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    6C SMD TRANSISTOR DATA Search Results

    6C SMD TRANSISTOR DATA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    6C SMD TRANSISTOR DATA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor w1a

    Abstract: smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor
    Text: AntennaGuard 0402/0603 AVX Multilayer Ceramic Transient Voltage Suppressors ESD Protection for Antennas and Low Capacitor Loading Applications GENERAL DESCRIPTION RF antenna/RF amplifier protection against ESD events is a growing concern of RF circuit designers today, given the


    Original     		PDF CX-49G, CX-40F HC-49/U HC-49U-S 31-Dec-04 CX-49L smd transistor w1a smd transistor w1a 25 W1A smd transistor smd transistor gz smd transistor marking A14 SMD W1A transistor AVX tantalum marking MARKING w1a SOT-23 smd transistor w1a 50 marking code NJ SMD Transistor

    fire alarm using thermistor

    Abstract: NTC 15D principle of heat sensor with fan cooling 15d smd transistor ntc 100-9 VISHAY VDR PTC nonlinear resistors Circuit Protection Devices NTC Thermistors rate of rise heat detectors smd transistor 15d
    Text: V i s h ay I n t e r t e c h n o l o g y, I n c . P TC a nd NTC T he r mistor s, T hrough - Hole Va r istor s r e s i s t i v e p r o d uc t s Circuit Protection with Non-Linear Resistors capabilities w w w. v i s h a y. c o m Circuit Protection with Non-Linear Resistors


    Original     		PDF VMN-PL0436-1009 fire alarm using thermistor NTC 15D principle of heat sensor with fan cooling 15d smd transistor ntc 100-9 VISHAY VDR PTC nonlinear resistors Circuit Protection Devices NTC Thermistors rate of rise heat detectors smd transistor 15d

    FD-8 jack board

    Abstract: 8F SMD Transistor crystal 24.000 RCC-2184-ND FZT705TA transistor SMD 6b Y SMD Transistor WU2 MMBT3904LT1G smd transistor 8g smd transistor 6g
    Text: AN-1006 APPLICATION NOTE One Technology Way • P.O. Box 9106 • Norwood, MA 02062-9106, U.S.A. • Tel: 781.329.4700 • Fax: 781.461.3113 • www.analog.com Using the EVAL-ADUSB2EBZ by Brett Gildersleeve The ribbon cable and 10-pin header form a bridge to the target


    Original     		PDF AN-1006 10-pin standard56-I/ST ADG721BRMZ 24AA256-I/ST-ND CY7C68053-56BAXI FXLP34P5XCT-ND ADP1711AUJZ-1 ADP1711AUJZ-3 FD-8 jack board 8F SMD Transistor crystal 24.000 RCC-2184-ND FZT705TA transistor SMD 6b Y SMD Transistor WU2 MMBT3904LT1G smd transistor 8g smd transistor 6g

    PEMD18

    Abstract: PUMD18 PEMB18 PEMB1 PEMH18
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.


    Original     		PDF PEMH18; PUMH18 PEMH18 OT666 OT363 PEMD18 PEMB18 SC-88 PUMD18 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18

    SMD TRANSISTOR MARKING 6C

    Abstract: TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18
    Text: PEMH18; PUMH18 NPN/NPN resistor-equipped transistors; R1 = 4.7 k, R2 = 10 k Rev. 4 — 19 December 2011 Product data sheet 1. Product profile 1.1 General description NPN/NPN double Resistor-Equipped Transistors RET in Surface-Mounted Device (SMD) plastic packages.


    Original     		PDF PEMH18; PUMH18 PEMH18 OT666 OT363 PEMD18 PEMB18 SC-88 PUMD18 SMD TRANSISTOR MARKING 6C TRANSISTOR SMD MARKING CODE h5 smd marking T1 PEMD18 PUMD18 PEMB18 PEMB1 PEMH18

    17n80c3

    Abstract: 17n80c 17n80 Q67040-S4353 CTJ720 SPA17N80C3 schneider xb5avb3 SPB17N80C3 SPP17N80C3 SPA17
    Text: SPP17N80C3, SPB17N80C3 SPA17N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 220 • Ultra low gate charge P-TO220-3-31 VDS 800 V RDS(on) 0.29 Ω ID 17 A P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP17N80C3, SPB17N80C3 SPA17N80C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP17N80C3 17n80c3 17n80c 17n80 Q67040-S4353 CTJ720 SPA17N80C3 schneider xb5avb3 SPB17N80C3 SPP17N80C3 SPA17

