AD7651
Abstract: AD7652 AD7663 AD7665 AD7675 AD7676 AD7678
Text: 16-Bit 500 kSPS PulSARTM Unipolar ADC with Reference AD7652 FEATURES Throughput: 500 kSPS 16-bit resolution Analog input voltage range: 0 V to 2.5 V No pipeline delay Parallel and serial 5 V/3 V interface SPI /QSPITM/MICROWIRETM/DSP compatible Single 5 V supply operation
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16-Bit
AD7652
48-lead
ST-48
CP-48
AD7651
AD7652
AD7663
AD7665
AD7675
AD7676
AD7678
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DN25D
Abstract: pt100 sensors SENSYM AD7707 AD7707BR AD7707BRU AD780 EVAL-AD7707EB RU-20
Text: a 3 V/5 V, ؎10 V Input Range, 1 mW 3-Channel 16-Bit, Sigma-Delta ADC AD7707 FEATURES Charge Balancing ADC 16 Bits No Missing Codes 0.003% Nonlinearity High Level ؎10 V and Low Level (؎10 mV) Input Channels True Bipolar ؎100 mV Capability on Low Level Input
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16-Bit,
AD7707
20-Lead
AD7707
RU-20)
DN25D
pt100 sensors
SENSYM
AD7707BR
AD7707BRU
AD780
EVAL-AD7707EB
RU-20
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mu metal
Abstract: A1351 4 pin sip Hall Effect Current Measurements
Text: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output Features and Benefits Description • Pulse width modulated PWM output provides increased noise immunity compared to an analog output • 1 mm case thickness provides greater coupling for current
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A1351
mu metal
A1351
4 pin sip Hall Effect Current Measurements
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S4436
Abstract: 26T25 D 1556
Text: a 24-Bit ⌺-⌬ ADC AD1555/AD1556 PRELIMINARY TECHNICAL DATA FEATURES: GENERAL DESCRIPTION The AD1555 is a complete sigma-delta modulator, combined with a programmable gain amplifier intended for low frequency, high dynamic range measurement applications. The
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AD1555
56nVrms
AD1556
44-LEAD
S4436
26T25
D 1556
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a136* allegro
Abstract: No abstract text available
Text: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output This device is in production, however, it has been deemed Pre-End of Life. The product is approaching end of life. Within a minimum of 6 months, the device will enter its final, Last Time Buy, order phase.
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A1351
a136* allegro
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a1386
Abstract: s k A1386 A1384 "A1386" A1383 2X10 A1381 A1382 DWG-9013
Text: A1386 5 V Field-Programmable Linear Hall Effect Sensor IC with 3 V Supply Functionality, Analog Output, and Miniature Package Options Features and Benefits Description • Low power consumption using 3 V supply • Factory programmed sensitivity temperature coefficient
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A1386
a1386
s k A1386
A1384
"A1386"
A1383
2X10
A1381
A1382
DWG-9013
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A1351
Abstract: Hyperm49 linear displacement sensor ic eddy current displacement Sensor microsystems a1351 HyMu80 "Hall Effect Sensor" "Linear Hall-effect Sensor" hall sensor 4-pin bi pull up hall effect
Text: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output Features and Benefits Description • Pulse width modulated PWM output provides increased noise immunity compared to an analog output • 1 mm case thickness provides greater coupling for current
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A1351
A1351
Hyperm49
linear displacement sensor ic
eddy current displacement Sensor
microsystems a1351
HyMu80
"Hall Effect Sensor"
"Linear Hall-effect Sensor"
hall sensor 4-pin
bi pull up hall effect
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Untitled
Abstract: No abstract text available
Text: A1351 High Precision Linear Hall Effect Sensor IC with a Push/Pull, Pulse Width Modulated Output Discontinued Product This device is no longer in production. The device should not be purchased for new design applications. Samples are no longer available. Date of status change: April 30, 2012
