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    512KX8 BIT LOW POWER CMOS STATIC RAM Search Results

    512KX8 BIT LOW POWER CMOS STATIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    512KX8 BIT LOW POWER CMOS STATIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM6 II

    Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
    Text: PRELIMINARY CMOS SRAM KM684000A Family 512Kx8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.4§- CMOS Organization : 512Kx8 Power Supply Voltage : Single 5V ¡¾ 10% Low Data Retention Voltage : 2V Min


    Original     		PDF KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 047MAX 002MIN KM6 II KM684000ALP-7 KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND

    K6T4008V1B-VF70

    Abstract: Improved MF10 32-TSOP2-R
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R

    KM68V4000BLG-7L

    Abstract: KM68V4000BLGI10L KM68V4000BL-L
    Text: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF KM68V4000B, KM68U4000B 512Kx8 047MAX 002MIN KM68V4000BLG-7L KM68V4000BLGI10L KM68V4000BL-L

    VF10

    Abstract: K6T4008V1B
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B VF10 K6T4008V1B

    K6X4008T1F

    Abstract: K6X4008T1F-B K6X4008T1F-F K6X4008T1F-Q K6X4008T1F-YF70 K6X4008T1F-GB70
    Text: Preliminary CMOS SRAM K6X4008T1F Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft July 29, 2002 Preliminary 0.1 Revised - Added 55ns product Vcc = 3.0V~3.6V


    Original     		PDF K6X4008T1F 512Kx8 K6X4008T1F-F K6X4008T1F-B K6X4008T1F-Q K6X4008T1F-YF70 K6X4008T1F-GB70

    K6X4008C1F

    Abstract: K6X4008C1F-GB70 K6X4008C1F-DF55 K6X4008C1F-VB55 K6X4008C1F-VF55 df70 K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q K6X4008C1F-DF70 DC
    Text: CMOS SRAM K6X4008C1F Family Document Title 512Kx8 bit Low Power full CMOS Static RAM Revision History Revision No. History Draft Date Remark 0.0 Initial draft July 30, 2002 Preliminary 0.1 Revised - Added Commercial Product. November 30, 2002 Preliminary 1.0


    Original     		PDF K6X4008C1F 512Kx8 32-SOP-525 047MAX 002MIN K6X4008C1F-GB70 K6X4008C1F-DF55 K6X4008C1F-VB55 K6X4008C1F-VF55 df70 K6X4008C1F-B K6X4008C1F-F K6X4008C1F-Q K6X4008C1F-DF70 DC

    K6X4008T1F-UF70

    Abstract: K6X4008T1F-UB70 K6X4008T1F-BF70 K6X4008T1F-LF70 K6X4008T1F-UF85 K6X4008T1F-UF7 K6X4008T1F-LF55 K6X4008T1FuF70 LF551 K6X4008T1F-LB70
    Text: K6X4008T1F Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft July 29, 2002 Preliminary 0.1 Revised - Added 55ns product Vcc = 3.0V~3.6V October 14, 2002


    Original     		PDF K6X4008T1F 512Kx8 K6X4008T1F-F K6X4008T1F-B 047MAX 002MIN K6X4008T1F-UF70 K6X4008T1F-UB70 K6X4008T1F-BF70 K6X4008T1F-LF70 K6X4008T1F-UF85 K6X4008T1F-UF7 K6X4008T1F-LF55 K6X4008T1FuF70 LF551 K6X4008T1F-LB70

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min


    OCR Scan     		PDF KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 47MAX

    KM68U4000CL-L

    Abstract: 3A3103
    Text: Advance KM68V4000C, KM68U4000C Family CMOS SRAM 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.35|jm CMOS • Organization : 512Kx8 • Power Supply Voltage KM68V4000C Family : 3.3±Q.3V KM68U4000C Family : 3.0±0.3V


    OCR Scan     		PDF KM68V4000C, KM68U4000C 512Kx8 512Kx8 KM68V4000C 32-SOP-S25, 32-TSDP2-400F/R 32-TSOP1-OB13 KM68U4000CL-L 3A3103

    7191B

    Abstract: No abstract text available
    Text: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V


    OCR Scan     		PDF KM68V4000B, KM68U4000B 512Kx8 512Kx8 KM68V4000B 32-SOP, 32-TSQP2-400F/R KM68V40008 7191B

    Untitled

    Abstract: No abstract text available
    Text: EDI8M32512C ^ E D I 1 ELECTRONC DGSIGN& N C 512Kx32 Static Ram 512KX32 CMOS, Low Power Static RAM Features The EDI8M32512C, a low power, high performance, 16 megabit density Static RAM organized as 512Kx32 bits, contains four 512Kx8 SRAMs. 512Kx32 bit CMOS Static


