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    1mx8

    Abstract: E28F008SA EDI7F4341MC
    Text: EDI7F4341MC 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x1Mx32 The EDI7F4341MC is organized as four banks of 1Mx32. The module is based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Intel's E28F008SA Flash Device


    Original     		PDF EDI7F4341MC 4x1Mx32 4x1Mx32 EDI7F4341MC 1Mx32. E28F008SA 150ns EDI7F4341MC90BNC 1mx8

    Am29F008

    Abstract: AM29LV008T EDI7F4331MV
    Text: White Electronic Designs EDI7F4331MV 4x1Mx32 FLASH MODULE FEATURES „ 4x1Mx32 „ Based on AMD - AM29F008T Flash Device „ Fast Read Access Time - 80ns „ 3.3V Only Reprogramming „ Flexible, Sector Architecture „ „ „ „ Sector Protection „ „ Hardware method that disables any


    Original     		PDF EDI7F4331MV 4x1Mx32 4x1Mx32 AM29F008T EDI7F4331MV 1Mx32. AM29LV008T 16Kbyte, 32Kbyte 64Kbyte Am29F008

    1mx8

    Abstract: AM29LV008T EDI7F4331MV
    Text: EDI7F4331MV 4x1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F4331MV is organized as four banks of 1Mx32. The module is based on AMDs AM29LV008T - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM EDI7F4331MV-BNC: 4x1Mx32 80 PIN SIMM


    Original     		PDF EDI7F4331MV 4x1Mx32 EDI7F4331MV 1Mx32. AM29LV008T EDI7F4331MV-BNC: 150ns A0-A19 4x1Mx32 1mx8

    1mx8

    Abstract: E28F008S3 EDI7F4341MV
    Text: EDI7F4341MV White Electronic Designs 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION  4 x1Mx32 The EDI7F4341MV is organized as four banks of 1Mx32. The module is based on Intel's E28F008S3 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate.


    Original     		PDF EDI7F4341MV 4x1Mx32 x1Mx32 EDI7F4341MV 1Mx32. E28F008S3 120ns 12Vpp 150ns 1mx8

    Am29F008

    Abstract: AM29LV008T EDI7F4331MV AM29F00*8
    Text: White Electronic Designs EDI7F4331MV 4x1Mx32 FLASH MODULE FEATURES n 4x1Mx32 n Based on AMD - AM29F008T Flash Device n Fast Read Access Time - 80ns n 3.3V Only Reprogramming n Flexible, Sector Architecture n n n n Sector Protection n n Hardware method that disables any


    Original     		PDF EDI7F4331MV 4x1Mx32 4x1Mx32 AM29F008T EDI7F4331MV 1Mx32. AM29LV008T 150ns EDI7F4331MV80BNC Am29F008 AM29F00*8

    AM29LV008T

    Abstract: EDI7F4331MV
    Text: EDI7F4331MV 4x1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F4331MV is organized as four banks of 1Mx32. The module is based on AMDs AM29LV008T - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM EDI7F4331MV-BNC: 4x1Mx32 80 PIN SIMM


    Original     		PDF EDI7F4331MV 4x1Mx32 EDI7F4331MV 1Mx32. AM29LV008T EDI7F4331MV-BNC: 150ns A0-A19 4x1Mx32

    Untitled

    Abstract: No abstract text available
    Text: EDI7F4341MC White Electronic Designs 4x1Mx32 FLASH MODULE FEATURES  4x1Mx32  Based on Intel's E28F008SA Flash Device  Fast Read Access Time - 90ns  5V - Only Reprogramming  Low Power Dissipation DESCRIPTION The EDI7F4341MC is organized as four banks of 1Mx32.


    Original     		PDF 4x1Mx32 E28F008SA EDI7F4341MC EDI7F4341MC 1Mx32. 150ns EDI7F4341MC90BNC EDI7F4341MC100BNC

    Untitled

    Abstract: No abstract text available
    Text: EDI7F4341MV White Electronic 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION „ 4 x1Mx32 The EDI7F4341MV is organized as four banks of 1Mx32. The module is based on Intel's E28F008S3 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. „ Based on Intel's E28F008S3 Flash Device


    Original     		PDF 4x1Mx32 x1Mx32 E28F008S3 120ns 12Vpp EDI7F4341MV EDI7F4341MV 1Mx32. 150ns

    4MX32

    Abstract: a106a7
    Text: WED3DL324V 4Mx32 SDRAM FEATURES DESCRIPTION n 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. a106a7

    AM29F080

    Abstract: EDI7F4331MC
    Text: White Electronic Designs EDI7F4331MC 4x1Mx32 FLASH MODULE FEATURES n 4x1Mx32 n Based on AMD - AM29F080 Flash Device n Fast Read Access Time - 80ns n 5V Only Reprogramming n Sector Erase Architecture n n n n The module offers access times between 80 and 150ns


    Original     		PDF EDI7F4331MC 4x1Mx32 AM29F080 EDI7F4331MC 1Mx32. 4x1Mx32 150ns EDI7F4331MC90BNC

