200n60
Abstract: robot control
Text: Preliminary Data Sheet HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 175 A 2.1 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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200N60B
160ns
227TM
728B1
200n60
robot control
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Untitled
Abstract: No abstract text available
Text: HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60B
160ns
227TM
IXGN200N60B
405B2
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Untitled
Abstract: No abstract text available
Text: IXGE50N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE50N60Z
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200n60
Abstract: No abstract text available
Text: Advance Technical Information HiPerFASTTM IGBT IXGE 200N60B VCES IC25 VCE sat = 600 V = 175 A = 2.1 V E ISOPLUS 227TM (IXGE) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous
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200N60B
227TM
25crease
728B1
200n60
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Untitled
Abstract: No abstract text available
Text: IXGE75N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE75N80Z
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Untitled
Abstract: No abstract text available
Text: IXGE75N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE75N100Z
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Untitled
Abstract: No abstract text available
Text: IXGE50N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE50N90Z
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Untitled
Abstract: No abstract text available
Text: IXGE50N80Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)800 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE50N80Z
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Untitled
Abstract: No abstract text available
Text: IXGE75N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE75N50Z
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200N60B
Abstract: 200n60 IXGN200N60B SOT227B package SOT227B 123B16
Text: HiPerFASTTM IGBT IXGE 200N60B E Symbol Test Conditions VCES IC25 VCE sat tfi = = = = 600 V 160 A 2.3 V 160ns ISOPLUS 227TM (IXGE) Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient
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200N60B
160ns
227TM
IXGN200N60B
405B2
200N60B
200n60
SOT227B package
SOT227B
123B16
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Untitled
Abstract: No abstract text available
Text: IXGE50N50Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)500 V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE50N50Z
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Untitled
Abstract: No abstract text available
Text: IXGE50N100Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)1.0k V(BR)GES (V) I(C) Max. (A)50 Absolute Max. Power Diss. (W)200 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE50N100Z
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Untitled
Abstract: No abstract text available
Text: IXGE75N60Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)600 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE75N60Z
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Untitled
Abstract: No abstract text available
Text: IXGE75N90Z Transistors Independent IGBT Power Module Isolated Case Y/N Yes Circuits Per Package1 V(BR)CES (V)900 V(BR)GES (V) I(C) Max. (A)75 Absolute Max. Power Diss. (W)250 Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case
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IXGE75N90Z
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f g megamos
Abstract: megamos megamos 48 TO220H ID 48 Megamos megamos 13 IXGE
Text: I X Y S CORP 16E 5 IS 4b fit55t Q000563 H H§ I T t-m MODULESand PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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ofMIL-S-19500
MIL-M-38510.
f g megamos
megamos
megamos 48
TO220H
ID 48 Megamos
megamos 13
IXGE
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f g megamos
Abstract: megamos 13 megamos IXGE75N100Z ID 48 Megamos
Text: I X Y S CORP 16E 5 IS 4 b fit55t Q000563 H H§ ITt-m MODULES and PACKAGES IXYS has made a major commitment to serve the military and aerospace industry with advanced power tech nology. Besides developing a superior fourth generation rugged process called HDMOS, IXYS has also invested
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fit55t
Q000563
f g megamos
megamos 13
megamos
IXGE75N100Z
ID 48 Megamos
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led 7 doan
Abstract: sla 6102 LT 8521 lg 7607 DB82 JL - 012C Z8000 8C08 5252 F 0906 LT 210D
Text: Advanced Micro Computers A subsidiary of Advanced Micro D evices A m 96/4016 Evaluation Board Monitor Listing REVISION RECORD REVISION A DESCRIPTION In itial Is s u e 1 2 /3 /7 9 B S e c o n d P rin tin g ( 1 /7 /8 0 ) Publication No. 0 0 6801 46 Address com m ents concerning
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Am96/4016
Z8000
000STK:
led 7 doan
sla 6102
LT 8521
lg 7607
DB82
JL - 012C
8C08
5252 F 0906
LT 210D
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Untitled
Abstract: No abstract text available
Text: Bulletin 127503 08/97 International MT.KB SERIES IÖR Rectifier THREE PHASE CONTROLLED BRIDGE Features • Package fully com patible with the industry standard INT-A-pak pow er m odules series ■ High therm al conductivity package, electrically insulated case
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53-93-113M
I27503
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b342d
Abstract: information applikation applikation heft mikroelektronik Heft 12 information applikation mikroelektronik Transistoren DDR VEB mikroelektronik "information applikation" mikroelektronik Heft 10 ITT transistoren
Text: m n t k if ^ s j e le lK t e n a r iH - c g|B Information Applikation in n f B = a n iis ö lH W b n a n lK Information Applikation Heft: 28 Transistorarrays Iweb Halbleiterwerk frankfurt/oder | betrieb im veto kombinet mikroelektronik KAMMER DER TECHNIK Bezirksvorstand Frankfurt/O.
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