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    4MX4 DRAM SIMM Search Results

    4MX4 DRAM SIMM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    UPD48011318FF-FH16-FF1-A Renesas Electronics Corporation Low Latency DRAM, T-LBGA, /Tray Visit Renesas Electronics Corporation

    4MX4 DRAM SIMM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3660QG Description Placement The TS4M3660QG is a 4M by 36-bit dynamic RAM module with 8pcs of 4Mx4 DRAMs and one 4Mx4 B QuadCAS DRAM assembled on the printed circuit board. C The TS4M3660QG is optimized for application to


    Original     		PDF TS4M3660QG TS4M3660QG 36-bit TS4M3660Q

    Untitled

    Abstract: No abstract text available
    Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3660Q  Description Features The TS4M3660Q is a 4M by 36-bit dynamic RAM module • 4,194,304-word by 36-bit organization. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Fast Page Mode operation. DRAM assembled on the printed circuit board.


    Original     		PDF TS4M3660Q TS4M3660Q 36-bit 304-word TS4M3660Q

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620812CW0/CB0 M53620812CW0/CB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812C


    Original     		PDF M53620812CW0/CB0 M53620812CW0/CB0 M53620812C 8Mx36bits M53620812C 24-pin 28-pin 72-pin M53620812CW0

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620812DW0/DB0 M53620812DW0/DB0 with Fast Page Mode 8M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620812D is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53620812D


    Original     		PDF M53620812DW0/DB0 M53620812DW0/DB0 M53620812D 8Mx36bits M53620812D 24-pin 28-pin 72-pin M53620812DW0

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640812CW0/CB0 M53640812CW0/CB0 with EDO Mode 8M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640812C is a 8Mx36bits Dynamic RAM high density memory module. The Samsung M53640812C


    Original     		PDF M53640812CW0/CB0 M53640812CW0/CB0 M53640812C 8Mx36bits M53640812C 24-pin 28-pin 72-pin M53640812CW0

    c60 equivalent

    Abstract: dram 4mx4 kmm5364
    Text: DRAM MODULE M53620412CW0/CB0 M53620412CW0/CB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412C


    Original     		PDF M53620412CW0/CB0 M53620412CW0/CB0 M53620412C 4Mx36bits M53620412C 24-pin 28-pin 72-pin M53620412CW0 c60 equivalent dram 4mx4 kmm5364

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620412DW0/DB0 M53620412DW0/DB0 with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 FP and 4Mx4 Quad CAS, 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53620412D is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53620412D


    Original     		PDF M53620412DW0/DB0 M53620412DW0/DB0 M53620412D 4Mx36bits M53620412D 24-pin 28-pin 72-pin M53620412DW0

    64mb edo dram simm

    Abstract: K4E160411C
    Text: DRAM MODULE M53640412CW0/CB0 M53640412CW0/CB0 Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 EDO and 4Mx4 Quad CAS, 2K, Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53640412C is a 4Mx36bits Dynamic RAM high density memory module. The Samsung M53640412C


    Original     		PDF M53640412CW0/CB0 M53640412CW0/CB0 M53640412C 4Mx36bits M53640412C 24-pin 28-pin 72-pin M53640412CW0 64mb edo dram simm K4E160411C

    Untitled

    Abstract: No abstract text available
    Text: 16MB 72 PIN FPM DRAM SIMM With 4Mx4+4Mx1 5VOLT TS4M3660G  Description The TS4M3660G is a 4M by 36-bit dynamic RAM Features module with 8pcs of 4Mx4 DRAMs and 4pcs of 4Mx1 • 4,194,304-word by 36-bit organization. DRAM assembled on the printed circuit board.


    Original     		PDF TS4M3660G TS4M3660G 36-bit 304-word TS4M3660G

    Untitled

    Abstract: No abstract text available
    Text: 72PIN FAST PAGE SIMM 16MB With 4Mx4 60ns TS4M3660QG Description Features The TS4M3660QG is a 4M by 36-bit dynamic RAM module • Fast Page Mode operation. with 8pcs of 4Mx4 DRAMs and one 4Mx4 QuadCAS • Single +5.0V ± 10% power supply. DRAM assembled on the printed circuit board.


