SPI11N60C3 |
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Infineon Technologies
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N-Channel MOSFETs (>500V - 900V); Package: PG-TO262-3; VDS (max): 600.0 V; Package: I2PAK (TO-262); RDS(ON) @ TJ=25°C VGS=10: 380.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; |
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SPI11N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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SPI11N60C3 |
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Infineon Technologies
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Cool MOS Power Transistor |
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SPI11N60C3HKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 600V 11A TO-262 |
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SPI11N60C3 SMD |
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Infineon Technologies
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CoolMOS Power MOSFET, 600V, TO-262, RDSon=0.38 ?, 11.0A |
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SPI11N60C3XKSA1 |
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Infineon Technologies
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 650V 11A TO-262 |
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