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    Samsung Semiconductor KM684000CLG-5L

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    Samsung Semiconductor KM684002J-17

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    Quest Components KM684002J-17 20
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    SEC KM684000CLG-7L

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    Samsung Semiconductor KM684000ALG-7

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    Quest Components KM684000ALG-7 617
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    KM684000ALG-7 24
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    KM684000ALG-7 17
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    Samsung Semiconductor KM684000BLG-7L

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    Quest Components KM684000BLG-7L 12
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    KM6840 Datasheets (225)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    KM684000 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    KM684000 Samsung Electronics 524, 288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000 Samsung Electronics 524288 WORD x 8 BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000A Samsung Electronics 512K BY 8-BIT HIGH SPEED CMOS STATIC RAM Scan PDF
    KM684000AL Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG Samsung Electronics KM684000ALG 512K x 8 Bit Low Power CMOS Static RAM, Organization = 512K x 8, Vcc(V) = 4.5~5.5, Speed-tAA(ns) = 55,70, Operating Temperature = C,i, Operating Current(mA) = 90, Standby Current(uA) = 100/20, Package = 32DIP,32SOP,32TSOP2 Original PDF
    KM684000ALG-5 Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG-5 Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG-5L Samsung Electronics 55ns, 512K x 8 bit low low power CMOS static RAM Original PDF
    KM684000ALG-5L Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG-7 Samsung Electronics 70ns, 512K x 8 bit low power CMOS static RAM Original PDF
    KM684000ALG-7 Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG-7L Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALG-7L Samsung Electronics 70ns, 512K x 8 bit low low power CMOS static RAM Original PDF
    KM684000ALGI-7 Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALGI-7 Samsung Electronics 70ns, 512K x 8 bit low power CMOS static RAM Original PDF
    KM684000ALGI-7L Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALGI-7L Samsung Electronics 128K x 8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALI Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    KM684000ALI-L Samsung Electronics 512K x8 bit Low Power CMOS Static RAM Original PDF
    ...

    KM6840 Datasheets Context Search

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    KM6 II

    Abstract: KM684000ALP-7 KM684000A KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND
    Text: PRELIMINARY CMOS SRAM KM684000A Family 512Kx8 bit Low Power CMOS Static RAM FEATURES ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü ¡Ü GENERAL DESCRIPTION Process Technology : 0.4§- CMOS Organization : 512Kx8 Power Supply Voltage : Single 5V ¡¾ 10% Low Data Retention Voltage : 2V Min


    Original     		PDF KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 047MAX 002MIN KM6 II KM684000ALP-7 KM684000AL KM684000ALI KM684000ALI-L KM684000AL-L KM684000ALP-5 KM684000ALGI-7L A2ND

    pin diagram of 74112

    Abstract: ttl 74112 pin diagram of ttl 74112 3B522
    Text: KM684002A CMOS SRAM 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Fast Access Time 15,17,20* • Max. - Low Power Dissipation Standby (TTL) : 5 0 * (Max.) The KM684002A is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits. The


    OCR Scan     		PDF KM684002A KM684002A- KM684002A KM684002AJ 36-SOJ-4QO 1024x8 0D3bS24 36-SOJ-4QO pin diagram of 74112 ttl 74112 pin diagram of ttl 74112 3B522

    TSOP 173 g

    Abstract: KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000A KM684000AL KM684000ALI KM684000ALI-L
    Text: i, CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology: 0.4 um CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP 71b4142 DD23bST TSOP 173 g KM684000ALG-7 4000 CMOS KM684000ALGI-7L KM684000ALP-7L KM684000ALP-5L KM684000AL KM684000ALI KM684000ALI-L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary KM684002A CMOS SRAM 5 12K x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 12,15,20 ns Max. • Low Power Dissipation Standby (TTL) : 50 mA (CMOS): 10 mA Operating KM684002A-12 : 200 mA(Max.) KM684002A-15: 190 mA(Max.)


