al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
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KTC2016
KTA1036.
al205
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: MITSUMI Lithium-Ion Secondary Battery Charge Control IC for AC Charger MM3324 Lithium-Ion Secondary Battery Charge Control IC for AC Charger Monolithic IC MM3324 Outline This charge control IC has characteristics to monitor battery temperature to control the charge current and
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MM3324
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omron s3s
Abstract: DETECTEUR E2K-X15MF1 E2K-X8MF1 IE2K s3d8 E2K-X4MF1 E2K-X4MF2 IEC-144 transistor 7k cen
Text: DETECTEUR DE PROXIMITE IE2K–X Détecteur de proximité capacitif Détecte presque toutes sortes d’objets, métalliques ou non, y compris verre, bois, eau, huile, plastique. Trois types de filetage disponibles M12, M18 et M30, pour un montage aisé. Tous les modèles sont munis de voyants DEL
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200mA,
250Vc
X15MVV
omron s3s
DETECTEUR
E2K-X15MF1
E2K-X8MF1
IE2K
s3d8
E2K-X4MF1
E2K-X4MF2
IEC-144
transistor 7k cen
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vt6 transistor
Abstract: mm3324 charging lithium ic Battery Charger circuit diagram mitsumi AC DC charger
Text: MITSUMI Lithium-Ion Secondary Battery Charge Control IC for AC Charger MM3324 Lithium-Ion Secondary Battery Charge Control IC for AC Charger Monolithic IC MM3324 Outline This charge control IC has characteristics to monitor battery temperature to control the charge current and
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MM3324
vt6 transistor
mm3324
charging lithium ic
Battery Charger circuit diagram
mitsumi AC DC charger
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KTB988
Abstract: KTD1351 2.T transistor planar
Text: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).
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KTB988
KTD1351.
KTB988
KTD1351
2.T transistor planar
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KTD2058
Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 DATASHEET
KTB1
KTD2058 Y
KTB1366
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k244 transistor
Abstract: AL-P11 k244 PX1-C12S PX1-C18S AL-SP21 PM2S sK413 AL-SK21 AL-SN31
Text: Limit Switches General information Limit switches, AL and K244 series • Description FUJI AL and K244 series limit switches have wide application in such industrial equipment as machine tools, printing machines, and transfer machines. These switches feature a sturdy aluminum diecast housing that is highly resistant to oil,
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SI-1020
SF-2025
SK-580
K244-xP-2
K244-gR-2
DEC1905a
k244 transistor
AL-P11
k244
PX1-C12S
PX1-C18S
AL-SP21
PM2S
sK413
AL-SK21
AL-SN31
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ktc2036
Abstract: 200X200X2mm
Text: SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max) at IC=2A, IB=0.2A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO 80 V VCEO
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KTC2036
ktc2036
200X200X2mm
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KTD2058
Abstract: KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTB1366. L L MAXIMUM RATING (Ta=25℃) RATING UNIT
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KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 Y
KTB1366
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A 2601
Abstract: Q310 Q2210 Q301 Q302 Q335 Q334 Q110 Q300 Q100
Text: ООО "ЭФО"194021 С-Петербург Политехническая ул.21 Тел.812-2478900 или 3278654 факс 812-2475340 Email nais@efo.spb.su http://www.efo.ru Серия Q1. Цилиндрические индуктивные датчики.
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500Hz
200mA
Q324/Q326*
Q334/Q336*
400Hz
100mA
24VDC
A 2601
Q310
Q2210
Q301
Q302
Q335
Q334
Q110
Q300
Q100
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max) at IC=2A, IB=0.2A C P K G B E L L MAXIMUM RATING (Ta=25℃) RATING UNIT VCBO 80 V VCEO 60
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KTC2036
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E2K-X8MF1
Abstract: E2K-X4MF1 omron my1 Y92E-B12 E2K-X15MY2 E2K-X4ME1 proximity sensor E2K-X15ME1 E2K-X15ME2 E2K-X15MF1
Text: Capacitive Prox E2K-X Threaded, Cylindrical Sensor Detects Metallic and Non-metallic Objects • Permits non-contact detection of metallic and non-metallic objects such as glass, wood, water, oil and plastic ■ Allows indirect detection of materials inside non-metallic containers
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1-800-55-OMRON
E2K-X8MF1
E2K-X4MF1
omron my1
Y92E-B12
E2K-X15MY2
E2K-X4ME1
proximity sensor
E2K-X15ME1
E2K-X15ME2
E2K-X15MF1
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KTB989
Abstract: KTD1352 80Vg
Text: SEMICONDUCTOR KTB989 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌGood Linearity of hFE. F ᴌComplementary to KTD1352. P B Q D RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80
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KTB989
KTD1352.
