ZVP3306F
Abstract: No abstract text available
Text: PLESSEY S EM IC ON D/ D I SC R E T E □3 DE~p 722D533 □00b7bb fl 7 ~ - * 2 7 -^ 2 0 - P-channe! enhancement mode vertical DMOS FET ZVP3306F , ABSOLUTE M AXIM UM RATINGS Parameter Symbol Drain-source voltage SOT-23 -6 0 V -0 .0 9 A Idm -1 .6 A v gs ±20
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722D533
00b7bb
ZVP3306F
OT-23
72SD533
D00t7ta
j7ZaOS33
7aaDS33
G0Db77D
ZVP3306F
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plessey
Abstract: zvn1409 G146
Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •
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7520S33
QDG5L37
ZVN1409
G-142
7EB0S33
0DDSL41
G-143
7SSDS33
00DSb45
plessey
zvn1409
G146
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Untitled
Abstract: No abstract text available
Text: PLESSEY TS SEMICOND/DISCRETE 7220533 P LE S SE Y S EM I C O N D / D I S C R E T E • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling DESCRIPTION A compact Interdigitated geometry forms the
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G-123
7EE0533
G-124
G-125
G-126
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Untitled
Abstract: No abstract text available
Text: 7 PLESSEY SEMICOND/DISCRETE dF| 7 5 2 0 S 3 B D D G b b a O 5 | ~ ^ ~ Q 3 BC856 BC858 BC860 PNP silicon planar general purpose transistors BC857 BC859 A B S O L U T E M A X I M U M R A TIN G S Parameter Sym bol Collector-base voltage V cbo BC856 -8 0 BC857
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BC856
BC858
BC860
BC857
BC859
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