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    5 GHZ TRANSISTOR 1W Search Results

    5 GHZ TRANSISTOR 1W Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    5 GHZ TRANSISTOR 1W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    smd transistor marking z3

    Abstract: smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A
    Text: Freescale Semiconductor Technical Data Document Number: MRF18090A Rev. 7, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF18090AR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF18090A MRF18090AR3 smd transistor marking z3 smd transistor marking j8 MOSFET marking Z4 transistor 6 pin SMD Z2 smd transistor marking z8 freescale semiconductor body marking smd transistor marking j6 Z9 TRANSISTOR SMD 465B MRF18090A

    Untitled

    Abstract: No abstract text available
    Text: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF186/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this


    Original     		PDF MRF186/D MRF186

    LP1500

    Abstract: MIL-HDBK-263 Filtronic LP1500P100 pHEMT transistor
    Text: LP1500P100 PACKAGED 1W POWER PHEMT • FEATURES ♦ 31 dBm Output Power at 1-dB Compression at 15 GHz ♦ 9 dB Power Gain at 15 GHz ♦ 42 dBm Output IP3 at 15GHz ♦ 60% Power-Added Efficiency • DESCRIPTION AND APPLICATIONS The LP1500P100 is a packaged Aluminum Gallium Arsenide / Indium Gallium Arsenide


    Original     		PDF LP1500P100 15GHz LP1500P100 LP1500 MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 Filtronic pHEMT transistor

    rf transistor 6ghz 1w

    Abstract: TC2571 TC1501
    Text: TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation


    Original     		PDF TC2571 TC2571 TC1501 rf transistor 6ghz 1w

    FPD3000P100

    Abstract: phemt FPD1500P100
    Text: FPD1500P100 1W PACKAGED POWER PHEMT • FEATURES ♦ 29.5 dBm Linear Output Power ♦ 18 dB Power Gain at 2 GHz ♦ 10.5 dB Maximum Stable Gain at 10 GHz ♦ 39 dBm Output IP3 ♦ 45% Power-Added Efficiency at 2 GHz • DESCRIPTION AND APPLICATIONS The FPD1500P100 is a packaged AlGaAs/InGaAs pseudomorphic High Electron Mobility


    Original     		PDF FPD1500P100 FPD1500P100 FPD3000P100 phemt

    filtronic Solid State

    Abstract: LP1500 LP1500P100 LP1500-P100-1 LP1500-P100-2 LP1500-P100-3
    Text: Filtronic LP1500P100 PACKAGED 1W POWER PHEMT Solid State FEATURES • +31 dBm Typical Power at 15 GHz • 12.5 dB Typical Power Gain at 15 GHz • Low Intermodulation Distortion • 50% Power-Added-Efficiency • Color-coded by IDSS range GATE SOURCE DRAIN


    Original     		PDF LP1500P100 LP1500P100 LP1500 MIL-STD-1686 MILHDBK-263. DSS-025 filtronic Solid State LP1500-P100-1 LP1500-P100-2 LP1500-P100-3

    FPD1500

    Abstract: MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		PDF FPD1500 FPD1500 MIL-HDBK-263 P100

    FPD1500

    Abstract: stepper FPD1500 SOT89 MIL-HDBK-263 P100
    Text: FPD1500 1W POWER PHEMT • • DRAIN BOND PAD 2X FEATURES ♦ 29 dBm Linear Output Power at 12 GHz ♦ 9 dB Power Gain at 12 GHz ♦ 12.5 dB Maximum Stable Gain at 12 GHz ♦ 41 dBm Output IP3 ♦ 35% Power-Added Efficiency SOURCE BOND PAD (2x) GATE BOND


    Original     		PDF FPD1500 FPD1500 stepper FPD1500 SOT89 MIL-HDBK-263 P100

    FPD1500

    Abstract: MIL-HDBK-263 PAD130
    Text: FPD1500 1W POWER PHEMT Datasheet v2.1 FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an


    Original     		PDF FPD1500 FPD1500 22A114. MIL-STD-1686 MIL-HDBK-263. MIL-HDBK-263 PAD130

    FPD1500

    Abstract: transistor A114 FPD1500 SOT89
    Text: FPD1500 Datasheet v3.0 1W POWER PHEMT LAYOUT: FEATURES: • • • • • 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an


    Original     		PDF FPD1500 FPD1500 22-A114. MIL-STD-1686 MILHDBK-263. transistor A114 FPD1500 SOT89

    MIL-STD-1686

    Abstract: AlGaAs resistivity LP1500 MIL-HDBK-263 P100
    Text: LP1500 1W POWER PHEMT • • FEATURES ♦ 31.5 dBm Output Power at 1-dB Compression at 18 GHz ♦ 8 dB Power Gain at 18 GHz ♦ 28 dBm Output Power at 1-dB Compression at 3.3V ♦ 45dBm Output IP3 at 18GHz ♦ 50% Power-Added Efficiency DRAIN BOND PAD 2X


    Original     		PDF LP1500 45dBm 18GHz 420x410 50x60 LP1500 MIL-STD-1686 AlGaAs resistivity MIL-HDBK-263 P100

    Untitled

    Abstract: No abstract text available
    Text: FPD1500 Datasheet v2.2 1W POWER PHEMT FEATURES: • • • • • LAYOUT: 29 dBm Linear Output Power at 12 GHz 9 dB Power Gain at 12 GHz 12.5 dB Max Stable Gain at 12 GHz 41 dBm Output IP3 35% Power-Added Efficiency GENERAL DESCRIPTION: The FPD1500 is an AlGaAs/InGaAs


    Original     		PDF FPD1500 FPD1500 22A114. MIL-STD-1686 MIL-HDBK-263.

