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    SN74LS47NSR Texas Instruments BCD-to-Seven-Segment Decoders/Drivers 16-SO 0 to 70 Visit Texas Instruments Buy
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    Cal-Chip Electronics WB0805T47NSG

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    JRH Electronics 447NS055-16

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    JRH Electronics 447NS135NF2209-6

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    47NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3D4 IXGP30N60C3D4 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IC110 IXGA30N60C3D4 IXGP30N60C3D4 40-100kHz O-263 O-220AB 8-06B

    G30N60

    Abstract: IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710
    Text: GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions G Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz IC110 O-263 O-220 G30N60 IXGH30N60C3 30N60C3 30n60c3 TO-247 IXGA30N60C3 g30n60c3 siemens igbt 20A 30n60 ixgp30n60c3 RG 710

    IXGA30N60C3

    Abstract: IXGH30N60C3 IXGP30N60C3 30N60C3 G30N60C3
    Text: IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF 40-100kHz IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 IC110 O-263 IC110 O-220AB O-247 30N60C3 IXGH30N60C3 G30N60C3

    IXGP30N60C3D4

    Abstract: IXGA30N60C3D4 g30N60
    Text: IXGA30N60C3D4 IXGP30N60C3D4 GenX3TM 600V IGBTs w/ Diode VCES = IC110 = VCE sat ≤ tfi(typ) = High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF 40-100kHz IXGA30N60C3D4 IXGP30N60C3D4 IC110 O-263 IC110 O-220AB 8-06B IXGP30N60C3D4 g30N60

    ixgh30n60c3d1

    Abstract: 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBTs w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


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    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110 O-247) O-268 O-247 600v 30A fast recovery diode g30n60c3 Tvj-150 30N60C3

    IXGA30N60C3C1

    Abstract: IXGH30N60C3C1 IXGP30N60C3C1 30N60C3
    Text: IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings


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    PDF IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 IF110 O-220AB O-247 IXGH30N60C3C1 30N60C3

    g30n60

    Abstract: No abstract text available
    Text: Preliminary Technical Information GenX3TM 600V IGBT IXGA30N60C3 IXGP30N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original
    PDF IXGA30N60C3 IXGP30N60C3 40-100kHz IC110 O-263 O-220 30N60C3 g30n60

    IXGH30N60C3D1

    Abstract: 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1
    Text: IXGH30N60C3D1 IXGT30N60C3D1 GenX3TM 600V IGBT with Diode VCES IC110 VCE sat tfi(typ) High speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1MΩ


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    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 ID110 IXGH30N60C3D1 30N60C3 G30N60 g30n60c3 30C17 IXGT30N60C3D1

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 = = ≤ = 600V 30A 3.0V 47ns TO-263 AA (IXGA) High-Speed PT IGBTs for 40 - 100kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings


    Original
    PDF IC110 IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 O-263 100kHz O-220AB IF110

    30N60C3

    Abstract: g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4
    Text: Preliminary Technical Information GenX3TM 600V IGBT With Diode IXGA30N60C3D4 IXGP30N60C3D4 VCES = IC110 = VCE sat ≤ tfi(typ) = High Speed PT IGBTs for 40-100kHz switching 600V 30A 3.0V 47ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C


    Original
    PDF IXGA30N60C3D4 IXGP30N60C3D4 IC110 40-100kHz O-263 O-220 8-06B 30N60C3 g30n60c3 G30N60 igbt g30n60c3 IXGA30N60C3D4 IXGP30N60C3D4

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs VCES = IC110 = VCE sat ≤ tfi(typ) = IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 High-Speed PT IGBTs for 40-100kHz Switching 600V 30A 3.0V 47ns TO-263 AA (IXGA) G Symbol Test Conditions Maximum Ratings E VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IC110 IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 40-100kHz O-263 O-220AB 30N60C3 5-02-11-A

    Untitled

    Abstract: No abstract text available
    Text: GenX3TM 600V IGBTs w/ Diode IXGH30N60C3D1 IXGT30N60C3D1 VCES IC110 VCE sat tfi(typ) High-Speed PT IGBTs for 40-100 kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-268 (IXGT) Symbol Test Conditions Maximum Ratings G VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ


    Original
    PDF IXGH30N60C3D1 IXGT30N60C3D1 IC110 O-268 IF110

    G30N60

    Abstract: IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3
    Text: Preliminary Technical Information IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode VCES IC110 VCE sat tfi(typ) High Speed PT IGBTs for 40 - 100kHz Switching = = ≤ = 600V 30A 3.0V 47ns TO-263 (IXGA) G E Symbol Test Conditions


    Original
    PDF IXGA30N60C3C1 IXGP30N60C3C1 IXGH30N60C3C1 IC110 100kHz O-263 O-220 IF110 G30N60 IXGH30N60C3C1 20A 300V Schottky Diode IF110 IXGP30N60C3C1 IGBT 600V 40A diode 30N60C 40ATD IXGA30N60C3C1 IXGP30N60C3

    Untitled

    Abstract: No abstract text available
    Text: PD -95686A HFA30PB120PbF Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions • Lead-Free Benefits • Reduced RFI and EMI


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    PDF -95686A HFA30PB120PbF 120nC O-247AC HFA16PB120 08-Mar-07

