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    RFP70 Search Results

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    RFP70 Price and Stock

    Rochester Electronics LLC RFP70N03

    MOSFET N-CH 30V 70A TO220-3
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    DigiKey RFP70N03 Tube 5,567 204
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    onsemi RFP70N06

    MOSFET N-CH 60V 70A TO220-3
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    DigiKey RFP70N06 Tube 1,228 1
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    Avnet Americas RFP70N06 Tube 866 19 Weeks 50
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    Mouser Electronics RFP70N06 830
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    Arrow Electronics RFP70N06 5,300 19 Weeks 1
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    Newark RFP70N06 Bulk 250
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    TME RFP70N06 132 1
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    onsemi RFP70N03

    MOSFET N-CH 30V 70A TO220-3
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    Harris Semiconductor RFP70N03

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    Bristol Electronics RFP70N03 3,282 3
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    Quest Components RFP70N03 10,900
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    RFP70N03 960
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    RFP70N03 9
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    Rochester Electronics RFP70N03 5,567 1
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    Harris Semiconductor RFP70N06

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    Quest Components RFP70N06 3
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    RFP70 Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Type PDF
    RFP70N03 Fairchild Semiconductor 70A, 30V, 0.010 Ohm, N-Channel Power MOSFET Original PDF
    RFP70N03 Fairchild Semiconductor 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP70N03 Intersil 70A, 30V, 0.010 ?, N-Channel Power MOSFETs Original PDF
    RFP70N03 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 30V, 70A, Pkg Style TO-220AB Scan PDF
    RFP70N06 Fairchild Semiconductor 70A, 60V, 0.014 ?, N-Channel Power MOSFETs Original PDF
    RFP70N06 Harris Semiconductor 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs Original PDF
    RFP70N06 Intersil 70A, 60V, 0.014 ?, N-Channel Power MOSFETs Original PDF
    RFP70N06 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    RFP70N06 Intersil Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, P-Channel, 60V, 70A, Pkg Style TO-220AB Scan PDF
    RFP70N06_NL Fairchild Semiconductor 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Original PDF

    RFP70 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RFP70N03

    Abstract: RF1S70N03SM RF1S70N03SM9A RF1S70N03
    Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC TO-220AB • 70A, 30V SOURCE DRAIN GATE • rDS ON = 0.010Ω • Temperature Compensating PSPICE Model


    Original
    PDF RFP70N03, RF1S70N03, RF1S70N03SM O-220AB 175oC O-262AA RF1S70N03SM 05e-4 RFP70N03 RF1S70N03SM9A RF1S70N03

    RFP70N06

    Abstract: AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs • 70A, 60V Formerly developmental type TA49007. Ordering Information PACKAGE TO-247 RFG70N06 RFP70N06 TO-220AB RFP70N06 RF1S70N06SM TO-263AB F1S70N06 • rDS on = 0.014Ω


    Original
    PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. O-247 O-220AB O-263AB 175oC TB334 RFP70N06 RFP70N06 AN9321 AN9322 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    rfp70n06

    Abstract: No abstract text available
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet Title FG7 06, P70 6, 1S7 06S bt A, V, 14 m, anwer OSTs utho eyrds ter- July 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature


    Original
    PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. rfp70n06

    f1s70n03

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    Original
    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. 05e-4 11e-5) 1e-30 46e-4 48e-7) f1s70n03

    AN9321

    Abstract: AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
    Text: RFP70N03, RF1S70N03, RF1S70N03SM Data Sheet January 2002 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs Features • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    Original
    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. AN9321 AN9322 RF1S70N03 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334

    RFP70N06

    Abstract: No abstract text available
    Text: RFP70N06 September 2013 Data Sheet Features N-Channel Power MOSFET 60V, 70A, 14 mΩ • 70A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original
    PDF RFP70N06 TA78440. O-220AB RFP70N06

    RFP70N06

    Abstract: F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260 RF1S70N06
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM S E M I C O N D U C T O R 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs December 1995 Features Packages JEDEC STYLE TO-247 • 70A, 60V SOURCE DRAIN GATE • rDS on = 0.014Ω DRAIN (BOTTOM


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    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM O-247 175oC RF1S70N06 RFP70N06 F1S70N06 RF1S70N06SM RFG70N06 RF1S70N06SM9A AN7254 AN7260

    RFP70N06

    Abstract: TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original
    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB RFP70N06 TA78440 F1S70N06 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    AN9321

    Abstract: AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334
    Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding


    Original
    PDF RFP70N03, RF1S70N03SM TA49025. AN9321 AN9322 RF1S70N03SM RF1S70N03SM9A RFP70N03 TB334

    0N06

    Abstract: RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70
    Text: RFG70N06, RFP70N06, RF1S70N06SM Data Sheet MAY 2001 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs [ /Title RFG7 0N06, RFP70 N06, RF1S7 0N06S /Subject (70A, 60V, 0.014 Ohm, ChanPower MOSFETs /Autho /Keywords (Inter- • 70A, 60V Formerly developmental type TA78440.


