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    plessey

    Abstract: zvn1409 G146
    Text: PLESSEY SEMICOND/DISCRETE ~^5 DE~| 7520S33 QDG5L37 3 |~~ 7220533 PLESSEY SEMICOND/DISCRETE 95D 05637 T - ^ r - N-channel enhancement mode vertical DMOS FET D ; z r ZVN1409 FEATURES • Compact geometry • Fast switching speeds • No secondary breakdown •


    OCR Scan     		7520S33 QDG5L37 ZVN1409 G-142 7EB0S33 0DDSL41 G-143 7SSDS33 00DSb45 plessey zvn1409 G146 PDF

    Untitled

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE □3 7 N-channel enhancement mode vertical DMOS FET dF | 722G533 □00b73fl 3 • ?- a s - ZVN3310F A B SO LU T E M AXIM UM R ATIN G S Parameter SO T-23 Symbol Unit V DS 100 V 'd 0.1 A 2 A ±20 V Drain-source voltage Continuous drain current at T A = 2 5 °C


    OCR Scan     		722G533 00b73fl ZVN3310F 7520S33 DDb74a PDF

    g229

    Abstract: ZVN3306B
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS SEMICOND/ DISCRETE De J ? 2 S D S 3 3 95D 05727 N-channel enhancement mode vertical D M O S FET FEATU RES • Com pact geometry • Fast sw itching speeds • No secondary breakdown • Excellent temperature stability


    OCR Scan     		ZVN3306A ZVN3306B ZVN3306F 0D0S727 G-233 7520S33 G-234 G-235 725DS33 DDD5734 g229 PDF