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A1351
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ATS685LSH
Abstract: 72 gear tooth sensor ATS685 ATS685LSH-DS ATS685LSHTN-T
Text: ATS685LSH Two-Wire, Zero Speed Differential Gear Tooth Sensor IC Description Features and Benefits • Fully optimized differential digital gear tooth sensor IC • Running Mode Lockout • Unique algorithms for increased vibration immunity • AGC and reference adjust circuit
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ATS685LSH
ATS685LSH
72 gear tooth sensor
ATS685
ATS685LSH-DS
ATS685LSHTN-T
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Untitled
Abstract: No abstract text available
Text: 16-Bit 100 kSPS PulSAR Unipolar ADC with Reference AD7661 2.5 V internal reference: typical drift 3 ppm/°C Guaranteed max drift 15 ppm/°C Throughput: 100 kSPS INL: ±2.5 LSB max ±0.0038% of full scale 16-bit resolution with no missing codes S/(N+D): 88 dB min @ 20 kHz
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16-Bit
AD7661
48-lead
BRD22
ST-48
CP-48
CP-48
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Untitled
Abstract: No abstract text available
Text: VISHAY/DRALORIC R W R W E RW ./.ni RW. V i r e o u s Wirewound Resistors acc. to MIL-R-26 Limiting Voltage Resistance Range1> Volt ~ E12 + 10% E 24 ± 5% Adjustable Style Power Rating Watts at 40°C Ambient Resistance Range11 E12 E 24 + 10% ± 5% Non-Inductive Style
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MIL-R-26
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B2W03
Abstract: BZG04-8V2
Text: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers VOLTAGE REGULATOR DIODES LEADED BZD23 BZT03 B2W03 p 2 package Vz range11 V) P to. T .p r ZS M (W) (°C) (W) 3.6 to 270 7.5 to 270
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BZD23
BZT03
B2W03
BZD27
BZG03
BZD23-C7V5
BZT03-C7V5
BZW03-C7V5
BZD27-C7V5
BZG04-8V2
B2W03
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CY7C028-15AI
Abstract: WH15 CY7C027 CY7C028 CY7C037 CY7C038 IDT7027
Text: CY7C027/028 CY7C037/038 PRELIMINARY 32K/64K x 16/18 Dual-Port Static RAM Fully asynchronous operation Automatic power-down Expandable data bus to 32/36 bits or more using Mas ter/Slave chip select when using more than one device On-chip arbitration logic
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CY7C027/028
CY7C037/038
CY7C027)
CY7C028)
CY7C037)
CY7C038)
35-micron
32K/64K
CY7C028-15AI
WH15
CY7C027
CY7C028
CY7C037
CY7C038
IDT7027
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m3351
Abstract: KD 2114 marking code J2UT 1203 6d t201 CY7C1339 EQUIVALENT cd 1031 cs
Text: CY7C1339 128K x 32 Synchronous-Pipelined Cache RAM Features The CY7C1339 I/O pins can operate at either the 2.5V or the 3.3V level; the I/O pins are 3.3V tolerant when V DDq=2.5V. * Supports 100-MHz bus fo r Pentium and PowerPC operations w ith zero w ait states
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CY7C1339
100-MHz
166-MHz
133-MHz
CY7C1339
m3351
KD 2114
marking code J2UT
1203 6d
t201
EQUIVALENT cd 1031 cs
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MAV5
Abstract: No abstract text available
Text: fax id: 1084 ^ CY7C1334 PRELIMINARY 64Kx32 Pipelined SRAM with NoBL Architecture • Low 16.5 mW standby power Features • Pin compatible and functionally equivalent to ZBT™ device MT55L64L32P • Supports 133-MHz bus operations with zero wait states
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CY7C1334
64Kx32
MT55L64L32P
133-MHz
CY7C1334
MAV5
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Untitled
Abstract: No abstract text available
Text: V CYPRESS CY7C056V CY7C057V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Asynchronous Dual-Port Static RAM Features True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location 16K x 36 organization CY7C056V 32K x 36 organization (CY7C057V)
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CY7C056V
CY7C057V
16K/32K
FLEx36â
CY7C056V)
CY7C057V)
25-micron
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Untitled
Abstract: No abstract text available
