55FT
Abstract: 100-400MHz UMIL10
Text: UMIL 10 100 Watts, 28 Volts, Class AB or C Defcom 100 - 400 MHz CASE OUTLINE GENERAL DESCRIPTION 55FT, Style 2 The UMIL10 is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure
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UMIL10
150oC
200oC
55FT
100-400MHz
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Untitled
Abstract: No abstract text available
Text: One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UTV040 4 Watts, 25 Volts, Class A UHF Television - Band IV & V CASE OUTLINE 55FT, STYLE 2 GENERAL DESCRIPTION The UTV 040 is a COMMON EMITTER transistor capable of providing 4
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UTV040
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UTV020
Abstract: No abstract text available
Text: Products., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. UTV020 2 Watts, 25 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55FT, STYLE 2 The UTV 020 is a COMMON EMITTER transistor capable of providing 2
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UTV020
UTV020
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UTV040
Abstract: 55FT UTV-040 imd1
Text: UTV040 4 Watts, 25 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE 55FT, STYLE 2 The UTV 040 is a COMMON EMITTER transistor capable of providing 4 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and
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UTV040
UTV040
55FT
UTV-040
imd1
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BYISTOR
Abstract: RF Transistor reference BYI-1 BYISTOR BYI-1
Text: BYI datasheet Rev A BYI-1 BYISTOR FOR LINEAR POWER AMPLIFIERS GENERAL DESCRIPTION The BYI-1 is a semiconductor device specifically designed for use in linear amplifier bias circuitry. The byistor acts as a low impedance D.C. bias source which has two modes for thermal compensation.
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C 33725
Abstract: 4501 ic 6483 10A015 080620 144089 040196 BVces 33970 34-41-50
Text: 10A015 1.5 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A015 is a COMMON EMITTER transistor capable of providing 1.5 Watts of Class A, RF Output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10A015
10A015
C 33725
4501 ic
6483
080620
144089
040196
BVces
33970
34-41-50
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Untitled
Abstract: No abstract text available
Text: UMIL 3 3 Watts, 28 Volts, Class AB Defcom 225 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL3 is a COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure
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10A060
Abstract: 20989 78561 MAG 1832 55FT
Text: 10A060 6 Watts, 20 Volts, Class A Linear to 1000 MHz GENERAL DESCRIPTION The 10A060 is a COMMON EMITTER transistor capable of providing 6 Watts of Class A, RF output power to 1000 MHz. This transistor is specifically designed for general Class A amplifier applications. It utilizes
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10A060
10A060
20989
78561
MAG 1832
55FT
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UMIL10
Abstract: No abstract text available
Text: UMIL 10 100 Watts, 28 Volts, Class AB Defcom 100 - 400 MHz GENERAL DESCRIPTION CASE OUTLINE The UMIL10 is a COMMON EMITTER broadband transistor specifically intended for use in the 100-400 MHz frequency band. It may be operated in Class AB or C. Gold metallization and silicon diffused resistors ensure
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UMIL10
UMIL10
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Untitled
Abstract: No abstract text available
Text: UTV005 0.5 Watt, 20 Volts, Class A UHF Television - Band IV & V GENERAL DESCRIPTION CASE OUTLINE The UTV 005 is a COMMON EMITTER transistor capable of providing 0.5 Watt Peak, Class A, RF Output Power over the band 470 - 860 MHz. Gold Metalization and Diffused Ballasting are used to provide high reliability and
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UTV005
IN4148
MJE172
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LE79Q2281
Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572
Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security
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UCN relay driver
Abstract: UCN-5825B ucn5891b w1A 59 UCN-5826B UCN-5891B
Text: UCN-S82SB AND UCN-5826B BiMOS II HIGH-CURRENT, SERIAL-INPUT, LATCHED DRIVERS U CN -5825B A N D U CN -5826B BiMOS II H IG H -CU R R EN T, SER IA L-IN PU T, LATCHED DRIVERS FEATURES • • • • • • • • • ST RO BE CLO CK 2 A Open Collector Outputs
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UCN-S82SB
UCN-5826B
UCN-5825B
UCN-5826B
5826B
UCN-5891B
UCN relay driver
ucn5891b
w1A 59
UCN-5891B
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2MBI100L-060
Abstract: elth
Text: 2MBI100L-060 iooa :± / < 7 — IG B T i^ - ^ U IG B T M O D U L E : Features •S ilT High Speed Switching . 'i • Low Saturation Voltage •KA t lt f — •i a. —)\>* <" j * r —i> Module Packaging i> HSc#t(MOS-y'— HH3I) High Input Impedance : Applications
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2MBI100L-060(
2MBI100L-060
elth
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Untitled
Abstract: No abstract text available
Text: I L C DATA DEVICE CORP b5E ]> UJISIISS ILC DATA DEVICE HbTÔTb'ï QDQÔBS'i D4b « D D C BUS-6310011 SERIES CORPORATION _ MIL-STD-1553 DATA BUS SINGLE AND DUAL TRANSCEIVERS A PPR O X. VS ACT U A L S IZ E FEATURES BUS-63102 II • BUS-63125 II BUS-63105 II
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BUS-6310011
MIL-STD-1553
BUS-63102
BUS-63125
BUS-63105
BUS-6310
MIL-STD-1553A
1553B.
