14Q7
Abstract: No abstract text available
Text: K3P4C1000D-D G C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access
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K3P4C1000D-D
/512Kx16)
100ns
K3P4C1000D-DC
42-DIP-600
K3P4C1000D-GC
44-SOP-600
K3P4C1000DD
14Q7
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29F800T
Abstract: 7D000H-7DFFFH SA13 MX29F800T SA10 SA11 SA12
Text: PRELIMINARY MX29F800T/B 8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY FEATURES • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 5.0V only operation for read, erase and program operation • Fast access time: 70/90/120ns • Low power consumption
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MX29F800T/B
1Mx8/512Kx16]
70/90/120ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
JUN/08/2000
DEC/04/2000
FEB/12/2001
29F800T
7D000H-7DFFFH
SA13
MX29F800T
SA10
SA11
SA12
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Untitled
Abstract: No abstract text available
Text: ESMT F25L08PA Flash 8Mbit 1Mx8 3V Only Serial Flash Memory with Dual FEATURES y y Single supply voltage 2.7~3.6V Standard, Dual SPI y Speed - Read max frequency: 33MHz - Fast Read max frequency: 50MHz; 100MHz - Fast Read Dual max frequency: 50MHz / 100MHz
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F25L08PA
33MHz
50MHz;
100MHz
50MHz
100MHz
200MHz
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cmos static ram 1mx8 5v
Abstract: No abstract text available
Text: K5P6480YCM - T085 Document Title Multi-Chip Package MEMORY 64M Bit 8Mx8 Nand Flash Memory / 8M Bit (1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No. History Draft Date Remark 0.0 Initial issue. Nov. 19th 2000 Advanced Information 0.1 -Changed Operating Voltage from 2.4V - 3.0V to 2.7V - 3.3V
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K5P6480YCM
1Mx8/512Kx16)
K5P6480TCM-T085
K5P6480YCM-T085
69-Ball
08MAX
cmos static ram 1mx8 5v
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PC-100
Abstract: PC100 1998
Text: 4M x 72 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 72403sSEM4G19T 168 Pin 4Mx72 SDRAM DIMM Unbuffered, 4k Refresh, 3.3V with SPD Pin Assignment General Description The 72403sSEM4G19T is a 4Mx72 bit, 19 chip, 168 Pin DIMM module consisting of 18 1Mx8x2
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PC-100
PC-100
72403sSEM4G19T
4Mx72
DS681-0
72403sSEM4G19T
PC100 1998
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FM23MLD16
Abstract: 3.3v 1Mx8 static ram high speed
Text: Preliminary FM23MLD16 8Mbit F-RAM Memory Features 8Mbit Ferroelectric Nonvolatile RAM • Organized as 512Kx16 Configurable as 1Mx8 Using /UB, /LB High Endurance 100 Trillion 1014 Read/Writes NoDelay Writes Page Mode Operation to 33MHz
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FM23MLD16
512Kx16
33MHz
512Kx16
FM23MLD16,
C8556953BG1,
FM23MLD16-60-BG
C8556953BG1
FM23MLD16
3.3v 1Mx8 static ram high speed
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29LV800
Abstract: TSOP 48 Pattern
Text: PRELIMINARY MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
MAR/01/2002
APR/18/2002
29LV800
TSOP 48 Pattern
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Flash SIMM 80
Abstract: E28F008SA EDI7F341MC 80pin-SIMM SIMM 80 jedec
Text: EDI7F341MC White Electronic Designs 1Mx32 FLASH MODULE FIG. 1 DESCRIPTION BLOCK DIAGRAMS The EDI7F341MC and EDI7F2341MC are organized as one and two banks of 1Mx32 respectively. The modules are based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages
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EDI7F341MC
1Mx32
EDI7F341MC
EDI7F2341MC
E28F008SA
EDI7F341MC-BNC:
150ns
Flash SIMM 80
80pin-SIMM
SIMM 80 jedec
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HY29F800T
Abstract: PSOP 44 Pattern HY29F800B
Text: HY29F800 8 Megabit 1Mx8/512Kx16 , 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n High Performance – Access times as fast as 55 ns n Low Power Consumption – 20 mA typical active read current in byte
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HY29F800
1Mx8/512Kx16)
HY29F800T
PSOP 44 Pattern
HY29F800B
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1mx8
Abstract: E28F008SA EDI7F4341MC
Text: EDI7F4341MC 4x1Mx32 FLASH MODULE FEATURES DESCRIPTION n 4x1Mx32 The EDI7F4341MC is organized as four banks of 1Mx32. The module is based on Intel's E28F008SA - 1Mx8 Flash device in TSOP packages which are mounted on an FR4 substrate. n Based on Intel's E28F008SA Flash Device
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EDI7F4341MC
4x1Mx32
4x1Mx32
EDI7F4341MC
1Mx32.
E28F008SA
150ns
EDI7F4341MC90BNC
1mx8
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Untitled
Abstract: No abstract text available
Text: K3N4V U 1000D-TC(E) CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)
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1000D-TC
/512Kx16)
100ns
120ns
44-TSOP2-400
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Untitled
Abstract: No abstract text available
Text: K3N4V U 1000D-D(G)C CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 3.3V operation : 100ns(Max.) 3.0V operation : 120ns(Max.)
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1000D-D
/512Kx16)
100ns
120ns
1000D-DC
42-DIP-600
1000D-GC
44-SOP-600
42-DIP-600
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Untitled
Abstract: No abstract text available
Text: KM23V8105D G CMOS MASK ROM 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Random access time/Page Access Time 3.3V Operation : 100/30ns(Max.) 3.0V Operation : 120/40ns(Max.)