    AM29F080

    Abstract: EDI7F4331MC
    Text: White Electronic Designs EDI7F4331MC 4x1Mx32 FLASH MODULE FEATURES „ 4x1Mx32 „ Based on AMD - AM29F080 Flash Device „ Fast Read Access Time - 80ns „ 5V Only Reprogramming „ Sector Erase Architecture „ „ „ „ Hardware method that disables any combination of sectors from write or erase


    Original     		PDF EDI7F4331MC 4x1Mx32 EDI7F4331MC 1Mx32. AM29F080 4x1Mx32 150ns EDI7F4331MC90BNC EDI7F4331MC100BNC

    ED07

    Abstract: ED16-23 TMS320C671
    Text: WED3DL328V 8Mx32 SDRAM ADVANCED* FEATURES DESCRIPTION • 53% Space Savings vs. Monolithic Solution The WED3DL328V is an 8Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 8Mx16 SDRAM die mounted on a multi-layer laminate substrate and


    Original     		PDF WED3DL328V 8Mx32 WED3DL328V 4x1Mx32. 8Mx16 TMS320C6000 TMS320C, C6211 ED07 ED16-23 TMS320C671

    1mx8

    Abstract: AM29F080 EDI7F4331MC
    Text: EDI7F4331MC 4x1Mx32 FLASH MODULE DESCRIPTION FIG. 1 The EDI7F4331MC is organized as four banks of 1Mx32. The module is based on AMDs AM29F080 - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. BLOCK DIAGRAM EDI7F4331MC-BNC:4x1Mx32 80 PIN SIMM


    Original     		PDF EDI7F4331MC 4x1Mx32 EDI7F4331MC 1Mx32. AM29F080 EDI7F4331MC-BNC 150ns A0-A19 4x1Mx32 1mx8

    1mx8

    Abstract: E28F008SA EDI7F4341MC A1359
    Text: EDI7F4341MC White Electronic 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION „ 4x1Mx32 „ Based on Intel's E28F008SA Flash Device „ Fast Read Access Time - 90ns „ 5V - Only Reprogramming „ Low Power Dissipation The EDI7F4341MC is organized as four banks of 1Mx32.


    Original     		PDF EDI7F4341MC 4x1Mx32 4x1Mx32 EDI7F4341MC 1Mx32. E28F008SA 150ns EDI7F4341MC90BNC 1mx8 A1359

    bt 2323

    Abstract: d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 4MX32 WED3DL324V10BI
    Text: WED3DL324V White Electronic Designs 4Mx32 SDRAM FEATURES n n n n n n n DESCRIPTION 53% Space Savings vs. Monolithic Solution The WED3DL324V is a 4Mx32 Synchronous DRAM configured as 4x1Mx32. The SDRAM BGA is constructed with two 4Mx16 SDRAM die mounted on a multi-layer


    Original     		PDF WED3DL324V 4Mx32 WED3DL324V 4x1Mx32. 4Mx16 133MHz, 125MHz 100MHz. bt 2323 d 5072 OP 778 4303 303 3200 AP 309 d 5072 transistor 62 AP 804 L 083 WED3DL324V10BI

    24c16 eeprom resetting only circuit diagram and d

    Abstract: a180, transformer atmel 24c16 SAA7322 intel core i3 MOTHERBOARD CIRCUIT diagram mba mini projects SB82371SB TriMedia TM-1000 ATMEL 220 24C16 trimedia tm1300
    Text: INTEGRATED CIRCUITS TM-1300 Media Processor Product Specification Supersedes data of 2000 May 30 File under INTEGRATED CIRCUITS, TR1 2000 Sep 30 Terms and Conditions TERMS AND CONDITIONS Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,


    Original     		PDF TM-1300 24c16 eeprom resetting only circuit diagram and d a180, transformer atmel 24c16 SAA7322 intel core i3 MOTHERBOARD CIRCUIT diagram mba mini projects SB82371SB TriMedia TM-1000 ATMEL 220 24C16 trimedia tm1300

    SAA7322

    Abstract: SB82371SB PNX1300 scott 9316 s/ksmh12/2.27/30/ecg philips semiconductor master book nichols chart applications PNX1300EH PNX1302 marking PNX1302EH/G TM-1000
    Text: INTEGRATED CIRCUITS PNX1300 Series Media Processors Preliminary Specification Supersedes PNX1300 data of 2002 Feb 15 File under INTEGRATED CIRCUITS, TR1 2004 Aug 20 Philips Semiconductors Media Processors 2002 Feb 15 Preliminary Specification PNX1300 Series


    Original     		PDF PNX1300 PNX1300/01/02/11 SAA7322 SB82371SB scott 9316 s/ksmh12/2.27/30/ecg philips semiconductor master book nichols chart applications PNX1300EH PNX1302 marking PNX1302EH/G TM-1000