    OCR Scan     		PDF KM684002A KM684002A-12 KM684002A-15: KM684002A-20: KM684002AJ: 36-SOJ-400 KM684002A 304-bit

    Untitled

    Abstract: No abstract text available
    Text: FrelrmiTrsry CMOS SRAM KM684002B, KM684002BI 512 K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ Fast Access Time 10,12,15* “ Max. - Low Power Dissipation Standby (TTL) : 40» • (Max.) The KM684002B is a 4,194,304-bit high-speed Static Random


    OCR Scan     		PDF KM684002B, KM684002BI KM684002B KM684002B- KM684002BJ 36-SOJ-400 KM684002BT 36-TSOP2-400F

    KM684000BLP-7

    Abstract: KM684000B KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L
    Text: Prem iìinary CMOS SRAM KM684000B Family 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION ~ - The KM684000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package types


    OCR Scan     		PDF KM684000B 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 003bS17 KM684000BLP-7 KM684000BL KM684000BLI KM684000BLI-L KM684000BL-L KM684000BLP-5 KM684000BLP-5L KM684000BLP-7L KM684000BLG-7L

    Untitled

    Abstract: No abstract text available
    Text: KM684000A Family_ CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES GENERAL DESCRIPTION •• Process Technology : 0.4 * CMOS •• Organization : 512Kx8 •■ Power Supply Voltage : Single 5V •• 10% ■ Low Data Retention Voltage : 2V Min


    OCR Scan     		PDF KM684000A 512Kx8 512Kx8 32-DIP, 32-SOP, 32-TSOP 47MAX

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b7E D 7=]L.4142 0 0 1 7 7 1 3 3S7 « S M G K PRELIMINARY KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 15, 20, 25 ns Max. • Low Power Dissipation


    OCR Scan     		PDF KM684002 KM684002J-15: 180mA KM684002J-20: 170mA KM684002J-25: 160mA KM684002J: 36-Pin KM684002

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5 fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)


    OCR Scan     		PDF KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: KM684002A CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial Temperature Range. Revision History Draft Data Remark Rev No. History Rev. 0.0 Initial release with Design Target. Jun. 14th, 1996


    OCR Scan     		PDF KM684002A 512Kx8 /20ns 15/17/20ns 36-SO J-400

    Untitled

    Abstract: No abstract text available
    Text: Prelimiariry CMOS SRAM KM684000ALI / ALI-L 512Kx8 Bit Industrial Temperature Range Operating Static RAM FEATURES GENERAL DESCRIPTION • Industrial tem perature operating : - 40°C ~ 85°C • Fast Access Time : 70,100ns Max. • Low power dissipation - Standby(CMOS) : 550uW (Max.) L Version


    OCR Scan     		PDF KM684000ALI 512Kx8 100ns 550uW 275nW 385mW KM684000ALGI/ALGI-L: 525mil) KM684000ALTI/ALTI-L 400mil)

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684000A Family 512Kx8 bit High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 urn CMOS The KM684000A family is fabricated by SAMSUNG'S advanced CMOS process technology. The family • Organization : 512K x8


    OCR Scan     		PDF KM684000A 512Kx8 32-DIP, 32-SOP, 32-TSOP D23bSfl 7TL4142 0G23bSc

    Untitled

    Abstract: No abstract text available
    Text: KM684002A CMOS SRAM 512K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION - Fast Access Time 15,17,20* Max. - Low Power Dissipation Standby (TTL) : 50* • (Max.) (CMOS): 10«» (Max.) Operating KM684002A- 15 : 170««(Max.) KM684002A-17 : 165*»(Max.)


    OCR Scan     		PDF KM684002A KM684002A- KM684002A-17 KM684002AJ 36-SOJ-400 KM684002A 304-bit 0Q3bS24

    Untitled

    Abstract: No abstract text available
    Text: Prelimianry CMOS SRAM KM684000AL / AL-L 512Kx8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 55,70 ns Max. • Low power dissipation - Standby(CMOS) : 550nW (Max.) L Version : 110|iW(Max.) L-L Version - Operating : 385mW /MHz(Max.)


    OCR Scan     		PDF KM684000AL 512Kx8 550nW 385mW 684000ALP/ALP-L 600mil) KM684000ALG/ALG-L 525mii) KM684000ALT/ALT-L 684000ALR/ALR-L

    Untitled

    Abstract: No abstract text available
    Text: KM684002, KM684002E, KM684002I CMOS SRAM Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Revolutionary Pin out. Operated at Commercial, Extended and Industrial Temperature Range. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary.


