Untitled
Abstract: No abstract text available
Text: Advance Product Information November 5, 2001 36 to 40 GHz 1W Power Amplifier TGA1171-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 36-40 GHz Frequency Range 29 dBm Nominal Pout @ P1dB, 38GHz 14 dB Nominal Gain OTOI 36dBm at 40GHz typical
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TGA1171-EPU
38GHz
36dBm
40GHz
TGA1171
500mA,
TGA1171-EPU
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 19, 2003 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-32 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology
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TGA4505-EPU
20dBm
TGA4505-EPU
0007-inch
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mlp 836
Abstract: No abstract text available
Text: TQP4M3018 Preliminary data sheet Rev A SP3T High Power 2.6V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V
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TQP4M3018
MLP-12
mlp 836
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TQP4M3007
Abstract: No abstract text available
Text: TQP4M3007 Data Sheet SP3T High Power 2.6V CDMA Antenna Switch Features Functional Block Diagram Top View V3 N/C ANT N/C 12 11 10 Pin 1 1 • • 9 V1 • RF3 2 8 RF1 N/C 3 7 N/C • • • • • • 3.0 +/- 0.05 mm 4 5 6 N/C RF2 V2 3.0 +/- 0.05 mm pHEMT GaAs MMIC Die
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TQP4M3007
MLP-12
TQP4M30007
TQP4M3007
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Untitled
Abstract: No abstract text available
Text: Advance Product Datasheet June 7, 2001 DC-18GHz MPA with AGC TGA1328-EPU OC-192 12.5GB/s LN/MZ Driver and Receive AGC Applications Key Features and Performance • • • • • • • • • • 0.5um pHEMT Dual Gate Technology DC - 14GHz small signal 3dB BW
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DC-18GHz
OC-192
TGA1328-EPU
14GHz
TGA1328EPU
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information June 29, 2004 20 - 40 GHz X3 Frequency Multiplier TGC1430G-EPU Key Features and Performance • • • • • • • 0.25um pHEMT Technology 20 - 40 GHz Output Frequencies 8.5 - 13.5 GHz Fundamental Frequencies -15 +/- 2dB Conversion Gain
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TGC1430G-EPU
18dBm
18dBm
18dBm)
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ka band high power fet amplifier schematic
Abstract: No abstract text available
Text: 0.25-µm mmW pHEMT 2MI Process Data Sheet 4.6 µm PLATING CAP TOP PLATE 2000 Å NITRIDE 0.75 µm FIRST METAL TaN RESISTOR T-GATE ACTIVE REGION OHMIC METAL EXCEPT VIA SEMI-INSULATING GaAs SUBSTRATE VIA UNDER CAP 0.25-µm 2MI Process Cross Section General Description
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12M05019A73
Abstract: No abstract text available
Text: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description • TriQuint’s TQP4M3019 is a high power antenna switch in a single pole three throw SP3T configuration. The die utilizes TriQuint’s PHEMT MMIC
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TQP4M3019
TQP4M3019
12M05019A73
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Untitled
Abstract: No abstract text available
Text: Advance Product Information May 19, 2004 4 Watt Ka Band HPA TGA4505-EPU Key Features • • • • • • • • Frequency Range: 24-31 GHz 23 dB Nominal Gain 35.5 dBm Nominal P1dB @30 GHz 36.0 dBm Nominal Psat @30 GHz 40 dBc at SCL Pout 20dBm 0.25 um pHEMT 2MI Technology
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TGA4505-EPU
20dBm
TGA4505-EPU
36rmosonic
0007-inch
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TQP4M3007
Abstract: No abstract text available
Text: TQP4M3007 Preliminary data sheet Rev0.2 SP3T High Power 2.7V CDMA Antenna Switch Features: • • • • • MLP-12 lead 3 x 3 mm Package Outline: MLP-12 Packaged PHEMT GaAs MMIC Die Excellent ESD Rating: 300V HBM, 2000V CDM Low Control Voltage Operation to +2.3V
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TQP4M3007
MLP-12
TQP4M3007
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12M05019A73
Abstract: No abstract text available
Text: TQP4M3019 Data Sheet SP3T High Power 2.6V 2x2 mm CDMA Antenna Switch Functional Block Diagram Features • • • • • • • • • • • Product Description pHEMT GaAs MMIC Die Excellent Cross-Modulation Performance 108 dBm Typ @Cellular 106 dBm@AWS
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TQP4M3019
TQP4M3019
12M05019A73
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47146
Abstract: 41146
Text: CFH800 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH800 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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CFH800
OT343
47146
41146
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TAT7467
Abstract: No abstract text available
Text: TAT7467H CATV 75 pHEMT Dual RF Amplifier Applications • Replacement for 5 V SOIC-8 Amplifiers Edge QAM Output Stage MDU Output Distribution Amplifiers Transmitter Driver Amplifier Product Features 75 Ω, 40-1002 MHz Bandwidth
