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Teledyne e2v 54F219LMQB STATIC RAM, 16 X 4, WITH 3-STATE OUTPUTS - Rail/Tube (Alt: 54F219LMQB)
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Avnet Americas	54F219LMQB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v	54F219LMQB			14 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v 54F219FMQB STATIC RAM, 16 X 4, WITH 3-STATE OUTPUTS - Rail/Tube (Alt: 54F219FMQB)
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Avnet Americas	54F219FMQB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v	54F219FMQB			14 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v 54F219DMQB STATIC RAM, 16 X 4, WITH 3-STATE OUTPUTS - Rail/Tube (Alt: 54F219DMQB)
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Avnet Americas	54F219DMQB	Tube			250	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Teledyne e2v	54F219DMQB			14 Weeks		1 - 10 - 100 - 1000 - 10000 -	Get Quote
National Semiconductor Corporation 54F219FLQB IC,SRAM,16X4,F-TTL,FP,16PIN,CERAMIC
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Quest Components	54F219FLQB		4			1 $50.262 10 $50.262 100 $50.262 1000 $50.262 10000 $50.262	Buy Now
Texas Instruments 54F219LLQB STANDARD SRAM; Temperature Grade: OTHER; No. of Terminals: 20; Package Code: QCCN; Package Shape: SQUARE; Package Style (Meter): CHIP CARRIER;
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Vyrian	54F219LLQB		490			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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54F219 Datasheets (14)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
54F219		National Semiconductor	64-Bit Random Access Memory with TRI-STATE Outputs		Original	PDF
54F219DL		National Semiconductor	64-Bit Random Access Memory with TRI-STATEE Outputs		Original	PDF
54F219DLQB		National Semiconductor	64-Bit Random Access Memory with TRI-STATE Outputs		Original	PDF
54F219DLQB		National Semiconductor			Original	PDF
54F219DM		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
54F219DMQB		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
54F219FL		National Semiconductor	64-Bit Random Access Memory with TRI-STATEE Outputs		Original	PDF
54F219FLQB		National Semiconductor			Original	PDF
54F219FMQB		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
54F219LL		National Semiconductor	64-Bit Random Access Memory with TRI-STATEE Outputs		Original	PDF
54F219LLQB		National Semiconductor	64-Bit Random Access Memory with TRI-STATE Outputs		Original	PDF
54F219LLQB		National Semiconductor			Original	PDF
54F219LMQB		National Semiconductor	64-Bit Random Access Memory with TRI-STATE Outputs		Original	PDF
54F219LMQB		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

54F219 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 54F219,74F219 54F219 74F219 64-Bit Random Access Memory with TRI-STATE RM Outputs Literature Number: SNOS173A 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a	Original	54F219 74F219 74F219 64-Bit SNOS173A	PDF
M38510 10102BCA Abstract: SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 2000 Listing GIDEP Nr: GIDEP Category: Issued: 01/24/2000 TRB Nr: Product ID (Description): Proposed Date of Change: Description of Change: Effect of Change:	Original	LM185BYH2 LM185BYH1 LM185E-1 LM185H-1 LM185WG-1 LM185H-2 M38510 10102BCA SCX6206 marking code E5 SMD ic jm38510/10101bga SCX6B48AIS SNJ54LS165J JM38510/30004bca JM38510/10102BCA JM38510/10102BIA 946DMQB	PDF
Motorola transistor smd marking codes Abstract: 7900801CA lm6482a 5962-8993001MIA replacement for 11c90 TRANSISTOR SMD MARKING CODE QA LM311 SMD JM38510/10305BEA LM714h Motorola semiconductor smd marking codes Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1998 Listing GIDEP Nr: GIDEP Category: Issued: 01/06/98 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):	Original		PDF
