MIL-R-83401
Abstract: No abstract text available
Text: VISHAY INTERTECH/ ELEK 34E t • miS232 00012S1 0 O V I S H DATA SHEET VPN-100 c A COMPANY Precision Hermetic SIP Resistor Networks OF VISHAY FOIL RESISTORS ▼ Models 1461,1462,1463, 1464 and 1466 VISHAY Precision Hermetic Resistor Networks are now available in SIP Single-ln-Line Pin configurations. Five
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G0012S<
VPN-100
500KQ)
MIL-R-83401.
MIL-R-83401
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10N03
Abstract: 06N03 14N03 04N03 VU02 VU020-10N03 12n03 16N03
Text: 4b E D i x • 4b f l b 52b 00012S 1 y s corp □IXYS b » I X Y -r * 7. V o * ‘ November 1991 Data Sheet No. 911002A Three-Phase Diode Rectifier Bridge VU020 FEATURES:_ Isolated Direct Copper Bond Base Plate Easy Chassis Mounting
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00012S
11002A
E72873M)
VU020
VU020-04N03
VU020-06N03
VU020-08N03
VU020-10N03
VU020-12N03
VU020-14N03
10N03
06N03
14N03
04N03
VU02
12n03
16N03
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150a gto
Abstract: CLD41 CLD41B CLD42 CLD42A CLD42B CLD41A K8060
Text: FASCO INDS/ SENISYS 4QE 34Ti73fl D 00012SÔ 7 EaSÈNI I B E EEia • ' T - t - t l ' JD I CLD41/CLD42 Series Silicon Planar Photodiodes 1r— 0.025 r*“ F e atu res C0.64J A b s o lu te M a x im u m R atin g s *1* T a = 25°C unless otherwise stated. Storage Temperature. -40°Ct0 +150,C
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CLD41/CLD42
00012SÃ
CLD41/42
CLD41)
CID42)
10mW/cm2.
CLD42
150a gto
CLD41
CLD41B
CLD42
CLD42A
CLD42B
CLD41A
K8060
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sCapacitor
Abstract: DELTA MODULATION ENCODER BS9450
Text: M X-CÔM INC 37E ]> • SbbOfil? 00012SS MX* QDAA, INC. pM 7 MflXC MX629 ß a ty 'r J ß y ä ffl MILITARY DELTA MODULATION CODEC FEATURES APPLICATIONS • • • • • • • Military Communications • Multiplexers, Switches & Phones MeetsMil-Std-188-113
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00012SS
MX629
MeetsMil-Std-188-113
MX629
Mil-Std-188-113,
BS9450.
BS9450
BS9450
sCapacitor
DELTA MODULATION ENCODER
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Untitled
Abstract: No abstract text available
Text: 10 Watt NT Series Featu res • Fully Self Contained, No External Parts Required for Operation ■ High Power Density, up to 11 Watts per Cubic Inch ■ Low and Specified Input/Output Capacitance ■ Efficiencies to 85% ■ Overcurrent Protected for Long, Reliable Operation
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UL1459
1500NT
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TME 57
Abstract: D02S D012 D031 EDI8M3264C
Text: ELECTRONIC DESIGNS I NC S1E D 32301m ü0012Sfa S7b B E L D ^ED I EDI8M3264C Electronic Design» tnc.a High Speed Two Megabit SRAM Module 64Kx32 Static RAM CMOS, High Speed Module T -V i6 - 2 3 -JY Features The EDI8M3264Cis a high speed 2megabit State RAM 64Kx32 bit CMOS Static
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000125b
EDI8M3264C
64Kx32
EDI8M3264C
64Kx4
oI8M3264C
3S30114
00012h0
EDI8U3264C
TME 57
D02S
D012
D031
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melec 1200
Abstract: LZ1232M lz1232 Quad TTL to MOS Driver
Text: SHARP E L E K / M ELEC D IV 15E 0 | a ü ü l ^ 4 ci 0 | 32-Unit High Voltage MOS 1C LZ1232M T -5 2 -1 3 -0 5 LZ1232M • 32-Unit High Voltage MOS IC Pin Cnnections Description The LZ1232M is a 32-unit high voltage MOS IC fabricated using an N-channel DSA MOS process.
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32-Unit
0Q124C1
LZ1232M
T-52-13-05
16-bit
melec 1200
lz1232
Quad TTL to MOS Driver
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Untitled
Abstract: No abstract text available
Text: FASCO INDS/ SENISYS 4 DE J> 34=1=1733 000155 b 3 SH SEN I ijjQ S I I CLD40 ru t* Silicon Planar Photodiode i DIMENSIONS ARE IN INCHES [M ILLIM ET ER S Features Absolute Maximum Ratings^1* Ta = 25°C unless otherwise stated.) • • • • • Storage +8S°C
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CLD40
Temperature11.