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TAT7467H
TAT7467H
TAT7467
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Untitled
Abstract: No abstract text available
Text: Ka-Band 2W Power Amplifier TGA4516-TS Key Features • • • • • • 30 - 40 GHz Bandwidth > 33 dBm Nominal Psat @ Pin = 20dBm 18 dB Nominal Gain Bias: 6 V, 1050 mA Idq 1.9A under RF Drive 0.15 um 3MI MMW pHEMT Technology Thermal Spreader Dimensions:
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TGA4516-TS
20dBm
TGA4516
TGA45cal
0007-inch
TGA4516-TS
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TAT7469
Abstract: RES_0402
Text: TAT7469 CATV 75 Ω pHEMT Dual RF Amplifier Applications • • • • Edge QAM gain stage MDU Output Distribution amplifiers Node Transimpedance Amplifier Product Features • • • • • SOIC-8 package Functional Block Diagram 75 Ω, 50 MHz to 1200 MHz Bandwidth
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TAT7469
TAT7469
RES_0402
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01248
Abstract: No abstract text available
Text: CFH 400 Preliminary Datasheet Low-Noise, High-Linearity Packaged pHEMT FET Description: The CFH 400 is a high-linearity pHEMT FET that exhibits both a high intercept point and low noise figure. The device is suitable for front-end applications to 4 GHz such as PCS CDMA and
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Untitled
Abstract: No abstract text available
Text: Advance Product Information November 2, 2004 30-38 GHz Balanced Low Noise Amplifier TGA4511-EPU Key Features • • • • • • Preliminary Measured Data Primary Applications Bias Conditions: Vd = 3.5 V, Id = 110 mA 5 Noise Figure dB 0.15 um pHEMT Technology
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet September 27, 2002 TGA4501-SCC 24-31 GHz Ka Band HPA Key Features • 0.25 um pHEMT Technology • 23 dB Nominal Gain • 34.5 dBm Nominal P1dB • 40 dBm IMD3 Typical • Bias 6 V @ 2.1 A Primary Applications • Satellite Ground Terminal
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TGA4501-SCC
TGA4501-SCC
TGA4501
0007-inch
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200177D
Abstract: AS183-92LF
Text: DATA SHEET AS183-92/AS183-92LF: 300 kHz-2.5 GHz pHEMT GaAs SPDT Switch Applications • General purpose medium-power switches in telecommunication applications • Transmit/receive switches in 802.11 b/g WLAN Bluetooth systems Features • IP1dB: +30 dBm typical @ 3 V
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AS183-92/AS183-92LF:
SC-70
J-STD-020)
AS183-92/AS183-92LF
200177D
200177D
AS183-92LF
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Untitled
Abstract: No abstract text available
Text: ALM-2712 GPS Filter-LNA-Filter Front-End Module Data Sheet Description Features Avago Technologies’ ALM-2712 is an ultra low-noise GPS front-end module that combines a low-noise amplifier LNA with GPS FBAR filters. The LNA uses Avago Technologies’ proprietary GaAs Enhancement-mode pHEMT
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ALM-2712
ALM-2712
AV02-2369EN
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Untitled
Abstract: No abstract text available
Text: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses
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SUF-4000
15GHz
10GHz,
88mmx0
SUF-4000
10GHz.
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Untitled
Abstract: No abstract text available
Text: SUF-1000 SUF-1000DC to 20GHz, Cascadable pHEMT MMIC Amplifier DC to 20GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: Die, 0.88mm x 0.75mm Product Description Features RFMD’s SUF-1000 is a monolithically matched high IP3 broadband pHemt MMIC amplifier. The self-biased direct-coupled topology provides exceptional cascadable performance from DC to 20GHz. Its efficient operation
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SUF-1000
SUF-1000DC
20GHz,
SUF-1000
20GHz.
14dBm
DS120220
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ultrasonic bond
Abstract: LMA422 MIL-HDBK-263
Text: LMA422 LOW NOISE PHEMT MMIC • FEATURES ♦ ♦ ♦ ♦ ♦ • 26 GHz to 30 GHz Frequency Band 3.0 dB Noise Figure 22 dB Gain 5 dBm Output Power at Saturation +3 V Single Bias Supply DESCRIPTION AND APPLICATIONS The Filtronic Solid State LMA422 is a low noise PHEMT amplifier that operates from 26 to 30GHz.
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LMA422
LMA422
30GHz.
MIL-STD-1686
MIL-HDBK-263.
ultrasonic bond
MIL-HDBK-263
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LP7512
Abstract: LP7512P70 MIL-HDBK-263 ultra low idss
Text: LP7512P70 PACKAGED ULTRA LOW NOISE PHEMT • FEATURES ♦ 0.7 dB Noise Figure at 12 GHz ♦ 12 dB Associated Gain at 12 GHz ♦ 0.4 dB Noise Figure at 2 GHz ♦ 18 dB Associated Gain at 2 GHz ♦ Low DC Power Consumption: 30mW • DESCRIPTION AND APPLICATIONS
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LP7512P70
LP7512P70
LP7512
MIL-STD-1686
MIL-HDBK-263.
MIL-HDBK-263
ultra low idss
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