ETI27
Abstract: im360 1D500A-030 et-125
Text: T r a n s isto rs COLLMER SEMICO NDU CT OR ED INC MfiE D Bi 22307*12 DD01bD4 G7S • C O L B u ild in g blo ck tra n sisto rs • S u ita b le fo r m o to r control a p p lic a tio n s • H igh vo ltage , large current c ap acity Device type V e so • V c e o : 300 - 1000V, Ic: 100 - 500A
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DD01bD4
1D200A-020
1D500A-030
ETM36-030
ETN31-055
ET1257
ET125
ETI27
im360
et-125
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BAL0105-100
Abstract: J3315 Scans-00115697
Text: 0182998 ACRIAN GENERAL INC ”t? DE [ □ l A S ' H Ò DD01BE1 1 |~5 A\m& 0105-100 DESCRIPTION 100 WATTS - 28 VOLTS 100-500 MHz The 0105-100 is an internally matched, balanced transistor designed for broadband applications. It may be operated Class A, AB or C and is an improved
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BAL0105-100.
J05-100â
560mW
BAL0105-100
J3315
Scans-00115697
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AIC010F
Abstract: AIC-011F
Text: PTEC INC 5ÜE » □21441fc> DD01BS1 1 AIC-616X ad ap tec Single-Chip PC/AT Mass Storage Controllers Host AT Interface • Up to 8 Mbytes/second data transfer • Supports PIO and DMA modes • On-chip bus drivers • Emulates PC/AT disk control for full IBM BIOS compatibility
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21441fc>
DD01BS1
AIC-616X
16-byte
32-bit
48bit
16-bit
31-word
AIC-6160L:
84-pin
AIC010F
AIC-011F
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Untitled
Abstract: No abstract text available
Text: DAICO INDUSTRIES INC hlE D • 2bn4T2D DD01b7H 3=12 ■ DAI FEATURES ■ 5 - 2 0 0 MHz ■ 1 Watt CW Thru ■ 0.5 dB Insertion Loss ■ +43 dBm 3rd Order I.P. ■ +33 dBm 0.1 dB Compression ■ Non-Reflective ■ 14 Pin DIP ■ See DS0432 for 200 - 900 MHz Version
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DD01b7H
DS0432
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Untitled
Abstract: No abstract text available
Text: Data Sheet &8V to 200V GPP TRANSIENT VOLTAGE SUPPRESSORS Semiconductor M echanical Dim ensions JEDEC DO-15 i 4 t .1041 .140 t . 1.00 Min. -230 .300 _L “ n " i t Features • 600 WATT PEAK POWER PROTECTION B TYPICAL l„ < Ip A ABOVE 10V GLASS MSSVATfD CMP CONSTRUCTION
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DO-15
51X25X30cm
21X21X5
47X22X27cm
KBPC10
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Untitled
Abstract: No abstract text available
Text: HIROSE ELECTRIC U S A INC 3QE D • Creative Links to MM*Î3537 ■OGOltS'i T m World Electronics FFC/FPC FH3 SERIES • .049” 1.25mm "FFC/FPC” CONNECTORS IScope Designed to fill the needs o f higher circuit density the F H 3 series on .0 4 9 " (1.25mm) centers is nearly half the size of
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FH3-10S-1
FH3-12S-1
FH3-13S-1
FH3-14S-1
FH3-16S-1
FH3-17S-1
FH3-20S-1
FH3-22S-1
FH3-24S-1
FH3-30S-1
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Untitled
Abstract: No abstract text available
Text: JT2F D evice 6 Mbit/s JT2 Framer TXC-03702B DATA SHEET Product Preview DESCRIPTION 11 = The JT2 Framer JT2F is a CMOS VLSI device that provides the functions needed to frame a wideband payload to ITU G.704 and the NTT-specified 6312 kbit/s frame format for ATM operation. The JT2F interfaces to
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TXC-03702B
TXC-21047B,
RS-232
TXC-05150,
1DD4152
TXC-03702B-MB
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100 watt inverter ckt
Abstract: SC3502Q SC3502Q-1 SC3502-1
Text: \ - i J — n |- ^ / DEVICE SPECIFICATION 2 \ -| J M J i 20-OUTPUT CLOCK DRIVER / INVERTER SC3502I GENERAL DESCRIPTION FEATURES • Twenty 20 clock outputs: - Five (5) outputs at primary frequency, up to 80 MHz - Five (5) inverted outputs at the primary
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20-OUTPUT
SC3502
SC3502
20-clock
SC3502Q-1
SC3502Q
100 watt inverter ckt
SC3502Q
SC3502Q-1
SC3502-1
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DD01B
Abstract: No abstract text available
Text: IBM0118160 IBM0118160M IBM0118160B IBM0118160P 1 M x 16 10/10 DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
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IBM0118160
IBM0118160M
IBM0118160B
IBM0118160P
200jiA
350ns
DD01b
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Untitled
Abstract: No abstract text available
