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    Samsung Semiconductor KMM5364103BK-6U

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    Bristol Electronics KMM5364103BK-6U 1
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    Samsung Semiconductor KMM5364100A-7

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    Samsung Semiconductor KMM5364005ASWG-6

    4MX36 EDO DRAM MODULE, 60NS, SMA72
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    Quest Components KMM5364005ASWG-6 68
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    Samsung Semiconductor KMM5364100-7

    DRAM Memory Module, Fast Page Type, 4M x 36, 72 Pin, Plastic, SSIM
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    Quest Components KMM5364100-7 1
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    KMM5364 Datasheets (38)

    Part ECAD Model Manufacturer Description Curated Type PDF
    KMM5364003BSW Samsung Electronics 4MB x 36 DRAM Simm Using 4MB x 16 & Quad Cas 4MB x 4 Original PDF
    KMM5364003BSW-5 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003BSW-6 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003BSWG-5 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003BSWG-6 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad Inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CK-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CK-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CKG Samsung Electronics 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS 4K/2K Refresh 5V Original PDF
    KMM5364003CKG-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CKG-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K Refresh, 5V Original PDF
    KMM5364003CSW-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSW-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSWG Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4 4K Refresh 5V Original PDF
    KMM5364003CSWG-5 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364003CSWG-6 Samsung Electronics Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364005BSW-5 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364005BSW-6 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364005BSWG-5 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364005BSWG-6 Samsung Electronics 4M x 36 DRAM SIMM Using 4Mx16 & Quad inverted CAS 4Mx4, 4K Refresh, 5V Original PDF
    KMM5364005CK-5 Samsung Electronics Fast Page Mode with EDO Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K, Refresh, 5V Original PDF

    KMM5364 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KMM5364003CSW

    Abstract: KMM5364003CSWG
    Text: DRAM MODULE KMM5364003CSW/CSWG 4Byte 4Mx36 SIMM 4Mx16 & Quad CAS 4Mx4 base Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) • The 4th. generation of 64Mb DRAM components are applied for this module. KMM5364003CSW/CSWG DRAM MODULE


    Original     		PDF KMM5364003CSW/CSWG 4Mx36 4Mx16 KMM5364003CSW/CSWG KMM5364003C 4Mx36bits KMM5364003C KMM5364003CSW KMM5364003CSWG

    KMM5364003BSW

    Abstract: No abstract text available
    Text: DRAM MODULE KMM5364003BSW/BSWG KMM5364003BSW/BSWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364003B


    Original     		PDF KMM5364003BSW/BSWG KMM5364003BSW/BSWG 4Mx16 KMM5364003B 4Mx36bits KMM5364003B 4Mx16bits 72-pin KMM5364003BSW

    KMM5364005BSW

    Abstract: KMM5364005BSWG
    Text: DRAM MODULE KMM5364005BSW/BSWG KMM5364005BSW/BSWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005B is a 4Mx36bits Dynamic RAM high density memory module. The Samsung KMM5364005B consists of two CMOS 4Mx16bits and one CMOS Quad CAS


    Original     		PDF KMM5364005BSW/BSWG KMM5364005BSW/BSWG 4Mx16 KMM5364005B 4Mx36bits KMM5364005B 4Mx16bits 72-pin KMM5364005BSW KMM5364005BSWG

    KMM5364003CK

    Abstract: KMM5364003CKG KMM5364103CK KMM5364103CKG
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE 4Byte 4Mx36 SIMM 4Mx4 & 16M Quad CAS base Revision 0.1 Nov. 1997 DRAM MODULE KMM5364003CK/CKG KMM5364103CK/CKG Revision History Version 0.1 (Nov. 1997) • Changed the mode of parity check component from EDO to FP, refer to


    Original     		PDF KMM5364003CK/CKG KMM5364103CK/CKG 4Mx36 KMM5364103CK/CKG KMM53640 KMM5364003CK KMM5364003CKG KMM5364103CK KMM5364103CKG

    Untitled

    Abstract: No abstract text available
    Text: SAM S UN G E L E C T R O N I C S INC b?E 3 WÊ 7 ^ b 4 m 2 DGlSeflG b7E • SMGK DRAM MODULES KMM5364000H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: KMM5364000H-6 • • • • • • • tflA C tcA C Í rc 60ns 15ns


    OCR Scan     		PDF KMM5364000H/HG KMM5364000H-6 M5364000H-7 130ns KMM5364000H-8 KMM5364000H 24-pin 72-pin 150ns