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    PDF RFG70N06, RFP70N06, RF1S70N06SM RFP70 0N06S RFG70N06 O-247 O-220AB 175oC TB334 0N06 RFP70N06 RF1S70N06SM TB334 RF1S70N06SM9A RFG70N06 F1S70N06 rfp70

    RFP70N03

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03SM Data Sheet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs [ /Title RFP7 0N03, RF1S7 0N03S M /Subject (70A, 30V, 0.010 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB


    Original
    PDF RFP70N03, RF1S70N03SM 0N03S O220AB O263AB RFP70N03

    RFP70N06

    Abstract: F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original
    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB RFP70N06 F1S70N06 TA78440 AN9321 RF1S70N06 RF1S70N06SM RF1S70N06SM9A RFG70N06 TB334

    Untitled

    Abstract: No abstract text available
    Text: RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM Data Sheet 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum


    Original
    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM TA78440. RFG70N06 O-247 O-220AB O-262AA O-263AB

    HIP6004D

    Abstract: HIP6004DCB HIP6004DCB-T
    Text: HIP6004D TM Data Sheet April 2000 Buck and Synchronous-Rectifier PWM Controller and Output Voltage Monitor The HIP6004D provides complete control and protection for a DC-DC converter optimized for high-performance microprocessor applications. It is designed to drive two


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    PDF HIP6004D HIP6004D 85VDC HIP6004DCB HIP6004DCB-T

    Equivalent 50N06

    Abstract: MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 HIP6003 RFP70N03
    Text: A Pentium Pro Voltage Regulator Module VRM Using the HIP6003 PWM Controller Application Note December 1996 AN9664 Introduction HIP6003EVAL1 Reference Design Today’s high-performance microprocessors, such as the Intel Pentium Pro, present many challenges to their power


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    PDF HIP6003 AN9664 HIP6003EVAL1 Equivalent 50N06 MOSFET 50N06 po345 50N06 rfp50n06 equivalent 50N06 DATASHEET AN9664 HIP6002 RFP70N03

    48409

    Abstract: rfp70n03
    Text: RFP70N03 £ ü H A R R IS S E M I C O N D U C T O R March 1994 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET MegaFET Features • Package T 0 -2 2 0 A B 7 0 A .3 0 V TOP VIEW • *"d s <o n ) = 0 . 0 1 o n • U IS R a tin g C u rv e (S in g le P u lse )


    OCR Scan
    PDF RFP70N03 TA49025) 10-3O 1o-30 23e-3 49o-7) rev9/16/92 48409 rfp70n03

    rfp70n03

    Abstract: No abstract text available
    Text: [Q RFP70N03, RF1S70N03, RF1S70N03SM HARRIS S E M I C O N D U C T O R 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs December 1995 Packages Features JEDEC TO-220AB • 70A ,30V • rDS 0N = 0.01012 • Temperature Compensating PSPICE Model


    OCR Scan
    PDF RFP70N03, RF1S70N03, RF1S70N03SM O-220AB O-262AA RF1S70N03SM 87e-3 71e-3 rfp70n03

    RF1S70N03SM9A

    Abstract: No abstract text available
    Text: RFP70N03, RF1S70N03SM in t e r r ii D ata S h eet 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power M O SFETs are manufactured using the M egaFE T process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan
    PDF RFP70N03, RF1S70N03SM TA49025. 010C2 AN7254 AN7260. RF1S70N03SM9A

    F1S70N06

    Abstract: No abstract text available
    Text: P *3 3 S RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 70A,60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili­


    OCR Scan
    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 05e-4 11e-5) 1e-30 46e-4 F1S70N06

    rf1s70n

    Abstract: RF1S70N03SM9A
    Text: RFP70N03, RF1S70N03SM in t e g r i I J u l y 19 99 D ata S h e e t 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives


    OCR Scan
    PDF RFP70N03, RF1S70N03SM TA49025. RF1S70N03SM AN7254 AN7260. rf1s70n RF1S70N03SM9A

    F1S70N06

    Abstract: 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06
    Text: i l i H jlp s e m ic o n d u c to r A R R RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM IS 70A, 60V, Avalanche Rated, N-Channel Enhancement-Mode Power MOSFETs D ece m b e r 1995 Packages Features JE D E C STY LE TO -247 • 70A ,60V ' rDS(on = 0.014i2 • Temperature Compensated PSPICE Model


    OCR Scan
    PDF RFG70N06, RFP70N06, RF1S70N06, RF1S70N06SM 014i2 23e-3 29e-3 49e-7) 50e-7 84e-9 F1S70N06 70n06 1S70N06 FP70N 10i5 rfg70n06 rf1s70n fp70n06

    F1S70N03

    Abstract: rfp70n03
    Text: RFP70N03, RF1S70N03, RF1S70N03SM IHARRIS S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A, 30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan
    PDF RFP70N03, RF1S70N03, RF1S70N03SM TA49025. Curve-12 87e-3 71e-3 50e-7 84e-9 51e-8) F1S70N03 rfp70n03

    70n06 to 247

    Abstract: RFP70N06 70n06
    Text: in tefsil RFG70N06, RFP70N06, RF1S70N06SM D a ta S h e e t J u ly 1999 70A, 60V, 0.014 Ohm, N-Channel Power MOSFETs Features Formerly developmental type TA49007. Ordering Information PACK AG E RFG70N06 TO -247 RFG70N06 TO -220AB R FP70N 06 RF1S70N06SM TO -263AB


    OCR Scan
    PDF RFG70N06, RFP70N06, RF1S70N06SM TA49007. RF1S70N06SM AN7260. 70n06 to 247 RFP70N06 70n06

    Untitled

    Abstract: No abstract text available
    Text: HAFRFRIS RFP70N03, RF1S70N03, RF1S70N03SM S E M I C O N D U C T O R 70A, 30V, 0.010 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 70A,30V These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature


    OCR Scan
    PDF RFP70N03, RF1S70N03, RF1S70N03SM 50e-7 84e-9 51e-8) 05e-4 11e-5) 1e-30