2SC4520
Abstract: ITR07159 ITR07160 2SC452
Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
2SC4520
EN3139A
2SC4520
ITR07159
ITR07160
2SC452
|
Untitled
Abstract: No abstract text available
Text: 2SC4520 Ordering number : EN3139A SANYO Semiconductors DATA SHEET 2SC4520 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
2SC4520
EN3139A
250mm2â
|
2SC4520
Abstract: No abstract text available
Text: Ordering number:EN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.
|
Original
|
PDF
|
EN3139
2SC4520
2SC4520]
25max
2SC4520
|
ITR07161
Abstract: ITR07162 2SC4520 ITR07159 ITR07160
Text: Ordering number:ENN3139 NPN Epitaxial Planar Silicon Transistors 2SC4520 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
|
Original
|
PDF
|
ENN3139
2SC4520
2SC4520]
25max
ITR07161
ITR07162
2SC4520
ITR07159
ITR07160
|
2SC4521
Abstract: ITR07169 ITR07170
Text: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
2SC4521
EN3140B
2SC4521
ITR07169
ITR07170
|
2044B
Abstract: 2SC4522
Text: Ordering number:EN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions
|
Original
|
PDF
|
EN3141A
2SC4522
2045B
2SC4522]
2044B
2044B
2SC4522
|
2SC4521
Abstract: No abstract text available
Text: Ordering number:EN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.
|
Original
|
PDF
|
EN3140A
2SC4521
2SC4521]
25max
2SC4521
|
2SC4521
Abstract: ITR07169 ITR07170 ITR07171 ITR07172
Text: Ordering number:ENN3140A NPN Epitaxial Planar Silicon Transistors 2SC4521 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · High-speed switching.
|
Original
|
PDF
|
ENN3140A
2SC4521
2SC4521]
25max
2SC4521
ITR07169
ITR07170
ITR07171
ITR07172
|
2SC4519
Abstract: ITR07150 ITR07151 ITR07152 marking TT
Text: Ordering number:ENN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · High-speed switching. · Small-sized package.
|
Original
|
PDF
|
ENN3138
2SC4519
2018B
2SC4519]
2SC4519
ITR07150
ITR07151
ITR07152
marking TT
|
2044B
Abstract: 2SC4522 ITR07179 ITR07180
Text: Ordering number:ENN3141A NPN Epitaxial Planar Silicon Transistors 2SC4522 High-Speed Switching Applications Package Dimensions unit:mm 2045B [2SC4522] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
ENN3141A
2SC4522
2045B
2SC4522]
2044B
2044B
2SC4522
ITR07179
ITR07180
|
ITS 31422
Abstract: 2044B 2SC4522 2SC4523
Text: Ordering number:EN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. Package Dimensions
|
Original
|
PDF
|
EN3142A
2SC4523
2045B
2SC4522]
2044B
ITS 31422
2044B
2SC4522
2SC4523
|
2SC4519
Abstract: No abstract text available
Text: Ordering number:EN3138 NPN Epitaxial Planar Silicon Transistors 2SC4519 High-Speed Switching Applications Features Package Dimensions • Adoption of FBET process. · Low collector-to-emitter saturation voltage. · Fast switching speed. · Small-sized package.
|
Original
|
PDF
|
EN3138
2SC4519
2SC4519]
2SC4519
|
Untitled
Abstract: No abstract text available
Text: 2SC4521 Ordering number : EN3140B SANYO Semiconductors DATA SHEET 2SC4521 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications Features • • • • • Adoption of FBET, MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
2SC4521
EN3140B
|
ITS 31422
Abstract: 2044B 2SC4522 2SC4523 ITR07189
Text: Ordering number:ENN3142A NPN Epitaxial Planar Silicon Transistors 2SC4523 High-Speed Switching Applications Package Dimensions unit:mm 2045B [2SC4522] 2.3 1.5 6.5 5.0 4 5.5 • Adoption of FBET, MBIT process. · Large current capacity. · Low collector-to-emitter saturation voltage.
