al205
Abstract: KTA1036 KTC2016
Text: SEMICONDUCTOR KTC2016 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) (IC=2A, IB=0.2A). P Q D B ᴌComplementary to KTA1036. MAXIMUM RATINGS (Ta=25ᴱ) SYMBOL RATING
|
Original
|
KTC2016
KTA1036.
al205
KTA1036
KTC2016
|
PDF
|
50-DP
Abstract: FP80-40DN FP100-50DN FP100-50DN2 FP100-50DN3 FP80-40DN2 FP80-40DN3 FP80-40DP FP80-40DP2 FP80-40DP3
Text: FP80FP80-系列 FP100FP100 -系列 外 观 图 外 型 尺 寸 安 装 方 式 输出 接线 图 NPN 型 号 直 流 型 PNP 常 开 FP80-40DN FP100-50DN 图1 常 闭 FP80-40DN2 FP100-50DN2 图1 常 开 常 闭 FP80-40DN3 FP100-50DN3 图3 常 开 FP80-40DP
|
Original
|
FP80FP80-
FP100FP100-
FP100-50DN
FP80-40DN2
FP100-50DN2
FP80-40DN
FP80-40DN3
FP100-50DN3
FP80-40DP
FP100-50DP
50-DP
FP80-40DN
FP100-50DN
FP100-50DN2
FP100-50DN3
FP80-40DN2
FP80-40DN3
FP80-40DP
FP80-40DP2
FP80-40DP3
|
PDF
|
KTB988
Abstract: KTD1351 2.T transistor planar
Text: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).
|
Original
|
KTB988
KTD1351.
KTB988
KTD1351
2.T transistor planar
|
PDF
|
KTD2058
Abstract: KTD2058 DATASHEET KTB1 KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C P E S B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. G ᴌComplementary to KTB1366. R T L K L MAXIMUM RATING (Ta=25ᴱ) J RATING UNIT Collector-Base Voltage
|
Original
|
KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 DATASHEET
KTB1
KTD2058 Y
KTB1366
|
PDF
|
ktc2036
Abstract: 200X200X2mm
Text: SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max) at IC=2A, IB=0.2A MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL RATING UNIT VCBO 80 V VCEO
|
Original
|
KTC2036
ktc2036
200X200X2mm
|
PDF
|
KTD2058
Abstract: KTD2058 Y KTB1366
Text: SEMICONDUCTOR KTD2058 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTB1366. L L MAXIMUM RATING (Ta=25℃) RATING UNIT
|
Original
|
KTD2058
KTB1366.
O-220IS
KTD2058
KTD2058 Y
KTB1366
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC2036 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Collector Saturation Voltage : VCE sat =1.0V(Max) at IC=2A, IB=0.2A C P K G B E L L MAXIMUM RATING (Ta=25℃) RATING UNIT VCBO 80 V VCEO 60
|
Original
|
KTC2036
|
PDF
|
KTB989
Abstract: KTD1352 80Vg
Text: SEMICONDUCTOR KTB989 TECHNICAL DATA TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌGood Linearity of hFE. F ᴌComplementary to KTD1352. P B Q D RATING UNIT Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80
|
Original
|
KTB989
KTD1352.
KTB989
KTD1352
80Vg
|
PDF
|
KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR KTA1036 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. P Q D B ᴌComplementary to KTC2016. MAXIMUM RATING (Ta=25ᴱ)
|
Original
|
KTA1036
KTC2016.
KTA1036
KTC2016
|
PDF
|
KTB988
Abstract: KTD1351
Text: SEMICONDUCTOR KTB988 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. P Q D B ᴌCollector Power Dissipation : PC=30W (Tc=25ᴱ).
|
Original
|
KTB988
KTD1351.
KTB988
KTD1351
|
PDF
|
KTC2026
Abstract: KTA1046
Text: SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES ・Low Collector Saturation Voltage C P : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. E K G B ・Complementary to KTA1046. L L MAXIMUM RATING (Ta=25℃)
|
Original
|
KTC2026
KTA1046.
O-220IS
KTC2026
KTA1046
|
PDF
|
KTA1036
Abstract: KTC2016
Text: SEMICONDUCTOR KTA1036 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Collector Saturation Voltage F : VCE sat =-1.0V(Max.) at IC=-2A, IB=-0.2A. P Q D B ᴌComplementary to KTC2016. MAXIMUM RATING (Ta=25ᴱ)
|
Original
|
KTA1036
KTC2016.
KTA1036
KTC2016
|
PDF
|
KTA1046
Abstract: transistor ktA1046 equivalent ktc2026 KTC2026
Text: SEMICONDUCTOR KTC2026 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A FEATURES C DIM A B C D E F P F U ᴌLow Collector Saturation Voltage E B : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A. S G ᴌComplementary to KTA1046. R T L K L
|
Original
|
KTC2026
KTA1046.
O-220IS
KTA1046
transistor ktA1046
equivalent ktc2026
KTC2026
|
PDF
|
KTB988
Abstract: KTD1351
Text: SEMICONDUCTOR KTD1351 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R S FEATURES E ᴌLow Saturation Voltage F : VCE sat =1.0V(Max.) at IC=2A, IB=0.2A P Q D B ᴌComplementary to KTB988. MAXIMUM RATING (Ta=25ᴱ) RATING UNIT
|
Original
|
KTD1351
KTB988.
KTB988
KTD1351
|
PDF
|
|
|
KTB989
Abstract: KTD1352
Text: SEMICONDUCTOR TECHNICAL D A TA KTB989 TRIPLE DIFFUSED PNP TRANSISTOR GENERAL PURPOSE APPLICATION. itBFh p in FEATURES • Good Linearity of Iife• Complementary to KTD1352. DIM M ILLIMETERS MAXIMUM RATINGS Ta=25°C CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
KTB989
KTD1352.
220AB
50x50x2mm
50x50xlmm
D50x50xlmm
KTB989
KTD1352
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA K TB988 TRIPLE DIFFUSED PNP TRANSISTOR G E N E R A L P U R P O S E A P P LIC A T IO N . A p FEA TU RES R S • Low Collector Saturation Voltage J „ ¡_ L l : VCE sat =-1.0V(Max.) at IC=-3A, IB=-0.3A. " P • Collector Power Dissipation
|
OCR Scan
|
KTB988
KTD1351.
50x50xlmm
|
PDF
|
KTC2026
Abstract: KTA1046 transistor ktA1046
Text: _ SEMICONDUCTOR KTC2026 TECHNICAL DA TA KOREA ELECTRONICS CO.,LTD. EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTA1046. MAXIMUM RATINGS (Ta=25°C)
|
OCR Scan
|
KTC2026
KTA1046.
220IS
KTC2026
KTA1046
transistor ktA1046
|
PDF
|
transistor A1046
Abstract: A1046 KTA1046 a1046 transistor ktc2026 kec a1046 KtC2026 Y
Text: SEMICONDUCTOR TECHNICAL DATA KTC2026 EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : V CE<sat =1.OV Max.) (IC=2A, IB=0.2A). • Complementary to KTA1046. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage
|
OCR Scan
|
KTC2026
KTA1046.
220IS
transistor A1046
A1046
KTA1046
a1046 transistor
ktc2026
kec a1046
KtC2026 Y
|
PDF
|