54F219DLQB Abstract: 54F219 54F219FLQB 54F219LLQB F189 Text: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs	Original	MN54F219-X 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB M0002060 54F219DLQB 54F219 54F219FLQB 54F219LLQB F189	PDF
64 CERAMIC LEADLESS CHIP CARRIER LCC Abstract: 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are	Original	74F219 64-Bit 16-word 64 CERAMIC LEADLESS CHIP CARRIER LCC 54F219DL 54F219FL 54F219LL 74F219 74F219PC 74F219SC 74F219SJ F189 N16E	PDF
74act3301 Abstract: scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA Text: N ENHANCED SOLUTIONS DESIGN/PROCESS CHANGE NOTIFICATION formerly Military & Aerospace Division PCN Nr: 1999 Listing GIDEP Nr: GIDEP Category: Issued: 01/05/99 TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following High Reliability product(s):	Original	88961501HA 5962-8961501QXA DS26F31ME/883 DS26F31MJ/883 DS26F31MW/883 5962-7802302M2A 5962-7802302MEA 5962-7802302MFA DS26F32ME/883 DS26F32MJ/883 74act3301 scl4412 75307 equivalent CD4015 jm38510/05101 DISCO DFG840 JM38510/33903BEA 74lvc3245 JM38510/05101BCA JM38510/34001BCA	PDF
FDC9268 Abstract: FSA2501M FSA2510 fsa2501 FSA2510M smd diode marking code TO3 FSA3130M TRANSISTOR SMD MARKING CODE QA lmc64841 CB0239W-MSP Text: N MILITARY / AEROSPACE DESIGN/PROCESS CHANGE NOTIFICATION PCN Nr: 1996 Listing GIDEP Nr: Issued: 23.12.96 GIDEP Category: TRB Nr: This is to advise you that a Design and/or Process Change will be made to the following MIL/AERO product s : Product ID (Description):	Original		PDF
Untitled Abstract: No abstract text available Text: 54F 74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array Address inputs are buffered to minimize loading and are fully decoded on-chip The outputs are	Original	74F219 64-Bit 16-word	PDF
74F219 Abstract: 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E Text: 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to minimize loading and are fully decoded on-chip. The outputs are	Original	74F219 64-Bit 16-word 74F219 54F219DL 54F219FL 54F219LL 74F219PC 74F219SC 74F219SJ F189 N16E	PDF
TSMC 0.18 um MOSfet Abstract: M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221 Text: DSCC Supplemental Information Sheet for Electronic QML-38535 Specification Details: Date: 9/2/2008 Specification: MIL-PRF-38535 Title: Advanced Microcircuits Federal Supply Class FSC : 5962 Conventional: No Specification contains quality assurance program: Yes	Original	QML-38535 MIL-PRF-38535 MIL-STD-790 MIL-STD-690 -581DSCC QML-38535 TSMC 0.18 um MOSfet M38510 10102BCA IDT7204L 5962-8768401MQA 0.18um LDMOS TSMC sl1053 TSMC 0.25Um LDMOS UT63M125BB SMD RTAX250S-CQ208 5962-04221	PDF
74F161 PC Abstract: 74F163PC 74f500 74f558 74F164PC 74F548PC 74F138d 74F547PC transistor f630 74F253DC Text: F a ir c h ild A d v a n c e d S c h o t t k y T L $ 3. HANDLING PRECAUTIONS FOR SEMICONDUCTOR COMPONENTS The follow ing handling precautions should be observed for oxide isolation, shallow junction processed parts, such as FAST or 100K ECL: 1. All Fairchild devices are shipped in conducting foam or anti	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The 'F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word	PDF
Untitled Abstract: No abstract text available Text: E M IC O N D U C T Q R r 74F219 64-Bit Random Access Memory with 3-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	74F219 64-Bit 16-word LUUJ13J 4JL5JL6JL7J18\| 16-Lead 16-Lead	PDF
Untitled Abstract: No abstract text available Text: 219 National Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE* Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word L5D11PP Q0flE33b	PDF

Untitled Abstract: No abstract text available Text: November 1994 Semiconductor 54F/74F219 64-Bit Random Access Memory with TRI-STATE Outputs General Description Features The ’F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs are buffered to mini mize loading and are fully decoded on-chip. The outputs are	OCR Scan	54F/74F219 64-Bit 16-word	PDF