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    Untitled

    Abstract: No abstract text available
    Text: • « H Y U N D A I SEMICONDUCTOR H Y M 5 8 1 O O O B S e r ie s 1M X 8 - b it CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22//F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A 22//F HYM581000BM/BLM 1BB05-00-MAY93 4b750fifi 4b75Dflfl

    HY514460

    Abstract: No abstract text available
    Text: •HYUNDAI HY514460 Series SEMICONDUCTOR 256 Kx164 R C MO S DRAM with 2 C A S & W P B PRELIMINARY DESCRIPTION The HY514460 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access


    OCR Scan     		PDF HY514460 Kx164 16-bit 400mil 40pin 40/44pin 1AC12-00-APR93 DDQ1553

    Untitled

    Abstract: No abstract text available
    Text: HY5116400A Series •{HYUNDAI 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400A is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5116400A utilizes Hyundai’s CMOS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400A HY5116400A 1AD23-10-MAY95 HY5116400AJ HY5116400ASLJ HY511 400AT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HYM536400B Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536400B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5116400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0 .2 2ftF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400B 36-bit HY5116400 HYM536400BM/BLM HYM536400BMG/BLMG 1CE05-00-MAY93

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI H Y 5 1 1 7 4 0 0 S e r ie s 4M X 4-bit CMOS DRAM DESCRIPTION The HY5117400 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY5117400 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5117400 1AD05-20-MAR94 4b750fifi HY5117400JC HY5117400UC HY5117400TC HY5117400LTC

    Untitled

    Abstract: No abstract text available
    Text: HY62V8400 Series 5 1 2 K x g bjt C M Q S SR A M »HYUNDAI PRELIMINARY DESCRIPTION The HY62V8400 is a high-speed, low power and 524,288 x 8-bits CMOS static RAM fabricated using Hyundai's high performance twin tub CMOS process technology. The HY62V8400 has a data retention mode that guarantees


    OCR Scan     		PDF HY62V8400C HY62V8400 55/70/85/100ns -100/120/150/200ns 45defl 10E03-11 MAY94 4b750fifi

    Untitled

    Abstract: No abstract text available
    Text: HY51V16400B Series -HYUNDAI 4M X 4-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16400B is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit. The HY51V16400B utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V16400B HY51V16400B 1A047-00-MAY95 HY51V16400BJ HY51V16400BSL HY51V16400BT HY51V16400BSLT

    721 KXC

    Abstract: moc 3048
    Text: «HYUNDAI H Y 6 2 V 8 1 0 0 A 128K S e r ie s CMOS SRAM X 8 -b it PRELIMINARY DESCRIPTION The HY62V8100A is a high-speed, low power and 131.072 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V8100A has a data retention mode that


    OCR Scan     		PDF HY62V8100A 128Kx 55/70/85/100ns -100/120/150/200ns t00-H 792e0 1DD04-11-MAY95 721 KXC moc 3048

    Untitled

    Abstract: No abstract text available
    Text: ♦H Y U N D A I HYM536400 Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM536400 is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of thirty six HY514100 in 20/26 pin SOJ on a 72 pin giass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM536400 36-bit HY514100 HYM536400M HYM536400MG 198mW 396mW 1CE02-10-MAY93

    Untitled

    Abstract: No abstract text available
    Text: “HYUNDAI HY51V4810B Series 5 1 2 K x 8 -b tt CM O S DRAM w it h W r it e - P e r - B it PRELIMINARY DESCRIPTION The HY51V4810B is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY51V4810B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V4810B HY51V4810B 1AC20-00-MAY94 HY51V4810BJC HY51V4810BSUC HY51V4810BTC

    Untitled

    Abstract: No abstract text available
    Text: HY5216256 Series -HYUNDAI 256Kx 16-bit Video RAM with 2CAS Introduction Overview The 4megabit Video RAM is an application specific memory device designed for graphics applications. It comprises a 256k x16 DRAM memory array interfaced to a 256 x16 Serial Access Memory SAM , or register.


    OCR Scan     		PDF HY5216256 256Kx 16-bit 16bits 4b750Ã 1VC01-00-MAY95 525mil 64pin 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: HYM532200A M-Series •HYUNDAI 2M X 32-bit CMOS DRAM MODULE DESCRIPTION The HYM532200A Is a 2M x 32-bit Fast page mode CMOS DRAM module consisting of sixteen HY514400A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22fi? decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM532200A 32-bit HY514400A HYM532200AM/ALM HYM532200AMG/ALMG 1CD03-01-FEBM DGD34SD

    Untitled

    Abstract: No abstract text available
    Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words


    OCR Scan     		PDF HY57V16161 476x16 4b75Gflfi 1SD03-00-MAY95 400mil 4b750flÃ

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI HYM5V72A414A K-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V72A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY51V17404A in 24/26 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.22nFdecoupiing


