BA142
Abstract: No abstract text available
Text: Target Information FLASH MEMORY K8Q2815UQB 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8Q2815UQB
128Mb
56TSOP)
similar90000h-097FFFh
088000h-08FFFFh
080000h-087FFFh
078000h-07FFFFh
070000h-077FFFh
068000h-06FFFFh
060000h-067FFFh
BA142
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K8P5516
Abstract: K8P5516UZB K8P5516UZB-P BA138 diode ba148 BA156 samsung nor flash 0004H 56TSOP serial flash 256Mb fast erase
Text: Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed
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K8P5516UZB
256Mb
56TSOP,
64FBGA,
K8P5516UZB-P
64-Ball
60Solder
K8P5516
K8P5516UZB
BA138 diode
ba148
BA156
samsung nor flash
0004H
56TSOP
serial flash 256Mb fast erase
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K8Q2815UQB
Abstract: BA142 K8P6415 k8q2815 K8P6415UQB BA169-BA172 sample code read and write flash memory K8Q2815UQ BA189-BA192 K8P2715UQB BA141
Text: K8Q2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification Dual Die Package 56TSOP (64Mb x 2) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K8Q2815UQB
128Mb
56TSOP)
56-PIN
50TYP
K8Q2815UQB
BA142
K8P6415
k8q2815
K8P6415UQB
BA169-BA172
sample code read and write flash memory K8Q2815UQ
BA189-BA192
K8P2715UQB
BA141
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Untitled
Abstract: No abstract text available
Text: MX29GL512F MX29GL512F DATASHEET P/N:PM1617 REV. 1.6, OCT. 30, 2013 1 MX29GL512F Contents FEATURES. 5
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MX29GL512F
PM1617
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KS32P6632
Abstract: NAND FLASH 64MB sample code read and write flash memory PCMCIA FLASH CARD 10MB TSOP 14X20 lexar cf 64mb controller Datasheet toshiba NAND Flash MLC vending machine source code pcmcia flash memory 8MB ata VG365
Text: Mass Storage Application Memory Product & Technology Division 2000.03.15 Product Planning & Application Engineering The Leader in Memory Technology ELECTRONICS Mass MassStorage StorageApplication ApplicationArea Area Flash Card Small Form Factor Card PCMCIA Card Form Factor
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056KB
KS32P6632
NAND FLASH 64MB
sample code read and write flash memory
PCMCIA FLASH CARD 10MB
TSOP 14X20
lexar cf 64mb controller
Datasheet toshiba NAND Flash MLC
vending machine source code
pcmcia flash memory 8MB ata
VG365
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56-PIN
Abstract: LH28F008SA LH28F016SA
Text: LH28F016SA FEATURES • • • • • • • 16M 1M x 16, 2M × 8 Flash Memory 56-PIN TSOP TOP VIEW User-Configurable x8 or x16 Operation User-Selectable 3.3 V or 5 V VCC 3/5 1 56 CE1 2 55 WE 70 ns Maximum Access Time NC 3 54 OE 0.43 MB/sec Write Transfer Rate
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LH28F016SA
56-PIN
LH28F008SA
J63428
SMT96112
LH28F008SA
LH28F016SA
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oki marking
Abstract: mr27v6452l
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27V6452L-002-03
MR27V6452L
304-word
16-bit
608-word
16-word
MR27V6452L-xxxMA
MR27V6452L-xxtem
oki marking
mr27v6452l
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mr27v12852l
Abstract: TSOP 56-P 56TSOP MR27V12852
Text: お客様各位 資料中の「沖電気」「ＯＫＩ」等名称の OKI セミコンダクタ株式会社への変更について 2008 年 10 月 1 日を以って沖電気工業株式会社の半導体事業は OKI セミコン ダクタ株式会社に承継されました。 従いまして、本資料中には「沖電気工業株
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FEDR27V12852L-002-01
MR27V12852L
608-word
16-bit/16
216-word
16-Bit
16-word
MR27V12852L-xxxTA
56-pin
56-P-1420-0
mr27v12852l
TSOP 56-P
56TSOP
MR27V12852
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MX29GL512
Abstract: MX29GL512E 00FF0001 29GL512 Q0-Q15 PM1524 mx29gl512e 70 MX29GL512EHMC-10Q MX29GL512EHT2I-10Q MX29GL512ELT2I-10Q
Text: MX29GL512E H/L MX29GL512E H/L DATASHEET P/N:PM1524 REV. 1.1, NOV. 22, 2010 1 MX29GL512E H/L SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • 2.7 to 3.6 volt for read, erase, and program operations • Byte/Word mode switchable - 67,108,864 x 8 / 33,554,432 x 16
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MX29GL512E
PM1524
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
MX29GL512
00FF0001
29GL512
Q0-Q15
PM1524
mx29gl512e 70
MX29GL512EHMC-10Q
MX29GL512EHT2I-10Q
MX29GL512ELT2I-10Q
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lh28f320bjd
Abstract: HI-LO SYSTEMS all11 LH28F320BJD-TTL LRS13A8 minato Model 1890A AF-9706 lh28f128bfht-pw LH28F128BFHED AF9706 AF9723
Text: November/1/2003 Programmer Support for SHARP Flash Memory * As regards the detailed product information of programmer vendors, please inquire at each vendor. SHARP takes no responsibility for products, services and assurances by programmer vendors. Please take notice that some of discontinued product are still shown in this document.
