AN2011
Abstract: M50LPW040 J-STD-020B M50FLW040A M50FLW040B PLCC32 TSOP32 low pin count lpc
Text: AN2011 APPLICATION NOTE Replacing the M50LPW040 by the M50FLW040A or M50FLW040B in your Application STMicroelectronics is constantly improving its technology. The 4Mbit M50LPW040 Flash Memory for BIOS storage is being upgraded from the 0.18µm T7X fabrication process to the new 0.15µm T7Y process. This upgrade is in line with ST’s declared commitment to support the growth of our customers on a
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AN2011
M50LPW040
M50FLW040A
M50FLW040B
M50FLW040A
AN2011
J-STD-020B
PLCC32
TSOP32
low pin count lpc
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M29W040
Abstract: M39432 4Mbit eeprom
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
EEPR0-A18
120ns
150ns
200ns
250ns
TSOP40
M29W040
4Mbit eeprom
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intel pa28f400
Abstract: AN907 AN907 applications E28F002BV-T M28F210 M28F211 M28F221 M28W231 28F400BV-B pa28f400
Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash
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AN907
intel pa28f400
AN907
AN907 applications
E28F002BV-T
M28F210
M28F211
M28F221
M28W231
28F400BV-B
pa28f400
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intel pa28f400
Abstract: AN907 AN907 applications
Text: AN907 APPLICATION NOTE COMPATIBILITY BETWEEN ST BOOT BLOCK AND INTEL SMARTVOLTAGE FLASH MEMORIES by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash
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AN907
intel pa28f400
AN907 applications
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intel pa28f400
Abstract: AN907 M28F220 programming codes M28F210 M28F211 M28F410 M28F411 M28F420 M28W231
Text: AN907 APPLICATION NOTE Compatibility between St Boot Block and Intel SmartVoltage Flash Memories by Patrick PIGNON INTRODUCTION Flash memory is proving to be a popular choice for the storage of information which is to be updated in-circuit at a later time after production. The larger capacity available and lower cost with the Flash
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AN907
intel pa28f400
AN907
M28F220
programming codes
M28F210
M28F211
M28F410
M28F411
M28F420
M28W231
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4mbit eprom
Abstract: 4Mbit eeprom 4mbit otp M29W040 M39432 AI01946
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory DATA BRIEFING 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
120ns
150ns
200ns
250ns
TSOP40
AI01947
4mbit eprom
4Mbit eeprom
4mbit otp
M29W040
AI01946
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M29W040
Abstract: M39432
Text: M39432 SINGLE CHIP 4 Megabit FLASH and 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME FLASH and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read FLASH while
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M39432
120ns
M39432
M29W040
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toshiba toggle mode nand
Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit
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64M128M
66MHz
100MHz
200MHz)
500/600MHz
800MHz
400MHz
800MHz)
X16/X18X32
PhotoPC550
toshiba toggle mode nand
TC518128
TC518129
TC551001 equivalent
551664
TC518512
sgs-thomson power supply
Toggle DDR NAND flash
jeida 38 norm
APPLE A5 CHIP
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M29W040
Abstract: M39432 AI02028
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS 120ns ACCESS TIME Flash and EEPROM blocks WRITE, PROGRAM and ERASE STATUS BITS CONCURRENT MODE (Read Flash while writing to EEPROM)
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M39432
120ns
M39432
M29W040
AI02028
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HY-05 HYCOM
Abstract: STR G 6351 HY-05 conector usb PCB pci riser schematics 16x32 edo ram 64mb HY-05 HYCOM input id STR G 6352 pentium 4 motherboard schematic diagram ide HYCOM
Text: D Intel 430TX PCIset Desktop Design Guide June 1997 297739-001 Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and
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430TX
RI822S09SC
SM3216
1/16W
SCREW-4-40
SI9933DYS
SK168DIMVLTB
168-pin
SK321PGAZIF
PGA321
HY-05 HYCOM
STR G 6351
HY-05
conector usb PCB
pci riser schematics
16x32 edo ram 64mb
HY-05 HYCOM input id
STR G 6352
pentium 4 motherboard schematic diagram ide
HYCOM
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PAL 007 pioneer
Abstract: pioneer PAL 007 A PAL 008 pioneer sn 7600 n 648-0482211 sem 2106 Trays tsop56 TSOP 86 land pattern amd socket 940 pinout Meritec 980020-56
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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pioneer PAL 007 A
Abstract: PAL 007 pioneer str 6654 PAL 008 pioneer pin details of str W 6654 sem 2106 Yamaichi Electronics ic197 648-0482211 TSOP56 jackson
Text: D Small Outline Package Guide 1999 3/25/99 4:28 PM cvrpg.doc Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel’s Terms and Conditions
