70HF100
Abstract: 70HF120 70HF140 70HF160 70HF20 70HF40 70HF80 70HFR10 70HFR100 70HFR140
Text: 2002-03-26 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 70-365-36 70HF100 diod 1000V 70A 70-365-44 70HF120 diod 1200V 70A 70-365-50 70HF140 diod 1400V 70A 70-365-69 70HF160 diod 1600V 70A
|
Original
|
70HF100
70HF120
70HF140
70HF160
70HF20
70HF40
70HF80
70HFR10
70HFR100
70HFR140
|
PDF
|
D70N03L
Abstract: D70N03L-1 JESD97 STD70N03L STD70N03L-1
Text: STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET III Power MOSFET General features • Type VDSS RDS on ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A ■ Conduction losses reduced ■ Switching losses reduced
|
Original
|
STD70N03L
STD70N03L-1
D70N03L
D70N03L-1
JESD97
STD70N03L
STD70N03L-1
|
PDF
|
0N06
Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.
|
Original
|
RFG70N06,
RFP70N06,
RF1S70N06SM
RFP70
0N06S
RFG70N06
O-247
O-220AB
175oC
TB334
0N06
RFP70N06
RF1S70N06SM
TB334
RF1S70N06SM9A
RFG70N06
F1S70N06
rfp70
|
PDF
|
P70NF
Abstract: B70NF03L STB70NF03L-1 JESD97 STB70NF03L STP70NF03L
Text: STB70NF03L STP70NF03L - STB70NF03L-1 N-channel 30V - 0.0075Ω - 70A - D2PAK - I2PAK - TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STB70NF03L 30V < 0.0095Ω 70A STP70NF03L 30V < 0.0095Ω 70A STB70NF03L-1 30V < 0.0095Ω
|
Original
|
STB70NF03L
STP70NF03L
STB70NF03L-1
O-220
STP70NF03L
P70NF
B70NF03L
STB70NF03L-1
JESD97
STB70NF03L
|
PDF
|
STD70N03L-1
Abstract: D70N03L D70N03L-1 JESD97 STD70N03L
Text: STD70N03L STD70N03L-1 N-channel 30V - 0.0059Ω - 70A - DPAK / IPAK STripFET III Power MOSFET General features • Type VDSS RDS on ID STD70N03L 30V <0.0073Ω 70A STD70N03L-1 30V <0.0073Ω 70A ■ Conduction losses reduced ■ Switching losses reduced
|
Original
|
STD70N03L
STD70N03L-1
STD70N03L-1
D70N03L
D70N03L-1
JESD97
STD70N03L
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FZ06NPA070FP preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● SiC buck diode ● low inductance layout Target Applications
|
Original
|
FZ06NPA070FP
00V/75A
|
PDF
|
General Electric thyristor
Abstract: MFC55A MTC55A MFC55 thyristor battery charger circuit with notes
Text: Thyristor/Thyristor Module Thyristor/Diode Module MTC55A/70A MFC55A/70A MECHANICAL DESCRIPTION The MTC, MFC module, combines the excellent thermal performances obtained by the usage of exposed direct bonded copper substrate, with advanced compact simple package solution and simplified internal structure with
|
Original
|
MTC55A/70A
MFC55A/70A
General Electric thyristor
MFC55A
MTC55A
MFC55
thyristor battery charger circuit with notes
|
PDF
|
RFP70N03
Abstract: No abstract text available
Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB
|
Original
|
RFP70N03,
RF1S70N03SM
0N03S
O220AB
O263AB
RFP70N03
|
PDF
|
diode 70A
Abstract: 400v 70a
Text: DIODE MODULE DWF R 70A30/40 DWF R 70A is a non-isolated diode module designed for 3 phase rectification. IF AV 70A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability
|
Original
|
70A30/40
70A30
70A40
diode 70A
400v 70a
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIODE MODULE DWF R 70A30/40 DWF R 70A is a non-isolated diode module designed for 3 phase rectification. IF AV 70A, VRRM 400V Easy Construction with Joint-Cathode F Type and Joint-Anode R type. Non-isolated. Mounting Base as terminals. High Surge Capability
|
Original
|
70A30/40
31max
M5X10
70A30
70A40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FZ06NPA070FP01 preliminary datasheet flowNPC 0 600V/75A & 70A PS* Features flow0 12mm housing ● *PS: 70A parallel switch 60A PT and 99mΩ ● neutral point clamped inverter ● reactive power capability ● low inductance layout Target Applications Schematic
|
Original
|
FZ06NPA070FP01
00V/75A
|
PDF
|
Rad Hard in Fairchild for MOSFET
Abstract: No abstract text available
Text: FSJ160D, FSJ160R 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs
|
Original
|
FSJ160D,
FSJ160R
Rad Hard in Fairchild for MOSFET
|
PDF
|
FSJ160D
Abstract: FSJ160D1 FSJ160D3 FSJ160R FSJ160R1 FSJ160R3 2E12 Rad hard MOSFETS in Harris
Text: FSJ160D, FSJ160R Semiconductor 70A, 100V, 0.022 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 70A, 100V, rDS ON = 0.022Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
|
Original
|
FSJ160D,
FSJ160R
O-254AA
MIL-S-19500
FSJ160D
FSJ160D1
FSJ160D3
FSJ160R
FSJ160R1
FSJ160R3
2E12
Rad hard MOSFETS in Harris
|
PDF
|
RFP70N06
Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω
|
Original
|
RFG70N06,
RFP70N06,
RF1S70N06SM
TA49007.