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November/1/2003
LH28F008BJ
LH28F008BJT-TTLxx
LH28F008BJT-BTLxx
40TSOP
LHF00L02
LHF00L03
lh28f320bjd
HI-LO SYSTEMS all11
LH28F320BJD-TTL
LRS13A8
minato Model 1890A
AF-9706
lh28f128bfht-pw
LH28F128BFHED
AF9706
AF9723
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K8P2815UQB
Abstract: No abstract text available
Text: K8P2815UQB FLASH MEMORY 128Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P2815UQB
128Mb
20000h-027FFFh
018000h-01FFFFh
010000h-017FFFh
008000h-00FFFFh
007000h-007FFFh
006000h-006FFFh
005000h-005FFFh
004000h-004FFFh
K8P2815UQB
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K9F8G08U0A-P
Abstract: K9F8G08U0A K9F8G08 k9wbg08 K9WBG K9F8G08U0 K9WB K9F8G08U K9F8G08U0A-PCB0 K9XXG08UXX-XCB0
Text: Advance FLASH MEMORY K9WBG08U5A K9F8G08U0A K9F8G08U0A INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K9WBG08U5A
K9F8G08U0A
100ns)
K9F8G08U0A-P
K9F8G08U0A
K9F8G08
k9wbg08
K9WBG
K9F8G08U0
K9WB
K9F8G08U
K9F8G08U0A-PCB0
K9XXG08UXX-XCB0
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Intel StrataFlash Memory j3
Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
Text: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads
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28F256J3,
28F128J3,
28F640J3,
28F320J3
x8/x16)
256Mbit
32-Byte
128-bit
--64-bit
Intel StrataFlash Memory j3
28F256J3
E28F640J3A-120
BGA 28F320J3
PC28F640J3
TE28F640J3C-115
vf bga
INTEL 28F320J3
RC28F128J3C-150
PC28F128J3C120
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AB-65
Abstract: E28F800B5 intel e28F400b5 44-PSOP 44PSOP 29219* intel
Text: E AB-65 APPLICATION BRIEF Migrating SmartVoltage Boot Block Flash Designs to Smart 5 Flash December 1997 Order Number: 292194-002 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions of
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AB-65
44-PSOP
40-TSOP
48-TSOP
56-TSOP
AB-65
E28F800B5
intel e28F400b5
44-PSOP
44PSOP
29219* intel
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Untitled
Abstract: No abstract text available
Text: FEDM27V6452R-002-01 Issue Date: Aug, 21, 2012 MR27V6452R 4M-Word 16-Bit or 8M-Word 8-Bit Page mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES • 4,194,304-word 16-bit/8,388,608-word 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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FEDM27V6452R-002-01
MR27V6452R
16-Bit
D15/A
304-word
16-bit/8
608-word
16-word
PDDC400807DC400758
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S29GL512P
Abstract: MX29GL512E S29GL512N mx29gl S29GL MX29GL512 Spansion S29GL512P Macronix s29gl512 S29GL512N datasheet
Text: APPLICATION NOTE Migrating to the Macronix MX29GL512E from Spansion S29GL512P N Memory Devices Contents Introduction. 2
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MX29GL512E
S29GL512P
S29GL512N
mx29gl
S29GL
MX29GL512
Spansion S29GL512P
Macronix
s29gl512
S29GL512N datasheet
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MX29GL256FLT2I-90Q
Abstract: MX29GL256FHT MX29GL256 MX29GL256FHT2I-90Q MX29GL256F MX29GL256FL MX29GL256FH 29GL256 MX29GL256FLXFI-90Q PM1544
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 0.02, OCT. 18, 2010 1 PRELIMINARY MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
PM1544
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FLT2I-90Q
MX29GL256FHT
MX29GL256
MX29GL256FHT2I-90Q
MX29GL256FL
MX29GL256FH
29GL256
MX29GL256FLXFI-90Q
PM1544
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Z04B
