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WeEn Semiconductor Co Ltd BTA412Y-600B,127 TRIAC 600V 12A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BTA412Y-600B,127	Tube	12,698		1	1 $1.13 10 $1.13 100 $1.13 1000 $0.44 10000 $0.44	Buy Now
Avnet Silica	BTA412Y-600B,127		6,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BTA412Y-600B,127			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BTA412Y-600B,127		793		1	1 - 10 - 100 - 1000 $1.04 10000 $1.04	Buy Now
WeEn Semiconductor Co Ltd BTA208-600B,127 TRIAC 600V 8A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BTA208-600B,127	Tube	6,000		1	1 $1.11 10 $1.11 100 $1.11 1000 $0.38204 10000 $0.32312	Buy Now
TME	BTA208-600B,127		966		1	1 $0.833 10 $0.833 100 $0.478 1000 $0.352 10000 $0.345	Buy Now
Avnet Silica	BTA208-600B,127		1,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	BTA208-600B,127		3,000	9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BTA208-600B,127		2,000		1	1 - 10 - 100 - 1000 $1.23 10000 $1.14	Buy Now
WeEn Semiconductor Co Ltd BTA416Y-600B,127 TRIAC 600V 16A TO220AB
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BTA416Y-600B,127	Tube	4,826		1	1 $1.44 10 $0.915 100 $1.44 1000 $0.45375 10000 $0.45375	Buy Now
Mouser Electronics	BTA416Y-600B,127		14,489			1 $0.85 10 $0.696 100 $0.541 1000 $0.453 10000 $0.411	Buy Now
Rochester Electronics	BTA416Y-600B,127		3,000		1	1 $0.5042 10 $0.5042 100 $0.4739 1000 $0.4286 10000 $0.4286	Buy Now
TME	BTA416Y-600B,127		711		1	1 $0.79 10 $0.707 100 $0.561 1000 $0.521 10000 $0.521	Buy Now
Avnet Silica	BTA416Y-600B,127			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now

EBV Elektronik	BTA416Y-600B,127			9 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BTA416Y-600B,127		785		1	1 - 10 - 100 - 1000 $1.01 10000 $1.01	Buy Now
WeEn Semiconductor Co Ltd BTA312B-600B,118 TRIAC 600V 12A D2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BTA312B-600B,118	Reel	4,000		800	1 - 10 - 100 - 1000 $0.45375 10000 $0.45375	Buy Now
	BTA312B-600B,118	Cut Tape	1,153		1	1 $1.8 10 $1.144 100 $1.8 1000 $1.8 10000 $1.8	Buy Now
Mouser Electronics	BTA312B-600B,118		4,281			1 $1.21 10 $0.998 100 $0.682 1000 $0.453 10000 $0.453	Buy Now
Newark	BTA312B-600B,118	Cut Tape	307		1	1 $1.25 10 $1.04 100 $0.818 1000 $0.733 10000 $0.733	Buy Now
Bristol Electronics	BTA312B-600B,118		2,400			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	BTA312B-600B,118		331		1	1 $0.872 10 $0.739 100 $0.573 1000 $0.44 10000 $0.399	Buy Now

EBV Elektronik	BTA312B-600B,118			9 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	BTA312B-600B,118		4,000		1	1 - 10 - 100 - 1000 $0.4856 10000 $0.4494	Buy Now
Eaton Bussmann NT08104F3600B1F NTC 0805 10K 1% 3600 B 1%
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NT08104F3600B1F	Cut Tape	3,438		1	1 $0.24 10 $0.24 100 $0.1471 1000 $0.12181 10000 $0.12181	Buy Now
	NT08104F3600B1F	Digi-Reel	3,438		1	1 $0.24 10 $0.24 100 $0.1471 1000 $0.12181 10000 $0.12181	Buy Now
Sager	NT08104F3600B1F				4,000	1 - 10 - 100 - 1000 - 10000 $0.0894	Buy Now