    12N50C3

    Abstract: TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3
    Text: SPP12N50C3, SPI12N50C3 SPA12N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.38 Ω ID 11.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1 P-TO220-3-1


    Original     		PDF SPP12N50C3, SPI12N50C3 SPA12N50C3 P-TO220-3-31 P-TO262-3-1 P-TO220-3-1 P-TO-220-3-31: SPP12N50C3 12N50C3 TRANSISTOR 12N50C3 12N50c TRANSISTOR SMD MARKING CODE 7A SPA12N50C3 SPI12N50C3 SPP12N50C3

    04n50c3

    Abstract: SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SMD TRANSISTOR MARKING 6C SPA04N50C3 SPB04N50C3 04N50 SPP04N50C3 AN-TO220-3-31-01

    21n50c3

    Abstract: SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c
    Text: SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.19 Ω ID 21 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP21N50C3, SPB21N50C3 SPI21N50C3, SPA21N50C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 21n50c3 SPB21N50C3 21N50C P-TO220-3-31 Q67040-S4585 S4565 SPA21N50C3 SPI21N50C3 SPP21N50C3 SMD TRANSISTOR MARKING 6c

    04n50c3

    Abstract: SPA04N50C3
    Text: SPP04N50C3, SPB04N50C3 SPA04N50C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N50C3, SPB04N50C3 SPA04N50C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N50C3 04n50c3 SPA04N50C3

    04n60c3

    Abstract: Q67040-S4366
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 Q67040-S4366

    03N60C3

    Abstract: SMD Transistor g20 SPP03N60C3 SPA03N60C3 SPB03N60C3
    Text: SPP03N60C3, SPB03N60C3 SPA03N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 1.4 Ω ID 3.2 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP03N60C3, SPB03N60C3 SPA03N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP03N60C3 03N60C3 SMD Transistor g20 SPP03N60C3 SPA03N60C3 SPB03N60C3

    04n60c3

    Abstract: 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331
    Text: SPP04N60C3, SPB04N60C3 SPA04N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.95 Ω ID 4.5 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO263-3-2 P-TO220-3-1


    Original     		PDF SPP04N60C3, SPB04N60C3 SPA04N60C3 P-TO220-3-31 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: SPP04N60C3 04n60c3 04N60C3 equivalent smd transistor G18 04n60 04N60C SPB04N60C3 SPA04N60C3 SPP04N60C3 transistor C 331

    07N60C3

    Abstract: AN-TO220-3-31-01
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07N60C3 AN-TO220-3-31-01

    07n60c3

    Abstract: 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12
    Text: SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.6 Ω ID 7.3 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP07N60C3, SPB07N60C3 SPI07N60C3, SPA07N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 07n60c3 07n60c SPB07N60C3 SPA07N60C3 SPI07N60C3 SPP07N60C3 smd transistor marking G12

    20N60C3

    Abstract: 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 20N60C3 20N60C3 equivalent SPD06S60 sp*20n60c3 smd 20n60c3 SPB20N60C3 Q67040-S4550 S4550 spp20n60c3 SPI20N60C3

    20N60C3

    Abstract: Q67040-S4550
    Text: SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.19 Ω ID 20.7 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge P-TO220-3-31


    Original     		PDF SPP20N60C3, SPB20N60C3 SPI20N60C3, SPA20N60C3 P-TO-220-3-31: SPP20N60C3 SPI20N60C3 SPA20N60C3 P-TO220-3-31 20N60C3 Q67040-S4550

    11n60c3

    Abstract: transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60
    Text: SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.38 Ω ID 11 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1


    Original     		PDF SPP11N60C3, SPB11N60C3 SPI11N60C3, SPA11N60C3 P-TO220-3-31 P-TO262-3-1 P-TO263-3-2 P-TO220-3-1 P-TO-220-3-31: 11n60c3 transistor 11n60c3 11N60C SPB11N60C3 SPP11N60C3 Q67040-S4395 SPA11N60C3 SPI11N60C3 11N60

    sensor BPW34 application note

    Abstract: touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . G uide to Industr ial A pplic ations OPTOELECTRONICS OPTOELECTRONICS A PPL I CAT I O N S G U I D E w w w. v i s h a y. c o m OPTOELECTRONICS Guide to Industrial Applications Introduction As the world´s leading supplier of infrared emitters, photo detectors, and optical sensors,