KTB989
KTD1352
80Vg
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR KTA1036 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. P Q D B ᴌComplementary to KTC2016. MAXIMUM RATING (Ta=25ᴱ)
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KTA1036
KTC2016.
KTA1036
KTC2016
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KTC2026
Abstract: KTA1046
Text: SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Collector Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTA1046. L L MAXIMUM RATING (Ta=25℃)
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KTC2026
KTA1046.
O-220IS
KTC2026
KTA1046
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E2K-X
Abstract: E2K-X15MF1 E2K-X4MF1 E2K-X8MY1 E2K-X15MY2 E2K-X4ME1 omron my1 scr omron E2K-X15ME1 E2K-X15ME2
Text: E2K-X E2K-X Capacitive Prox E2K-X Threaded, Cylindrical Sensor Detects Metallic and Non-metallic Objects • Permits non-contact detection of metallic and non-metallic objects such as glass, wood, water, oil and plastic ■ Allows indirect detection of materials
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1-800-55-OMRON
E2K-X
E2K-X15MF1
E2K-X4MF1
E2K-X8MY1
E2K-X15MY2
E2K-X4ME1
omron my1
scr omron
E2K-X15ME1
E2K-X15ME2
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cirocomm
Abstract: No abstract text available
Text: Top Bottom SWLP.2450.12.4.B.02 Specification Part No. SWLP.2450.12.4.B.02 Product Name 12mm*12mm*4mm 2.4GHz SMD Patch Antenna Feature For Wi-Fi/WLAN/ISM/Zigbee Industrial Applications ROHS Compliant High Gain 2dBi SPE-13-8-007/B/SS | page 1 of 13 1. Introduction
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SPE-13-8-007/B/SS
60-120sec
10-30sec
cirocomm
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR KTA1036 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. P Q D B ᴌComplementary to KTC2016. MAXIMUM RATING (Ta=25ᴱ)
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KTA1036
KTC2016.
KTA1036
KTC2016
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KTA1046
Abstract: transistor ktA1046 equivalent ktc2026 KTC2026
Text: SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌLow Collector Saturation Voltage E B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. S G ᴌComplementary to KTA1046. R T L K L
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KTC2026
KTA1046.
O-220IS
KTA1046
transistor ktA1046
equivalent ktc2026
KTC2026
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KTB988
Abstract: KTD1351
Text: SEMICONDUCTOR KTD1351 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A P Q D B ᴌComplementary to KTB988. MAXIMUM RATING (Ta=25ᴱ) RATING UNIT
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KTD1351
KTB988.
KTB988
KTD1351
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KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR TECHNICAL DATA KTA1036 EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Collector Saturation Voltage : VCE sat =-1.0V(Max.) at Ic=_2A, Ib=_0.2A. • Complementary to KTC2016. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
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KTA1036
KTC2016.
220AB
300x300x2mm
200x200x2mm
100x100x1mm
50x50xlmm
KTA1036
KTC2016
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation
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KTB988
KTD1351.
50x50xlmm
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277 hall sensor
Abstract: TA8402F 471cn
Text: -TA8402F 3 PHASE HALL MOTOR DRIVER. TA8402F is output current detect voltage drive type 3 phase unipolar hall motor driver. Bipolar drive also available with additional transistors. . 3 Phase Unipolar Hall Motor Driver and Also
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TA8402F
TA8402F
277 hall sensor
471cn
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