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600B1 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: PULSE SPECIALTY COMPONENTS Low Profile Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6 LP 16-1500B93 LP 16-3000B94	Original	10-250B23 10-600B1 10-1200B2 10-2400B89 10-4800B90 12-200B24 12-450B3 12-900B4 12-1900B91 12-3800B92	PDF
MPL-12-12 Abstract: 18650B 34-6B63 2025B LR680 Text: Series LP and MPL Power Transformers Low Profile Humbucking Plug-in Transformers Part Number LP 10-250B23 LP 10-600B1 LP 10-1200B2 LP 10-2400B89 LP 10-4800B90 LP 12-200B24 LP 12-450B3 LP 12-900B4 LP 12-1900B91 LP 12-3800B92 LP 16-150B25 LP 16-350B5 LP 16-700B6	Original	10-250B23 10-600B1 10-1200B2 10-2400B89 10-4800B90 12-200B24 12-450B3 12-900B4 12-1900B91 12-3800B92 MPL-12-12 18650B 34-6B63 2025B LR680	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6P9220H Rev. 0, 10/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P9220HR3 Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of	Original	MRF6P9220H MRF6P9220HR3	PDF
tantulum capacitor Abstract: 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6P3300H Rev. 0, 9/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF6P3300HR3 MRF6P3300HR5 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance	Original	MRF6P3300H MRF6P3300HR3 MRF6P3300HR5 MRF6P3300HR3 tantulum capacitor 8VSB NIPPON CAPACITORS datasheet dvbt transmitter dvbt transmitter ECE capacitor rf push pull mosfet power amplifier A114 Nippon chemi AN1955	PDF
A113 Abstract: A114 A115 C101 JESD22 MRF6S18060MBR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060 Rev. 2, 5/2006 Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1 A113 A114 A115 C101 JESD22 MRF6S18060MBR1	PDF
AD250 Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 0, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100N AD250	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1	PDF
A113 Abstract: A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1 MRF6S9125NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 1, 7/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with	Original	MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 A113 A114 A115 C101 JESD22 MRF6S9125 MRF6S9125MBR1	PDF
200a1 Abstract: No abstract text available Text: OSI SPLIT-CORE CURRENT TRANSFORMERS UL Now with n io Reco gnit FEATURES • • • LOW COST 0.5% Linearity Split-core AC Outputs 0.1A,1A, 5A, 0.333V, 1V, 5V INPUT AC AMPS 0-50 0-100 0-200 0-100 0-200 0-300 0-400 0-500 0-600 0-800 0-800 0-1000 0-1200 0-1200	Original	E134271 1000C- 1200C- 1200D- 1500C- 1500D- 2000D- 2500D- 50A-1 00A-1 200a1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 0, 6/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 Designed for broadband commercial and industrial applications with	Original	MRF6S9125 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125MR1	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF6S18060 Rev. 2, 5/2006 Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S18060 MRF6S18060NR1/NBR1. MRF6S18060MR1 MRF6S18060MBR1 MRF6S18060MR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125 Rev. 2, 2/2006 Replaced by MRF6S9125NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.	Original	MRF6S9125 MRF6S9125NR1/NBR1. MRF6S9125MR1 MRF6S9125MBR1 MRF6S9125MR1	PDF
K512 Abstract: KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band Text: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 0, September 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.	Original	MSC8154E MSC8154ERM EL516 0xCA800 K512 KRY 112 442 dual band XTS01 2.2 un 1950 adr transport book national semiconductor Broadcom cli debug powerpc pci bridge kry 112 42 KRY 112 75 dual band	PDF
Nippon capacitors Abstract: Nippon chemi Text: Freescale Semiconductor Technical Data Document Number: MRF6S9125N Rev. 3, 3/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S9125NR1 MRF6S9125NBR1 Designed for broadband commercial and industrial applications with	Original	MRF6S9125N MRF6S9125NR1 MRF6S9125NBR1 MRF6S9125N Nippon capacitors Nippon chemi	PDF