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC h?E D • 7 ^ 4 1 4 2 D 0 1 5 2 7 M 37=5 ■ SI'IGK KMM5364100H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM5364100H-6 tR A C tc A c Irc 60ns 15ns 110ns KMM5364100H-7 70ns 20ns


    OCR Scan     		PDF KMM5364100H/HG KMM5364100H-6 KMM5364100H 24-pin 72-pin 22/xF 110ns KMM5364100H-7 130ns

    ic 74142

    Abstract: No abstract text available
    Text: Preliminary KMM5364003ASW/ASWG DRAM MODULE KMM5364003ASW/ASWG Fast Page Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364003A is a 4Mx36bits Dynamic RAM ~ Part Identification high density memory module. The Samsung KMM5364003A


    OCR Scan     		PDF KMM5364003ASW/ASWG KMM5364003ASW/ASWG 4Mx16 KMM5364003A 4Mx36bits 4Mx16bits 72-pin KMM5364003ASW ic 74142

    Untitled

    Abstract: No abstract text available
    Text: KMM5364003CK/CKG KMM5364103CK/CKG DRAM MODULE KMM5364003CK/CKG & KMM5364103CK/CKG with Fast Page Mode 4M x 36 DRAM SIMM using 4Mx4 and 16M Quad CAS, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES T he S am su ng K M M 53640 1 03 C K is a 4 M x3 6 b its RAM


    OCR Scan     		PDF KMM5364003CK/CKG KMM5364103CK/CKG KMM5364003CK/CKG KMM5364103CK/CKG

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh, 5V Using 16M Quad CAS DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5364103AK is a 8M bit x 36 Dynamic RAM high density memory module using Parity with 16M Quad CAS DRAM. The Samsung


    OCR Scan     		PDF KMM5364103AK/AKG 4Mx36 KMM5364103AK 24-pin 20-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364000AH Fast Page Mode 4Mx36 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5364000AH is a 4M bit x 36 Dynamic RAM high density memory module. The • Performance Range:


    OCR Scan     		PDF KMM5364000AH 4Mx36 24-pin 72-pin

    KM416C4104AS

    Abstract: KM416C4104a KM44C4005BS
    Text: Preliminary KMM5364005ASW/ASWG DRAM MODULE KMM5364005ASW/ASWG EDO Mode 4M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5364005A is a 4Mx36bits Dynamic RAM - Part Identification high density memory module. The Samsung KMM5364005A


    OCR Scan     		PDF KMM5364005ASW/ASWG KMM5364005ASW/ASWG 4Mx16 KMM5364005A 4Mx36bits 4Mx16bits 72-pin KMM5364005ASW KM416C4104AS KM416C4104a KM44C4005BS

    Untitled

    Abstract: No abstract text available
    Text: KMM5364003BK/BKG DRAM KMM5364103BK/BKG KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG G EN ER AL DESC RIPTIO N The Samsung KMM53640 1 03BK is a 4M bit x 36


    OCR Scan     		PDF KMM5364003BK/BKG KMM5364103BK/BKG KMM5364103AK/AKG 4Mx36 300mil KMM53640 24-pin 28-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L DES C R IPTIO N FEATURES The Samsung KMM5364100AH is a 4M bit x 36 Dynamic HAM high density memory module. The Samsung KMM5364100AH consists of nine CMOS


    OCR Scan     		PDF KMM53641OOAH 4Mx36 KMM5364100AH 24-pin 72-pin

    samsung pram

    Abstract: No abstract text available
    Text: PRAM MODULE / _16 Mega Byte 77 KMM5364000C/CG Fast Page Mode 4Mx36 DRAM SIMM Using 4Mx1 DRAM, 5V ^ GENERAL DESCRIPTION FEATURES The Samsung KMM5364000C is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364000C consists of thirty six CMOS


    OCR Scan     		PDF KMM5364000C/CG 4Mx36 KMM5364000C 110ns 130ns 150ns samsung pram

    Untitled

    Abstract: No abstract text available
    Text: KMM5364000H/HG DRAM MODULES 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC KMM5364000H-6 60ns 15ns KMM5364000H-7 70ns 2 0 ns 130ns KMM5364000H-8 80ns 2 0 ns 150ns The Samsung KMM5364000H is a 4M bits x 36 Dynam­


    OCR Scan     		PDF KMM5364000H/HG KMM5364000H-6 KMM5364000H-7 KMM5364000H-8 130ns 150ns KMM5364000H 24-pin 72-pin

