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    KM68V4000B Price and Stock

    Samsung Semiconductor KM68V4000BLTI-7L

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    Bristol Electronics KM68V4000BLTI-7L 479
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    Samsung Semiconductor KM68V4000BLT-7L

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    Quest Components KM68V4000BLT-7L 4
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    SEC KM68V4000BLT-7L

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    Quest Components KM68V4000BLT-7L 1
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    KM68V4000B Datasheets (14)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM68V4000BLG-10L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLG-7L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLG-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLGI-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLR-10L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLR-7L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLR-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLRI-10L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLRI-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLT-10L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLT-7L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLT-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLTI-10L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF
    KM68V4000BLTI-8L Samsung Electronics 512x8 bit Low Power and Low Voltage CMOS Static RAM Original PDF

    KM68V4000B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Remark Rev. 0.0 - 1′st edition - Package Dimension Finalized Feb. 4′th, 1997 Preliminary


    Original     		PDF KM68V4000BZ, KM68U4000BZ 512Kx8 48-CSP 55/Typ.

    SRAM_256KX16

    Abstract: KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F
    Text: KM616V4000B/C, KM616U4000B/C CMOS SRAM 256Kx16 bit Low Power and Low Voltage • Process Technology : TFT • Organisation : 256K x16 • Power Supply Voltage KM68V4000B/C Family : 3.0~3.6V KM68U4000B/C Family : 2.7~3.3V • Low Data Retention Voltage : 2V Min


    Original     		PDF KM616V4000B/C, KM616U4000B/C 256Kx16 KM68V4000B/C KM68U4000B/C 44-TSOP2-400F/R KM616V4000B/C SRAM_256KX16 KM616U4000B KM616U4000C CMOS Process Family SRAM256KX16 data retention TSOP2-400F

    KM68V4000BLG-7L

    Abstract: KM68V4000BLGI10L KM68V4000BL-L
    Text: KM68V4000B, KM68U4000B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF KM68V4000B, KM68U4000B 512Kx8 047MAX 002MIN KM68V4000BLG-7L KM68V4000BLGI10L KM68V4000BL-L

    K6T4008V1B-VF70

    Abstract: Improved MF10 32-TSOP2-R
    Text: K6T4008V1B, K6T4008U1B Family CMOS SRAM Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft December 17, 1996 Preliminary 1.0 Finalize - Change datasheet format - Erase low power part from product


    Original     		PDF K6T4008V1B, K6T4008U1B 512Kx8 KM68U4000B KM68V4000B K6T4008V1B KM68U4000B K6T4008U1B K6T4008V1B-VF70 Improved MF10 32-TSOP2-R

    KM616V4000BL-L

    Abstract: KM616U4000B
    Text: Back KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996


    Original     		PDF KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI KM616V4000BL-L

    KM616U4000BLTI-8L

    Abstract: KM616U4000B
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History Revision No. History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996


    Original     		PDF KM616V4000B, KM616U4000B 256Kx16 10/45mA KM616V4000BI, KM616U4000BI KM616U4000BLTI-8L

    14270x

    Abstract: 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 14270x 8107X m48t35 MK48T08 Zeropower M48Z35Y M48Z58 M48Z58Y AN1012 M48Z02

    BR1632 safety

    Abstract: BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety BR1632 BR1225X mk48t08 M48T59Y equivalent 8107X application note AN1012 m48t35 Zeropower AN1012

    br1632 br1225

    Abstract: No abstract text available
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 br1632 br1225

    K6T4016U3B

    Abstract: K6T4016V3B KM616U4000B
    Text: K6T4016V3B, K6T4016U3B Family CMOS SRAM Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM Revision History History Draft Data Remark 0.0 Initial draft June 28, 1996 Advance 0.1 Revise - Die name change ; A to B September 19, 1996 Preliminary


    Original     		PDF K6T4016V3B, K6T4016U3B 256Kx16 10/45mA KM616V4000BI, KM616U4000B KM616U4000BI K6T4016V3B

    BR1632 safety

    Abstract: mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12
    Text: AN1012 APPLICATION NOTE Predicting the Battery Life and Data Retention Period of NVRAMs INTRODUCTION Standard SRAM devices have the advantage, over EEPROM and Flash memory, of high write-speed when used as main memory for a processor or microcontroller. Their disadvantage is that they are volatile,


    Original     		PDF AN1012 BR1632 safety mk48t08 BR1632 CMOS GATE ARRAYs mitsubishi application note AN1012 m48t35 AN1012 M48Z02 M48Z08 M48Z12

    7191B

    Abstract: No abstract text available
    Text: CMOS smfñ KM68V4000B, KM68U4000B Family 512Kx8 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4 im CMOS • Organization: 512Kx8 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3 0±0.3V


