MR2A16A
Abstract: MR2A16ATS35C
Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The
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MR2A16A
16-Bit
MR2A16A
304-bit
MR2A16ATS35C
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tsop 48 PIN type2
Abstract: 48BGA MR0A16AMA35
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
EST354
tsop 48 PIN type2
48BGA
MR0A16AMA35
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DQU12
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, and Extended Temperatures
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MR0A16A
44-pinâ
48-ballâ
1-877-347-MRAMâ
EST00354
MR0A16A
080512a
DQU12
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Untitled
Abstract: No abstract text available
Text: MR0A16A FEATURES 64K x 16 MRAM Memory • + 3.3 Volt power supply • Fast 35ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Commercial, Industrial, Extended Temperatures • Data always non-volatile for >20-years at temperature
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MR0A16A
20-years
MR0A16A
576-bit
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BGA OUTLINE DRAWING
Abstract: mr4a16bmys351
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP package
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MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
BGA OUTLINE DRAWING
mr4a16bmys351
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Untitled
Abstract: No abstract text available
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
AEC-Q100
MR2A16A
304-bit
EST00193
Rev10
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Untitled
Abstract: No abstract text available
Text: MR0A16A FEATURES • • • • • • • • • 64K x 16 MRAM Memory 3.3 Volt power supply Fast 35ns read/write cycle SRAM compatible timing Unlimited read & write endurance Commercial, Industrial, and Extended Temperatures
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MR0A16A
AEC-Q100
44-pin
48-ball
1-877-347-MRAM
EST00354
MR0A16A
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MR2A16A
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 3, 6/2006 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The
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MR2A16A
16-Bit
304-bit
MR2A16A
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Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MR1A16A Rev. 3, 11/2007 128K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR1A16A is a 2,097,152-bit magnetoresistive random access memory MRAM device organized as 131,072 words of 16 bits. The
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MR1A16A
16-Bit
MR1A16A
152-bit
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MR2A16A
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output
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MR2A16A/D
16-Bit
MR2A16A
304-bit
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MR1A16AVYS35
Abstract: No abstract text available
Text: Freescale Semiconductor Data Sheet Document Number: MR1A16A Rev. 1, 8/2007 128K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR1A16A is a 2,097,152-bit magnetoresistive random access memory MRAM device organized as 131,072 words of 16 bits. The
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MR1A16A
16-Bit
MR1A16A
152-bit
MR1A16AVYS35
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EV2A16
Abstract: No abstract text available
Text: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)
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EV2A16A
16-bit
EV2A16A
304-bit
0918Eâ
EV2A16
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MR2A16A
Abstract: No abstract text available
Text: Freescale Semiconductor Advance Information MR2A16A/D Rev. 0.1, 7/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output
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MR2A16A/D
16-Bit
MR2A16A
304-bit
MR2A16A/D
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EV2A16A
Abstract: EV2A16 0918AX 0918B
Text: EV2A16A 256K x 16-bit 3.3V Asynchronous Magnetoresistive RAM Datasheet Features • Single 3.3V Power Supply • Industrial Temperature Range –40°C to 110°C and • • • • • • • Military Temperature Range (–55°C to 125°C) Symmetrical High-speed Read and Write with Fast Access Time (35 ns)
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EV2A16A
16-bit
EV2A16A
304-bit
0918B
EV2A16
0918AX
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MR2A16ATS
Abstract: MR2A16A
Text: Freescale Semiconductor Data Sheet Document Number: MR2A16A Rev. 6, 11/2007 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresistive random access memory MRAM device organized as 262,144 words of 16 bits. The
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MR2A16A
16-Bit
MR2A16A
304-bit
MR2A16ATS
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aec-q100 package
Abstract: MR4A16BCYS35R
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
1-877-347-MRAM
EST00352
aec-q100 package
MR4A16BCYS35R
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MR2A16AMYS35
Abstract: MR2A16A MR2A16AMA35
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20 years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
AEC-Q100
MR2A16A
304-bit
MR2A16AMYS35
MR2A16AMA35
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Untitled
Abstract: No abstract text available
Text: MR4A16B 1M x 16 MRAM FEATURES • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20 years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
AEC-Q100
MR4A16B
216-bit
EST00352
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RN10B
Abstract: 8pg31 RN10A R529 MCF52259 DP83640 multilink RN14B HDR2X8 C520 silicon
Text: 5 4 3 2 1 Table of Contents D 2 3 4 5 6 7 8 9 10 11 12 13 Revisions Rev Power Supply Processor Ethernet Phy MRAM CPLD/LCD/CF Card Serial Ports USB Port Clocks LED and Switch BDM and Breakout Connector Decoupling USB TO BDM BLOCK A A1 Description Date Prototype Release
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MC34717
Page12)
48MHz
SPF-24470
SCH-24470
RN10B
8pg31
RN10A
R529
MCF52259
DP83640
multilink
RN14B
HDR2X8
C520 silicon
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MR2A16A
Abstract: No abstract text available
Text: Advance Information MR2A16A/D 2/2004 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR2A16A is a 4,194,304-bit magnetoresitive random access memory MRAM device organized as 262,144 words of 16 bits. The MR2A16A is equipped with chip enable (E), write enable (W), and output enable (G) pins,
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MR2A16A/D
16-Bit
MR2A16A
304-bit
MR2A16A/D
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MR2A16AC
Abstract: tsop 48 PIN type2 MR2A16AMY MRAM MR2A16ACYS35R 44TSOP mr2a16amys35 MR2A16ATS35 MR2A16A 012MAX
Text: MR2A16A FEATURES 256K x 16 MRAM Memory • Fast 35 ns Read/Write Cycle • SRAM Compatible Timing, Uses Existing SRAM Controllers Without Redesign • Unlimited Read & Write Endurance • Data Non-volatile for >20-years at Temperature • One Memory Replaces Flash, SRAM, EEPROM and BBSRAM in
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MR2A16A
20-years
AEC-Q100
MR2A16A
304-bit
MR2A16horized
MR2A16AC
tsop 48 PIN type2
MR2A16AMY
MRAM
MR2A16ACYS35R
44TSOP
mr2a16amys35
MR2A16ATS35
012MAX
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MR4A16B
Abstract: MR4A16BCMA35 MR4A16BCYS35 54TSOP2 MR4A16BCYS35R 54-TSOP2 MR4A16BMA35R MR4A16BC aecq100
Text: MR4A16B FEATURES 1M x 16 MRAM • +3.3 Volt power supply • Fast 35 ns read/write cycle • SRAM compatible timing • Unlimited read & write endurance • Data always non-volatile for >20-years at temperature • RoHS-compliant small footprint BGA and TSOP2 package
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MR4A16B
20-years
AEC-Q100
MR4A16B
216-bit
MR4A16B,
EST352
MR4A16BCMA35
MR4A16BCYS35
54TSOP2
MR4A16BCYS35R
54-TSOP2
MR4A16BMA35R
MR4A16BC
aecq100
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MR0A16A
Abstract: MR0A16AYS35
Text: Freescale Semiconductor Data Sheet: Advance Information Document Number: MR0A16A Rev. 0, 6/2007 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM Introduction The MR0A16A is a 1,048,576-bit magnetoresistive random access memory MRAM device organized as 65,536 words of 16 bits. The
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MR0A16A
16-Bit
MR0A16A
576-bit
MR0A16AYS35
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