MXP4000
Abstract: MXP4001 MXP4002 MXP4003 laser diode 10mw 1550nm construction of photo diode MXP400X
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
|
Original
|
PDF
|
MXP4000
MXP400x
1310nm
1550nm
MXP4001
00E-12
MXP4002
MXP4000
MXP4001
MXP4002
MXP4003
laser diode 10mw 1550nm
construction of photo diode
|
Untitled
Abstract: No abstract text available
Text: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications • Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features Functional Block Diagram Frequency Range: 11 - 17 GHz
|
Original
|
PDF
|
TGA2565-SM
TGA2565-SM
|
PIN photodiode 850nm
Abstract: MXP7000 MXP7001
Text: MXP7001 – 12.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S 10Gigabit Ethernet, Fibre Channel
|
Original
|
PDF
|
MXP7001
10Gigabit
MXP7000
850nm
PIN photodiode 850nm
MXP7001
|
Untitled
Abstract: No abstract text available
Text: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications • Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features Functional Block Diagram Frequency Range: 11 - 17 GHz
|
Original
|
PDF
|
TGA2565-SM
TGA2565-SM
|
construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 PHOTO diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400x series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
|
Original
|
PDF
|
MXP4001
MXP400x
1310nm
1550nm
00E-11
MXP4000
00E-12
construction of photo diode
MXP4000
MXP4001
MXP4002
MXP4003
PHOTO diode
|
Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
|
Original
|
PDF
|
MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
|
Untitled
Abstract: No abstract text available
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The MXP4000 large active area and low dark current make it ideal for laser diode power monitoring applications. The device series offers superior noise
|
Original
|
PDF
|
MXP4000
1310nm
1550nm
MXP4000
MXP400x
00E-11
00E-12
|
Untitled
Abstract: No abstract text available
Text: MXP7001 – 10Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
|
Original
|
PDF
|
MXP7001
10Gbps
MXP7000
850nm
850nm
|
1550nm photo diode for 10Gbps
Abstract: construction of photo diode MXP4005 1550nm catv receiver MXP4003 IR PHOTO DIODE amplifier 1550nm optical device 1550nm 10mW photo diode
Text: MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the versatility of custom assembly configurations.
|
Original
|
PDF
|
MXP4005
MXP400X
12GHz
1310nm
1550nm
1550nm
1430nm
1550nm photo diode for 10Gbps
construction of photo diode
MXP4005
1550nm catv receiver
MXP4003
IR PHOTO DIODE amplifier
1550nm optical device
1550nm 10mW photo diode
|
MXP4000
Abstract: PIN PHOTO DIODE construction of photo diode
Text: MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
|
Original
|
PDF
|
MXP4000
MXP4000
PIN PHOTO DIODE
construction of photo diode
|
construction of photo diode
Abstract: MXP7000 MXP7002 PIN PHOTO DIODE GaAs wafer 850nm Receivers
Text: MXP7002 – 3.125Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
|
Original
|
PDF
|
MXP7002
125Gbps
MXP7000
850nm
construction of photo diode
MXP7002
PIN PHOTO DIODE
GaAs wafer
850nm Receivers
|
Untitled
Abstract: No abstract text available
Text: TGA2565-SM 11-17 GHz Medium Power Amplifier Applications • Clock Driver for Optical Systems VSAT Point-to-Point Radio Test Equipment & Sensors QFN 4x4mm 24L Product Features Functional Block Diagram Frequency Range: 11 - 17 GHz
|
Original
|
PDF
|
TGA2565-SM
TGA2565-SM
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR850-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number
|
Original
|
PDF
|
AR850-20
850nm
320x420um
508um
127um
AR880-20
100mA
|
Untitled
Abstract: No abstract text available
Text: MXP7002 – 2.5Gbps GaAs PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION High Responsivity Low Dark Current High Bandwidth Anode/Cathode on Illuminated Side APPLICATIONS S Short Reach Optical Networks S Gigabit Ethernet, Fibre Channel
|
Original
|
PDF
|
MXP7002
MXP7000
850nm
850nm
|
|
|
construction of photo diode
Abstract: MXP4000 MXP4001 MXP4002 MXP4003 IR PHOTO DIODE amplifier 1550nm 10mW photo diode
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
|
Original
|
PDF
|
MXP4001
MXP4000
MXP400X
00E-11
MXP4000
00E-12
MXP4002
MXP4003
00E-13
construction of photo diode
MXP4001
MXP4002
MXP4003
IR PHOTO DIODE amplifier
1550nm 10mW photo diode
|
DIODE ED
Abstract: DIODE ED 11 ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Extremely Low Dark Current Extremely Low Capacitance
|
Original
|
PDF
|
MXP4001
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
DIODE ED
DIODE ED 11
ED 08 diode
|
diode ed 85
Abstract: DIODE ED 11 1430nm ED 08 diode
Text: Obsolete Product – not recommended for new design MXP4000 – Monitor InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DAT A SHEET KEY FEATURES DESCRIPTION High Responsivity Large Active Area Low Dark Current Custom Sub-mounts or TO package
|
Original
|
PDF
|
MXP4000
508um
1310nm
1550nm
MXP400X
00E-11
MXP4000
MXP4001
MXP4002
diode ed 85
DIODE ED 11
1430nm
ED 08 diode
|
Untitled
Abstract: No abstract text available
Text: epitex Opto-Device & Custom LED 20 Elements LED array SPECIFICATION OF LED ARRAY AR880-20 [INFRARED] Specifications 1 Product Name 2) Type No. 3) Chip 1) Chip Material (2) Peak Wavelength (3) Emitting Area (4) Element Dimension (5) Chip Dimension (6) Elements Number
|
Original
|
PDF
|
AR880-20
880nm
320x420um
508um
127um
100mA
|
1550nm photo diode for 10Gbps
Abstract: No abstract text available
Text: Obsolete Product – not recommended for new design MXP4005 – 12.7 Gbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS PRODUCTION DATA SHEET KEY FEATURES DESCRIPTION The MXP400X series of photo diodes are currently offered in die form allowing manufacturers the
|
Original
|
PDF
|
MXP4005
1310nm
1550nm
MXP400X
1550nm
1430nm
1550nm photo diode for 10Gbps
|
Untitled
Abstract: No abstract text available
Text: MXP4001 – 622 Mbps InGaAs/InP PIN Photo Diode OPTO-ELECTRONIC PRODUCTS ENGINEERING SPECIFICATION KEY FEATURES DESCRIPTION The device series offers superior noise performance and sensitivity due to their planar construction and passivation. Every wafer of each lot is extensively
|
Original
|
PDF
|
MXP4001
1310nm
1550nm
MXP4000
1550nm
|
13003 HJ
Abstract: HJ 13003 MJ 15030 mj 13003 CON-290 Irf 1540 N Irf 1540 G aries 14004 15017 F444
Text: ^i £x i t w f a r aaAw « «i fcet, then?are structure Is not an easy task. W eM m M ed la make It as easy «11 poa i r . f - 9 r* * t n j n t o 9 t °* P«o«* ««ItaM e on socket prvclrsj e 1 . Trjf j to •• aibte with the foflowing description. “• ‘ ' T - •■
|
OCR Scan
|
PDF
|
-V400_
13003 HJ
HJ 13003
MJ 15030
mj 13003
CON-290
Irf 1540 N
Irf 1540 G
aries 14004
15017
F444
|