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM53641OOAKH Fast Page Mode 4Mx36 DRAM SIMM, 2K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM53641 OOAKH is a 4M bit x 36 Dynamic RAM high density memory module The Samsung KMM53641 OOAKH consists of nine CMOS


    OCR Scan     		PDF KMM53641OOAKH 4Mx36 KMM53641 24-pin 72-pin KMM5364100AKH

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A/AG Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN ERA L D ESC RIPTIO N FEATURES • Performance Range' The Sam sung K M M 5364100A is a 4M bit x 36 D ynam ic RAM high density m em ory module. The


    OCR Scan     		PDF KMM5364100A/AG 4Mx36 364100A 24-pin 20-pin 72-pin KMM5364100A

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULES KMM5364100H/HG 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tcAC tRC 15ns 110ns KMM5364100H-7 70ns 20ns 130ns KMM5364100H-8 80ns 20ns 150ns The KMM5364100H is a S ingle In-line M em ory M odule w ith edge connections and is intended fo r m ounting into


    OCR Scan     		PDF KMM5364100H/HG KMM5364100H-6 KMM5364100H-7 KMM5364100H-8 110ns 130ns 150ns KMM5364100H

    bas 33 equivalent

    Abstract: km44c4105bk EZ 720 kmm5364105bk
    Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES • Part Identification The Samsung KM M 53640 1 05BK is a 4M bit x 36


    OCR Scan     		PDF KMM5364005BK/BKG KMM5364105BK/BKG KMM5364005BK/BKG KMM5364105BK/BKG 4Mx36 KMM53640 24-pin 28-pin 72-pin bas 33 equivalent km44c4105bk EZ 720 kmm5364105bk

    KMM5364100-7

    Abstract: Ras 1220
    Text: DRAM MODULES KMM5364100/G 4M X 36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5364100 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100 consist of eight CMOS 4M x 4 bit DRAMs in 24-pin SOJ packages and four CMOS 4 M x 1 bit


    OCR Scan     		PDF KMM5364100/G KMM5364100 24-pin 20-pin 72-pin KMM5364100-6 KMM5364100-7 KMM5354100-8 Ras 1220

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364000AKH Fast Page Mode P r e lim in a r v n R a m SIMM c i m m , 4K a \c n o f r o c h c:\/ 4Mx36 DRAM Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION p r e lim in a r y FEATURES • Performance Range: The Sam sung KM M 5364000AKH is a 4M bit x 36


    OCR Scan     		PDF 4Mx36 5364000AKH KMM5364000AKH 24-pin KMM53640If

    KM41C4000CJ

    Abstract: No abstract text available
    Text: DRAM MODULE 16 Mega Byte KMM5364100A1 /A1G Fast Page Mode 4Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DES C R IPTIO N FEATURES The Samsung KMM5364100A1 is a 4M bit x 36 Dynamic RAM high density memory module. The Samsung KMM5364100A1 consists of eight CMOS


    OCR Scan     		PDF KMM5364100A1 4Mx36 24-pin 20-pin 72-pin KM41C4000CJ

    Untitled

    Abstract: No abstract text available
    Text: KMM5364005BK/BKG KMM5364105BK/BKG DRAM MODULE KMM5364005BK/BKG & KMM5364105BK/BKG Fast Page with EDO Mode 4Mx36 DRAM SIMM, 4K & 2K Refresh, using 16M Quad CAS EDO DRAM GENERAL DESCRIPTION FEATURES The Samsung KM M 53640 1 05BK is a 4M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5364005BK/BKG KMM5364105BK/BKG KMM5364105BK/BKG 4Mx36 KMM5364005BK cycles/64ms KMM53640 KMM5364005BKG

    A1KA

    Abstract: KMM5364103BK
    Text: KMM5364003BK/BKG KMM5364103BK/BKG DRAM MODULE KMM5364003BK/BKG & KMM5364103AK/AKG Fast Page Mode 4Mx36 DRAM SIMM, 4K & 2K Ref, using 16M Quad CAS DRAM with 300mil PKG GENERAL DESCRIPTION FEATURES The Sam sung K M M 53640 1 03BK is a 4M bit x 36 • Part Identification


    OCR Scan     		PDF KMM5364003BK/BKG KMM5364103BK/BKG KMM5364003BK/BKG KMM5364103AK/AKG 4Mx36 300mil 24-pin 28-pin 72-pin KMM53640 A1KA KMM5364103BK