    Untitled

    Abstract: No abstract text available
    Text: LM2742 www.ti.com SNVS266C – MARCH 2004 – REVISED MARCH 2013 LM2742 N-Channel FET Synchronous Buck Regulator Controller for Low Output Voltages Check for Samples: LM2742 FEATURES DESCRIPTION • • • The LM2742 is a high-speed, synchronous, switching


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    PDF LM2742 SNVS266C LM2742 TSSOP-14

    LTC1867

    Abstract: LTC1863LCGN LTC1867L LTC6912 829D
    Text: LTC1863L/LTC1867L Micropower, 3V, 12-/16-Bit, 8-Channel 175ksps ADCs DESCRIPTION FEATURES n n n n n n n n n n n n The LTC 1863L/LTC1867L are pin compatible, 8-channel 12-/16-bit A/D converters with serial I/O and an internal reference. Sample Rate: 175ksps


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    PDF LTC1863L/LTC1867L 12-/16-Bit, 175ksps 1863L/LTC1867L 12-/16-bit 175ksps 16-Bit LTC1863/LTC1867 175ksps, 50ksps LTC1867 LTC1863LCGN LTC1867L LTC6912 829D

    AN-1197

    Abstract: IRF7832 LM27241 LM27241MTC LM27241MTCX MTC20 TSSOP-20 tssop-18
    Text: LM27241 Synchronous Buck Regulator Controller for Mobile Systems General Description Features The LM27241 is an adjustable 200kHz-500kHz single channel voltage-mode controlled high-speed synchronous buck regulator controller. It is ideally suited for battery powered


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    PDF LM27241 LM27241 200kHz-500kHz CSP-9-111S2) CSP-9-111S2. AN-1197 IRF7832 LM27241MTC LM27241MTCX MTC20 TSSOP-20 tssop-18

    HFA16PB120

    Abstract: HFA30PB120 IRFP250
    Text: PD -2604A HFA30PB120 Ultrafast, Soft Recovery Diode HEXFRED TM Features • Ultrafast Recovery • Ultrasoft Recovery • Very Low IRRM • Very Low Qrr • Guaranteed Avalanche • Specified at Operating Conditions Benefits • Reduced RFI and EMI • Reduced Power Loss in Diode and


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    PDF -2604A HFA30PB120 120nC O-247AC HFA16PB120 12-Mar-07 HFA30PB120 IRFP250

    CSA803

    Abstract: 7s 803
    Text: Application Notes 6. Jitter in Clock Sources Continuous advances in high-speed communication and measurement systems require higher levels of performance from system clocks and references. Performance acceptable in the past may not be sufficient to support high-speed synchronous equipment.


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    PDF 1-88-VECTRON-1 CSA803 7s 803

    2B0365

    Abstract: 74ls244 latch ic Z8127 z80 multibus Am286
    Text: Am8163/Am8167 A m 816 3 /A m 816 7 Dynamic Memory Timing, Refresh and EDC Controllers DISTINCTIVE CHARACTERISTICS • Complete CPU to dynamic RAM control interface • R A S /M S E L/C A S Sequencer to eliminate delay lines • Complete EDC/data path controls for W ord/Byte read


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    PDF Am8163/Am8167 Z8000, MC68000) Am8163 Am8167 Z8000* MOS67 1553A 2B0365 74ls244 latch ic Z8127 z80 multibus Am286

    AA 170 circit diagram

    Abstract: 256KX16 MSM5416256 ucas zip
    Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 ¿ Lo w voltage version or V-voreion _ 262,144 Words x 16 Bits GRAPHICS BURST A C C ESS MEMORY


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    PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 b72M2M0 b7S424D AA 170 circit diagram MSM5416256 ucas zip

    Untitled

    Abstract: No abstract text available
    Text: Am8163/Am8167 Am8163/Am8167 Dynamic Memory Timing, Refresh and EDC Controllers DISTINCTIVE CHARACTERISTICS • • • • Complete CPU to dynamic RAM control Interface RAS/MSEL/óÀS Sequencer to eliminate delay lines Complete EDC/data path controls for Word/Byte read


    OCR Scan
    PDF Am8163/Am8167 Z8000, MC68000) Am8163 Am8167 1553A

    256kx16 ucas zip

    Abstract: No abstract text available
    Text: Technical Information OKI Semiconductor MSM5416256/MSM54V16256 {Standard-version _ Lowvoltago vflrsionor V-voremn)_ 262,144 Words x 16 Bits GRAPHICS BURST ACCESS MEMORY GENERAL DESCRIPTION The MSM5416256 is a high speed 256KX16 configuration burst access memory for high performance


    OCR Scan
    PDF MSM5416256/MSM54V16256 MSM5416256 256KX16 MSM54 DQ8-15 245MG 256kx16 ucas zip

    Untitled

    Abstract: No abstract text available
    Text: VP213 H f M IT E L Dual 90MHz 6-Bit Analog to Digital Converter "'IMP1'1 Prelim inary Inform ation s e m ic o n d u c t o r DS4067 - 1.4 May 1996 The VP213 is a dual 90MHz 6-bit Analog to Digital Converter designed for use in consumer satellite receivers


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    PDF VP213 90MHz DS4067 VP213