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Amphenol LTW Technology E-555555-FFFFFM-S001 CONN T-ADAPTER 5P-5P M-F INLINE
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DigiKey	E-555555-FFFFFM-S001	Bulk	34		1	1 $134.1 10 $104.586 100 $83.2915 1000 $83.2915 10000 $83.2915	Buy Now
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RS	E-555555-FFFFFM-S001	Bulk			10	1 - 10 $180.49 100 $180.49 1000 $180.49 10000 $180.49	Get Quote
Interstate Connecting Components	E-555555-FFFFFM-S001					1 - 10 - 100 $87.3 1000 $87.3 10000 $87.3	Buy Now
Amphenol LTW Technology H-555555-FFFFFM-S001 CONN T-ADAPTER 5P-5P M-F INLINE
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DigiKey	H-555555-FFFFFM-S001	Bulk	10		1	1 $42.05 10 $34.282 100 $28.225 1000 $28.225 10000 $28.225	Buy Now
Newark	H-555555-FFFFFM-S001	Bulk	34		1	1 $38.98 10 $28.66 100 $28.28 1000 $28.28 10000 $28.28	Buy Now
RS	H-555555-FFFFFM-S001	Bulk			10	1 - 10 $49.91 100 $49.91 1000 $49.91 10000 $49.91	Get Quote
TME	H-555555-FFFFFM-S001				10	1 - 10 $34.9 100 $34.9 1000 $34.9 10000 $34.9	Get Quote
Interstate Connecting Components	H-555555-FFFFFM-S001		300			1 $33.8441 10 $27.9065 100 $26.0766 1000 $26.0766 10000 $26.0766	Buy Now

Powell Electronics	H-555555-FFFFFM-S001		15		1	1 $81.56 10 $81.56 100 $57.09 1000 $47.25 10000 $44.91	Buy Now
Master Electronics	H-555555-FFFFFM-S001		180			1 $50.89 10 $49.37 100 $23.22 1000 $23.22 10000 $23.22	Buy Now
Amphenol LTW Technology AB-AD-555555-FFFFMF-Q001 CONN T-ADAPTER 5P-5P M-F INLINE
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DigiKey	AB-AD-555555-FFFFMF-Q001	Bag	8		1	1 $40.9 10 $33.341 100 $27.3788 1000 $27.3788 10000 $27.3788	Buy Now
Newark	AB-AD-555555-FFFFMF-Q001	Bulk	20		1	1 $10.43 10 $10.43 100 $10.43 1000 $10.43 10000 $10.43	Buy Now
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Amphenol LTW Technology S-555555-FFFFFM-S001 CONN T-ADAPTER 5P-5P M-F INLINE
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DigiKey	S-555555-FFFFFM-S001	Bulk	7		1	1 $63.18 10 $49.006 100 $38.7386 1000 $35.50904 10000 $35.50904	Buy Now
Newark	S-555555-FFFFFM-S001	Bulk			1	1 $44.02 10 $37.69 100 $31.96 1000 $31.47 10000 $31.47	Buy Now
RS	S-555555-FFFFFM-S001	Bulk			10	1 - 10 $62.5 100 $62.5 1000 $62.5 10000 $62.5	Get Quote
Interstate Connecting Components	S-555555-FFFFFM-S001					1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol LTW Technology P-555555-FFFFFM-S001 CONN T-ADAPTER 5P-5P M-F INLINE
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DigiKey	P-555555-FFFFFM-S001	Bulk	4		1	1 $48.36 10 $37.438 100 $29.5201 1000 $27.02764 10000 $27.02764	Buy Now
Newark	P-555555-FFFFFM-S001	Bulk	26		1	1 $30.78 10 $30.78 100 $26.67 1000 $26.67 10000 $26.67	Buy Now
RS	P-555555-FFFFFM-S001	Bulk			10	1 - 10 $46.42 100 $46.42 1000 $46.42 10000 $46.42	Get Quote
TME	P-555555-FFFFFM-S001				10	1 - 10 $33.6 100 $33.6 1000 $33.6 10000 $33.6	Get Quote
Interstate Connecting Components	P-555555-FFFFFM-S001		125			1 $32.6809 10 $26.9474 100 $25.1803 1000 $25.1803 10000 $25.1803	Buy Now

Master Electronics	P-555555-FFFFFM-S001		200			1 $47.32 10 $45.91 100 $21.59 1000 $21.59 10000 $21.59	Buy Now