O-247
O-220AB
O-263AB
175oC
TB334
RFP70N06
RFP70N06
AN9321
AN9322
RF1S70N06SM
RF1S70N06SM9A
RFG70N06
TB334
|
PDF
|
|
|
fga70n33
Abstract: No abstract text available
Text: FGA70N33BTD tm 330V, 70A PDP IGBT Features General Description • High current capability • Low saturation voltage: VCE sat =1.7V @ IC = 70A Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP
|
Original
|
FGA70N33BTD
fga70n33
|
PDF
|
MDE1751
Abstract: trench mosfet
Text: 40V N-channel Trench MOSFET : 40V, 70A, 7.5mΩ General Description Features The MDE1751 uses advanced Magnachip’s trench MOSFET Technology to provide high VDS = 40V ID = 70A @VGS = 10V RDS ON < 7.5mΩ @ VGS = 10V < 9.5mΩ @ VGS = 4.5V performance in
|
Original
|
MDE1751
MDE1751
trench mosfet
|
PDF
|
16E-5
Abstract: HUF75339G3 HUF75339P3 HUF75339S3 HUF75339S3S HUF75339S3ST TA75339 TB334 75339S3
Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 Features Description • 70A, 55V • Ultra Low On-Resistance, rDS ON = 0.012Ω • Diode Exhibits Both High Speed and Soft Recovery
|
Original
|
HUF75339G3,
HUF75339P3,
HUF75339S3,
HUF75339S3S
TB334,
1-800-4-HARRIS
16E-5
HUF75339G3
HUF75339P3
HUF75339S3
HUF75339S3S
HUF75339S3ST
TA75339
TB334
75339S3
|
PDF
|
AN9321
Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
Text: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives
|
Original
|
RFP70N03,
RF1S70N03,
RF1S70N03SM
TA49025.
AN9321
AN9322
RF1S70N03
RF1S70N03SM
RF1S70N03SM9A
RFP70N03
TB334
|
PDF
|
RFP70N06
Abstract: No abstract text available
Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum
|
Original
|
RFP70N06
TA78440.
O-220AB
RFP70N06
|
PDF
|
FDB8444TS
Abstract: 439MJ
Text: FDB8444TS N-Channel PowerTrench MOSFET with Temperature Sensor tm 40V, 70A, 5mΩ Features Applications Typ rDS on = 3.8mΩ at VGS = 10V, ID = 70A Automotive Engine Control Typ Qg(TOT) = 130nC at VGS = 10V Powertrain Management Low Miller Charge
|
Original
|
FDB8444TS
130nC
FDB8444TS
439MJ
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SANSHA ELECTRIC MFG CO 5bE D OODDMMq 3E0 M S E I I J DIODE MODULE DW F R 70A T-u-oi DW F(R)70A is a non-isolated diode module designed for 3 phase rectification. • • • • If(av) = 70A, V rrM = 400V Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type.
|
OCR Scan
|
70A30
70A40
|
PDF
|
Untitled
Abstract: No abstract text available
Text: RFK70N06 Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFET September 1998 Features Description • 70A,60V • 175°C Operating Temperature The RFK70N06 N-Channel power MOSFET is manufactured using the MegaFET process. This process, which uses fea
|
OCR Scan
|
RFK70N06
RFK70N06
TA49007.
05e-4
11e-5)
1e-30
46e-4
48e-7)
23e-3
56e-6)
|
PDF
|
Untitled
Abstract: No abstract text available
Text: DIODE MODULE DWF R 70A D W F(R )7 0 A is a non-isolated diode module designed for 3 phase rectification. • If(av>= 70A, Vbbm = 400V • Easy Construction with Joint-Cathode(F)Type and Joint-Anode(R)Type. • Non-isolated. (Mounting Base as terminals.) • High Surge Capability
|
OCR Scan
|
70A30
70A40
B-161
D00S3E0
|
PDF
|
75339P3
Abstract: No abstract text available
Text: HUF75339G3, HUF75339P3, HUF75339S3, HUF75339S3S HARRIS S E M I C O N D U C T O R 70A, 55V, 0.012 Ohm, N-Channel, UltraFET Power MOSFETs March 1998 MM Features • 70A, 55V • Ultra Low On-Resistance, ros ON = 2i2 • Diode Exhibits Both High Speed and Soft Recovery
|
OCR Scan
|
HUF75339G3,
HUF75339P3,
HUF75339S3,
HUF75339S3S
TB334,
1-800-4-HARRIS
75339P3
|
PDF
|
