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    600B2 Search Results

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    600B2 Price and Stock

    KOA Speer Electronics Inc RN73H1JTTD5600B25

    RES 560 OHM 0.1% 1/10W 0603
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    DigiKey RN73H1JTTD5600B25 Cut Tape 9,651 1
    • 1 $0.35
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    RN73H1JTTD5600B25 Digi-Reel 9,651 1
    • 1 $0.35
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    RN73H1JTTD5600B25 Reel 5,000 5,000
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    Mouser Electronics RN73H1JTTD5600B25 2,847
    • 1 $0.35
    • 10 $0.252
    • 100 $0.175
    • 1000 $0.116
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    KOA Speer Electronics Inc RN73R1ETTP5600B25

    RES 560 OHM 0.1% 1/16W 0402
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    DigiKey RN73R1ETTP5600B25 Cut Tape 8,886 1
    • 1 $0.22
    • 10 $0.156
    • 100 $0.1096
    • 1000 $0.07447
    • 10000 $0.05504
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    RN73R1ETTP5600B25 Digi-Reel 8,886 1
    • 1 $0.22
    • 10 $0.156
    • 100 $0.1096
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    TTI RN73R1ETTP5600B25 Reel 10,000 10,000
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    3M Interconnect 3600B-20-300

    MULTI-PAIR 20CON 28AWG BEIGE
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    DigiKey 3600B-20-300 1,200 300
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    3600B-20-300 Bulk 31 1
    • 1 $5.94
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    3600B-20-300 Bulk 7 1
    • 1 $148.4
    • 10 $94.437
    • 100 $75.55
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    TDK-Lambda Corporation RWS600B-24

    AC/DC CONVERTER 24V 600W
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    DigiKey RWS600B-24 Bulk 627 1
    • 1 $195.24
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    Mouser Electronics RWS600B-24 90
    • 1 $190.48
    • 10 $168.82
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    Newark RWS600B-24 Bulk 26 1
    • 1 $182.25
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    RS RWS600B-24 Bulk 81 15 Weeks 1
    • 1 $197.19
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    Onlinecomponents.com RWS600B-24 36
    • 1 $186.11
    • 10 $175.03
    • 100 $167.1
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    TME RWS600B-24 1
    • 1 $172.93
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    Chip One Stop RWS600B-24 Bulk 34
    • 1 $187
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    Master Electronics RWS600B-24 36
    • 1 $186.11
    • 10 $175.03
    • 100 $167.1
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    Neutron USA RWS600B-24 50
    • 1 $429.99
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    Sager RWS600B-24 50 1
    • 1 $182.25
    • 10 $148.67
    • 100 $143.21
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    3M Interconnect 3600B-26-100SF

    MULTI-PR 26CON28AWGBEI 100' FOOT
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    DigiKey 3600B-26-100SF 306 1
    • 1 $7.34
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    3600B-26-100SF 17 1
    • 1 $404.53
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    • 100 $318.8072
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    3600B-26-100SF Bulk 8 1
    • 1 $180.32
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    • 100 $85.2408
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    Find more 600B2 price and stock on Findchips.com

    600B2 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VE880

    Abstract: IPC-D-275 Le79252 thyristor regulator CPTC thermistors LE79242 schematic design for surge protector and electric TISP9110 K15 thermistor GR-1089-CORE
    Text: Protecting Legerity Subscriber Line Interface Circuits SLICs with Bourns TISP® Protector Products Version 1 Circuit Protection Solutions Written by Tim Ardley, Sr. Telecom Field Applications Engineer June 2006 Table of Contents Objective .1


    Original     		1M/TSP0606 VE880 IPC-D-275 Le79252 thyristor regulator CPTC thermistors LE79242 schematic design for surge protector and electric TISP9110 K15 thermistor GR-1089-CORE PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF6P9220H MRF6P9220HR3 PDF

    100B101JW

    Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to


    Original     		MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3 PDF

    tantulum capacitor

    Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 PDF

    A113

    Abstract: A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1 MRF6S9125NR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 A113 A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S9125 MRF6S9125NR1/NBR1. MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125MR1 PDF

    Nippon capacitors

    Abstract: Nippon chemi
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N PDF

    1AF1-16LG

    Abstract: 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1
    Text: fiber.book : sec07.fm Page 8 Thursday, June 22, 2000 11:40 AM 600A & 600B One Unit High Combination Shelves Features • Frame mountable – Reversible 23-inch 58.42 cm or 19-inch (48.26 cm) frame mounting brackets on 600A2 – Flush or recessed mounting brackets for 19-inch ETSI


    Original     		sec07 23-inch 19-inch 600A2 19-inch 600A1 1AF1-16LG 1AM1-12LG 183U1 1AF1-16LG 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1 PDF

    GPS52

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with


    Original     		MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125 GPS52 PDF

    865 RF transistor

    Abstract: transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 1, 11/2005 RF Power Field Effect Transistor N -Channel Enhancement-Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF6P9220H MRF6P9220HR3 865 RF transistor transistor z9 UT-141A-TP J707 NIPPON CAPACITORS zo 107 600B AN1955 JESD22-A114 MRF6P9220HR3 PDF

    J698

    Abstract: NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi
    Text: Document Number: MRF6P9220H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of


    Original     		MRF6P9220H MRF6P9220HR3 J698 NIPPON CAPACITORS A114 A115 AN1955 C101 JESD22 MRF6P9220HR3 Nippon chemi PDF

    NIPPON CAPACITORS

    Abstract: dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H MRF6P3300HR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance


    Original     		MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 NIPPON CAPACITORS dvbt tantulum capacitor A114 A115 AN1955 C101 JESD22 MRF6P3300H PDF

    C4532X5R1H475MT

    Abstract: 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 C4532X5R1H475MT 600B3 C4532X5R1H475M 200B A113 A114 A115 AN1955 C101 Z5C-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRF5S9080N Rev. 1, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier


    Original     		MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080NR1 PDF

    TO272

    Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		MRF6S9125 MRF6S9125NR1/NBR1. MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125MR1 TO272 A113 A114 A115 AN1955 C101 JESD22 MRF6S9125 MRF6S9125MBR1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SCHEMATICS COM PENSATION 10X INVERTER BLOCK DIAGRAM CURRENT LIMIT CIRCUIT 20X INVERTER ELECTRICAL SPECIFICATIONS-U nle ss o th e rw is e s p e c ifie d ± V q c = ± 15 V D C & + V h v = + 80 V D C , C|_ = 8 pf p ro b e c a p a c ita n c e


    OCR Scan     		PDF