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55FFFF Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CompactCellTM Static RAM Abstract: No abstract text available Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS	Original	Am45DL6408G 16-Bit) 8-Bit/512 73-Ball limitation02 CompactCellTM Static RAM	PDF
740-0007 Abstract: EN29GL064 6A000 Text: Preliminary EN29GL064 EN29GL064 64 Megabit 8192K x 8-bit / 4096K x 16-bit Flash Memory Page mode Flash Memory, CMOS 3.0 Volt-only FEATURES • Suspend and Resume commands for Program and Erase operations • Single power supply operation - Full voltage range: 2.7 to 3.6 volts read and	Original	EN29GL064 8192K 4096K 16-bit) 740-0007 EN29GL064 6A000	PDF
110R Abstract: S29GL128N Text: Am29LV6402M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL128N supersedes Am29LV6402M and is the factory-recommended migration path. Please refer to the S29GL128N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV6402M S29GL128N 110R	PDF
M29W640DB Abstract: M29W640D M29W640DT A0-A21 6A000 Text: M29W640DT M29W640DB 64 Mbit 8Mb x8 or 4Mb x16, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ACCESS TIME: 70, 90 ns	Original	M29W640DT M29W640DB TSOP48 TFBGA63 M29W640DB M29W640D M29W640DT A0-A21 6A000	PDF
M420000000 Abstract: FSB073 3FE00 Text: PRELIMINARY Am42DL640AG Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 16 Mbit (1 M x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features • Minimum 1 million write cycles guaranteed per sector	Original	Am42DL640AG 16-Bit) 73-Ball 5M-1994. M420000000 FSB073 3FE00	PDF
P-TFBGA63-0911-0 Abstract: BA102 PTFBGA-63 BA111 diode ba102 BA119 B641 BA95 BA112 Text: TC58FVT641/B641FT/XB-70,-10 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64-MBIT 8M x 8 BITS / 4M × 16 BITS CMOS FLASH MEMORY DESCRIPTION The TC58FVT641/B641 is a 67,108,864-bit, 3.0-V read-only electrically erasable and programmable flash memory	Original	TC58FVT641/B641FT/XB-70 64-MBIT TC58FVT641/B641 864-bit, BA102 BA103 BA110 BA111 P-TFBGA63-0911-0 BA102 PTFBGA-63 diode ba102 BA119 B641 BA95 BA112	PDF
LHF12F16 Abstract: wp 146 LH28F128BFHT-PTTL75A Text: PRODUCT SPECIFICATION Integrated Circuits Group LH28F128BFHT-PTTL75A Flash Memory 128M 8Mb x 16 (Model Number: LHF12F16) Spec. Issue Date: June 7, 2004 Spec No: FM046010 LHF12F16 • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	LH28F128BFHT-PTTL75A LHF12F16) FM046010 LHF12F16 LHF12F16 wp 146 LH28F128BFHT-PTTL75A	PDF
BA102 Abstract: diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96 Text: TH50VSF3680/3681AASB TENTATIVE TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS SRAM AND FLASH MEMORY MIXED MULTI-CHIP PACKAGE DESCRIPTION The TH50VSF3680/3681AASB is a mixed multi-chip package containing a 8,388,608-bit Full CMOS SRAM and a 67,108,864-bit flash memory. The CIOS and CIOF inputs can be used to select the optimal memory configuration.	Original	TH50VSF3680/3681AASB TH50VSF3680/3681AASB 608-bit 864-bit 69-pin 3/3681AASB XXXh/60h) BPA/60h) BA102 diode ba102 diode ba103 TH50VSF3680AASB A12F TH50VSF3681AASB BA41 BA96	PDF
M25PX64 Abstract: No abstract text available Text: M25PX64 64-Mbit, dual I/O, 4-Kbyte subsector erase, serial Flash memory with 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz maximum clock frequency ■ 2.7 V to 3.6 V single supply voltage ■ Dual input/output instructions resulting in an	Original	M25PX64 64-Mbit, 64-Kbyte 64-byte M25PX64	PDF
FTA073 Abstract: No abstract text available Text: Am50DL128BH Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and	Original	Am50DL128BH FTA073--73-Ball FTA073	PDF
Untitled Abstract: No abstract text available Text: M25P64 64 Mbit, Low Voltage, Serial Flash Memory With 50MHz SPI Bus Interface FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 64Mbit of Flash Memory 2.7 to 3.6V Single Supply Voltage SPI Bus Compatible Serial Interface 50MHz Clock Rate maximum	Original	M25P64 50MHz 64Mbit 512Kbit) 64Mbit) 2017h) 20-Year	PDF
Untitled Abstract: No abstract text available Text: M29DW640F 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Page Read mode – Page Width 8 Words	Original	M29DW640F TSOP48 24Mbit	PDF
A039h Abstract: 3A400 Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.	Original	16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400	PDF
4kw marking Abstract: No abstract text available Text: TM SPANSION MCP Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,	Original	F0307 4kw marking	PDF

