MSC5301B-01GS-BK
Abstract: 11 pin 8 segment LcD MSC5301B-01 QFP100-P-1420-BK C14EE
Text: O K I Semiconductor MSC5301B-01 COMMON/SEGMENT DRIVER WITH RAM GENERAL DESCRIPTION The MSC5301B-01 is an LCD driver LSI w ith a built-in RAM. The device's bit m apping m ethod offers greater flexibility in w hich each bit of the RAM for display controls each section on the LCD
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MSC5301B-01
MSC5301B-01
100-pin
QFP100-P-1420-BK)
MSC5301B-01GS-BK)
002300b
MSC5301B-01GS-BK
11 pin 8 segment LcD
QFP100-P-1420-BK
C14EE
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MSM7540
Abstract: MSM7560
Text: O K I Semiconductor M SM 7540/7560 Single Rail ADPCM CODEC GENERAL DESCRIPTION The MSM7540 /7560 are single ch an n el A DPCM COD EC ICs w h ich p erfo rm m u tu a l tran sco d in g b etw een an alo g voice b a n d signal a n d 32 k b p s A DPCM serial data.
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MSM7540/MSM7560
MSM7540
oM7540/7560
b7245M0
MSM7560
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SN 16880
Abstract: ha 1758 ITS 7166 CI 7473 KGF1312 SiI 0649 HA 17358 oki LOT NUMBER marking MA 17358
Text: O K I electronic components KGF1 3 1 2 _ Power FET for UHF-Band Frequencies Plastic Mold Type GENERAL DESCRIPTION The K G F1312, housed in an SO T-89 typ e plastic-m old package, is a discrete U H F band pow er FE T that features high efficiency and high outpu t pow er. The K G F1312 specifications are
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KGF1312_
KGF1312,
OT-89
KGF1312
b724240
00ES7Ã
KGF1312
72M2M0
SN 16880
ha 1758
ITS 7166
CI 7473
SiI 0649
HA 17358
oki LOT NUMBER marking
MA 17358
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A5 GNC
Abstract: TSOP32-P-4QO-K 51V17400 5116100
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64m
A5 GNC
TSOP32-P-4QO-K
51V17400
5116100
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM7543/7544 Single Rail CODEC GENERAL DESCRIPTION The M SM 7543 and M SM 7544 are single-channel C O D E C C M O S ICs for voice signals ranging from 300 to 3400 Hz. These devices contain filters for A /D and D / A conversion. D esigned especially for a single-pow er supply and low -pow er applications, these d evices are
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MSM7543/7544
7508B
7509B.
b724240
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Bv 42 transistor
Abstract: M5116 tsop50 42-PIN 50-PIN MSM51V16190-70 MSM51V16190-80 TSQP28-P-400-K
Text: O K I Semiconductor MSM51V16190 1,048,576-Word x 18-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16190 is a new generation Dynamic RAM organized as 1,048,576-word x 18-bit configuration. The technology used to fabricate the MSM51V16190 is OKI's CMOS silicon gate process technology.