Text: HIROSE ELECTRIC U S A INC 3QE D • Creative Links to MM*Î3537 ■OGOltS'i T m World Electronics FFC/FPC FH3 SERIES • .049” 1.25mm "FFC/FPC” CONNECTORS IScope Designed to fill the needs o f higher circuit density the FH3 series on .049" (1.25mm) centers is nearly half the size of
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25DSA
FH3-10S-1
FH3-12S-1
FH3-13S-1
FH3-14S-1
FH3-16S-1
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IDT3081
Abstract: ANDC13 G2553 AHA3411 R3000 Am29k d2059 D2259
Text: Advanced Hardware A rchite ctures, Inc. 1.0 INTRODUCTION _ AHA3411 is a lossless compression coprocessor IC under development for hardcopy systems on many standard platforms, including PCI Bus. The device is targeted for high throughput and high resolution hardcopy systems.
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AHA3411
AHA3410.
PS3411-1197
IDT3081
ANDC13
G2553
R3000
Am29k
d2059
D2259
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2MX4
Abstract: No abstract text available
Text: H ig h p e r fo r m a n c e 4M x4 CMOS DRAM H AS4LC4M 4S0 A 4 M x 4 C M O S sy n c h ro n o u s D RA M Advance inform ation Features • • • • • • • • • Burst re a d /w rite , single w rite • Can assert ran d o m colum n address in every cycle
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44-pm
44-pin
1-30008-A.
DD01b31
2MX4
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CL9100 MPEG
Abstract: cl9100 c-cube CL9100
Text: CL9100 Multimode Video Decoder User’s Manual % C-Cube Microsystems 1 7 b t4Etic5 G 0 0 1 b 3 2 fib'i m C-Cube Microsystems reserves the right to change any products described herein at any time and without notice. C-Cube Microsystems assumes no responsibility or liability arising from the use of the prod
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CL9100
CL9100,
17bH2bc
00017b?
CL9100 MPEG
cl9100 c-cube
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Untitled
Abstract: No abstract text available
Text: H igh perform ance 128KX8 5 V CMOS Flash EEPROM H A S29F010 II 1 2 8 K X 8 CMOS Flash EEPROM Features • O r g a n iz a t io n : 12 8 K x 8 b its • JEDEC s ta n d a r d w r i t e c y c le c o m m a n d s - p ro te c ts da ta fro m accidental changes • S e c to r E rase a r c h ite c tu r e
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128KX8
S29F010
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Untitled
Abstract: No abstract text available
Text: ROHM CORP/ EXEL NELECS bhE D • DDPlbSb b45 MICROELECTRONICS XL93LC46U-3 Excellence In f Preliminary 1,024-Bit Serial 3V to 5V Electrically Erasable PROM with 2V Read Capability FEATU R ES ■ S tate-of-th e-A rt A rch itecture — N o nvo latile data storage
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XL93LC46U-3
024-Bit
7B2TD14
7fl2T014
0001bb4
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Untitled
Abstract: No abstract text available
Text: IBM0118165 IBM0118165M IBM0118165B IBM0118165P 1Mx 16 10/10 EDO DRAM Features • 1,048,576 word by 16 bit organization • Single 3.3V ± 0.3V or 5.0V ± 0.5V power supply • Standard Power SP and Low Power (LP) • 1024 Refresh Cycles - 16 ms Refresh Rate (SP version)
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IBM0118165
IBM0118165M
IBM0118165B
IBM0118165P
350ns
350ns)
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Untitled
Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced
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HY5116410
1AD03-10-APR93
4b7500fl
HY5116410JC
HY5116410UC
HY5116410TC
HY5116410LTC
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Untitled
Abstract: No abstract text available
Text: ADMA-T1 Device 1.544 Mbit/s to VT1.5/TU-11 Async Mapper-Desync TXC-04001B DATA SHEET Preliminary = • Add/drop two 1.544 Mbit/s signals from an STS-1, an STS-3/AU-3, or an STM-1 VC-4 • independent add/drop mode between ports • Selectable AMI or B8ZS positive/negative rail or
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5/TU-11
TXC-04001B
TXC-04001B-MB
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cs 344C
Abstract: 1L33 M30009 344c amplifier tcl 2272 16MX4 4MX16 AS4LC4M16S0 1L3000 IH380
Text: A S4LC 16M 4S0 A S4LC 8M 8S0 A S4LC 4M 16S0 H ig h p e r f o r m a n c e 16 M x 4 / 8 M x 8 / 4 M x 16 CM OS DRAM A 6 4 M egabit CMOS synchronous DRAM Advance information Features • O rg a n iz a tio n - 4 ,1 9 4 ,3 0 4 w ords X 4 bits X 4 banks 16M X4
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AS4LC16M4S0
AS4LC4M16S0
16MX4)
AS4LC16M4S0
54-pin
AS4LC4M16S0-8TC
AS4LC4M16S0
i-30009-A.