567 tone Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1 j327 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 2, 8/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 DataMRF7S19100N 567 tone A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 j327	PDF
NAND Flash Programmer with TSOP-48 adapter Abstract: INTEL Core i7 860 schematic diagram inverter lcd monitor fujitsu MB506 ULTRA HIGH FREQUENCY PRESCALER fujitsu LVDS vga MB89625R VHDL code simple calculator of lcd display JTag Emulator MB90F497 Millbrook BGA TBA 129-5 Text: Master Product Selector Guide February 2001 Fujitsu Microelectronics, Inc. Contents Introduction. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Application Specific ICs ASICs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3	Original		PDF
200a1 Abstract: 300B1 2500AA Text: OSI SPLIT-CORE CURRENT TRANSFORMERS h UL Now wit ion it Recogn FEATURES • • • APPLICATIONS 0-50 0-100 0-200 0-100 0-200 0-300 0-400 0-500 0-600 0-800 0-800 0-1000 0-1200 0-1200 0-1500 0-1500 0-2000 0-2500 • • • E134271 STANDARD OUTPUTS MODEL CTY0-0.1Aac*	Original	1000C- 1200C- 1200D- 1500C- 1500D- 2000D- 2500D- 50A-1 00A-1 200a1 300B1 2500AA	PDF
Untitled Abstract: No abstract text available Text: Document Number: MRF5S9080N Rev. 0, 3/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S9080NR1 MRF5S9080NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier	Original	MRF5S9080N MRF5S9080NR1 MRF5S9080NBR1 MRF5S9080N	PDF
wimax soc Abstract: MSC8154E KRY 112 442 dual band csr bc4 KRY 112 75 1 Transceiver Broadcom 3G RF KRY 112 75 1 dual band DDR3 DIMM 2SD 2581 schema electronic modem 3g made in china Text: MSC8154E Reference Manual Quad Core Digital Signal Processor with Security MSC8154ERM Rev 1, November 2010 How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc.	Original	MSC8154E MSC8154ERM EL516 0xCA800 wimax soc KRY 112 442 dual band csr bc4 KRY 112 75 1 Transceiver Broadcom 3G RF KRY 112 75 1 dual band DDR3 DIMM 2SD 2581 schema electronic modem 3g made in china	PDF
A113 Abstract: A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1 MRF6S18060NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S18060N Rev. 3, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18060NR1 MRF6S18060NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and	Original	MRF6S18060N MRF6S18060NR1 MRF6S18060NBR1 MRF6S18060NR1 A113 A114 A115 AN1955 C101 JESD22 MRF6S18060NBR1	PDF
1AF1-16LG Abstract: 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1 Text: fiber.book : sec07.fm Page 8 Thursday, June 22, 2000 11:40 AM 600A & 600B One Unit High Combination Shelves Features • Frame mountable – Reversible 23-inch 58.42 cm or 19-inch (48.26 cm) frame mounting brackets on 600A2 – Flush or recessed mounting brackets for 19-inch ETSI	Original	sec07 23-inch 19-inch 600A2 19-inch 600A1 1AF1-16LG 1AM1-12LG 183U1 1AF1-16LG 1AM1-12LG 183U1 600A2 600A1 12SC-EW 600B3 24LC SC st Duplex adapter 600B1	PDF
j378 Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1 MRF6S21100NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100N Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100NR1 MRF6S21100NBR1 Designed for W- CDMA base station applications with frequencies from 2110	Original	MRF6S21100N MRF6S21100NR1 MRF6S21100NBR1 MRF6S21100NR1 j378 A113 A114 A115 AN1955 C101 JESD22 MRF6S21100N MRF6S21100NBR1	PDF
j327 Abstract: A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1 MRF7S19100NR1 Text: Freescale Semiconductor Technical Data Document Number: MRF7S19100N Rev. 1, 6/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19100NR1 MRF7S19100NBR1 Designed for CDMA base station applications with frequencies from 1930 to	Original	MRF7S19100N MRF7S19100NR1 MRF7S19100NBR1 MRF7S19100NR1 j327 A113 A114 A115 AN1955 C101 JESD22 MRF7S19100NBR1	PDF
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S18100N Rev. 0, 12/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S18100NR1 MRF6S18100NBR1 Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA and	Original	MRF6S18100N MRF6S18100NR1 MRF6S18100NBR1 MRF6S18100N	PDF

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600B1 Search Results

600B1 Price and Stock

WeEn Semiconductor Co Ltd BTA412Y-600B,127

WeEn Semiconductor Co Ltd BTA208-600B,127

WeEn Semiconductor Co Ltd BTA416Y-600B,127

WeEn Semiconductor Co Ltd BTA312B-600B,118

Eaton Bussmann NT08104F3600B1F

600B1 Datasheets Context Search

Untitled

MPL-12-12

Untitled

tantulum capacitor

A113

AD250

A113

A113

200a1

Untitled

Untitled

Untitled

K512

Nippon capacitors

567 tone

NAND Flash Programmer with TSOP-48 adapter

200a1

Untitled

wimax soc

A113

1AF1-16LG

j378

j327

Untitled