SUR50N03-09P
Abstract: No abstract text available
Text: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS
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SUR50N03-09P
O-252
SUR50N03-09P--E3
SUR50N03-09P-T4--E3
18-Jul-08
SUR50N03-09P
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SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
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SUU50N03-09P
O-251
SUU50N03-09P--E3
08-Apr-05
SUU50N03-09P
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SUD50N03-09P
Abstract: SUD50N03-09P-E3
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
11-Mar-11
SUD50N03-09P
SUD50N03-09P-E3
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers
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SUD50N03-09P
O-252
SUD50N03-09P
S-31272--Rev.
16-Jun-03
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SUD50N03-09P
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D TO-252
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SUD50N03-09P
O-252
SUD50N03-09P
S-31875--Rev.
15-Sep-03
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SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
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SUU50N03-09P
O-251
SUU50N03-09P--E3
Curre10
S-41696--Rev.
20-Sep-04
SUU50N03-09P
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SUD50N0309P
Abstract: SUD50N03-09P SUD50N03-09P-E3
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
18-Jul-08
SUD50N0309P
SUD50N03-09P
SUD50N03-09P-E3
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SUR50N03-09P
Abstract: 72181
Text: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS
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SUR50N03-09P
O-252
SUR50N03-09P--E3
SUR50N03-09P-T4--E3
Uni75
S-32694--Rev.
19-Jan-04
SUR50N03-09P
72181
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72181
Abstract: No abstract text available
Text: SUR50N03-09P Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS
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SUR50N03-09P
O-252
SUR50N03-09P--E3
SUR50N03-09P-T4--E3
08-Apr-05
72181
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Untitled
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
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Original
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SUU50N03-09P
O-251
S-31871--Rev.
15-Sep-03
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SUU50N03-09P
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters
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Original
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PDF
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SUU50N03-09P
O-251
SUU50N03-09P--E3
18-Jul-08
SUU50N03-09P
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P-E3
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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S-40573-Rev
Abstract: 40573
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P--E3
08-Apr-05
S-40573-Rev
40573
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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Original
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PDF
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SUD50N03-09P
O-252
SUD50N03-09P-E3
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: SUU50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side APPLICATIONS D DC/DC Converters D Synchronous Rectifiers
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Original
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PDF
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SUU50N03-09P
O-251
S-31871--Rev.
15-Sep-03
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S8079
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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Original
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P-E3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
S8079
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40573
Abstract: SUD50N03-09P S-40573-Rev
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.0095 @ VGS = 10 V 63b 0.014 @ VGS = 4.5 V 52b VDS (V) 30 D TrenchFETr Power MOSFET D Optimized for High- or Low-Side D 100% Rg Tested APPLICATIONS D DC/DC Converters
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SUD50N03-09P
O-252
SUD50N03-09P--E3
Avalanch75
S-40573--Rev.
29-Mar-04
40573
SUD50N03-09P
S-40573-Rev
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Untitled
Abstract: No abstract text available
Text: SUD50N03-09P Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY rDS(on) (Ω) ID (A)b 0.0095 at VGS = 10 V 63b 0.014 at VGS = 4.5 V 52b VDS (V) 30 • TrenchFET Power MOSFET • Optimized for High- or Low-Side • 100 % Rg Tested Available
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SUD50N03-09P
O-252
SUD50N03-09P
SUD50N03-09P-E3
08-Apr-05
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5A bridge rectifier
Abstract: semikron thyristor skt 45
Text: SKT 1400 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Capsule Thyristor Line Thyristor "*+ "*+4 "%*+ " 2>!!
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C-12B
52Btungselektronik
5A bridge rectifier
semikron thyristor skt 45
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10N03
Abstract: 06N03 14N03 04N03 VU02 VU020-10N03 12n03 16N03
Text: 4b E D i x • 4b f l b 52b 00012S 1 y s corp □IXYS b » I X Y -r * 7. V o * ‘ November 1991 Data Sheet No. 911002A Three-Phase Diode Rectifier Bridge VU020 FEATURES:_ Isolated Direct Copper Bond Base Plate Easy Chassis Mounting
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OCR Scan
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00012S
11002A
E72873M)
VU020
VU020-04N03
VU020-06N03
VU020-08N03
VU020-10N03
VU020-12N03
VU020-14N03
10N03
06N03
14N03
04N03
VU02
12n03
16N03
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D bbsa^ai DD3oa4a 52b Philips Sem iconductors Product Specification PowerM OS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope
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OCR Scan
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PDF
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OT223
BUK582-60A
OT223.
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BUK582-60A
Abstract: No abstract text available
Text: bTE T> m N AMER PHILIPS/DISCRETE 1^53^31 DD30flM2 52b • APX Philips Semiconductors Product Specification PowerMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mount
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OCR Scan
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PDF
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0G3Dfl42
BUK582-60A
OT223
bbS3131-
BUK582-60A
OT223.
35\im
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RT4762
Abstract: No abstract text available
Text: n ij SGS-THOMSON ^ 7 # a M tM jL iM tB M lg g _ S T 6 2 ï 52B 8-BIT MCUs WITH A/D CONVERTER, AND AUTO-RELOAD TIMER • 3.0 to 6.0V Supply Operating Range ■ 8 MHz Maximum Clock Frequency ■ -40 to +85°C Operating Temperature Range ■ Run, Wait and Stop Modes
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TL 1074 CT
Abstract: megamos 46 08 09 6 a 1712 mosfet IXTH20N55 25N50 f g megamos
Text: I X Y S IDE C0RP » 1 4L,âfc,52b 0000344 fl □ IX Y S M e ga M O S’“ FETs IXTH20N60, 55 IXTM20N60, 55 MAXIMUM RATINGS Sym. IXTH20N55 IXTM20N55 IXTH20N60 IXTM20N60 Drain-Source Voltage 1 Vd s s 550 600 Drain-Gate Voltage (R q s = 1-OMfl) (1) Vd g r
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IXTH20N55
IXTH20N60
IXTM20N55
IXTM20N60
00D0344
IXTH20N60,
IXTM20N60,
50-600V,
O-247
TL 1074 CT
megamos 46 08 09 6
a 1712 mosfet
25N50
f g megamos
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