STTA806DI
Abstract: STTA806D
Text: STTA806D I TURBOSWITCH ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 8A VRRM 600V trr (typ) 25ns VF (max) 1.5V K A IF(AV) FEATURES AND BENEFITS A A SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.
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STTA806D
O220AC
STTA806D
STTA806DI
STTA806DI
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smps with uc3842 and tl431
Abstract: mc34063 step down with mosfet mc34063 step up with mosfet MC34063 MOSFET UC3842 step up converter mc34063 step down 5a mc34063 step up 5a MOSFET 1000v 30a uc3842 step down mc34063 triple output
Text: POWER SUPPLY EQUIPMENT STMicroelectronics SOLUTIONS Power Converter Block Diagram Mains Mains Rectification Conditioning Mains Rectification / Inrush Current Limitation Mains Conditioning Primary Secondary Primary Secondary RECOMMENDED DEVICES MAIN FEATURES
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BF3510TV
/BF3506TV
BHA/K3012TV
BTAxx600CW
AVS08
L6560/A
L6561
L4981A/B
ST90T40
/W/P/HxxNB50/60/80
smps with uc3842 and tl431
mc34063 step down with mosfet
mc34063 step up with mosfet
MC34063 MOSFET
UC3842 step up converter
mc34063 step down 5a
mc34063 step up 5a
MOSFET 1000v 30a
uc3842 step down
mc34063 triple output
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600v 10A ultra fast recovery diode
Abstract: HUR20100CT fast recovery diode 600v 12A HUR20120CT fast recovery diode 600v 5A
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
115oC;
180uH
10kHz;
25oCg.
600v 10A ultra fast recovery diode
HUR20100CT
fast recovery diode 600v 12A
HUR20120CT
fast recovery diode 600v 5A
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600v 10A ultra fast recovery diode
Abstract: HUR10100 HUR10120
Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G
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HUR10100,
HUR10120
O-220AC
HUR10100
600v 10A ultra fast recovery diode
HUR10100
HUR10120
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600v 10A ultra fast recovery diode
Abstract: fast recovery diode 600v 12A HUR20100CT 10A, 100v fast recovery diode 10a ultra fast diode HUR20120CT fast recovery diode 600v 5A ultra fast recovery time diode
Text: HUR20100CT, HUR20120CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR20100CT HUR20120CT Symbol VRRM V 1000 1200 Test Conditions IFRMS IFAVM
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HUR20100CT,
HUR20120CT
O-220AB
HUR20100CT
180uH
10kHz;
54Dynamic
600v 10A ultra fast recovery diode
fast recovery diode 600v 12A
HUR20100CT
10A, 100v fast recovery diode
10a ultra fast diode
HUR20120CT
fast recovery diode 600v 5A
ultra fast recovery time diode
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600v 10A ultra fast recovery diode
Abstract: sonic cleaner HUR10100 HUR10120 fast recovery diode 600v 5A 600v 10A ultra fast recovery diode to-220ac ultra fast recovery time diode
Text: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G
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HUR10100,
HUR10120
O-220AC
HUR10100
600v 10A ultra fast recovery diode
sonic cleaner
HUR10100
HUR10120
fast recovery diode 600v 5A
600v 10A ultra fast recovery diode to-220ac
ultra fast recovery time diode
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CM6805
Abstract: No abstract text available
Text: CMPFCD86 PFC Diode 8A/600V FEATURES Fast switching for high efficiency Low noise Trr ~ 25ns Ultra low reverse leakage current High voltage ultra faster diode PFC application High inrush current K A CMPFCD86 (TO-220AC) K MECHANICAL DATA
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CMPFCD86
A/600V)
O-220AC)
O-220FP)
O-252/DPAK)
O-220AC
O-220FP
CM6805
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Untitled
Abstract: No abstract text available
Text: APT11GF120KR G 1200V TYPICAL PERFORMANCE CURVES APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
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APT11GF120KR
APT11GF120KR
APT11GF120KRG*
O-220
20KHz
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APT11GF120KRG
Abstract: APT11GF120KR 600v 8A ultra fast recovery diode to220
Text: APT11GF120KR G 1200V TYPICAL PERFORMANCE CURVES APT11GF120KR APT11GF120KRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. FAST IGBT & FRED TO-220 The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch through technology, the Fast IGBT combined with an APT free wheeling Ultra Fast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed.
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APT11GF120KR
APT11GF120KR
APT11GF120KRG*
O-220
20KHz
APT11GF120KRG
600v 8A ultra fast recovery diode to220
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MOSFET 1000v 30a
Abstract: W210PIV400 mosfet 600V 100A MOSFET 1200v 30a MOSFET welding INVERTER welding inverter 100A UC3842 mosfet 600V 30A 1200v 30A to247 W210PIV STGW50N60
Text: WELDING STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Primary Secondary Inverter RECOMMENDED DEVICES MAIN FEATURES Mains BF3506TV / BF3510TV BHA/K3012TV MSSxx / MDSxx BTW68-xxx / BTW69-xxx Input Rect. Bridge - 600V/35A; 1000V/35A Input Rect. Bridge - 1200V/30A 3-ph.
