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    6N170 Search Results

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    6N170 Price and Stock

    IXYS Corporation IXGH16N170

    IGBT NPT 1700V 32A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGH16N170 Tube 2,549 1
    • 1 $10.62
    • 10 $10.62
    • 100 $6.727
    • 1000 $10.62
    • 10000 $10.62
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    Mouser Electronics IXGH16N170 971
    • 1 $8.25
    • 10 $8.19
    • 100 $6.72
    • 1000 $5.96
    • 10000 $5.96
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    Newark IXGH16N170 Bulk 427 1
    • 1 $9.85
    • 10 $9.15
    • 100 $7
    • 1000 $6.2
    • 10000 $6.2
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    Chip-Germany GmbH IXGH16N170 72
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    IXYS Corporation IXYH16N170C

    IGBT 1.7KV 40A TO247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXYH16N170C Tube 1,153 1
    • 1 $8.82
    • 10 $8.82
    • 100 $5.51533
    • 1000 $4.71763
    • 10000 $4.71763
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    Mouser Electronics IXYH16N170C 298
    • 1 $8.82
    • 10 $8.59
    • 100 $5.51
    • 1000 $4.72
    • 10000 $4.72
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    IXYS Corporation IXGT16N170A

    IGBT NPT 1700V 16A TO268AA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGT16N170A Tube 856 1
    • 1 $18.66
    • 10 $18.66
    • 100 $11.655
    • 1000 $18.66
    • 10000 $18.66
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    Mouser Electronics IXGT16N170A 3,114
    • 1 $16.3
    • 10 $14.7
    • 100 $10.78
    • 1000 $10.34
    • 10000 $10.34
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    TME IXGT16N170A 1
    • 1 $14.01
    • 10 $11.12
    • 100 $9.97
    • 1000 $9.97
    • 10000 $9.97
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    IXYS Corporation IXGR6N170A

    IGBT 1700V 5.5A 50W ISOPLUS247
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXGR6N170A Tube 300 1
    • 1 $14.72
    • 10 $14.72
    • 100 $9.55133
    • 1000 $14.72
    • 10000 $14.72
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    Mouser Electronics IXGR6N170A 300
    • 1 $14.72
    • 10 $14.09
    • 100 $9.55
    • 1000 $8.98
    • 10000 $8.98
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    IXYS Corporation IXBH6N170

    IGBT 1700V 12A TO247AD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IXBH6N170 Tube 298 1
    • 1 $10.97
    • 10 $10.97
    • 100 $6.964
    • 1000 $10.97
    • 10000 $10.97
    		Buy Now
    Mouser Electronics IXBH6N170 188
    • 1 $10.97
    • 10 $10.97
    • 100 $6.96
    • 1000 $6.21
    • 10000 $6.21
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    New Advantage Corporation IXBH6N170 436 1
    • 1 -
    • 10 -
    • 100 $14.19
    • 1000 $13.24
    • 10000 $13.24
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    Find more 6N170 price and stock on Findchips.com

    6N170 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    application notes IXGH 6N170

    Abstract: 6N170
    Text: Advance Technical Data High Voltage IGBT VCES IC25 VCE sat tfi(typ) IXGH 6N170 IXGT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		6N170 O-247 O-268 728B1 application notes IXGH 6N170 6N170 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data IXGQ 6N170AM High Voltage IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 6 A IC90 TC = 90°C ICM


    Original     		6N170AM 50/60Hz, 728B1 PDF

    IXGH 6N170

    Abstract: 6N170
    Text: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original     		6N170 6N170 O-268 O-247 IXGH 6N170 PDF

    IC1700

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		6N170A O-247 O-268 728B1 IC1700 PDF

    DS99004

    Abstract: 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd
    Text: Advanced Technical Information High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor IXBH 6N170 IXBT 6N170 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous


    Original     		6N170 O-247) 728B1 DS99004 6N170 smd diode 819 to-268 6N17 TRANSISTOR 610 smd PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V IC25


    Original     		6N170 6N170 O-268 O-247 i-247) 728B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: IXGH 6N170 IXGT 6N170 High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original     		6N170 PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		6N170A O-247 O-268 728B1 PDF

    6N170A

    Abstract: No abstract text available
    Text: Advance Technical Data IXGH 6N170A IXGT 6N170A High Voltage IGBT VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		6N170A O-247 728B1 6N170A PDF

    IXGH 6N170

    Abstract: 6N170 application notes IXGH 6N170 UPS SIEMENS
    Text: High Voltage IGBT IXGH 6N170 IXGT 6N170 VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ± 20 V VGEM Transient ± 30 V IC25 TC = 25°C 12 A IC90


    Original     		6N170 solder12 IXGH 6N170 6N170 application notes IXGH 6N170 UPS SIEMENS PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Technical Data High Voltage IGBT IXGH 6N170A IXGT 6N170A VCES IC25 VCE sat tfi(typ) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM Transient ±30 V


    Original     		6N170A 6N170A O-268 O-247 O-247hermal 728B1 PDF

    7N60B equivalent

    Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
    Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches


    Original     		MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 PDF

    50N60

    Abstract: 50N100 50n80 40N160 9N160G 50N6
    Text: BIMOSFET High Speed Types in 1400 und 1600 V ► New •e. A *C90 Tc = 25 °C Tc = 90 °C Gate drive V í-H < r o" 1 V CES V Type A □ ^1 tvp ns Package style 6 z Outlines on page 91-100 ri> G = Gate, E = Emitter, LL C = Collector thJC K/W T ,= 125 °C


    OCR Scan     		9N140G 15N140 20N140 40N140 9N160G 15N160 20N160 50N60 50N100 50n80 40N160 50N6 PDF