circuit diagram of car central lock system
Abstract: cts 10mhz oscillator ta4116 m16c tiny pwm control of tec PC14 4-20 ma to 16 bit ADC REJ09B0124-0200
Text: REJ09B0124-0200 M16C/6N Group 16 M16C/6NK, M16C/6NM Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 2.00
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REJ09B0124-0200
M16C/6N
M16C/6NK,
M16C/6NM)
16-BIT
M16C/60
circuit diagram of car central lock system
cts 10mhz oscillator
ta4116
m16c tiny
pwm control of tec
PC14
4-20 ma to 16 bit ADC
REJ09B0124-0200
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PC14
Abstract: 2ah 2037 philips ak 141-15
Text: REJ09B0126-0101Z M16C/6N Group 16 M16C/6NL, M16C/6NN Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01
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REJ09B0126-0101Z
M16C/6N
M16C/6NL,
M16C/6NN)
16-BIT
M16C/60
PC14
2ah 2037
philips ak 141-15
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TRANSISTOR BJ 131
Abstract: PC14 p088
Text: REJ09B0124-0101Z M16C/6N Group 16 M16C/6NK, M16C/6NM Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 1.01
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Original
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REJ09B0124-0101Z
M16C/6N
M16C/6NK,
M16C/6NM)
16-BIT
M16C/60
TRANSISTOR BJ 131
PC14
p088
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Untitled
Abstract: No abstract text available
Text: 689-6N Diodes Center-Tapped Negative CA HS Rectifier I(O) Max.(A) Output Current15 V(RRM)(V) Rep.Pk.Rev. Voltage600 t(rr) Max.(s) Rev.Rec. Time500n @I(F) (A) (Test Condition)1.0 @I(R) (A) (Test Condition)1.0 V(FM) Max.(V) Forward Voltage1.2 @I(FM) (A) (Test Condition)10
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689-6N
Current15
Voltage600
Time500n
Current10u
Current200u
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ic csc 2313 f
Abstract: No abstract text available
Text: REJ09B0009-0200Z 16 M16C/6N Group R8C/10 M16C/6N4 Group Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available.
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REJ09B0009-0200Z
M16C/6N
M16C/6N4)
R8C/10
16-BIT
M16C/60
100P6Q-A
ic csc 2313 f
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ic csc 2313 f
Abstract: cts 10mhz oscillator m16c tiny pwm control of tec PC14 msg fad
Text: REJ09B0126-0200 M16C/6N Group 16 M16C/6NL, M16C/6NN Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 2.00
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Original
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PDF
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REJ09B0126-0200
M16C/6N
M16C/6NL,
M16C/6NN)
16-BIT
M16C/60
ic csc 2313 f
cts 10mhz oscillator
m16c tiny
pwm control of tec
PC14
msg fad
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2240 TIMER
Abstract: 82c250 cts 10mhz oscillator m16c tiny pwm control of tec LN 358 n ic csc 2313 f
Text: REJ09B0009-0230 16 M16C/6N Group R8C/10 M16C/6N4 Group Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available.