0Dlb54
cs 344C
1L33
M30009
344c amplifier
tcl 2272
16MX4
4MX16
1L3000
IH380
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Untitled
Abstract: No abstract text available
Text: PMC-Steira, Inc. errata I • V I V — _ P M 5 3 4 7 S / U N I - P L U S ISSUE2 SAUFNLGBIbEÎWORKINIERFKE-PlJUB PM5347 SATURN USER NETWORK INTERFACE PLUS ERRATA Issue 2: March 1996 PMC-Sierra, Inc. 8501 Commerce Court, Burnaby, BC Canada V5A 4N3 604 668 7300
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PM5347
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ericsson rectifier 100 amp
Abstract: ma 8910 PBL3786 k 3786 circuit diagram of speech to text tone ringer HT 3786 d
Text: IbE D ERICSSON COMPONENTS INC • 3373fc>fi0 ODOlbbb 5 ■ ERICSSON ^ February 1989 _ _ T - - 16-0 7 - / 5 PBL 3786 Voice-switched Speakerphone and Toneringer Circuit Description Key features The PBL 3786 contains all the necessary circuitry, amplifiers, detectors, comparators
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3373fc,
S-164
ericsson rectifier 100 amp
ma 8910
PBL3786
k 3786
circuit diagram of speech to text
tone ringer
HT 3786 d
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Untitled
Abstract: No abstract text available
Text: ACT 3 3.3 Volt Field Programmable Gate Arrays F eatu res • 3.3V Functionality specifications fully compliant with JEDEC Replaces up to 250 TTL Packages Replaces up to 100 20-pin PAL Packages • Highly Predictable Performance with 100% Automatic Placement and Routing
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20-pin
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CdS PHOTO resistor
Abstract: No abstract text available
Text: bBsag^i DaaibST m ö ü « m o v i 54E ]> MOSEL MSS0283 Speech Synthesizer Voice ROM (10SEL-VITELIC ~ P 7 -7- r 3 > FEATURES DESCRIPTION • Single power can operate at 2.4V through 6V. The M SS0283 is a single-chip speech synthesizing C M O S VLSI that can synthesize voice and other
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10SEL-VITELIC
SS0283.
MSS0283
SS0283
PID027B
DD01bb3
CdS PHOTO resistor
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INTECH
Abstract: intech 16 bit analog to digital converter Intech Microcircuits ADC1201 ADC1201KMP DOD133M 3db7
Text: INTECH INC/ MICROCIRCUITS 65 De | m 6E507S DDD133M fl | p ^ T^5l^lO-í^ in te c h C ADVANCED ANALOG Preliminary Specifications ADC1201 HIGH S P E E D 12-BIT A/D C O N V E R T E R WITH S A M P LE/ H O LD DESCRIPTION T he A D C 12 01 is a fu lly se lf-co n ta in e d 12-bit A /D
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M6E507S
DOD133M
ADC1201
12-bit
ADC1201
46-Picted
INTECH
intech 16 bit analog to digital converter
Intech Microcircuits
ADC1201KMP
3db7
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