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BF3506TV
BF3510TV
BHA/K3012TV
BTW68-xxx
BTW69-xxx
00V/35A;
000V/35A
200V/30A
L4981A/B
STP/U/W/Y/ExxNB50/60
MOSFET 1000v 30a
W210PIV400
mosfet 600V 100A
MOSFET 1200v 30a
MOSFET welding INVERTER
welding inverter 100A UC3842
mosfet 600V 30A
1200v 30A to247
W210PIV
STGW50N60
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stepper motor driver full bridge 6A
Abstract: mosfet 600V 20A 600v 30a IGBT 20NB50 PSO-36 igbt to220 Triac 3a 600v Motor Driver IC L293D L298N IGBT full bridge
Text: BRUSHLESS MOTOR DRIVE STMicroelectronics SOLUTIONS Mains Pre- Rectification Regulation Inverter Tacho/ Encoder Frequency Converter Servo Motor Drive Inverter Controller Tacho/ Encoder Inverter RECOMMENDED DEVICES MAIN FEATURES Mains Rectification BTW68/69 - xxx
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BTW68/69
BF3506TV
/10TV
BHA/K3012TV
0-55A
00V/35A
000V/35A
L4981A/B
STW/Y/ExNA60
STTAxx06
stepper motor driver full bridge 6A
mosfet 600V 20A
600v 30a IGBT
20NB50
PSO-36
igbt to220
Triac 3a 600v
Motor Driver IC L293D
L298N
IGBT full bridge
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f08s60sn
Abstract: TT2202 TT220 F08S f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
TT220
F08S
f08s60
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f08s60sn
Abstract: TT2202 2202L FFP08S60SNTU f08s60
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFP08S60SN is STEALTHTM IIrectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
f08s60sn
TT2202
2202L
FFP08S60SNTU
f08s60
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFP08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFP08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFP08S60SN
FFP08S60SN
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IRGB4060D
Abstract: IRF1010 CT4-15
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
O-220AB
IRGB4060D
IRF1010
CT4-15
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Untitled
Abstract: No abstract text available
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V IC = 8.0A, TC = 100°C Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C
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97073B
IRGB4060DPbF
O-220AB
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Untitled
Abstract: No abstract text available
Text: PD - 97073 IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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IRGB4060DPbF
IRF1010
O-220AB
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IRF1010
Abstract: 8A2021
Text: PD - 97073B IRGB4060DPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C VCES = 600V Features • • • • • • • • • • Low VCE on Trench IGBT Technology Low Switching Losses Maximum Junction temperature 175 °C 5µs SCSOA
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97073B
IRGB4060DPbF
IRF1010
O-220AB
IRF1010
8A2021
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Untitled
Abstract: No abstract text available
Text: STEALTHTM II Rectifier FFPF08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, rrt < 25ns @ IF = 8A • High Reverse Voltage and High Reliability The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
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Untitled
Abstract: No abstract text available
Text: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R860P2,
ISL9R860S3ST
ISL9R860S2
ISL9R860S3S
175oC
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f08s60sn
Abstract: diode 8a 600v ffpf08s60sn FFPF08S60SNTU
Text: STEALTHTM II Rectifier FFPF08S60SN tm Features 8A, 600V STEALTHTM II Rectifier • High Speed Switching, trr < 25ns @ IF = 8A The FFPF08S60SN is STEALTHTM II rectifier with soft recovery characteristics. It is silicon nitride passivated ion-implanted epitaxial planar construction.
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FFPF08S60SN
FFPF08S60SN
f08s60sn
diode 8a 600v
FFPF08S60SNTU
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TO254P1524X482
Abstract: ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST R860P2 TB334 600v 8A ultra fast recovery diode to220
Text: ISL9R860P2, ISL9R860S2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R860P2,
ISL9R860S2,
ISL9R860S3ST
ISL9R860S2
ISL9R860S3S
175oC
TO254P1524X482
ISL9R860P2
ISL9R860S3ST
R860P2
TB334
600v 8A ultra fast recovery diode to220
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R860P2
Abstract: TA49409 TO254P1524X482 ISL9R860P2 ISL9R860S2 ISL9R860S3S ISL9R860S3ST TB334 R860P
Text: ISL9R860P2, ISL9R860S3ST 8A, 600V Stealth Diode General Description Features The ISL9R860P2, ISL9R860S2 and ISL9R860S3S are Stealth™ diodes optimized for low loss performance in high frequency hard switched applications. The Stealth™ family exhibits low reverse recovery current
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ISL9R860P2,
ISL9R860S3ST
ISL9R860S2
ISL9R860S3S
R860P2
TA49409
TO254P1524X482
ISL9R860P2
ISL9R860S3ST
TB334
R860P
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HFA06TB60
Abstract: HFA08TB60 diode hfa08tb60 revers characteristic transistor revers characteristic ir 908c SL-2341 32
Text: PD-2.341 International \1QRIRectifier HEXFRED Provisional Data Sheet HFA08TB60 ULTRA FAST, SOFT RECOVERY DIODE Major Ratings and Characteristics Characteristics Features; Units Vr V r rm 600 V If a v 6 A trr (typ) 18 ns On- (typ) 65 Jrrm difrec)M/dt (tvoi
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OCR Scan
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HFA08TB60
HFA06TB60
00A/fiS
diode hfa08tb60
revers characteristic
transistor revers characteristic
ir 908c
SL-2341 32
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