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    50113D Price and Stock

    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-375

    MODULAR LIGHT PIPE SYSTEM, BEZEL
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    DigiKey MLPS-B-5-0113-D0-6-PLW5-375 Bag 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-500

    MODULAR LIGHT PIPE SYSTEM, BEZEL
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    DigiKey MLPS-B-5-0113-D0-6-PLW5-500 Bag 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-7MM

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-7MM Bag 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLP5-625

    LIGHT PIPE RIGID 4.95MM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLP5-625 Bulk 10
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    Bivar Inc MLPS-B-5-0113-D0-6-PLW5-188

    MODULAR LIGHT PIPE SYSTEM, BEZEL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MLPS-B-5-0113-D0-6-PLW5-188 Bag 10
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    • 10 $18.981
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    50113D Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BCV26

    Abstract: to-202h
    Text: Discrete POW ER & Signal Technologies S e m i c o n d u c t o r ' BCV26 & _ National BCV26 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. Absolute Maximum Ratings*


    OCR Scan     		BCV26 O-202) bS01130 BCV26 to-202h PDF

    027Q

    Abstract: NDS336P
    Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS


    OCR Scan     		NDS336P --125-C LSD1130 027Q PDF

    NDS8435

    Abstract: No abstract text available
    Text: & N a t io nal Semiconductor" M ay 19 96 NDS8435 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS8435 028i2 50113D NDS8435 PDF

    5P 5P

    Abstract: No abstract text available
    Text: NATL SEMICOND D IS C R E T E 1 1 E 5 | =501130 0 0 3 7 1 A S T I This Material Copyrighted By Its Respective Manufacturer 1 5 10* 55 10 25 TO-220 (37 45 5 10’ 55 20 40 D45C6 TO-220 (37) 45 5 10* 55 D45C7 60 5 10* Its TO-220 (37) D45C8 TO-220 (37) 60 5


    OCR Scan     		bSQ1130 T-33-01 5P 5P PDF

    NPN sot23 mark NF

    Abstract: BC846 BC846A BC846B BC847 BC847A BC847B BC847C S0113D
    Text: S e m i c o n d u c t o r " BC846A BC846B BC847A BC847B BC847C SOT-23 SOT-23 Mark: 1 A ./1 B Mark: 1 E ./ 1 F ./ 1 G . NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1.0 jiA to 50 mA.


    OCR Scan     		BC846A BC846B OT-23 BC847A BC847B BC847C BC846 BC847 NPN sot23 mark NF BC846B BC847C S0113D PDF

    NDS9430

    Abstract: No abstract text available
    Text: May 1996 National tß Semiconductor ” NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		May19i NDS9430 NDS9430 bSD1130 PDF

    NDS9430

    Abstract: No abstract text available
    Text: May 1996 National tß Semiconductor ” NDS9430 Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		NDS9430 bSD1130 NDS9430 PDF

    55b6

    Abstract: NDC631N
    Text: National J u ly 1 9 9 6 Semiconductor NDC631N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description • 4.1 A, 20 V. R ^ , = 0.06 Cl @ V GS = 4.5 V Rds,on, = 0.0 75 Cl @ V GS =2.7 V. These N-Channel lo g ic level enhancem ent m ode


    OCR Scan     		NDC631N 55b6 NDC631N PDF

    transistor s34

    Abstract: MPSH11 MPS-H11
    Text: è* Semiconductor MPSH11 I MMBTH11 D iscrete PO W ER & S ig n a l Technologies National MPSH11 SOT-23 M ark: 3G NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 p A to


    OCR Scan     		MMBTH11 MPSH11 OT-23 bSD113D transistor s34 MPSH11 MPS-H11 PDF

    b527

    Abstract: tic 263a NDP506A
    Text: National Semiconductor” M a y 19 95 NDP506A / NDP506B NDB506A / NDB506B N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field • 26 and 24A, 60V. RDS 0N| = 0.05 and 0.06J2. effect transistors are produced using National's


    OCR Scan     		NDP506A NDP506B NDB506A NDB506B bSD113D b527 tic 263a PDF