G-329
Abstract: ZVP3306 ZVP3306A
Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE ZVP2220 DE I 75EDS33 ODOSflEE 1 9SD 05822 T '3 7 \ 2 5 G-324 PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/DISCRETE G-325 d F | 7S2[]S33 QOaSflES □ |~~ 95D 05 823 D PLESSEY SEMICOND/DISCRETE
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75EDS33
ZVP2220
G-324
G-325
7EE0533
G-326
7220S33
-r-31-25'
ZVP3306
G-329
ZVP3306
ZVP3306A
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ZVN0545
Abstract: ZVN0545L
Text: ^5 PLESSEY SEtlICOND/DISCRETE 7220533 PLESSEY SEMICOND/ D I S C R E T E N-channel enhancement mode vertical DMOS FET DE~| 7520533 0005b3S □ | ~ 95D 05635 T ' 3 s5 ZVN0545 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown
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0005b3S
ZVN0545
ZVN0545A*
ZVN0545B
ZVN0545L
100mA,
100mA
G-138
ZVN0545
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PLESSEY SP
Abstract: No abstract text available
Text: PLESSEY SEMICOND/DISCRETE 7220533 ^5 PLESSEY d F | ? E S 0S33 95D 0 55 83 SEMICOND/DISCRETE N-channel enhancem ent mode vertical D M O S FET GGGSSfla b VN 10L FEATURES • C o m p a c t ge om etry • F a s t sw itc h in g sp e e d s • N o se c o n d a ry b re a k d o w n
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755D533
5aG533
PLESSEY SP
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5D diode
Abstract: ZVN3310 00573E D7950 sw S O T-3 2 3
Text: PLESSEY SEHICOND/DISCRETE TS 7 2 2 0 5 3 3 P L E S S E Y S E M I C O N D /DI S C R E T E DE 1 7 2 5 G 533 □□□S 7 3 S 3 | 9S D 0 5 7 3 5 T '3 S - i5 ZVN 3310 N-channel enhancement mode vertical D M O S FET FEATURES • Com pact geometry • Fast sw itching speeds
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752DS33
0DG573fl
G-240
00573e
G-241
ZVN3310
G-242
G-243
000574E
5D diode
ZVN3310
00573E
D7950
sw S O T-3 2 3
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Untitled
Abstract: No abstract text available
Text: PLESSEY TS SEMICOND/DISCRETE 7220533 P LE S SE Y S EM I C O N D / D I S C R E T E • Fast switching speeds • No secondary breakdown • Excellent temperature stability • High input impedance • Low current drive • Ease of paralleling DESCRIPTION A compact Interdigitated geometry forms the
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G-123
7EE0533
G-124
G-125
G-126
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