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KM23V8105D
/512Kx16)
100/30ns
120/40ns
KM23V8105D
42-DIP-600
KM23V8105DG
44-SOP-600
42-DIP-600)
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV800CT/CB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY and erase operation completion. • Ready/Busy# pin RY/BY# - Provides a hardware method of detecting program or erase operation completion. • Sector protection
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MX29LV800CT/CB
1Mx8/512K
100mA
Se08/2005
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F25L008A
Abstract: BPL TV POWER SUPPLY
Text: ESMT F25L008A Operation Temperature condition -40 °C ~85 °C 8Mbit 1Mx8 3V Only Serial Flash Memory FEATURES y Single supply voltage 2.7~3.6V y Speed - Read max frequency : 33MHz - Fast Read max frequency : 50MHz; 100MHz y Low power consumption - typical active current
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F25L008A
33MHz
50MHz;
100MHz
F25L008A
BPL TV POWER SUPPLY
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29LV800-70R
Abstract: No abstract text available
Text: ADVANCE INFORMATION MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
1Mx8/512K
70/90ns
7us/12us
16K-Bytex1,
32K-Bytex1,
64K-Byte
specifieJUN/28/2000
OCT/24/2000
DEC/19/2000
29LV800-70R
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29LV800
Abstract: No abstract text available
Text: MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
MX29LV800AT/AB)
100mA
44-pin
48-pin
48-p36
SEP/13/2002
NOV/19/2002
29LV800
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Untitled
Abstract: No abstract text available
Text: MX29LV800T/B & MX29LV800AT/AB FEATURES 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
MX29LV800AT/AB
1Mx8/512K
MX29LV800AT/AB)
100mA
44-pin
48-pin
48-p2002
APR/11/2003
NOV/03/2003
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Untitled
Abstract: No abstract text available
Text: IS62WV10248EALL/BLL IS65WV10248EALL/BLL PRELIMINARY INFORMATION JULY 2014 1Mx8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM KEY FEATURES • High-speed access time: 45ns, 55ns CMOS low power operation – 36 mW typical operating – 12 µW (typical) CMOS standby
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IS62WV10248EALL/BLL
IS65WV10248EALL/BLL
62/65WV10248EALL)
62/65WV10248EBLL)
IS62WV10248EALL/
IS62WV10248EBLL
IS62WV10248EBLL-55TLI
IS62WV10248EBLL-55BI
IS62WV10248EBLL-55BLI
IS62WV10248EBLL-45TLI
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY MX29LV800T/B 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY FEATURES • Extended single - supply voltage range 2.7V to 3.6V • 1,048,576 x 8/524,288 x 16 switchable • Single power supply operation - 3.0V only operation for read, erase and program
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MX29LV800T/B
1Mx8/512K
70/90ns
9us/11us
16K-Bytex1,
32K-Bytex1,
64K-Byte
NOV/23/2001
JAN/24/2002
MAR/01/2002
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KM23V8100D
Abstract: KM23V8100DET KM23V8100DT
Text: CM OS M ASK ROM KM23V81 OOD E T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES G ENERAL DESCRIPTION • S w itc h a b le o rg a n iz a tio n 1 ,0 4 8 ,5 7 6 x 8 (b y te m o d e ) 5 2 4 ,2 8 8 x 16 (w ord m o de) • F a st a c c e s s tim e : 3 .3 V o p e ra tio n : 1 0 0 n s (M a x .)
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KM23V81
/512Kx16)
100ns
120ns
KM23V8100D
44-TSQP2-400
KM23V8100DET
KM23V8100DT
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Untitled
Abstract: No abstract text available
Text: A Advance information •■ AS29LV800 3V 1MX8/512KX16 CMOS Flash EEPROM Features • Organization: 1Mx 8/512K x 16 • Scctor architecture - One 16K; two 8K; one 32K; and fifteen 64Kbyte sectors - One 8K; two 4K; one 16K; and fifteen 32Kword sectors - Boot code sector architecture—T top or B (bottom)
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AS29LV800
1MX8/512KX16
8/512K
64Kbyte
32Kword
write/S29LV800T-120SI
AS29LV800T-150SC
AS29LV800T-150SI
AS29IV800B-80SC
AS29D/800B-80SI
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Untitled
Abstract: No abstract text available
Text: W PF 1 M 3 2 X -9 0 P SC 5 1Mx32 FLASH SIMM PRELIMINARY * FEATURES • ■ Access Time of 90ns ■ 100,000 Erase/Program Cycles Packaging: ■ Organized as 1Mx32 • 80-pin SIM M ■ Commercial Tem perature Range • The module is manufactured w ith four 1Mx8 CMOS flash
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1Mx32
80-pin
Am29F080
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M6M80011AL
Abstract: m6m80011 M6M80021FP 48P3R-B M6M80041P M5M28FB800VP-12 M6M80011AFP
Text: O R IE S • F L A S H MEMORIES CONTINUED Memory capacity Memory Configuration Power supply vottage Max. access «m e . Remarks Typ. power dissipation (mW) T w » No. (ml 51 2K X 1 6/ 1Mx8 ÍBGO) V cc = 2.7 to 3 .6 V V pp = 5 ± 0 .5 V (Dual power supply)
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32Kwordxl5.
10mmX
M5M28FB800VP-12!
M5M29FB/T008AVP-12V
40P3J-A
M5M29F016Fal
M5M29F6400ATP
48PIN
C/-20
M6M80011AL
M6M80011AL
m6m80011
M6M80021FP
48P3R-B
M6M80041P
M5M28FB800VP-12
M6M80011AFP
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