71c464
Abstract: GoldStar gm71c464 GM71C464-80 GM71C464-10 GM71C464-12 GM71C464
Text: GOLDSTAR TECHNOLOGY I N C / 4Q2A757 G0G31Û7 T « G S T 34E » PRODUCT SPECIFICATION T ~ ¥ 6 'Z 3 ~ / 7 G M 71C 464 65.536WORDS X 4 BIT CMOS DYNAMIC RAM Description The GM71C464 is a high speed dynamic RAM or ganized 65,536 x 4 Bit. The GM71C464 utilizes
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4Q2A757
G0G31
536WORDS
GM71C464
330mW
GM71C464-80)
247mW
GM71C464-12)
71c464
GoldStar gm71c464
GM71C464-80
GM71C464-10
GM71C464-12
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GDD7235
Abstract: ov 724b 0D07B
Text: LG Semicon. Co. LTD Description Features The GMM7402000ES/SG is a 2M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of lM x 4 bit DRAMs in 20/26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g
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GMM7402000ES/SG
7402000ES/SG
GMM7402000ES/SG
GMM7402000ES
GMM7402000ESG
Sup50
1111I
R62C1
GDD7235
ov 724b
0D07B
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71C S 16160B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bits. GM71C(S)16160B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process tech n o lo gy. The
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GM71C
16160B/BL
42SOJ
GGQ4C544
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GM71CI7400
Abstract: 402u gm71c17400bj GM71C17400 17400BJ gm71c17400b
Text: @ LG Semicon. Co. LTD Description Features The GM71C17400B/BL is the new generation dynamic RAM organized 4,194,304 words x 4 Bit. GM71C17400B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The GM71C17400B/BL offers Fast
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GM71C17400B/BL
Cl7400B/BL
300mil
DDD5D42
GM71CI7400
402u
gm71c17400bj
GM71C17400
17400BJ
gm71c17400b
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
D0Qb212
GMM7321000AN
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GM71C4400BJ
Abstract: GM71C4400 GM71C1000 GM71C4 GMM791000
Text: @ LG Semicon. Co. LTD. Description Features The GMM791000BNS is an 1M x 9 bits Dynamic RAM Module which is assembled 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin SOJ package and 1M bit DRAM (GM71C1000BJ, lM x l) in 20 pin SOJ package. The GMM791000BNS is a
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GMM791000BNS
GM71C4400BJ,
GM71C1000BJ,
GMM791000BNS
GM71C4400BJ
GM71C4400
GM71C1000
GM71C4
GMM791000
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD Description Features The GM71V S 18163A/AL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71V(S)18163A/AL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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8163A/AL
42pin
400mil
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Untitled
Abstract: No abstract text available
Text: # GM71V16403C GM71VS16403CL LG Semican Go Ltd LA3 o tS fT IIC U n W U .,L ,iU . CMOS DYNAMIC RAM Description Features The GM71V S 16403 C/CL is the new generation dynamic RAM organized 4,194,304 words x 4 bit. GM71V(S)16403C/CL has realized higher density, higher performance and
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GM71V16403C
GM71VS16403CL
GM71V
16403C/CL
16403C/CL
402B7S7
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GMM7321000AN
Abstract: No abstract text available
Text: _ ü _ LG Semicon. Co. LTD Description Features The GMM7321000ANS/SG is an 1M x 32 bits Dynamic RAM MODULE which is assembled 2 pieces of 1M x 16bit DRAMs in 42 pin SOJ package on single sides the printed circuit board with decoupling capacitors. The GMM7321000ANS/SG is
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GMM7321000ANS/SG
16bit
GMM7321000ANS/SG
GMM7321OOOANS
-GMM7321000ANSG
8888888m
GMM7321000AN
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GM71C4400
Abstract: DLT80
Text: @ LG Semicon. Co. LTD Description Features The GM71C4400D/DL is the new generation, dynam ic R A M o rg an ized 1,048,576 x 4 b it. GM71C4400D/DL has realized higher density, higher performance and various functions by utilizing a d v a n c e d CM OS p ro c e s s te c h n o lo g y . The
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GM71C4400D/DL
300mil
20pin
GM71C4400
DLT80
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GM71V17803BJ6
Abstract: fl37 IRAD GM71V17803BJ7
Text: @ LG Semicon. Co. LTD. Description Features The GM71V S 17803B/BL is the new generation dynamic RAM organized 2,097,152 words x 8 bit. GM71V(S)17803B/BL has realized higher density, higher perform ance and various functions by utilizing advanced CMOS process technology. The
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GM71V
17803B/BL
28pin
400mil
GM71V17803BJ6
fl37
IRAD
GM71V17803BJ7
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