10mW/cma
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Untitled
Abstract: No abstract text available
Text: WSS 53223 SOLID-STATE RELAY SQUIB FIRING RELAY mM M M M M FEATURES • • • • • • Replaces Teledyne M33-2N Magnetic Coupling Fast Turn on Times 1000 VRMS Isolation Excellent Parametric Stability Power FET Output - Low On-state Resistance Load Current Pulses up to 100A
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M33-2N
MIL-R-28750.
bll2b40
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AK8406
Abstract: tri linear CCD signal detection circuit "peak hold" constant vol slo syn HS 50
Text: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8 bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference
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AK8406]
250mVp-p
15Vp-p
AK8406
fl3b35
AK8406
tri linear CCD
signal detection circuit "peak hold" constant vol
slo syn HS 50
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daic0
Abstract: No abstract text available
Text: RF2 . I '• © © T RF COMM , -QNB- © © © RF3 -GND- © © © 500 ¿ \ 50ft m S @ © -4 - -4 - DS0404 SP4T © À¿ \ À¿ \ ” ¿ \ ‘ ^ m son 1 0 ® 1 • Built-in TTL compatible driver • Unused ports terminated in 5Q ohms I I © -GND — 1 "1"
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DS0404
DS0404
daic0
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S18A
Abstract: No abstract text available
Text: 2N7218 2N7219 2N7221 2N7222 POWER MOSFET IN HERMETIC ISOLATED TO-254AA PACKAGE 100V Thru 500V, N-Channel Enhancement Mode, MOSFET Power Transistor FEATURES • Isolated Hermetic Metal Package • Fast Switching • Low RDS on • Ceramic Feedthroughs Available
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2N7218
2N7219
2N7221
2N7222
O-254AA
S18A
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Untitled
Abstract: No abstract text available
Text: SbE J> Dû7flti3b 0 0 0 1 2 5 1 öbD « A M T O P E Xs APEX M I C R 0 T E C H N 0 L 0 6 Y CORP 2 2 .5 W A TT D C -D C C O N VER TER DB2815S • DB2815SA A P EX M ICRO TECH N O LO G Y CO RPORATION • TU CSO N . ARIZONA » A P P LIC A TIO N S HO TLIN E 80 0 4 2 1 -1 8 6 5
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DB2815S
DB2815SA
AZ505901
254mm
127mm
DB2815S
254mm
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Untitled
Abstract: No abstract text available
Text: PERFORMANCE SE MI CONDUCTOR 20E D 70^25^7 000124b 7 P3C3198/P3C3198L SUPER FAST 16K X 4 STATIC CMOS RAMS SCRAMS 7$ FEATURES • Full CMOS, 6T Cell ■ Output Enable and Chip Enable Control Functions ■ Single 3.3V ± 0.2V Power Supply for High Speed with Low Noise and Low Power Dissipation
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000124b
P3C3198/P3C3198L
Active-12
Active-20
P3C3198L
28-Pin
MIL-STD-883C
P3C3198
-12PC
-12JC
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STM CL-70
Abstract: DI-149 ic laf 0001 laf 0001 equal A23 1101 01A laf 0001 power LD SOT 423 STS SOT t04 sot 23 U802A
Text: SOT-3 Device STM-1/STS-3/STS-3c Overhead Terminator TXC-03003B DATA SHEET Product Preview DESCRIPTION = The SOT-3 SDH/SONET overhead terminator is a pro grammable device that performs section, line and path overhead processing for STM-1/STS-3/STS-3c signals.
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TXC-03003B
TXC-05601,
TXC-21061,
OT-3/SYN155/ADMA-E1
SYN155
RS-232
TXC-03003b-mb
STM CL-70
DI-149
ic laf 0001
laf 0001 equal
A23 1101 01A
laf 0001 power
LD SOT 423
STS SOT
t04 sot 23
U802A
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Untitled
Abstract: No abstract text available
Text: NN51V4400B series Fast Page Mode CMOS 1M x4b it Dynamic RAM DESCRIPTION The NN51V4400B series is a high performance CMOS Dynamic Random Access Memory organized as 1,048,576 words by 4 bit. The NN51V4400B series is fabricated with advanced C M OS technology and designed with innovative de
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NN51V4400B
NN51V440QBL
V4400BXX
128ms
0QQ13Q4
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BL 176A
Abstract: No abstract text available
Text: ATMEL CORP HTE D • 1074177 0QD124S 0 ■ A T76C 176A T -S 2-& -& FEATURES • • • • • • • • Personal System/2*, 8514A, and VGA* Compatible High Pixel Rates to 110 MHz Supports High Resolution 1280 x 1280 Pixels Color Graphics Displays Low Standby Current Less than 100/<A PLCC Packages Only
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0QD124S
18-Bit
200mA
Desc-80JI
AT76C176A2-80JI
AT76C176A-110PC
AT76C176A1-110JC
AT76C176A2-110JC
AT76C176A
BL 176A
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Untitled
Abstract: No abstract text available
Text: [AK8406] ASAHI KASEI □ Input signal level: 250mVp-p~l. 15Yp-p □Processing speed : 5M sample/sec □Max. sensor length : 8184 □Sample hold and clump circuit included □8bit 2step flash ADC included •Contrast adjustment possible by 2x4bit DAC,which are volumesfor black reference
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AK8406]
250mVp-p
15Yp-p
AK8406
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Oak Technology
Abstract: PC111
Text: CHAPTER 10 ELECTRICAL DATA 10.1 D C SPECIFICATIONS 10.1.1 TA = 0° CTO 70° C, VDD = 5V +/- 5%, VSS = 0V Symbol Parameter Min Max Unit Condition V Ioh = 400 uA Voh Output High Voltage Voi Output Low Voltage 0.4 V lol = 24 mA 1,2 Vol Output Low Voltage 0.4
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256-pin
b72T405
Oak Technology
PC111
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Untitled
Abstract: No abstract text available
Text: [AK6480H] ASAHI KASEI A K 6 4 8 OH Wide Vcc 2.5V ~ 5.5V 8192bit Serial Electrically Erasable PROM Features □ ADVANCED CMOS E2PROM TECHNOLOGY □ READ/WRITE NON-VOLATILE MEMORY - Wide Vcc (25V ~ 5.5V) operation - 8192 bits: 512 X 16 organization □ ONE CHIP MICROCOMPUTER INTERFACE
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AK6480H]
8192bit
AK6480H
0007-E-00
CHfl3b35
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