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    QFN36-P-0606-0

    Abstract: TC32306FTG QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmiting and


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0 QFN36-P FC102 61012 b00111111 AUTOHD 5275S 5275u rf 315mhz

    LTS 543 seven segment display

    Abstract: seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration
    Text: TMS320C5x User’s Guide Literature Number: SPRU056D June 1998 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information


    Original     		PDF TMS320C5x SPRU056D Index-19 Index-20 LTS 543 seven segment display seven segment display LTS 543 7 segment display LTS 542 LTS 543 lts 543 series pin diagram lts 542 pin diagram 7 segment display 10 pin LTS 543 7 segment display LTS 543 bose 6201 lts 543 pin configuration

    samsung electronics ba41

    Abstract: BA175
    Text: Preliminary FLASH MEMORY K8C56 57 15ET(B)M 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H samsung electronics ba41 BA175

    06SEC

    Abstract: BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash
    Text: K8F56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 070000h-07FFFFh 060000h-06FFFFh 050000h-05FFFFh 040000h-04FFFFh 030000h-03FFFFh 020000h-02FFFFh 010000h-01FFFFh 00C000h-00FFFFh 06SEC BA213 16N10 BA167 BA184 15ET BA244 BA242 K8F5615ETM samsung nor flash

    BIOS manual

    Abstract: "USB Controller" DMA slave "2 endpoints" atmel 936 microchip pwm dma example 32 pin bios abstract on mini ups system circuit design atmel 936 usb bios chip 8 pin BIOS example delay source code BIOS example source code
    Text: BIOS User’s Manual Version 1.1 Cypress Semiconductor 3901 North First Street San Jose, CA 95134 Tel.: 800 858-1810 (toll-free in the U.S.) (408) 943-2600 www.cypress.com Cypress Disclaimer Agreement The information in this document is subject to change without notice and should not be construed as a commitment by Cypress Semiconductor Corporation Incorporated. While


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0

    Untitled

    Abstract: No abstract text available
    Text: TC32306FTG TOSHIBA CMOS Integrated Circuit Silicon Monolithic TC32306FTG Single-Chip RF Transceiver for Low-Power Systems 1. General Description The TC32306FTG is a single-chip RF transceiver, which provides many of the functions required for UHF-band transceiver applications. It has the most features transmitting


    Original     		PDF TC32306FTG TC32306FTG QFN36-P-0606-0

    Untitled

    Abstract: No abstract text available
    Text: K8C54 55 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		PDF K8C54 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H

    BA188

    Abstract: BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213
    Text: Rev. 1.0, Nov. 2010 K8S5615ETC 256Mb C-die NOR Flash 44FBGA, Muxed Burst, Multi Bank SLC 16M x16, 1.7V ~ 1.95V datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		PDF K8S5615ETC 256Mb 44FBGA, no180000h-018FFFFh 0170000h-017FFFFh 0160000h-016FFFFh 0150000h-015FFFFh 0140000h-014FFFFh 0130000h-013FFFFh 0120000h-012FFFFh BA188 BA255 BA242 BA138 BA234 BA205 BA238 BA251 BA188 co BA213

    BA251

    Abstract: 16N10
    Text: K8F56 57 15ET(B)M FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,


    Original     		PDF K8F56 256Mb 1A0000h-1AFFFFh 190000h-19FFFFh 180000h-18FFFFh 170000h-17FFFFh 160000h-16FFFFh 150000h-15FFFFh 140000h-14FFFFh 130000h-13FFFFh BA251 16N10

    BA95

    Abstract: 8A0000
    Text: K8C56 57 15ET(B)M NOR FLASH MEMORY 256Mb M-die MLC NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR


    Original     		PDF K8C56 256Mb A0-A23 000000FH 000001FH 000002FH 0000000H BA95 8A0000

    TC528257

    Abstract: n724
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS multiport m em ory equipped with a 262,144-w ords by 8 -bits dynam ic random access m em ory RAM port and a 512-words by 8 -bits static serial access m emory (SA M ) port. The


    OCR Scan     		PDF TC528257 144WORDS TC528257 144-w 512-words TC528257J/SZ/nVTR1017240 TC528257J/SZ/FT/TR-70 TC528257J/SZ/FT/TR-80 n724

    TC524258

    Abstract: TC524259BJ C69 WML dsf03
    Text: TOSHIBA TC524259B s il ic o n g a t e c m o s 262, 144WORDS X 4BITS MULTIPORT DRAM target DESCRIPTION The TC524259B is a CMOS multiport memory equipped with a 262,144-words by 4-bits dynamic random access memory RAM port and a 512-words by 4-bits static serial access memory (SAM) port. The TC524259B


    OCR Scan     		PDF 144WORDS TC524259B TC524259B 144-words 512-words TC524258B C-112 TC524258 TC524259BJ C69 WML dsf03

    dk qs

    Abstract: CLTO20
    Text: Am27S31 512 X 8 Bipolar PROM High Low High Fast • • • • programming yield current PNP inputs current and three-state outputs chip select GENERAL DESCRIPTION of satisfying the requirements of a variety of microprogrammable controls, mapping functions, code conversion,