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MSM51V16190
576-Word
18-Bit
MSM51V16190
cycles/64ms
Bv 42 transistor
M5116
tsop50
42-PIN
50-PIN
MSM51V16190-70
MSM51V16190-80
TSQP28-P-400-K
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lcd 4x20
Abstract: TLC 33T LCD dot tlc 711 MSM6355GS MSM6669 MSM6669AV-Z SEG80 45HZ LCD tlc 711
Text: O K I Semiconductor MSM6669AV-Z 80-DQT SEGMENT DRIVER TCP GENERAL DESCRIPTION The MSM6669A V-Z is a dot matrix LCD segm ent driver w hich is fabricated by CMOS low pow er m etal gate technology. This LSI consists of 80-bit bidirectional register, 80-bit latch, 80-bit level shifter, and 80-dot 4-level
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MSM6669AV-Z
MSM6669A
80-bit
80-dot
MSM6669AV-Z
MSM6669AV-Zs
lcd 4x20
TLC 33T
LCD dot tlc 711
MSM6355GS
MSM6669
SEG80
45HZ
LCD tlc 711
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor M SC23B21-XXBS4/DS4 524,288-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23B21-xxBS4/DS4 is a fully decoded 524,288-word x 36-bit CMOS Dynamic Random Access Memory Module composed of four 4-Mb DRAMs 256K x 18 in SOJ packages
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SC23B21-XXBS4/DS4
288-Word
36-Bit
MSC23B21-xxBS4/DS4
72-pin
MSC23B21-xxBS4
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Untitled
Abstract: No abstract text available
Text: OKI semiconductor MSM8 0 C3 1 F/MSM8 0 C5 1 F CMOS SINGLE-COMPONENT 8 -BIT MICROCONTROLLER GENERAL DESCRIPTION The OKI M SM 80C31F/M SM 80C51 F m icrocontroller is a low power, high performance 8-bit single component device implemented in O KI's silicon gate complem entary metaf oxide sem iconductor
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80C31F/M
80C51
MSM80C51F
16-bit
b72M5M0
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C422ZB 262,144-W ord x 16-B it or 524,288-W ord x 8 -Bit O ne Tim e PROM ' D E S C R IP TIO N The M SM27C422ZB is a 4 Mb electrically Program mable Read-Only Memory whose configuration can be electrically switched betw een 262,144 words x 16 bits and 524,288 w ords x 8 bits. The M SM 27C422ZB
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MSM27C422ZB
144-Word
16-Bit
288-Word
MSM27C422ZB
40-pin
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photo sensor pin diagram
Abstract: transistor 1BT transistor 1BT 12 nIc 4 PHOTO SENSOR of application OCS33 vak-50v 1Bt 60
Text: OKI electronic components OCS33 Optical PNPN Switches GENERAL DESCRIPTION The OCS33 is an optical PNPN switch, combining a GaAs infrared light emitting diode and a silicon PNPN photo sensor in a single 8-pin plastic package. The GaAs light emitting diode acts as the input
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OCS33
b724S40
OCS33
72M2M0
photo sensor pin diagram
transistor 1BT
transistor 1BT 12
nIc 4
PHOTO SENSOR of application
vak-50v
1Bt 60
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77-AH
Abstract: No abstract text available
Text: SflE D • b?24240 □ □ 14 54 cl 77A H O K I J O K I Semiconductor M S C 1 1 8 7 -X X » * 1 se" T - S « « " » uc Z ' lS » -_ < 2 > 9 WUP " 33-BIT SEGM ENT DRIVER WITH DIM M ING FUNCTION GENERAL DESCRIPTION The M SC1187-XX is a vacuum fluorescent
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33-BIT
SC1187-XX
MSC1187-XX
77-AH
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM534032B 262,144-Word x 16-Bit or 524,288-Word x 8-Bit Low-Voltage Mask ROM DESCRIPTION The OKI MSM534032B is a high-speed CMOS Mask ROM that can electrically switch between 262,144word x 16-bit and 524,288-word x 8-bit configurations. The MSM534032B operates on a single 3.0 V or
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MSM534032B
144-Word
16-Bit
288-Word
MSM534032B
144word
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bk 1079
Abstract: MSC1191 MSC1192 2M240
Text: O K I Semiconductor MSC1191/1192 DIRECT DRIVE SPEAKER AMPLIFIER GENERAL DESCRIPTION MSC1191/1192 is a low voltage, low current consumption type power amplifier IC devel oped for driving the speaker in a speech synthesizer application. It directly drives a
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MSC1191/1192
MSC1191/1192
MSC1191
MSC1192
b72424G
112xll2nm
bk 1079
2M240
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a316j
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V1000A 1,048,576-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V1000A is a 1,048,576-word x 1-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V1000A achieves high integration, high-speed operation, and low-power
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MSM51V1000A
576-Word
MSM51V1000A
26/20-pin
20-pin
S424D
a316j
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cro circuit diagram
Abstract: MSM7582 MSM7582B
Text: O K I Semiconductor MSM75 8 2 /75 8 2 B ji/ 4 Shift QPSK MODEM GENERAL DESCRIPTION The M S M 7582/7582B are CMOS ICs for the j t/4 shift QPSK m odem developed for the digital cordless telephone systems. The devices are designed for Personal and Cell station applications, the MSM7582B is the
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MSM7582
MSM7582B
7582/7582B
MSM7582B
7582B
L72424D
cro circuit diagram
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM27C422ZB 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The M SM 27C422ZB is a 4 Mb electrically Program mable Read-Only Memory whose configuration can be electrically switched betw een 262,144 words x 16 bits and 524,288 w ords x 8 bits. The M SM 27C422ZB
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MSM27C422ZB
144-Word
16-Bit
288-Word
27C422ZB
27C422ZB
40-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V16160A 1,048,576-Word x 16-Bit D Y N A M IC R A M : FA ST P A G E M O D E T Y P E DESCRIPTION The MSM51V16160A is a 1,048,576-word x 16-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V16160A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V16160A is
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MSM51V16160A
576-Word
16-Bit
MSM51V16160A
42-pin
50/44-pin
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a11u
Abstract: h a 431 transistor RAS 05 msm5116800 023ag
Text: O K I Semiconductor MSM5116800_ 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116800 is a new generation Dynamic RAM organized as 2,097,152-word x 8-bit configuration. The technology used to fabricate the MSM5116800 is OKI's CMOS silicon gate process technology.