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TSOP-48 pcb LAYOUT
Abstract: str 6654 pin details of str f 6654 pin details of str W 6654 amd socket 940 pinout str W 6654 land pattern tsop 66 56-Lead TSOP Package 28F002BC 28F010
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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land pattern for TSOP 2-44
Abstract: Wells programming adapter TSOP 48 intel 44-lead psop land pattern for TSOP 56 pin F9232 E28F016SA70 tsop tray matrix outline wells 648-0482211 memory card thickness 29f200 tsop adapter
Text: D Small Outline Package Guide 1996 296514-006 8/19/97 5:26 PM FRONT.DOC Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions
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hy57v168010b
Abstract: ddr sdram 128Mbit 8Mx16 54-PIN
Text: SDRAM ORDERING INFORMATION 4Mbit SDRAM Cttöanfeattws 256Kx16 Bank 2 1K Bank 2 2 2 Ref. 4K 4K 4K PWtNO» HY57V16401ÛBTC HY57V168010BTC HY57V161610BTC Bänk 2 2 2 Ref. PW Ho. 4K HY57V16401ÛCTC 4K HY57V168010CTC 4K HY57V161610CTC ii/ k - Pm N o. M ax.im x
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256Kx16
HY57V41610TC
400mil
16Mbit
1Mx16
HY57V16401
HY57V168010BTC
HY57V161610BTC
44pin)
hy57v168010b
ddr sdram 128Mbit 8Mx16
54-PIN
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Untitled
Abstract: No abstract text available
Text: Æ 7 S G S -T H O M S O N ^ 7 # * RÆQiMtliLti^TrWiDigi M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS > 120ns ACCESS TIME FLASH and EEPROM blocks > WRITE, PROGRAM and ERASE STATUS BITS
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M39432
120ns
40fiA
M39432
7T2T237
DCH3732
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C137E
Abstract: IA10 M29W040 M39432 si2730
Text: rZ J S G S -T H O M S O N M39432 SINGLE CHIP 4 Megabit FLASH an 256K PARALLEL EEPROM MEMORY PRELIMINARY DATA > 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS • 120ns ACCESS TIME FLASH and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS
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M39432
120ns
M39432
TSOP40
DCH3732
C137E
IA10
M29W040
si2730
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l g washing machine circuit diagram
Abstract: No abstract text available
Text: I SHARP SPEC No. ISSUE: E L 0 8 1 0 8 9 Feb. 16 1996 To ; S P E C I F I C A T I O N S Product Type 4M b i t M A S K R O M LH5V4BXX Model No. LH53V4B00T 8-This specifications contains 12 pages including the cover and appendix. If you have any objections, please contact us before issuing purchasing order.
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LH53V4B00T)
TSOP40-P-1020
LH53V4B00T
CV644
l g washing machine circuit diagram
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Untitled
Abstract: No abstract text available
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
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Untitled
Abstract: No abstract text available
Text: _ M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
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Untitled
Abstract: No abstract text available
Text: M39432 Single Chip 4 Mbit Flash and 256 Kbit Parallel EEPROM Memory PRELIM IN ARY DATA • 3.3V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPARATIONS ■ 120ns ACCESS TIME Flash and EEPROM blocks ■ WRITE, PROGRAM and ERASE STATUS BITS ■ CONCURRENT MODE (Read Flash while
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M39432
120ns
M39432
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phase controller L120
Abstract: MOCA specs 1N914 28F008SA LH28F004SCT-L85 LHF04C01 f004s 70c04
Text: I SHARP LHF04C01 1 CONTENTS PAGE PAGE 1.0 INTRODUCTION. 3 5.0 DESIGN CONSIDERATIONS.23 1.1 New Features. 3 5.1 Three-Line Output Control.23
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LHF04C01
LH28F004SCT-L85
TSOP40-P-1020
AA1105
LHF04CQ1
phase controller L120
MOCA specs
1N914
28F008SA
LH28F004SCT-L85
LHF04C01
f004s
70c04
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Untitled
Abstract: No abstract text available
Text: SHARP REFERENCE SPEC No. E L 0 9 7 1 3 3 I S S U E : Jul 17 1997 To ; S P E C I F I C A T I O N S Product Type Flash File M e m o r y _ LH28F004 SCT-L8 5 Mo de l No. CL HF 0 4 C 0 1 ^T his sp ecification s contains 46 pages including the cover and appendix.
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LH28F004
LHF04C01
LH28F004SCT-L85
TSOP40-P-1020
AA1105
CV644
LH28Fxxx
LH28F004SC
512Kx8)
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Untitled
Abstract: No abstract text available
Text: SHARP REFERENCE SPEC No. ISSUE: E L 0 9 7 1 3 7 Jul 17 1997 S P E C I F I CAT IONS Product Type 4M F l a s h F i l e M e m o r y _ LH2 8 F 0 0 4 S C H T - L 8 5 Mo d e l No. L H F 0 4 C 0 3 ¿&This sp e c ific a tio n s contains 46 pages including the cover and appendix.
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LHF04C03
TSOP40--
AA1105
CV644
LH28F004SCHTL85
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