Motorola transistor smd marking codes
Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes
Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):
|
Original
|
PDF
|
|
54F219DLQB
Abstract: 54F219 54F219FLQB 54F219LLQB F189
Text: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 MN54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs
|
Original
|
PDF
|
MN54F219-X
64-BIT
16-word
54F219
54F219DLQB
54F219FLQB
54F219LLQB
M0002060
54F219DLQB
54F219
54F219FLQB
54F219LLQB
F189
|
64 CERAMIC LEADLESS CHIP CARRIER LCC
Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E
Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are
|
Original
|
PDF
|
74F219
64-Bit
16-word
64 CERAMIC LEADLESS CHIP CARRIER LCC
54F219DL
54F219FL
54F219LL
74F219
74F219PC
74F219SC
74F219SJ
F189
N16E
|
74act3301
Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA
Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):
|
Original
|
PDF
|
88961501HA
5962-8961501QXA
DS26F31ME/883
DS26F31MJ/883
DS26F31MW/883
5962-7802302M2A
5962-7802302MEA
5962-7802302MFA
DS26F32ME/883
DS26F32MJ/883
74act3301
scl4412
75307
equivalent CD4015
jm38510/05101
DISCO DFG840
JM38510/33903BEA
74lvc3245
JM38510/05101BCA
JM38510/34001BCA
|
FDC9268
Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP
Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are
|
Original
|
PDF
|
74F219
64-Bit
16-word
|
74F219
Abstract: 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E
Text: 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are
|
Original
|
PDF
|
74F219
64-Bit
16-word
74F219
54F219DL
54F219FL
54F219LL
74F219PC
74F219SC
74F219SJ
F189
N16E
|
Untitled
Abstract: No abstract text available
Text: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a
|
Original
|
PDF
|
54F219
74F219
74F219
64-Bit
SNOS173A
|
TSMC 0.18 um MOSfet
Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221
Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes
|
Original
|
PDF
|
QML-38535
MIL-PRF-38535
MIL-STD-790
MIL-STD-690
-581DSCC
QML-38535
TSMC 0.18 um MOSfet
M38510 10102BCA
IDT7204L
5962-8768401MQA
0.18um LDMOS TSMC
sl1053
TSMC 0.25Um LDMOS
UT63M125BB SMD
RTAX250S-CQ208
5962-04221
|
Untitled
Abstract: No abstract text available
Text: National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are
|
OCR Scan
|
PDF
|
54F/74F219
64-Bit
16-word
|
Untitled
Abstract: No abstract text available
Text: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are
|
OCR Scan
|
PDF
|
74F219
64-Bit
16-word
LUUJ13J
4JL5JL6JL7J18|
16-Lead
16-Lead
|
Untitled
Abstract: No abstract text available
Text: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are
|
OCR Scan
|
PDF
|
54F/74F219
64-Bit
16-word
L5D11PP
Q0flE33b
|
Untitled
Abstract: No abstract text available
Text: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/29/96 MN54F219—X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs
|
OCR Scan
|
PDF
|
MN54F219â
64-BIT
16-word
54F219
54F219DLQB
54F219FLQB
54F219LLQB
-55/100C
|
Untitled
Abstract: No abstract text available
Text: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are
|
OCR Scan
|
PDF
|
54F/74F219
64-Bit
16-word
|