    OCR Scan     		PDF KM68V4000B, KM68U4000B 512Kx8 512Kx8 KM68V4000B 32-SOP, 32-TSQP2-400F/R KM68V40008 7191B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM68V4000B, KM68U4000B Family CMOS SRAM 512Kx8 bit Low Pow er & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4pm CMOS T he K M 68V 4000B and K M 68U 4000B fam ily are • Organization : 512K x 8 fabricated by SAMSUNG’S advanced CM O S process


    OCR Scan     		PDF KM68V4000B, KM68U4000B 512Kx8 KM68V4000B 32-SOP, 32-TSOP 4000B

    Untitled

    Abstract: No abstract text available
    Text: Preliminary CMOS SRAM KM68V4000BZ, KM68U4000BZ Family Document Title 512Kx8 Low Voltage & Low Power SRAM Data Sheets for 48-CSP Revision History Rev. No. History Draft Data Rem ark Rev. 0.0 - 1 s t edition - Package Dimension Finalized Feb.4 th, 1997 Preliminary


    OCR Scan     		PDF KM68V4000BZ, KM68U4000BZ 512Kx8 48-CSP 55/Typ. 32/Typ. 25/Typ.

    KM616V4000BLTI-8L

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power and Low Voltage CMOS Static RAM FEATURES GENERAL DESCRIPTION • Process Technology : 0.4um CMOS • Organization: 256Kx16 • Power Supply Voltage KM68V4000B Family: 3.3±0.3V KM68U4000B Family : 3.0±0.3V


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 256Kx16 KM68V4000B KM68U4000B 44-TSOP2-4QOF/R KM616V4000B KM616V4000BLTI-8L

    Untitled

    Abstract: No abstract text available
    Text: K M 6 8 V 4 0 0 0 B , K M 6 8 U 4 0 0 0 B Fami l y CM OS SRAM P a c u r o e n ! Title 51 2 K x 8 bit L o w P o w e r and L o w Vo l t a g e C M O S Static R A M R e v is io n H a s ta r'y R e v is io n N o . H is to ry D ra ft D ata R e m a rk 0.0 Initial d ra ft


    OCR Scan     		PDF

    KM736V789T-60

    Abstract: 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L
    Text: MEMORY tCs FUNCTION GUIDE 1. SRAM PRODUCT TREE 1.1.1. Low Power 5.0V Operation SRAM 256Kb» 32KX8 KM62256CI-5/5L KM622S6CL-7/7L KM62256CLE -7/71 KM62256CLI-7/7L KM62256DL-5/5L KM62256DL-7/7L KM62256DLI-7/7L 512Kb» KM68512AL-5/5L 64Kx8 KM88512AL-7/7L KM68S»2ALf-7/7L


    OCR Scan     		PDF 256Kb» 32KX8 KM62256CI-5/5L KM62256CLE KM62256CLI-7/7L KM62256DL-5/5L KM62256DLI-7/7L 512Kb» 64Kx8 KM68512AL-5/5L KM736V789T-60 8AEL 65z7 KM68U512ALE-L KM736V689T-8 KM732V595AT KMB16 36SOJ KM68U4000A KM68V2000L-8L

    KM68U4000A

    Abstract: No abstract text available
    Text: KM616V4000B, KM616U4000B Family CMOS SRAM 256Kx16 bit Low Power & Low Vcc CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4|jm CMOS • Organization : 256Kx16 • Power Supply Voltage KM68V4000A Family : 3.3 ± 0.3V KM68U4000A Family : 3.0 ± 0.3V


    OCR Scan     		PDF KM616V4000B, KM616U4000B 256Kx16 256Kx16 KM68V4000A KM68U4000A 44-TSOP KM616V4000B 003b74c

    Untitled

    Abstract: No abstract text available
    Text: P re lim in a ry K M 6 8 V 4 0 0 0 B Z, K M 6 8 U 4 0 0 0 B Z Fami l y D o c u m C M O S SR A M æ n t TitSe 5 1 2 K x 8 L o w Voltage & Low Powe r SRAM Data Sheets for 48-CSP visio n H astory Rgy-No. History Draft Data Rev. 0.0 -1 's t edition -P a cka g e Dimension Finalized


    OCR Scan     		PDF 48-CSP

    KM736V789-60

    Abstract: 512k*8 sram KM68U4000A
    Text: TABLE OF CONTENTS I. FUNCTION GUIDE 1. Product Tree - 13 2. Product G uid e- 23 3. Ordering Information - 30 II.SRAM DATA SHEET Law Power SRAM 5.0V Operation 1. KM622S6C Family 32Kx8 Commercial, Extended, Industrial Products -


    OCR Scan     		PDF KM622S6C KM62256D KM68S12A KM68512B KM681OOOB 32Kx8 64KX8 128KX8 KM736V789-60 512k*8 sram KM68U4000A