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    HY51V65403

    Abstract: HY51V65403HG Hyundai Semiconductor dram HY51V 65403HG
    Text: HY51V S 65403HG/HGL 16M x 4Bit EDO DRAM PRELIMINARY DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read operation. The advanced circuit and process allow this device to achieve high performance and low power dissipation. features are access time(45ns or 50ns) and refresh cycle(4K ref ) and power consumption (Normal


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    PDF HY51V 65403HG/HGL 64Mbit 400mil 32pin HY51V65403 HY51V65403HG Hyundai Semiconductor dram HY51V 65403HG

    k2835

    Abstract: HY51VS
    Text: HY51V S 65403HG(HGL) 16Mx4, 3.3V, 4K Ref, EDO DESCRIPTION This familiy is a 64Mbit dynamic RAM organized 16,777,216 x 4 bit configuration with Extended Data Out mode CMOS DRAMs. Extended data out mode is a kind of page mode which is useful for the read opera­


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    PDF HY51V 65403HG 16Mx4, 64Mbit 100us. 65403H 400mil 32pin I400mii k2835 HY51VS

    Untitled

    Abstract: No abstract text available
    Text: 2. PR O D U C T Q U IC K REFERENCE PRODUCT QUICK REFERENCE DRAM PART N U M BERIN G Cheong Ju GM 71 X X XX XX X X X X - PRO D U CT QUICK j REFERENCE Ü" XX P R E F IX O F C-Site M E M O R Y IC F A M IL Y 71 : D RA M S P E E D _ PRO CESS 5 : 50ns


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    PDF 8Mx72 7738280CTG A6V8730E18H 71V65800Cx9 HY51V 65803HG 71V64403C 71V65403C 65403HG

    edo ram 4Mx16

    Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
    Text: TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUICK REFERENCE DRAM Part Numbering g D RAM Module Part Numbering 12 D RAM Ordering Information 14 DRAM Module Ordering Information 15 3. DATA SHEETS DRAM 16M-bit GM 71C S 16400C(CL) 4Mx4, 5V, 4K Ref, FP


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    PDF 16M-bit 16400C 17400C 16403C 17403C 16400HG edo ram 4Mx16 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16