Text: fax id: 5004 CY7B923 CY7B933 H O TLink T ra n sm itte r/R e ce ive d Features • • • • • • • • • • • • • • • • • twisted pair at data rates from 160 to 330 Mbits/second 400 Mbits/second for -400 devices). Figure 1 illustrates typical
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CY7B923
CY7B933
SMPTE-259M
8B/10B-coded
10-bit
400-Mbps
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FCT541C
Abstract: No abstract text available
Text: fax id: 7002 CY54/74FCT540T CY54/74FCT541T 8-Bit Buffers/Line Drivers Features Functional Description • F unction , p in o u t and d riv e c o m p a tib le w ith FCT and F lo g ic • FCT-C speed at 4.1 ns max. C o m ’ I FCT-A speed at 4.8 ns max. (C o m ’ I)
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CY54/74FCT540T
CY54/74FCT541T
FCT541C
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CY7024
Abstract: No abstract text available
Text: fax id: 5213 PRELIMINARY CY7C024V/025V/026V CY7C0241V/0251V/036V 3.3V 4K /8K /16K x 16/18 Dual-Port Static RAM Autom atic power-down Expandable data bus to 32/36 bits or more using Mas ter/Slave chip select when using more than one device On-chip arbitration logic
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CY7C024V/025V/026V
CY7C0241V/0251V/036V
4/8/16K
CY7C024V/025V/026V)
CY7C0241
CY7C036V)
35-micron
CY7024
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Untitled
Abstract: No abstract text available
Text: fax id: 5212 ^CYPRESS C Y 7 C 1 3 8 V /1 4 4 V /0 0 6 V /0 0 7 V PRELIMINARY C Y 7 C 1 3 9 V /1 4 5 V /0 1 6 V /0 1 7 V 3.3V 4K/8K/16K/32Kx 8/9 Dual-Port Static RAM A u to m atic p ow er-dow n Features E xp a n d ab le d ata bus to 1 6 /1 8 bits o r m o re using M as ter/
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4K/8K/16K/32Kx
64-pin
68-pinty
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Untitled
Abstract: No abstract text available
Text: PREUM INAm Ultra37128V UltraLogic 3.3V 128-Macrocell ISR™CLPD — tPD = 10 ns Features — ts = 5.5 ns • 128 macrocells in eight logic blocks • 3.3V In-System Reprogrammable™ ISR™ — tco = 6.5 ns — JTAG-compliant on-board programming — Design changes don’t cause pinout changes
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Ultra37128V
128-Macrocell
IEEE1149
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foto resistor
Abstract: No abstract text available
Text: fax id: 5017 CY7B9234 CY7B9334 SMPTE HOTLink Transmitter/Receiver bler/Framer Controller CY7C9335 completing the four piece chipset to transfer uncompressed SMPTE-259M encoded data over high-speed serial links (fiber, coax, and twisted pair). SMPTE HOTLink supports SMPTE-259M-BCD standard data
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CY7B9234
CY7B9334
SMPTE-259M-BCD
CY7C9235)
CY7C9335)
8B/10B-coded
10-bit
28-pin
foto resistor
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70V25
Abstract: CY7C0241 CY7C036AV IDT70V24 CY7C026AV-25AI CY7C025AV15
Text: W jÊ CY7C024AV/025AV/026AV CY7C0241 AV/0251 AV/036AV PRELIMINARY 3.3V 4K/8K/16K x 16/18 Dual-Port Static RAM Features • True dual-ported m em ory cells which allow sim ulta neous access of the same m em ory location • 4/8/16K x 16 organization CY7C024AV/025AV/026AV
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CY7C024AV/025AV/026AV
CY7C0241AV/0251AV/036AV
4K/8K/16K
4/8/16K
CY7C024AV/025AV/026AV)
CY7C0241
AV/0251
CY7C036AV)
35-micron
70V25
CY7C036AV
IDT70V24
CY7C026AV-25AI
CY7C025AV15
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b1l3
Abstract: CV7C136 CY7C1361V25 CY7C1363V25 CY7C1365V25 7C1361-133
Text: ^ _ 5r^ C Y P R F .S S CY7C1361V25 CY7C1363V25 CY7C1365V25 PBEUm m m 256K x36/256K x 32/512K x 18 Flowthrough SRAM Features • Supports 113-MHz bus operations • 256K x 36 / 256K x 32/512K x 18 common I/O » Fast clock-to-output times — 7.5 ns lor 117-MHz device
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CY7C1361V25
CY7C1363V25
CY7C1365V25
36/256K
32/512K
113-MHz
117-MHz
100-MHz
80-MHz
100-pin
b1l3
CV7C136
CY7C1361V25
CY7C1363V25
CY7C1365V25
7C1361-133
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