Untitled Abstract: No abstract text available Text: ADVANCE INFORMATION Am29LV640MH/L 64 Megabit 4 M x 16-Bit/8 M x 8-Bit MirrorBit 3.0 Volt-only Uniform Sector Flash Memory with VersatileI/O Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Single power supply operation — 3 V for read, erase, and program operations	Original	Am29LV640MH/L 16-Bit/8 128-word/256-byte 8-word/16-byte TS056 TSR056 0004h 0001h	PDF
JESD97 Abstract: M29DW128F TSOP56 6C80 Text: M29DW128F 128 Mbit 16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block 3V supply Flash memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29DW128F TSOP56 32-Word 16Mbit 48Mbit 16Mbit TBGA64 JESD97 M29DW128F TSOP56 6C80	PDF
SA452 Abstract: SA336 SA424 120R S29GL512N SA487 EE8000 a78000a7ffff c58000c5ffff SA4871 Text: Am29LV2562M Data Sheet RETIRED PRODUCT This product has been retired and is not available for designs. For new and current designs, S29GL512N supersedes Am29LV2562M and is the factory-recommended migration path. Please refer to the S29GL512N Data Sheet for specifications and ordering information. Availability of this	Original	Am29LV2562M S29GL512N S29GL512N SA452 SA336 SA424 120R SA487 EE8000 a78000a7ffff c58000c5ffff SA4871	PDF
M29W128FL Abstract: Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56 Text: M29W128FH M29W128FL 128 Mbit 8Mb x 16 or 16Mb x 8, Page, Uniform Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7 to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ Asynchronous Random/Page Read	Original	M29W128FH M29W128FL Words/16 TSOP56 32-Word 64-Bytes) M29W128FL Memory Protection Devices M29W128FH JESD97 M29W128F TSOP56	PDF
pin configuration 1K variable resistor Abstract: EPC1441 EPC16 EPCS128 EPCS16 EPCS64 EPC8QC100 EPC8QC100 Pinout fpga JTAG Programmer Schematics ic 11105 circuits diagraM Text: Configuration Handbook Preliminary Information 101 Innovation Drive San Jose, CA 95134 www.altera.com Config-1.3 September 2007 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and	Original		PDF
S29JL064H Abstract: S29PL064J 29F400 flash Text: Am29DL640H Data Sheet RETIRED PRODUCT This product has been retired and is not recommended for designs. For new and current designs, S29JL064H for TSOP packages and S29PL064J (for FBGA packages) supersede AM29DL320H as the factory-recommended migration path. Please refer to each respective datasheets for specifications and ordering information. Availability of this document is retained for reference and historical	Original	Am29DL640H S29JL064H S29PL064J AM29DL320H S29JL064H S29PL064J 29F400 flash	PDF
BA102 Abstract: TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65 Text: TC58FVM6 T/B 2A (FT/XB) 65 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64MBIT (8M x 8 BITS/4M × 16 BITS) CMOS FLASH MEMORY DESCRIPTION The TC58FVM6T2A/B2A is a 67108864-bit, 3.0-V read-only electrically erasable and programmable flash memory organized as 8388608 × 8 bits or as 4194304 × 16 bits. The TC58FVM6T2A/B2A features commands for	Original	TC58FVM6 64MBIT TC58FVM6T2A/B2A 67108864-bit, BA102 TOSHIBA TC58 cmos memory -NAND TC58 TC58FVM6B2A TC58FVM6T2A TC58FVM6T2AFT65	PDF
EPCS16SI8N Abstract: EPCS128 EPCS64SI16N EPCS16 EPCS 16 soic EPCS4 EPCS64 h5800 pin information ep3c5 EPCS1SI8N CG-250 Text: 14. Serial Configuration Devices EPCS1, EPCS4, EPCS16, EPCS64, and EPCS128 Data Sheet C51014-3.1 Introduction The serial configuration devices provide the following features: • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1 Altera Corporation May 2008	Original	EPCS16, EPCS64, EPCS128) C51014-3 128-Mbit 16-pin EPCS64 EPCS16SI8N EPCS128 EPCS64SI16N EPCS16 EPCS 16 soic EPCS4 h5800 pin information ep3c5 EPCS1SI8N CG-250	PDF
LH28F128SPHTD-PTL12 Abstract: A223A Text: PRELIMINARY PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F128SPHTD-PTL12 Flash Memory 128M 8M x 16/16M × 8 (Model No.: LHF12P01) Spec No.: FM033006 Issue Date: March 18, 2003 sharp LHF12P01 Preliminary • Handle this document carefully for it contains material protected by international copyright law. Any reproduction,	Original	LH28F128SPHTD-PTL12 16/16M LHF12P01) FM033006 LHF12P01 LH28F128SPHTD-PTL12 A223A	PDF
4kw marking Abstract: MBM29DL640E Text: FUJITSU SEMICONDUCTOR DATA SHEET DS05-50211-2E Stacked MCP Multi-Chip Package FLASH MEMORY & SRAM CMOS 64M (x8/×16) FLASH MEMORY & 8M (×8/×16) STATIC RAM MB84VD23280EA-90/MB84VD23280EE-90 • FEATURES • Power supply voltage of 2.7 V to 3.3 V • High performance	Original	DS05-50211-2E MB84VD23280EA-90/MB84VD23280EE-90 101-ball 4kw marking MBM29DL640E	PDF

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Amphenol LTW Technology E-555555-FFFFFM-S001

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55FFFF Datasheets Context Search

CompactCellTM Static RAM

740-0007

110R

M29W640DB

M420000000

P-TFBGA63-0911-0

LHF12F16

BA102

M25PX64

FTA073

Untitled

Untitled

A039h

4kw marking

Untitled

JESD97

SA452

M29W128FL

pin configuration 1K variable resistor

S29JL064H

BA102

EPCS16SI8N

LH28F128SPHTD-PTL12

4kw marking