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Original
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PDF
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REJ09B0009-0230
M16C/6N
M16C/6N4)
R8C/10
16-BIT
M16C/60
2240 TIMER
82c250
cts 10mhz oscillator
m16c tiny
pwm control of tec
LN 358 n
ic csc 2313 f
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circuit diagram of car central lock system
Abstract: cts 10mhz oscillator motor sm30 2240 TIMER 82C250 CAN Driver m16c tiny pwm control of tec
Text: REJ09B0011-0230 16 M16C/6N Group M16C/6N5 Hardware Manual RENESAS 16-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M16C/60 SERIES Before using this material, please visit our website to verify that this is the most updated document available. Rev. 2.30 Revision date: Oct. 24, 2005
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REJ09B0011-0230
M16C/6N
M16C/6N5)
16-BIT
M16C/60
circuit diagram of car central lock system
cts 10mhz oscillator
motor sm30
2240 TIMER
82C250 CAN Driver
m16c tiny
pwm control of tec
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EL 6N137
Abstract: F9136 f9-136 F 2.2K 302104 6N137 EL 6n137 303141
Text: Issued November 1988 F9136 Opto-isolators - 6N series Each of the opto-isolators described in this data sheet is a recognised industry-standard' device. Each type has its own place in circuit design for achieving solutions in the fields of isolation and coupling. All types are
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F9136
2500Vac
6N135,
6N136,
6N136)
10Mbit/s
6N137,
6N137)
6N138,
EL 6N137
F9136
f9-136
F 2.2K
302104
6N137 EL
6n137
303141
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DMF612
Abstract: DMF697 DMF651 DMF50374 DMF633 DMF6102 DMF690 DMF-612 VT52-TERMINAL DMF69
Text: EA 9710 12.97 RS-232 / RS-485 / CENTRONICS CONTROLLER FOR GRAPHIC MODULES FOR DIRECT CONNECTION TO BELOW LISTED GRAPHIC MODULES: EA 7160-7NEL EA 7240-6NEL EA 7240-7NEL EA 7320-7,9NC EA 7640-6N EA 7640-7,5N3C EA 7640-8,5NC EA 7640-8,8BWC3 EA 7720-8,5NEL 160
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RS-232
RS-485
7160-7NEL
7240-6NEL
7240-7NEL
7640-6N
160x100x20
VT-52
640x400
DMF612
DMF697
DMF651
DMF50374
DMF633
DMF6102
DMF690
DMF-612
VT52-TERMINAL
DMF69
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Untitled
Abstract: No abstract text available
Text: • 4 3 0 E!2 7 1 Q0SM3M0 TT? ■ HAS R FM 6N 45/6N 50 RFP6N 45/6N 50 H a r r is N-Channel Enhancement Mode Power Field Effect Transistors A u g u st 1991 Features Packages TO-204AA • 6A, 450V and 500V • rDS{on = 1 .2 5 0 • SOA is P ow er-D issipation Lim ited
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45/6N
O-204AA
O-220AB
O-204AA
TQ-220AB
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Untitled
Abstract: No abstract text available
Text: STP6NB25 STP6NB25FP N - CHANNEL 250V - 0.9Î2 - 6A - TO-220/TO-220FP PowerMESH MOSFET PRELIMINARY DATA TYPE STP 6N B25 S TP 6N B25FP • . . . . V dss RDS on Id 250 V 250 V < 1 .1 Q < 1 .1 Q 6 A 3.7 A TYPICAL R D S ( o n ) = 0.9 EXTREMELY HIGH dv/dt CAPABILITY
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STP6NB25
STP6NB25FP
O-220/TO-220FP
B25FP
STP6NB25/FP
O-22QFP
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STH6NA80FI
Abstract: sth6na80
Text: £ j ï SGS-THOMSON ULKgraMOeS STH6NA80 STH6NA80FI N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYP E V S TH 6N A80 S TH 6N A80FI • . . . . . . dss 800 V 800 V RDS on Id < 2 .4 Q. < 2 .4 Q. 5 .4 A 3 .4 A TYPICAL R D S (on) = 1.8 £2 ± 30V GATE TO SOURCE VOLTAGE RATING
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STH6NA80
STH6NA80FI
A80FI
STH6NA80FI
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Untitled
Abstract: No abstract text available
Text: ¿57 STH6N100 STH6N100FI SGS-THOMSON ¡mera « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E V S TH 6N 100 S TH 6N 100FI dss 1000 V 1000 V R DS on Id <20 <20 6 A 3 .7 A . TYPICAL RDs(on) = 1.75 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED
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STH6N100
STH6N100FI
100FI
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K2100
Abstract: STD6N10L
Text: S G S - T H O M S O N ¿ 5 S T D 6N 1 0 L ¡m e ra « 7 N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E S TD 6N 10L V dss RDS on Id 100 V < 0.4 5 C l 6 A • . ■ . . . ■ . TYPICAL RDS(on) = 0.4 Q. AVALANCHE RUGGED TECHNOLOGY
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STD6N10L