    OCR Scan     		PDF EDI8M32512C 512Kx32 100ns EDI8M32512C, 512Kx8 EDI8M32512LP70GB EDI8M32512LP85GB

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family CMOS SRAM 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx8 • Power Supply Voltage : Single 5V +/-10% • Low Data Retention Voltage : 2V Min • Three state output and TTL Compatible


    OCR Scan     		PDF KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP KM684000AL KM684000AL-L KM6840

    cs 308

    Abstract: KM68U4000A
    Text: KM68U4000A CMOS SRAM ELECTRONICS 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um CMOS • Organization : 512Kx 8 • Power Supply Voltage KM68V4000A Family : 3.3 +/- 0.3V KM68U4000A Family : 3.0 +/- 0.3V


    OCR Scan     		PDF KM68U4000A 512Kx8 512Kx KM68V4000A KM68U4000A 32-SOP, 32-TSOP cs 308

    Untitled

    Abstract: No abstract text available
    Text: KM68V4000A Family CMOS SRAM 512Kx8 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION >Process Technology : 0.4 um CMOS The >Organization : 512K x 8 SAMSUNG'S advanced CMOS process technology. KM68V4000A family is fabricated by >Power Supply Voltage : 3.3 +/- 0.3V


    OCR Scan     		PDF KM68V4000A 512Kx8 32-SOP, 32-TSOP KM68V4000AL KM68V4000AL-L

    Untitled

    Abstract: No abstract text available
    Text: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17th 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    OCR Scan     		PDF KM68V4000B, KM68U4000B 512Kx8

    KM68V4000AL-L

    Abstract: KM68U4000A lm68
    Text: KM68V4000A, KM68U4000A Family CMOS SRAM 512K x8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION . Process Technology : O .V n CMOS • Organization : 512Kx8 The KM68V400QA and KM68U4000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family


    OCR Scan     		PDF KM68V4000A, KM68U4000A 512Kx8 KM68V400QA 32-SOP-52S, 32-TSOP2-4 KM68V4000AL KM68V4000AL-L lm68

    Untitled

    Abstract: No abstract text available
    Text: ^EDI EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS 0.4" Wide DIP Module ; Features The ED18C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


    OCR Scan     		PDF EDI8C8512C 512Kx8 ED18C8512C 4096K 128Kx8 EDI8C8512C

    KM684000ALG-7L

    Abstract: KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L
    Text: KM684000A Family CMOS SRAM 512K x8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4nm CMOS • Organization: 512Kx8 • Power Supply Voltage: Single 5V±10% • Low Data Retention Voltage: 2V Min » Three state output and TTL Compatible


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP-600 32-SOP-525, 32-TSQP2-400F/R KM684Q00A KM684000ALG-7L KM684000ALT-5L km684000alg KM684000ALP-5L 32SOP KM684000ALP-5 KM684000ALP-7 KM684000ALP-7L

    Untitled

    Abstract: No abstract text available
    Text: WDi EDI8C8512C Electronic Designs Inc. Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


    OCR Scan     		PDF 512Kx8 EDI8C8512C EDI8C8512C 4096K 128Kx8 A0-A18 EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM

    EDI8C8512C35TM

    Abstract: EDI8C8512C45TM EDI8C8512C55TM
    Text: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed


    OCR Scan     		PDF 22EDI EDI8C8512C 512Kx8 EDI8C8512C 4096K 128Kx8 323D11M EDI8C8512C35TM EDI8C8512C45TM EDI8C8512C55TM

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L

    68U4000CL-L

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V4000C. KM68U4000C Family Document T ills 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial Draft January 13, 1998 Advance 0.1 Revisied June 12, 1998 Prelim inary


    OCR Scan     		PDF KM68V4000C. KM68U4000C 512Kx8 68U4000C 85/100ns 70/85/100ns 68U4000CL-L

    km684000blp-7l

    Abstract: km684000blp
    Text: Prem ilinary KM684000B Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP km684000blp-7l km684000blp

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)


    OCR Scan     		PDF KM684002B, KM684002BI 512Kx8 KM684Q02B 210mA KM684002B 205mA 200mA KM684002BJ