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    Kyocera AVX Components LMXS04C4M4R7CTAS

    POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M4R7CTAS)
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    Avnet Americas LMXS04C4M4R7CTAS Reel 18 Weeks 5,000
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    Kyocera AVX Components LMXS04C4M4R3CTAS

    POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M4R3CTAS)
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    Avnet Americas LMXS04C4M4R3CTAS Reel 18 Weeks 5,000
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    Kyocera AVX Components LMXS04C4M471CTAS

    POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M471CTAS)
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    Avnet Americas LMXS04C4M471CTAS Reel 18 Weeks 5,000
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    Kyocera AVX Components LMXS04C4M470CTAS

    POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M470CTAS)
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    Avnet Americas LMXS04C4M470CTAS Reel 18 Weeks 5,000
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    Alliance Semiconductor Corporation AS4C4M4F160JC

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    Bristol Electronics AS4C4M4F160JC 3,000
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    4C4M4 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4C4M4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    4C4M4EOQ-50JC Alliance Semiconductor 4M x 4 CM0S QuadCAS DRAM (EDO) family, 50ns RAS access time Original PDF
    4C4M4EOQ-50TC Alliance Semiconductor 4M x 4 CM0S QuadCAS DRAM (EDO) family, 50ns RAS access time Original PDF
    4C4M4EOQ-60JC Alliance Semiconductor 4M x 4 CM0S QuadCAS DRAM (EDO) family, 60ns RAS access time Original PDF
    4C4M4EOQ-60TC Alliance Semiconductor 4M x 4 CM0S QuadCAS DRAM (EDO) family, 60ns RAS access time Original PDF
    4C4M4FOQ-50JC Alliance Semiconductor 5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode) Original PDF
    4C4M4FOQ-50TC Alliance Semiconductor 5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode) Original PDF
    4C4M4FOQ-60JC Alliance Semiconductor 5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode) Original PDF
    4C4M4FOQ-60TC Alliance Semiconductor 5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode) Original PDF

    4C4M4 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4C4M4EOQ-50JC

    Abstract: 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC
    Text: March 2001 4C4M4EOQ 4C4M4E1Q 4M ✕ 4 CMOS QuadCAS DRAM EDO family Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption


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    28-pin 24/26-pin 4C4M4EOQ-50JC 4C4M4EOQ-60JC 4C4M4EOQ-50TC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC 4C4M4EOQ-50JC 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC PDF

    4C4M4FOQ-50JC

    Abstract: 4C4M4FOQ-50TC 4C4M4FOQ-60JC TSOP300
    Text: March 2001 4C4M4FOQ 4C4M4F1Q 5V 4M X 4 CMOS QuadCAS DRAM fastpage mode Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption


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    28-pin 4C4M4FOQ-50JC 4C4M4FOQ-50TC 4C4M4FOQ-60JC TSOP300 PDF

    on 707

    Abstract: 4C4M4FOQ-50JC 4C4M4FOQ-50TC
    Text: $GYDQFH#LQIRUPDWLRQ $67&707 24 $67&707)44 89#70#✕#7#&026#4XDG #7#&026#4XDG&$6 &$6#'5$0#+IDVWSDJH#PRGH, 89#70# #7#&026#4XDG &$6 #'5$0#+IDVWSDJH#PRGH, )HDWXUHV • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time


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    28-pin 4C4M4FOQ-50TC 4C4M4FOQ-60TC 24/26-pin AS4C4M4F1Q-50JC AS4C4M4F1Q-60JC AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC on 707 4C4M4FOQ-50JC 4C4M4FOQ-50TC PDF

    4c4m4

    Abstract: No abstract text available
    Text: $GYDQFH#LQIRUPDWLRQ $67&707 24 $67&707(44 70#✕#7#&026#4XDG 70# #7#&026#4XDG&$6 #7#&026#4XDG&$6#'5$0#+('2,#IDPLO\ &$6#'5$0#+('2,#IDPLO\ HDWXUHV • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time


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    28-pin 24/26-pin 4C4M4EOQ-50JC 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC 4c4m4 PDF

    NEC D2732

    Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
    Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256


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    71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 PDF

    Untitled

    Abstract: No abstract text available
    Text: V, M in n n N I m t 4C4M4Ai / b i 4 MEG X 4 DRAM 4 MEG x 4 DRAM DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V *10% • Low power, 3mW standby; 200mW active, typical Al


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    200mW 048-cycle 096-cycle Q1113Ã PDF

    j13000

    Abstract: dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF
    Text: H igh P erform an ce 4M x4 CMOS DRAM « II Features • Organization: 4,194,304 words x 4 bits • High speed A S4C 4M 4E0 A S4LC4M 4E0 4M X 4 CMOS EDO DRAM Advance information JEDEC standard package - 400 mil, 24/26-pin SOJ 5V power supply 4C4M4E0 3V power supply (4LC4M4E0)


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    24/26-pin AS4LC4M4E0-60TC 1-30004-A. 1M16E0 0004-A. DD01b03 j13000 dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O


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    24/26-pin 24/26-p E0-60JC AS4LC4M4E0-50TC AS4LC4M4E0-60TC U-30004-A. PDF

    4lc4m4e0

    Abstract: No abstract text available
    Text: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed


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    /30/3S 24/26-pin 24-pin 4lc4m4e0 PDF

    MT4C4M4

    Abstract: No abstract text available
    Text: PRELIMINARY 4C4M4B1 4 MEG X 4 DRAM MICRON I ItChNOLOCY INC. DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN ASSIGNMENT Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply


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    250mW 048-cycle 24/26-Pin 001551b MT4C4M4 PDF

    4C4M4B1

    Abstract: No abstract text available
    Text: PRELIM INARY 4C4M4B1 4 MEG X 4 DRAM l^ iiC R n r s j DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN A SSIG N M E N T Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5.0V ±10% pow er supply


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    250mW 048-cycle 24/26-Pin 4C4M4B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ


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    1-30004-A. 1M16E0 l-30004-A. PDF