    Original     		PDF VMN-MS6520-1012 sensor BPW34 application note touch sensitive siren using transistor tsop sensor Infrared sensor TSOP 1738 vo2223 vo3120 infrared signal transmission distance sensor BPW34 application note APPLICATION NOTE BpW34 BP104 application note

    DIN 58405

    Abstract: No abstract text available
    Text: ILD223T Vishay Semiconductors Optocoupler, Photodarlington Output, Dual Channel, SOIC-8 Package FEATURES • Two channel optocoupler • High current transfer ratio at IF = 1.0 mA, 500 % minimum A 1 8C • Isolation test voltage, 4000 VRMS C 2 7E A 3 6C • Electrical specifications similar to standard 6-pin


    Original     		PDF ILD223T i179042 ILD233T 11-Mar-11 DIN 58405

    SFH910

    Abstract: SFH9101 40s21 SFH9102 235L C100 9102 -18 8 pin
    Text: SFH 9101/9102 SIEMENS Light Reflection Switch in SMT Package Preliminary Data Dimensions in inches mm .165 (4.2) .149(3.8) .134 (3 .4). .118(3.0) ' .006 (0.15) .005 (0.13) 0 - .004 (0 -.1) Ï .244 (6.2) .228 (5.8) =^ • • • • Position reporting End position switch


    OCR Scan     		PDF SFH9101/9102 76K130 18-pln 023SbQS SFH910 SFH9101 40s21 SFH9102 235L C100 9102 -18 8 pin

    SMD 100 6n cap

    Abstract: smd transistor marking 6n SMD TRANSISTOR MARKING 6C
    Text: Wißt H E W L E T T mLfïM P A C K A R D Hermetically Sealed, High Speed, High CMR, Logic Gate Optocouplers 6N 134* 81028 HCPL-563X HCPL-663X Technical Data 5962-98001 HCPL-268K HCPL-665X 5962-90855 HCPL-560X :'See m atrix for available extensions. F eatu res


    OCR Scan     		PDF HCPL-563X HCPL-663X HCPL-268K HCPL-665X HCPL-560X MIL-PRF-38534 QML-38534, 6N137, HCPL-2601, HCPL2630/-31 SMD 100 6n cap smd transistor marking 6n SMD TRANSISTOR MARKING 6C

    book FOR D 1047

    Abstract: No abstract text available
    Text: SPP 80N03L SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage ^DS • Enhancement mode Drain-Source on-state resistance f î D S o n • Avalanche rated Continuous drain current b 30 V 0 .0 0 6 Q 80 A • Logic Level • dv/df rated


    OCR Scan     		PDF 80N03L SPP80N03L SPB80N03L P-T0220-3-1 Q67040-S4735-A2 P-T0263-3-2 Q67040-S4735-A3 S35bQ5 Q133777 SQT-89 book FOR D 1047

    smd Optocoupler 601

    Abstract: transistor smd xc 4E smd diode smd optocoupler 534 B550 transistor smd diode v6 58 KIA 6016 smd transistor va6 601 coupler Optocoupler 601
    Text: SIEMENS AKTIENGESELLSCHAF 47E D ÔEBSbDS 0027312 3 « S I E G SFH 6016 S IE M E N S 5.3 kV TRIOS* OPTOCOUPLER HIGH RELIABILITY Package Dim ensions mm — I 7.62 typ k 8,0fnin 8,4min-»4 2,54l -*-10.3m ax-^ 1< 2 < 3<E o ï> 6 Anode - 1 J> 5 Cathode - 2 ] > u not connected - 3


    OCR Scan     		PDF 23SbDS DG27312 Approval00 D02731b T-41-83 Ta-25Â range11 102mA smd Optocoupler 601 transistor smd xc 4E smd diode smd optocoupler 534 B550 transistor smd diode v6 58 KIA 6016 smd transistor va6 601 coupler Optocoupler 601