Abstract: MR27V6441L MARK Z04D MR27V6441L-xxxMP Z04D 48TSOP2 ST03
Text: OKI Semiconductor MR27V6441L PEDR27V6441L-02-03 Issue Date: April 4, 2005 Preliminary 64M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27V6441L is a 64 Mbit Production Programmed Read-Only Memory, which is configured as 67,108,864 word × 1-bit. The MR27V6441L supports a simple read operation using a single 3.3V power supply
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MR27V6441L
PEDR27V6441L-02-03
MR27V6441L
33MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
MR27V6441L-xxxMP
Z04D
48TSOP2
ST03
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K8P3215UQB
Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
Text: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
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K8P3215UQB
10MAX
48FBGA
48-PIN
1220F
047MAX
K8P3215UQB
K8P2815
K8p3215
K8P3215U
k8p2815u
K8P32
samsung nor flash
Samsung MCP
K8P6415
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Untitled
Abstract: No abstract text available
Text: FEDR27V6452L-002-03 Issue Date: Oct. 01, 2008 MR27V6452L 4M–Word x 16–Bit or 8M–Word × 8–Bit Page Mode P2ROM FEATURES • 4,194,304-word × 16-bit / 8,388,608-word × 8-bit electrically switchable configuration · Page size of 8-word x 16-Bit or 16-word x 8-Bit
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FEDR27V6452L-002-03
MR27V6452L
304-word
16-bit
608-word
16-word
MR27V6452L-xxxMA
MR27V6452L-xxxTN
MR27V6452L-xxxTA
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MX29GL256F
Abstract: MX29GL256FHT2I-90Q MX29GL256FLT2I-90Q TSOP 62 Package MX29GL256FLT2i
Text: MX29GL256F MX29GL256F DATASHEET P/N:PM1544 REV. 1.3, JAN. 12, 2012 1 MX29GL256F Contents FEATURES. 5
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MX29GL256F
MX29GL256F
PM1544
MX29GL256FHT2I-90Q
MX29GL256FLT2I-90Q
TSOP 62 Package
MX29GL256FLT2i
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MX29GL256FHT
Abstract: MX29GL256FH
Text: MX29GL256F MX29GL256F DATASHEET ADVANCED INFORMATION MX29GL256F SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES GENERAL FEATURES • Power Supply Operation - 2.7 to 3.6 volt for read, erase, and program operations - MX29GL256F H/L: VI/O=VCC=2.7V~3.6V, VI/O voltage must tight with VCC
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MX29GL256F
MX29GL256F
64KW/128KB
16-byte/8-word
64-byte/32-word
128-word
100mA
MX29GL256FHT
MX29GL256FH
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Z04B
Abstract: MARK Z04D
Text: FEDR27T1641L-02-H1 ＯＫＩ Semiconductor MR27T1641L This version : Feb.28, 2005 Previous version: -.- 8M x 1–Bit Serial Production Programmed ROM P2ROM GENERAL DESCRIPTION The MR27T1641L is a 16 Mbit Production Programmed Read-Only Memory, which is configured as
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FEDR27T1641L-02-H1
MR27T1641L
MR27T1641L
30MHz
20MHz
42SOJ
48BGA
28SOP
Z04B
MARK Z04D
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lh537
Abstract: 42DIP lh533200 LH535g
Text: MEMORIES • Mask ROMs Process CMOS ★ U n d e r development MEMORIES ★ Under developm ent Configuration Process Capacity (wortsxbits Access time (ns) MAX. Model No. Pinout LH-538VXX 100 100 5 ± 10% 32DIP/32SOP/32TSOPÎII) Normal 120 60 5 ± 10% L H 5 3 8 3 0 0 C D /C W C S Æ S H
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LH-538VXX
LH-5387XX
LH-538NXX
32DIP/32SOP/32TSOP
32DIP/32SOP/
32TSOP
42DIP/44SOP
48TSOP0)
lh537
42DIP
lh533200
LH535g
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