    OCR Scan     		PDF Am27S31 512-words MIL-STD-883, dk qs CLTO20

    TC524258AZ

    Abstract: No abstract text available
    Text: TOSHIBA DIGITAL INTEGRATED CIRCUIT INTEGRATED CIRCUIT TC524258AJ/AZ-10 . TC524258AJ/ A Z-12 TO SHIBA TECHNICAL DATA SILICON GATE CMOS PRELIMINARY 262, 144W 0R D S X48ITS MULTIPORT DRAM DESCRIPTION The TC524253AJ/AZ is a CM OS multiport memory equipped with a 262,144-words by 4-bits


    OCR Scan     		PDF TC524258AJ/AZ-10 TC524258AJ/ X48ITS TC524253AJ/AZ 144-words 512-words TC524253AJ7 bein51 TC524253AJ TC524258AJ TC524258AZ

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM514252A 262,144-Word x 4-Bit Multiport DRAM DESCRIPTION The MSM514252A is a CMOS multiport memory composed of a 262,144-words by 4-bits dynamic random access memory, RAM port, and a 512-words by 4-bits static serial access memory, SAM


    OCR Scan     		PDF MSM514252 144-Word MSM514252A 144-words 512-words SQJ28-P-400-1 SQJ32-P-400-1

    Untitled

    Abstract: No abstract text available
    Text: OKI Sem iconductor MSM5416273 P relim inary 262,144 -Word x 16 Bits Multiport DRAM_ Rev.t.o GENERAL DESCRIPTION* The MSM5416273 is a 4-Mbit CMOS m ultiport DRAM composed of a 262,144-word by 16-bit dynamic RAM and a 512-words by 16-bits SAM. Its RAM and SAM operate independently and


    OCR Scan     		PDF MSM5416273 MSM5416273 144-word 16-bit 512-words 16-bits 2424D b7E4240

    tc528257

    Abstract: W640 SFC39 DIN 41162
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The


    OCR Scan     		PDF TC528257 144WORDS TC528257 144-words 512-words -84UUHEB-fl-B TC528257J/SZ/FT/TRâ TC528257J/SZ/FT/TR-70 W640 SFC39 DIN 41162

    Untitled

    Abstract: No abstract text available
    Text: MOSEL- VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4256 60 PRELIMINARY 80 10 70 ns 80 ns 100 ns 20 ns 25 ns 25 ns 40 ns 50 ns 70 Max. RAS Access Time, tp^c 60 ns Max. CAS Access Time, <tQAC) 15 ns Max. Column Address Access Time, (tAA)


    OCR Scan     		PDF V52C4256 V52C4256

    Toshiba TC528267J

    Abstract: TC528267J 1g17s TC528267 0027T11 D271S W1A01 STO511 TC528267FT
    Text: TOSHIBA SILICON GATE CMOS TC528267 t a r g e t s p e c 262,144WORDS x 8BITS MULTIPORT DRAM DESCRIPTION The TC528267 is a 2M bit CM OS m ultiport m emory equipped w ith a 262,144-w ords by 8-bits dynam ic random access mem ory RAM port and a 512-words by 8-bits static serial access m emory (SA M ) port. The


    OCR Scan     		PDF TC528267 144WORDS TC528267 144-words 512-words TC52B267J/ Z/n7TR-70 tC52S267J/SZ/FT/TR-M Toshiba TC528267J TC528267J 1g17s 0027T11 D271S W1A01 STO511 TC528267FT

    TC524258B

    Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
    Text: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B


    OCR Scan     		PDF TC524258B 144WORDS TC524258B 144-words 12-words TC524258BZ TC524258BJ TC524258 tc5242588

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC524162 TC524165 t a r g e t s il ic o n g a t e c m o s 262,144 WORDS x 16 BITS MULTIPORT DRAM DESCRIPTION The TC524162/I65 is a 4M bit CM OS multiport m em ory equipped with a 262,144-words by 16-bits dynam ic random access memory RAM port and a 512-words by 16-bits static serial access m em ory (SAM)


    OCR Scan     		PDF TC524162 TC524165 TC524162/I65 144-words 16-bits 512-words TC524162/165 C-352

    Untitled

    Abstract: No abstract text available
    Text: Am27S28/27S29 Am27S28/27S29 4,096-Bit 5 1 2 x 8 Bipolar PROM DISTINCTIVE CHARACTERISTICS • • • High Speed • Low-current PNP inputs Highly reliable, ultra-fast programming Platmum-Silicide • High-current open-collector and three-stat fuses • Fast chip select


    OCR Scan     		PDF Am27S28/27S29 096-Bit Am27S28/29 512-words Am27S28 Am27S29 MIL-STD-883,

    Untitled

    Abstract: No abstract text available
    Text: CHAPTER 4. 4.1 TENTATIVE PRODUCT SPECIFICATION MN1900 series lineup type # cycle time nsec MN1901 250 20 MN1902 250 20 3k/0 0/4k 66 QFP-84 100 125(100) 40(50) 3k/0 0/4k 66 QFP-84 200(300) 100 MN1902A clock (MHz) ROM (MI) RAM (MX) RAM (MY) Package (words)


    OCR Scan     		PDF MN1900 MN1901 MN1902 QFP-84 MN1902A MN1909 PGA-144 MN19011