    Original     		PDF 72PIN TS4M3660QG TS4M3660QG 36-bit

    KMM5364005CSW

    Abstract: KMM5364005CSWG
    Text: DRAM MODULE KMM5364005CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5364005CSW/CSWG 4Mx36 4Mx16 KMM5364005CSW/CSWG KMM5364005C 4Mx36bits KMM5364005C KMM5364005CSW KMM5364005CSWG

    4Mx4 dram simm

    Abstract: 4MX36 4Mx4 2 CHIP dram simm 72 simm function 4Mx4 fpm dram 30 simm
    Text: 4M x 36 Bit 5V FPM SIMM Fast Page Mode FPM DRAM SIMM 364006-S52m09JA 72 Pin 4Mx36 FPM SIMM Unbuffered, 2k Refresh, 5V Pin Assignment General Description The module is a 4Mx36 bit, 9 chip, 5V, 72 Pin SIMM module consisting of (8) 4Mx4 (SOJ) and (1) 4Mx4 (SOJ, Quad CAS) DRAM. The module is


    Original     		PDF 364006-S52m09JA 4Mx36 DS527-15f 4Mx4 dram simm 4Mx4 2 CHIP dram simm 72 simm function 4Mx4 fpm dram 30 simm

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368003CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368003CSW/CSWG 8Mx36 4Mx16 KMM5368003CSW/CSWG KMM5368003C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5368005CSW/CSWG 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5368005CSW/CSWG DRAM MODULE


    Original     		PDF KMM5368005CSW/CSWG 8Mx36 4Mx16 KMM5368005CSW/CSWG KMM5368005C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620805CY0/CT0-C DRAM MODULE


    Original     		PDF M53620805CY0/CT0-C 8Mx36 4Mx16 M53620805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53620405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53620405CY0/CT0-C DRAM MODULE


    Original     		PDF M53620405CY0/CT0-C 4Mx36 4Mx16 M53620405CY0/CT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640405CY0/CT0-C 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640405CY0/CT0-C DRAM MODULE


    Original     		PDF M53640405CY0/CT0-C 4Mx36 4Mx16 M53640405CY0/CT0-C 4Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE M53640805CY0/CT0-C 4Byte 8Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. M53640805CY0/CT0-C DRAM MODULE


    Original     		PDF M53640805CY0/CT0-C 8Mx36 4Mx16 M53640805CY0/CT0-C 8Mx36bits

    Untitled

    Abstract: No abstract text available
    Text: 16MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS4M3260 Description Features The TS4M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 8 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.


    Original     		PDF TS4M3260 TS4M3260 32-bit

    we 510

    Abstract: No abstract text available
    Text: UG18M83602KBT-6AT 32M Bytes 8M x 36 DRAM 72Pin SIMM w/Parity based on 4M X 4 General Description Features The UG18M83602KBT-6AT is a 8,388,608 bits by 36 SIMM module. The UG18M83602KBT-6AT is assembled using 16 pcs of 4Mx4 2K refresh DRAMs 2 pcs of 4Mx4


    Original     		PDF UG18M83602KBT-6AT 72Pin UG18M83602KBT-6AT 1000mil) we 510

    Untitled

    Abstract: No abstract text available
    Text: 16MB 72 PIN EDO DRAM SIMM With 4Mx4 5VOLT  TS4MED3260G  Description Features The TS4MED3260G is a 4M by 32-bit dynamic RAM • 4,194,304-word by 32-bit organization. module with 8 pcs of 4Mx4 DRAMs assembled on the • Fast Page Mode with Extended Data Out


    Original     		PDF TS4MED3260G TS4MED3260G 32-bit 304-word TS4MED3260G

    Untitled

    Abstract: No abstract text available
    Text: 32MB 72 PIN FAST PAGE DRAM SIMM With 4Mx4 5VOLT TS8M3260  Description Features The TS8M3260 is a 4M by 32-bit dynamic RAM module • Fast Page Mode Operation. with 16 pcs of 4Mx4 DRAMs assembled on the printed • Single +5.0V ± 10% power supply. circuit board.


    Original     		PDF TS8M3260 TS8M3260 32-bit TS8M3260

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M53210400DW0/DB0 M53210410DW0/DB0 DRAM MODULE M53210400DW0/DB0 & M53210410DW0/DB0 Fast Page Mode 4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M5321040 1 0D is a 4Mx32bits Dynamic RAM • Part Identification


    Original     		PDF M53210400DW0/DB0 M53210410DW0/DB0 M53210400DW0/DB0 M53210410DW0/DB0 M5321040 4Mx32bits 24-pin 72-pin

    KMM5364003BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


    Original     		PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG 4Mx16 KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003BSW