    OCR Scan     		PDF HYM5V72A414A 72-bit HY51V17404A 22nFdecoupiing HYM5V72A414AKG/ATKG/ASLKG/ASLTKG 010TO nn47H 4b75Gfifl

    HY51V17404A

    Abstract: HY51V17404AJ60 00045n
    Text: HY51V17404A Series • H Y U N D A I 4 M X 4-b it CMOS DRAM W ith Extended Data O ut DESCRIPTION The HY51V17404Aisthe new generation andfast dynamic RAM organized 4,194,304 x 4-bit. The HY51V17404A utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY51V17404A HY51V17404AÃ 0004S1Ã 1AD40-00-MAY95 HY51V17404AJ HY51V17404ASLJ HY51V17404AT HY51V17404AJ60 00045n

    Untitled

    Abstract: No abstract text available
    Text: HYM581000B M-Series • H Y U N D A I 1M x8-btt CMOS DRAM MODULE DESCRIPTION The HYM581000B is a 1M x 8-bit Fast page mode CMOS DRAM module consisting of two HY514400A in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM581000B HY514400A HYM581000BM/BLM 11-OmW 1BB05-01-FEB94 4b75D6Ã GDD32bÃ

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI SEMICONDUCTOR HYM594000 Series 4M X 9-bit CMOS DRAM MODULE DESCRIPTION The HYM594000 is a 4M x 9-bit Fast page mode CMOS DRAM module consisting of nine HY514100 in 20/26 pin SOJ on a 30 pin glass-epoxy printed circuit board. 0.22/iF decoupling capacitor is mounted for each DRAM.


    OCR Scan     		PDF HYM594000 HY514100 22/iF HYM594000M 1BC02-20-MAY93 251MAX. 1BC02-20-M

    HYM536120

    Abstract: No abstract text available
    Text: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling


    OCR Scan     		PDF HYM536120 36-bit HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG DQ0-DQ35) DDGSS34

    Untitled

    Abstract: No abstract text available
    Text: HYUNDAI HY51V16404B Series 4M X 4-bit CMOS DRAM with Extended Data Out DESCRIPTION The HY51V16404B is the new generation and fa st dynam ic RAM organized4,194,304 x 4-bit. The HY51V16404B utilizes Hyundai’s CM OS silicon gate process technology as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY51V16404B HY51V16404B 4b75Gflfl 1AD51-10-MAY95 HY51V16404BJ HY51V16404BSLJ HY51V16404BT

    512Kx1+DRAM

    Abstract: No abstract text available
    Text: HY514100B Series •HYUNDAI 4M X 1 -b lt CMOS DRAM PRELIMINARY DESCRIPTION The HY5141OOB is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. th e HY514100B utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100B HY5141OOB 1AC09-00-MAYÃ 4b750fifi 000241b HY514100BJ HY514100BU 512Kx1+DRAM

    Untitled

    Abstract: No abstract text available
    Text: HY51V17805B Series •«HYUNDAI 2M X 8-bit CMOS DRAM with Burst EDO PRELIMINARY DESCRIPTION The HY51V17805B is the new generation and fast dynamic RAM organized 2,097,152x8-bit. The HY51V17805B utilized Hyundai’s CMOS silicon gate process technology as well as advenced circuit techniques to prove wide


    OCR Scan     		PDF HY51V17805B 152x8-bit. HY51V17805B 1AD62-00-MAY95 HY51V17805BJC HY51V17805BTC HY51V17805BRC

    Untitled

    Abstract: No abstract text available
    Text: HY5116400 Series • H Y U N D A I 4M X 4-bit CMOS DRAM DESCRIPTION The HY5116400 is the new generation and fast dynamic RAM organized 4,194,304x 4-bit. The HY5116400 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY5116400 1AD02-10-MAV94 4b750fifi HY5116400JC HY5116400UC

    Untitled

    Abstract: No abstract text available
    Text: -HYUNDAI HY514100 Series 4M X 1-bit CMOS DRAM DESCRIPTION The HY514100 is the new generation and fast dynamic RAM organized 4,194,304 x 1-bit. The HY514100 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF HY514100 1AC01-20-MAYM 4b750fifi 1AC01 -20-MAY94

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI SEMICONDUCTOR H Y 5116410 S e rie s 4M X 4-blt CMOS DRAM with Write-Per-Bit DESCRIPTION The HY5116410 is the new generation and fast dynamic RAM organized 4,194,304 x 4-bit with function of Write-Per-Bit. The HY5116410 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced


    OCR Scan     		PDF HY5116410 1AD03-10-APR93 4b7500fl HY5116410JC HY5116410UC HY5116410TC HY5116410LTC