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MSM5116800_
152-Word
MSM5116800
cycles/64ms
MSM5116800
b724240
001744D
a11u
h a 431 transistor
RAS 05
023ag
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801CX
Abstract: MSM63238
Text: O K I Semiconductor MSM63238 Built-in POCSAG Decoder 4-Bit Microcontroller GENERAL DESCRIPTION The MSM63238 is a CMOS4bit microcontroller with a POCSAG Post Office Code Standardization Advisory Group decoder. The MSM63238 has an OKI-original n X -4/2 5 0 CPU core and is best suited to pager applications.
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MSM63238_
MSM63238
nX-4/250
Hz/38
Hz/76
b754E4Q
MSM63238
b7P4240
801CX
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IC 74164
Abstract: M6962 m6963 ic 74161 pin diagram of ic 74164 MSM6962RS 74164 with ic PIN DIAGRAM FAF 37 DIODE 74161 MSM6962
Text: O K I Semiconductor MSM6962/6963 Single Chip CODEC GENERAL DESCRIPTION The MSM6962and MSM6963are a single-channel CODEC CMOS ICs containing filters for A / D and D /A converting of the voice signal ranging from 300 Hz to 3400 Hz. FEATURES • Compliance with ITU-T com panding Law
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MSM6962/MSM6963
MSM6962and
MSM6963are
MSM6962:
MSM6963:
16-pin
DIP16-P-300)
b72424D
IC 74164
M6962
m6963
ic 74161
pin diagram of ic 74164
MSM6962RS
74164 with ic PIN DIAGRAM
FAF 37 DIODE
74161
MSM6962
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fsk dtmf circuit diagram
Abstract: multi fsk modem U2765 M7516 MSM7515GS-VK MSM7515RS MSM7516GS-VK MSM7516RS QDS2113 equalizer HF modem
Text: O K I Semiconductor MSM7515/7516 Multi-Function Telecommunication LSI GENERAL DESCRIPTION The M SM 7515/7516 provides three kinds of functions w hich are often applied for telephone terminal equipm ent. Those are DTMF generator, DTMF receiver and low speed 1200 bps FSK m odem defined as V.
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MSM7515
MSM7516
version-MSM6888B-provides
MSM7516
511PN
MSM7515/7516
b724240
fsk dtmf circuit diagram
multi fsk modem
U2765
M7516
MSM7515GS-VK
MSM7515RS
MSM7516GS-VK
MSM7516RS
QDS2113
equalizer HF modem
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MSM51V16100
Abstract: 2M2H
Text: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
MSM51VI6100
cycles/64ms
72M2MD
0D173Ã
MSM51V16100
2M2H
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM51V17800A 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V17800A is a 2,097,152-word x 8-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM51V17800A achieves high integration, high-speed operation, and lowpower consumption due to quadruple polysilicon double metal CMOS. The MSM51V17800A is
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MSM51V17800A
152-Word
MSM51V17800A
28-pin
cycles/32
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