BUS-65612
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TF331
Abstract: tf-331 VCF9
Text: LF3310 *- — •—- - IJbVIÜI-S INuuHHÜKA IH □ 83 MHz Data Rate □ 12-bit Data and Coefficients □ On-boand Memory for 256 Horizon tal and Vertical Coefficient Sets □ LF Interface Allows All 512 Coefficient Sets to be Updated Within Vertical Blanking
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LF3310
LF3310
12-bits
16-tap
33333333Z
LF3310QC25
LF3310QC18
LF3310QC15
LF3310QC12
55ftCto
TF331
tf-331
VCF9
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Untitled
Abstract: No abstract text available
Text: Low Power First-In First-O ut FIFO 6 4 x 4 Mem ory , , 6 7 L 4 0 1 *> 7 4 o f Features/Benefits Ordering Information • Guaranteed 5 MHz shift-out/shift-in rates PART NUMBER • Low Power Consumption • TTL inputs and outputs • Readily expandable in the bit dimensions
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67L401
F3341
67L401
devic7L401
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DS36C200
Abstract: DS36C200M M14A
Text: June 1996 Semiconductor & DS36C200 Dual High Speed Bi-Directional Differential Transceiver General Description Features The DS36C200 is a dual transceiver device optimized for high data rate and low power applications. This device pro vides a single chip solution for a dual high speed bi-directional interface. Also, both control pins may be routed to
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DS36C200
DS36C200
14-lead
DS36C200M
M14A
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SSM2016
Abstract: ad796 enfora SSM-2139 hp2635 HP263 AD797S ad797sq ad743 application note AD797AN
Text: ANALOG DEVICES INC S1E D □ fllbflOD Q03St.Db 171 « A N A ~ r-T 9 - D 6 -l Ultralow Distortion, Ultralow Noise Op Amp ANALOG ► DEVICES FEATURES Low Noise 0.9 nV/VHz typ (1.2 nV/VHz max Input Voltage Noise at 1 kHz 50 nV p -p Input Voltage Noise, 0.1 to 10 Hz
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LA1352
Abstract: No abstract text available
Text: >XOX O X O X O X O X O X < > O V .\0> . >xoxo: ^ x o x o x o x o x o x o x o x o x o x c C S -5 1 0 2 1 /2 2 /2 3 / 2 4 Enhanced Current Mode PWM Controller Features Description The CS-51021 / 2 2 / 2 3 / 24 Fixed Frequency PWM Current Mode Controller provides all necessary
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CS-51021
CS-51022
CS-51023
CS-51024
CS-51021D16
CS-51021DR16
CS-51021N16
CS-51022D16
CS-51022DR16
LA1352
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2609 al
Abstract: UL94V-D
Text: 1. M echanical D im ensions: 2 . S ch em a tic: -o 4 1 O- 2 o- TOP VIEW 3. E lectrica l S p ecifica tio n s: DCL: D .5 3 m H Min @1DKHz 0 .1 V , Each Wdg DCR: 0.01 3 Ohms Typ, Each Wdg Rated Current: 6.5A (Based on a 40°C Temp Rise) Isolation Voltage: o
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2400Vrms
UL94V-D
XF5306â
Oct-26â
2609 al
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Untitled
Abstract: No abstract text available
Text: JUN 10 1982 32K x 32 SRAM moìaic PUMA 2S1010-030/35/45/55/70 Issue 2.0 : May 1992 PRELIMINARY S e m ic o n d u c to r Inc. Pin Definition 1,048,576 bit CMOS High Speed Static RAM Features Ultra Fast access times of 30/35/45/55/70 ns. Configurable as 32 / 16 / 8 bit wide output.
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2S1010-030/35/45/55/70
MIL-STD-883,
S1010
MIL-STD-883
T160S8
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S6551A
Abstract: 6551 acia AMI GOULD S6551 S-6551 S9S51 mtron
Text: •/ GOULD Asynchronous Communication Interface Adapter S6551/S6551A Features □ On-Chip Baud Rate Generator 15 Programmable Baud Rates Derived from a Standard 1.8432MHz External Crystal SO to 19,200 Baud □ Programmable Interrupt and Status Register to
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/S6551A
8432MHz
S6551/S6551A
S6551A
6551 acia
AMI GOULD
S6551
S-6551
S9S51
mtron
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55FT
Abstract: No abstract text available
Text: I T ADVANCED r i i POWER UMIL3 T e c h n o l o g y RF 3 Watts, 28 Volts, Class AB Defcom 225 - 400 M H z GENERAL DESCRIPTION CASE OUTLINE The UMIL3 is a COMMON EMITTER broadband transistor specifically intended for use in the 225-400 MHz frequency band. It may be operated in
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7H17
Abstract: No abstract text available
Text: AD VAN C ED IN FO R M A TIO N CYPRESS SEMICONDUCTOR 32,768 x 9 Synchronous Cache R/W RAM Features • Asynchronous output enable • 32K by 9 common I/O • 44-pin PLCC and LCC • BiCMOS for optimum speed/power Functional Description • 14-ns access delay clock to output
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CY7B173
CY7B174
14-ns
7B173)
7BL74)
44-pin
processor7B174
7B173-14JC
7B173-14LC
7B173-18JC
7H17
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