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    54F219DLQB

    Abstract: 54F219 54F219FLQB 54F219LLQB F189
    Text: MICROCIRCUIT DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 10/13/97 Last Major Revision Date: 07/21/97 MN54F219-X REV 2A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs


    Original
    PDF MN54F219-X 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB M0002060 54F219DLQB 54F219 54F219FLQB 54F219LLQB F189

    Untitled

    Abstract: No abstract text available
    Text: Nationa l Semiconductor MILITARY DATA SHEET Original Creation Date: 03/29/96 Last Update Date: 07/30/96 Last Major Revision Date: 03/29/96 MN54F219—X REV 1A0 64-BIT RANDOM ACCESS MEMORY WITH TRI-STATE OUTPUTS General Description The F219 is a high-speed 64-bit RAM organized as a 16-word by 4-bit array. Address inputs


    OCR Scan
    PDF MN54F219â 64-BIT 16-word 54F219 54F219DLQB 54F219FLQB 54F219LLQB -55/100C