    OCR Scan     		PDF KM684002, KM684002E, KM684002I 512Kx8 KM684002I KM684002E

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION KM684002 CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM FEATURES • Fast Access Time: 15, 20, 25ns max. • Low Power Dissipation Standby (TTL) : 60mA (max.) (CMOS): 20mA (max.) Operating KM644005J-15: 180mA (max.) KM644005J-20: 160mA (max.)


    OCR Scan     		PDF KM684002 KM644005J-15: 180mA KM644005J-20: 160mA KM644005J-25: 140mA KM684002J: 36-pin

    Untitled

    Abstract: No abstract text available
    Text: KM684002/L CMOS SRAM 524,288 WORD x 8 Bit High Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES • Fast Access Time : 17, 20, 25ns Max. • Low Power Dissipation Standby OTL) 60mA (Max.) (CMOS) 3mA (Max.) L-Ver : 500^ A (Max) Operating : KM684002-17: 180mA (Max.)


    OCR Scan     		PDF KM684002/L KM684002-17: 180mA KM664002-20: 170mA KM684002-25: 160mA KM684002J/LJ 36-SQJ-400 KM684002/L

    Untitled

    Abstract: No abstract text available
    Text: KM684000L/KM684000L-L CMOS SRAM 524,288 WORD x 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10/iW (Typ.) L Version 5fiW (Typ.) L-L Version Operating: 110mW/MHz (Max.)


    OCR Scan     		PDF KM684000L/KM684000L-L 100ns 10/iW 110mW/MHz KM684000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil)

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684000C Family 512Kx8 bit Low Power CMOS Static RAM Revision No. History Draft Date Remark 0.0 Initial draft O ctober 20,1998 Prelim inary 1.0 Finalize April 12, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and


    OCR Scan     		PDF KM684000C 512Kx8 32-DIP 004MAX1

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684002B, KM684002BI Document Title 512Kx8 Bit High Speed Static RAM 5V Operating , Operated at Commercial and Industrial Temperature Range. Revision History RevNo. History Rev. 0.0 Initial release with Design Target. Jan. 1st 1997 Design Target


    OCR Scan     		PDF KM684002B, KM684002BI 512Kx8 190mA 180mA 36-TSOP2-400F

    KM684002

    Abstract: KM684002E KM684002I KM684002J SRAM sheet samsung 323AD
    Text: KM684002, KM684002E, KM684002I CMOS SRAM Docum ent Title 512K x8 B it H igh S peed S ta tic RAM 5V O pe ra tin g , R e v o lu tio n a ry Pin ou t. O perated at C o m m e rcia l, E xten ded and In d u s tria l T e m p e ra tu re Range. Revision History R ev No.


    OCR Scan     		PDF KM684002, KM684002E, KM684002I 512Kx8 36-SOJ-400 008tg KM684002 KM684002E KM684002I KM684002J SRAM sheet samsung 323AD

    Untitled

    Abstract: No abstract text available
    Text: CMOS SRAM KM684002B, KM684002BI 512Kx8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 10,12,15ns Max. • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating KM684Q02B - 1 0 :210mA(Max.) KM684002B -12 : 205mA(Max.)


    OCR Scan     		PDF KM684002B, KM684002BI 512Kx8 KM684Q02B 210mA KM684002B 205mA 200mA KM684002BJ

    Untitled

    Abstract: No abstract text available
    Text: KM684000UKM684000L-L CMOS SRAM 524,288 WORD X 8 Bit CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time: 55, 70, 85, 100ns Max. • Low Power Dissipation Standby (CMOS): 10(iW (Typ.) L Version 5/iW ITyp.) L-L Version Operating: 110mW /MHz (Max.)


    OCR Scan     		PDF KM684000UKM684000L-L 100ns 110mW KM6B4000LP/LP-L: 32-pin 600mil) KM684000LG/LG-L: 525mil) KM684000LT/LT-L:

    Untitled

    Abstract: No abstract text available
    Text: KM684000LI/LI-L CMOS SRAM 524,288K WORD x 8 Bit High Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time : 70,85,100ns Max. • Low Power Dissipation Standby (CMOS) : 11mW(Typ-) 1.1/iW(Typ.) L-Version 275« WfTyp.) LL-Version Operating


    OCR Scan     		PDF KM684000LI/LI-L 100ns KM684000LGI/LGI-L 32-SOP-525 KM684000LTI/LTI-L 32-TSOP2-400F KM684000LRI/LRI-L 32-TSQP2-400R KM684000 304-bit