|
Original
|
PDF
|
ENN3142A
2SC4523
2045B
2SC4522]
2044B
ITS 31422
2044B
2SC4522
2SC4523
ITR07189
|
|
|
ITS 31422
Abstract: 2044B 2SC4523
Text: Ordering num ber: EN 3142A N0.3142A 2SC4523 NPN Epitaxial Planar Silicon Transistor i High-Speed Switching Applications Features . Adoption ofFBET, MBIT processes • Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed
|
OCR Scan
|
PDF
|
45ViIe
ITS 31422
2044B
2SC4523
|
2SC4520
Abstract: No abstract text available
Text: Ordering number: EN 3139 2SC4520 No.3139 i SANTO NPN E pitaxial P la n ar Silicon T ransistor i High-Speed Switching Applications F e a tu r e s . Adoption ofFB ET, MBIT processes • Large cu rre n t capacity • Low collector-to-em itter saturation voltage
|
OCR Scan
|
PDF
|
2SC4520
250mm2
|
Untitled
Abstract: No abstract text available
Text: SANYO SEMICONDUCTOR CORP SSE D 7 ^ 7 0 7 ^ 0007107 T -3 2SC4519 1 5 - I S . # 2018A N P N Epitaxial P la n a r S ilic o n T ran sis to r High-Speed Switching Applications 3133 Features . Adoption of FBET process • Low collector-to-emitter saturation voltage
|
OCR Scan
|
PDF
|
2SC4519
|
transistor kd 2059
Abstract: pa 2030a kd 2059 SANYO SS 1001 2SC4523 MARKING 2S SMA
Text: SANYO S E M I C O N D U C T O R CORP 55E D 7^707^ OD0.71 1 1 ö r-3S~n 2SC4523 ♦ NPN Epitaxial Planar Silicon Transistor 2044 • High-Speed Switching Applications 3142 F e a tu re s . Adoption o f F B E T , M BIT processes • Large current capacity •Low collector-to-emitter saturation voltage
|
OCR Scan
|
PDF
|
2SC4523
T-35-11
transistor kd 2059
pa 2030a
kd 2059
SANYO SS 1001
MARKING 2S SMA
|
D 3141 transistor
Abstract: 2044B 25CC 2SC4522
Text: Ordering number: EN 3141A 2 S C 4 52 2 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F eatures . Adoption of FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage • Fast switching speed
|
OCR Scan
|
PDF
|
2SC4522
D 3141 transistor
2044B
25CC
2SC4522
|
pa 2030a
Abstract: 2SC4520 QGQ711G K 2038
Text: SANYO SE MI COND UC TO R CORP 2SC4520 7*H707b Q0Q711G 1 22E D T ~ 3 5 ~ n % NPN Epitaxial Planar Silicon Transistor 2038 High-Speed Switching Applications 3I39 F ea tu res . Adoption o f FBET, MBIT processes • Large current capacity •Low collector-to-emitter saturation voltage
|
OCR Scan
|
PDF
|
n707fe,
QGQ711G
2SC4520
250mm2
pa 2030a
K 2038
|
Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN 3139 2SC4520 No.3139 NPN Epitaxial Planar Silicon Transistor High-Speed Switching Applications F e a tu re s . Adoption of FBET, MBIT processes •Large current capacity • Low collector-to-emitter saturation voltage • Fast switching speed
|
OCR Scan
|
PDF
|
2SC4520
250mm2
20IBi
800mA
7059MO
|
2SC4519
Abstract: 200YA
Text: Ordering num ber:E N 3138 2 S C4 5 19 No.3138 NPN Epitaxial P lanar Silicon Transistor SANYO i High-Speed Switching Applications F e a tu re s . Adoption of FBET process •Low collector-to-emitter saturation voltage • Fast switching speed . Small-sized package
|
OCR Scan
|
PDF
|
EN3138
2SC4519
200YA
|
Untitled
Abstract: No abstract text available
Text: I O rd e rin g n u m b e r: EN 3142A 2SC4523 N0.3142A sa i \ YO N PN E p itax ial P la n a r Silicon T ra n sisto r High-Speed Switching Applications F e a tu r e s • Adoption of FBET, MBIT processes • Large c u rre n t capacity • Low collector-to-em itter s a tu ra tio n voltage
|
OCR Scan
|
PDF
|
2SC4523
201B1
7130MH/7059MO
|