    1838 ir receiver

    Abstract: Transistor BSX 45-10 IR 1838 3v 24C08 code example assembly kd 2060 transistor Trimedia TM-1300 IR 1838 T Pin number rca cmos handbook SAA7322 SB82371SB
    Text: INTEGRATED CIRCUITS TM-1300 Media Processor Product Specification Supersedes data of 1999 October 21 File under INTEGRATED CIRCUITS, TR1 2000 May 30 Terms and Conditions TERMS AND CONDITIONS Philips Semiconductors and Philips Electronics North America Corporation reserve the right to make changes,


    Original     		PDF TM-1300 1838 ir receiver Transistor BSX 45-10 IR 1838 3v 24C08 code example assembly kd 2060 transistor Trimedia TM-1300 IR 1838 T Pin number rca cmos handbook SAA7322 SB82371SB

    b712 smd

    Abstract: schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell
    Text: SENS P10 Owner : Kevin,Lee Signature : HK,Park Robin,Cho APPROVAL TAURUS MAIN BOARD BA41-10013A PBA:BA92-01563A, SMT:BA92-00563B MP 1.0 - 0321 MARCH,21,2001 CHECK : : : : : : DRAW Model Name PBA Name PCB Code Dev. Step Revision T.R. Date CPU : P-IV Northwood


    Original     		PDF SFD-P10K SCD-P10K24 SDD-P10K8 SRW-P10K8 SFD-P10E SCD-P10E24 SDD-P10E8 SRW-P10E8 2200mA, iEEE1394, b712 smd schematic diagram inverter 2000w IC25N040 MT702 CT712 MHN2200AT R888 SMB diode tp2256 Tp2350 c840 dell

    YTR 816

    Abstract: SB82371SB TM-1000 SEM 2.5.3 eeprom programmer schematic 24c08 MC68HC681 SB82437 SAA7322 Sony Semiconductor Replacement Handbook Trimedia TM-1300 PNX1300
    Text: INTEGRATED CIRCUITS PNX1300 Series Media Processors Preliminary Specification Supersedes PNX1300 data of 2001 Oct 12 File under INTEGRATED CIRCUITS, TR1 2002 Feb 15 Philips Semiconductors Media Processors 2002 Feb 15 Preliminary Specification PNX1300 Series


    Original     		PDF PNX1300 PNX1300/01/02/11 YTR 816 SB82371SB TM-1000 SEM 2.5.3 eeprom programmer schematic 24c08 MC68HC681 SB82437 SAA7322 Sony Semiconductor Replacement Handbook Trimedia TM-1300

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS WPF29160-120G1XX 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) S IM M MODULE PRELIMINARY* FEATURES GENERAL DESCRIPTION • A c c e ss Tim e of 1 20ns The W h ite M icro e le ctro n ics W P F29160-120G 1X X i s a 4 x 1 M x 3 2 ■


    OCR Scan     		PDF WPF29160-120G1XX 16MBYTE 4x1Mx32) F29160-120G 80-pin 60-120G 40-pin

    28F008SA

    Abstract: E28F008SA LH28F008SAT
    Text: a H/HITE /MICROELECTRONICS WPF29160-120G1XX 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) SIM M MODULE PRELIMINARY* FEATURES GENERAL DESCRIPTION • A c c e s s T im e of 1 2 0 n s T h e W h it e M ic r o e le c t r o n ic s W P F 2 9 1 6 0 -1 2 0 G 1 X X is a 4 x 1 M x 3 2


    OCR Scan     		PDF WPF29160-120G1XX 16MBYTE 4x1Mx32) 120ns WPF29041-120G1XI E28F008SA WPF29041-120G1XS LH28F008SAT WPF29160-120G1XX 80-pin 28F008SA E28F008SA LH28F008SAT

    Untitled

    Abstract: No abstract text available
    Text: a WHITE /MICROELECTRONICS 4x1Mx32 5V FLASH S IM M WPF4M32XB-90PSC5 PRELIMINARY* FEATURES • A c c e s s Tim e o f 90ns ■ 1 00,00 0 Erase/P rog ram C ycles ■ Packaging: ■ Organized as four banks o f 1 M x32 • 80-pin SIM M ■ Com m ercial Tem perature Range


    OCR Scan     		PDF 4x1Mx32 WPF4M32XB-90PSC5 80-pin

    odq1

    Abstract: No abstract text available
    Text: a WPF29160-120G1XX WHITE /MICROELECTRONICS 16MBYTE 4x1Mx32 FLASH (5VSupply; 12V Program) SIMM MODULE PRELIM INARY * FEATURES GENERAL DESCRIPTION • Access Tim e of 120ns The W h ite M icroelectronics W PF29160-120G1XX is a 4 x 1M x 3 2 ■ Packaging: bits 80-pin Flash Single In-line M em ory M odule (SIM M ). The


    OCR Scan     		PDF WPF29160-120G1XX 16MBYTE 4x1Mx32) 120ns PF29160-120G1XX 80-pin 40-pin WPF29160-120G1XX odq1