d e cla m p design to ensure th e highest speed possible at T T L lo g ic levels ty p ic a lly 3ns gate p ro p a g a tio n de la y and 9 0 M H z f lip f lo p to g gle rate. H o w ever th e y rem ain c o m p a tib le w ith


    OCR Scan     		N74S00N 55376D N74S02N 55377B N74S03N 55378X N74S04N 55379R N74S05N 5380A diode LT 42 PR 3002 5603A intersil b34 DIODE schottky ic 74s201 mmi 6331 74s188 74S474 74S288 FU 3024 82s141 PDF