O-251)
O-252)
STD6N10L
O-252
0068772-B
K2100
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MTD6N08
Abstract: No abstract text available
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA M TD 6N 08 M TD 6N 10 Designer's Data Sheet P o w e r Field E ffe c t T ra n s is to r N-Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Surface M o u n t or Insertion M o u n t T M O S P O W E R FETs 6 AM PERES
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0JJ30
10QOS)
MTD6N08
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Untitled
Abstract: No abstract text available
Text: FMMV2101 to FMMV2109 SOT23 SILICON PLANAR VARIABLE CAPACITANCE DIODE PIN CONFIGURATION PARTMARKING DETAIL: FMMV2101 - 6R FMMV2102 - 6F FMMV2103 - 6G FMMV2104 - 6H FMMV2105 - 6J FMMV2106 - 6K FMMV2107 - 6L FMMV2108 - 6M FMMV2109 - 6N 1 1 T ABSOLUTE MAXIMUM RATINGS
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FMMV2101
FMMV2109
FMMV2101
FMMV2102
FMMV2103
FMMV2104
FMMV2105
FMMV2106
FMMV2107
FMMV2108
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P6N60
Abstract: p6n55 tp6n55 6N55 MTP6N55 TP6N60 SITH 6n55 data MTP6N6 power mosfet 6n60
Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet M T P 6N 55 M T P 6N 60 P o w e r Field E ffe ct T ra n sisto r N -Ch ann el Enhancem ent-M ode S ilic o n G ate T M O S These TM O S P ow er FETs are designed fo r h ig h voltag e , high speed p o w e r s w itc h in g a pp licatio n s such as sw itch in g regu la to rs,
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MTP6N55
P6N60
p6n55
tp6n55
6N55
TP6N60
SITH
6n55 data
MTP6N6
power mosfet 6n60
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6N137
Abstract: ML-120 transistor 6N137 Optocoupler EL 6N137 HP1900A HP19
Text: 5-53 LSTTL/TTL Compatible Optocoupler 6N 137 O ptoelectronic Products General Description The 6N137 optocoupler consists of a GaAsP lightem itting diode and an integrated circu it detector. Light is collected in the detector by the photodiode; then, it is am plified by a high-gain linear am plifier that drives a
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6N137
6N137
HP1900A
ML-120 transistor
6N137 Optocoupler
EL 6N137
HP19
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Untitled
Abstract: No abstract text available
Text: miltim PACKARD That HEW LETT Low Input Current, High Gain Optocouplers Technical Data 6N 139 HCPL-0701 HCNW139 6N138 HCPL-0700 HCNW138 Features Applications Description • High Current Transfer Ratio - 2000% Typical 4500% Typical for HCNW139/138 • Low Input Current
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HCPL-0701
HCNW139
6N138
HCPL-0700
HCNW138
HCNW139/138)
RS-232C
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Untitled
Abstract: No abstract text available
Text: M OTOROLA Order this document by MMDF6N03HD/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 6N 03H D Medium Power Surface Mount Products M otorola Preferred Device TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 30 VOLTS RDS on = 35
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MMDF6N03HD/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document through Power Products Marketing SEMICONDUCTOR TECHNICAL DATA Product Preview M M F T 6N 03H D HDTMOS Single N -C hannel Field E ffect Transistor Medium Power Surface Mount Products These medium power S O T -223 devices are an advanced series
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MMFT6N03HD/D
MMFT6N03HDD
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Untitled
Abstract: No abstract text available
Text: STW6NB90 N - CHANNEL 900V - 1,7Q - 6.3A - TO-247 PowerMESH MOSFET PRELIMINARY DATA TYPE V STW 6N B90 dss 900 V Id R D S o n <2 0. 6.3 A • TYPICAL RDS(on) = 1.7 £1 m EXTREMELY HIGH dv/dt CAPABILITY . 100% AVALANCHE TESTED . VERY LOW INTRINSIC CAPACITANCES
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STW6NB90
O-247
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Untitled
Abstract: No abstract text available
Text: T N 06C Çf Supertex me- Low Threshold / p \ N-Channel Enhancement-Mode M à / Vertical DMOS FETs Ordering Information Standard Commercial Devices b v dss/ t Order Number / Package ' d ON) ^G SIth) BVDGs (max) (min) (max) TO-39 TO-92 200V 6n 1.0A 1.6V TN0620N2
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TN0620N2
TN0624N2
TN0620N3
TN0624N3
O-220
TN0620N5
TN0624N5
TN0620ND
TN0624ND
TN06C
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