    MAGX-000035-030000

    Abstract: tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035
    Text: MAGX-000035-030000 GaN HEMT Power Transistor 30W CW, 30 MHz - 3.5 GHz Preliminary, 23 Aug 11 Features •        GaN depletion mode HEMT microwave transistor Common source configuration No internal matching Broadband Class AB operation


    Original     		PDF MAGX-000035-030000 MAGX-000035-030000 tRANSISTOR 2.7 3.1 3.5 GHZ cw transistor 15 GHz MAGX-000035-SB1PPR Gan on silicon transistor GP18-20 5 GHZ TRANSISTOR 1W MAGX-000035

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    very simple walkie talkie circuit diagram

    Abstract: blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN very simple walkie talkie circuit diagram blf278 models walkie talkie circuit diagram simple walkie talkie circuit diagram SiGe HBT GAIN BLOCK MMIC AMPLIFIER N6 BF245c spice model smd TRANSISTOR code marking 8K MOBILE jammer GSM 1800 MHZ BSS83 spice model smd TRANSISTOR code marking 7k sot23

    double TRANSISTOR SMD MARKING CODE mc

    Abstract: walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578
    Text: Experience high-performance analog NXP’s RF Manual makes design work much easier NXP’s RF Manual – one of the most important reference tools on the market for today’s RF designers – features our complete range of RF products, from low to high power.


    Original     		PDF TFF1007HN TFF11070HN TFF11073HN TFF11077HN TFF11080HN TFF11084HN TFF11088HN TFF11092HN TFF11096HN TFF11101HN double TRANSISTOR SMD MARKING CODE mc walkie talkie circuit diagram very simple walkie talkie circuit diagram smd TRANSISTOR code marking 8K smd m5 transistor 6-pin walkie talkie Transceiver IC mesfet lnb toshiba smd marking code transistor blf574 BLF578

    transistor mps 13

    Abstract: SOLAR TRANSISTOR
    Text: MPS-173011-85/86 1400 to 1700 MHz Linear Amplifier www.mwtinc.com Email: info@mwtinc.com Features +45 dBm Typical IP3 Single Positive Bias 1W Typical Output Power Surface Mount Package or Half Flange Package 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the ultralinear transmitter


    Original     		PDF MPS-173011-85/86 MPS173011 45dBm) transistor mps 13 SOLAR TRANSISTOR

    MPS-173011-85

    Abstract: No abstract text available
    Text: MPS-173011-85/86 1400 to 1700 MHz Linear Amplifier www.mwtinc.com Email: info@mwtinc.com Features +45 dBm Typical IP3 Single Positive Bias 1W Typical Output Power Surface Mount Package or Half Flange Package 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the ultralinear transmitter


    Original     		PDF MPS-173011-85/86 MPS173011 45dBm) MPS-173011-85

    RCA-41024

    Abstract: RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024
    Text: File No. 658 RF Power Transistors Solid State Division 4 1024 1-W, 1-GHz Silicon N-P-N Overlay Transistor High-Gain Device for Class B- or Co­ operation in U H F Circuits Features: • 1-watt output min. at 1 GHz 5 dB gain ■ For sonde applications 0.3-w att ou tput ty p . at 1.68 GHz (V q q = 20 V )


    OCR Scan     		PDF RCA-41024 RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 41024 transistor C4 016 rca 0190 transistor 4-1024

    transistor c s z 44 v

    Abstract: No abstract text available
    Text: 4JÄ C O M w an A M P com pany CW Power Transistor, 1W 2.3 GHz PH2323-1 V2.00 Features • • • • • • • NPN S ilicon M icrow ave P o w er Transistor C o m m o n Base C on figuration C lass C O p eratio n Interdigitated G eo m etry D iffused Em itter B allasting Resistors


    OCR Scan     		PDF PH2323-1 50M50A 114P5' transistor c s z 44 v

    transistor c128

    Abstract: 55FT
    Text: C1-28/C1-28Z _ 1Watts "28 Volts’ Class C GHz TECHNOLOGY DsfCO Ill 400 IV lH Z »f-M IC »O W A V e SILICO N >OWE> « A H S IS T O H Î GENERAL DESCRIPTION CASE OUTLINE The Cl-28 / Z is a COMMON EMITTER transistor capable of providingl Watts of Class AB or C, RF output power in the band 100 - 400 MHz. This


    OCR Scan     		PDF C1-28/C1-28Z Cl-28 transistor c128 55FT

    BF547A

    Abstract: transistor bf 175 BFG65 equivalent BF547B BFG25AXD
    Text: Philips Sem iconductors RF Wideband Transistors The New Generation Contents page PREFACE 3 SELECTION GUIDE 6 S-PARAMETERS 22 SPICE AND PACKAGE PARAMETERS 44 THERMAL CHARACTERISTICS 48 DEVICE DATA in alpha-num eric sequence 54 OUTLINES 442 INDEX 448 DEFINITIONS


    OCR Scan     		PDF LCD01 BF547A transistor bf 175 BFG65 equivalent BF547B BFG25AXD

    transistor rf type M 2530

    Abstract: signal path designer INA02170
    Text: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.


    OCR Scan     		PDF INA-02: INA-03: AN-S011: transistor rf type M 2530 signal path designer INA02170

    Untitled

    Abstract: No abstract text available
    Text: MPS-173011-85/86 jVtWJ 1 IÜ I« 1701i l l llatai ttnplilii www.mwtinc.com Email: info@mwtinc.com KttntnniPAfi • +45 dBm Typical IP3 Single Positive Bias • 1W Typical Output Power Surface Mount Packs Half Flange Package • 14 dB Typical Gain The MPS173011 is a modular amplifier designed to meet the uitralinear transm itter


    OCR Scan     		PDF MPS-173011-85/86 1701i MPS173011 45dBm)